NL290035A - - Google Patents
Info
- Publication number
- NL290035A NL290035A NL290035DA NL290035A NL 290035 A NL290035 A NL 290035A NL 290035D A NL290035D A NL 290035DA NL 290035 A NL290035 A NL 290035A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR890695A FR1325695A (fr) | 1962-03-12 | 1962-03-12 | Transistors à effet de champ et leurs procédés de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL290035A true NL290035A (de) |
Family
ID=8774498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL290035D NL290035A (de) | 1962-03-12 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3275908A (de) |
| DE (1) | DE1464485A1 (de) |
| FR (1) | FR1325695A (de) |
| GB (1) | GB1041385A (de) |
| NL (1) | NL290035A (de) |
| OA (1) | OA00421A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6501947A (de) * | 1965-02-17 | 1966-08-18 | ||
| US3539839A (en) * | 1966-01-31 | 1970-11-10 | Nippon Electric Co | Semiconductor memory device |
| GB1205211A (en) * | 1966-07-21 | 1970-09-16 | Nat Res Dev | Transferred electron oscillators |
| US3453504A (en) * | 1966-08-11 | 1969-07-01 | Siliconix Inc | Unipolar transistor |
| US3619740A (en) * | 1968-10-29 | 1971-11-09 | Nippon Electric Co | Integrated circuit having complementary field effect transistors |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE527524A (de) * | 1949-05-30 | |||
| FR1037293A (fr) * | 1951-05-19 | 1953-09-15 | Licentia Gmbh | Redresseur sec à contrôle électrique et son procédé de fabrication |
| US2778956A (en) * | 1952-10-31 | 1957-01-22 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
| US3081421A (en) * | 1954-08-17 | 1963-03-12 | Gen Motors Corp | Unipolar transistor |
| US3010033A (en) * | 1958-01-02 | 1961-11-21 | Clevite Corp | Field effect transistor |
| FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ | |
| US3152294A (en) * | 1959-01-27 | 1964-10-06 | Siemens Ag | Unipolar diffusion transistor |
| US2994811A (en) * | 1959-05-04 | 1961-08-01 | Bell Telephone Labor Inc | Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction |
| US3089794A (en) * | 1959-06-30 | 1963-05-14 | Ibm | Fabrication of pn junctions by deposition followed by diffusion |
| FR1245720A (fr) * | 1959-09-30 | 1960-11-10 | Nouvelles structures pour transistor à effet de champ | |
| US3126505A (en) * | 1959-11-18 | 1964-03-24 | Field effect transistor having grain boundary therein | |
| US3114867A (en) * | 1960-09-21 | 1963-12-17 | Rca Corp | Unipolar transistors and assemblies therefor |
| BE624959A (de) * | 1961-11-20 | |||
| BE632998A (de) * | 1962-05-31 |
-
0
- NL NL290035D patent/NL290035A/xx unknown
-
1962
- 1962-03-12 FR FR890695A patent/FR1325695A/fr not_active Expired
-
1963
- 1963-03-07 GB GB9171/63A patent/GB1041385A/en not_active Expired
- 1963-03-08 US US263916A patent/US3275908A/en not_active Expired - Lifetime
- 1963-03-09 DE DE19631464485 patent/DE1464485A1/de active Pending
-
1964
- 1964-10-28 OA OA50500A patent/OA00421A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR1325695A (fr) | 1963-05-03 |
| OA00421A (fr) | 1966-05-15 |
| DE1464485A1 (de) | 1969-03-20 |
| GB1041385A (en) | 1966-09-07 |
| US3275908A (en) | 1966-09-27 |