OA00421A - Transitors à effet de champ et leurs procédés de fabrication. - Google Patents

Transitors à effet de champ et leurs procédés de fabrication.

Info

Publication number
OA00421A
OA00421A OA50500A OA50500A OA00421A OA 00421 A OA00421 A OA 00421A OA 50500 A OA50500 A OA 50500A OA 50500 A OA50500 A OA 50500A OA 00421 A OA00421 A OA 00421A
Authority
OA
OAPI
Prior art keywords
field
manufacturing processes
effect transitors
transitors
effect
Prior art date
Application number
OA50500A
Other languages
English (en)
Original Assignee
Csf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Csf filed Critical Csf
Publication of OA00421A publication Critical patent/OA00421A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
OA50500A 1962-03-12 1964-10-28 Transitors à effet de champ et leurs procédés de fabrication. OA00421A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR890695A FR1325695A (fr) 1962-03-12 1962-03-12 Transistors à effet de champ et leurs procédés de fabrication

Publications (1)

Publication Number Publication Date
OA00421A true OA00421A (fr) 1966-05-15

Family

ID=8774498

Family Applications (1)

Application Number Title Priority Date Filing Date
OA50500A OA00421A (fr) 1962-03-12 1964-10-28 Transitors à effet de champ et leurs procédés de fabrication.

Country Status (6)

Country Link
US (1) US3275908A (fr)
DE (1) DE1464485A1 (fr)
FR (1) FR1325695A (fr)
GB (1) GB1041385A (fr)
NL (1) NL290035A (fr)
OA (1) OA00421A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6501947A (fr) * 1965-02-17 1966-08-18
US3539839A (en) * 1966-01-31 1970-11-10 Nippon Electric Co Semiconductor memory device
GB1205211A (en) * 1966-07-21 1970-09-16 Nat Res Dev Transferred electron oscillators
US3453504A (en) * 1966-08-11 1969-07-01 Siliconix Inc Unipolar transistor
US3619740A (en) * 1968-10-29 1971-11-09 Nippon Electric Co Integrated circuit having complementary field effect transistors

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE527524A (fr) * 1949-05-30
FR1037293A (fr) * 1951-05-19 1953-09-15 Licentia Gmbh Redresseur sec à contrôle électrique et son procédé de fabrication
US2778956A (en) * 1952-10-31 1957-01-22 Bell Telephone Labor Inc Semiconductor signal translating devices
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US3081421A (en) * 1954-08-17 1963-03-12 Gen Motors Corp Unipolar transistor
US3010033A (en) * 1958-01-02 1961-11-21 Clevite Corp Field effect transistor
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
US3152294A (en) * 1959-01-27 1964-10-06 Siemens Ag Unipolar diffusion transistor
US2994811A (en) * 1959-05-04 1961-08-01 Bell Telephone Labor Inc Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
FR1245720A (fr) * 1959-09-30 1960-11-10 Nouvelles structures pour transistor à effet de champ
US3126505A (en) * 1959-11-18 1964-03-24 Field effect transistor having grain boundary therein
US3114867A (en) * 1960-09-21 1963-12-17 Rca Corp Unipolar transistors and assemblies therefor
BE624959A (fr) * 1961-11-20
NL293447A (fr) * 1962-05-31

Also Published As

Publication number Publication date
NL290035A (fr)
DE1464485A1 (de) 1969-03-20
GB1041385A (en) 1966-09-07
FR1325695A (fr) 1963-05-03
US3275908A (en) 1966-09-27

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