NL285545A - - Google Patents

Info

Publication number
NL285545A
NL285545A NL285545DA NL285545A NL 285545 A NL285545 A NL 285545A NL 285545D A NL285545D A NL 285545DA NL 285545 A NL285545 A NL 285545A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL285545A publication Critical patent/NL285545A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/26—Time-delay networks
    • H03H11/265—Time-delay networks with adjustable delay
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/30—Time-delay networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/30—Time-delay networks
    • H03H9/38—Time-delay networks with adjustable delay time

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
NL285545D 1961-11-17 NL285545A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US153088A US3200354A (en) 1961-11-17 1961-11-17 Ultrasonic wave transmission device utilizing semiconductor piezoelectric material to provide selectable velocity of transmission

Publications (1)

Publication Number Publication Date
NL285545A true NL285545A (zh)

Family

ID=22545723

Family Applications (2)

Application Number Title Priority Date Filing Date
NL285545D NL285545A (zh) 1961-11-17
NL62285545A NL143391C (nl) 1961-11-17 1962-11-15 Ultrasoon-golfoverdrachtsstelsel voor het met een variabele vertraging overdragen van ultrasone akoestische golven.

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL62285545A NL143391C (nl) 1961-11-17 1962-11-15 Ultrasoon-golfoverdrachtsstelsel voor het met een variabele vertraging overdragen van ultrasone akoestische golven.

Country Status (6)

Country Link
US (1) US3200354A (zh)
BE (1) BE624904A (zh)
DE (1) DE1273719B (zh)
FR (1) FR1340428A (zh)
GB (1) GB1021237A (zh)
NL (2) NL143391C (zh)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3292114A (en) * 1966-12-13 Ultrasonic delay line for microwave and higher frequencies
US3295064A (en) * 1962-06-20 1966-12-27 Bell Telephone Labor Inc Ultrasonic pulse modifier
US3251009A (en) * 1963-05-28 1966-05-10 Ibm Semiconductor ultrasonic signal-delay apparatus utilizing integral p-n junctions as electromechanical transducers
GB1125978A (en) * 1965-12-20 1968-09-05 Nippon Telegraph & Telephone Microwave semiconductor device
US3401347A (en) * 1966-04-25 1968-09-10 Nippon Telegraph & Telephone Microwave semiconductor amplifier
US3436666A (en) * 1967-06-05 1969-04-01 Texas Instruments Inc Solid state traveling wave amplifier
US3513356A (en) * 1967-06-27 1970-05-19 Westinghouse Electric Corp Electromechanical tuning apparatus particularly for microelectronic components
US3422371A (en) * 1967-07-24 1969-01-14 Sanders Associates Inc Thin film piezoelectric oscillator
US3614678A (en) * 1967-08-11 1971-10-19 Gen Electric Electromechanical filters with integral piezoresistive output and methods of making same
US3533022A (en) * 1967-08-11 1970-10-06 Gen Electric Magnetically driven electromechanical filter with cantilevered resonator and variable q
US3517349A (en) * 1967-08-11 1970-06-23 Gen Electric Miniature electromechanical filter with magnetic drive
US3435250A (en) * 1967-08-18 1969-03-25 Us Army Solid state microwave acoustic delay line and frequency converter
GB1242085A (en) * 1967-08-18 1971-08-11 Matsushita Electric Ind Co Ltd A recording device
US3634787A (en) * 1968-01-23 1972-01-11 Westinghouse Electric Corp Electromechanical tuning apparatus particularly for microelectronic components
US3611062A (en) * 1968-04-17 1971-10-05 Ibm Passive elements for solid-state integrated circuits
GB1328343A (en) * 1969-09-17 1973-08-30 Mullard Ltd Electro mechanical filters
US3626334A (en) * 1969-12-30 1971-12-07 Ibm Electrically variable acoustic delay line
US3737811A (en) * 1970-02-13 1973-06-05 Mini Of Aviat Supply In Her Br Acoustic surface wave device wherein acoustic surface waves may be propagated with an electric field dependent velocity
DE2019780C3 (de) * 1970-04-23 1974-07-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum nachträglichen Abgleichen der Laufzeit von elektroakustischen Verzögerungsleitungen auf piezoelektrischen Keramiksubstraten
US3696312A (en) * 1970-06-30 1972-10-03 Ibm Cyclotron resonance devices controllable by electric fields
US3679985A (en) * 1970-06-30 1972-07-25 Ibm Acoustic wave parametric amplifier/converter
US3675140A (en) * 1970-06-30 1972-07-04 Ibm Acoustic wave amplifier having a coupled semiconductor layer
US3714438A (en) * 1970-07-20 1973-01-30 Univ California Method and apparatus for propagating traveling wave energy through resonant matter
US3792321A (en) * 1971-08-26 1974-02-12 F Seifert Piezoelectric semiconductor devices in which sound energy increases the breakdown voltage and power of capabilities
US3827002A (en) * 1973-05-18 1974-07-30 Us Navy Tunable electroacoustic transducers
FR2239813B1 (zh) * 1973-08-03 1978-04-21 Commissariat Energie Atomique
US4141025A (en) * 1977-03-24 1979-02-20 Gosudarstvenny Nauchno-Issle-Dovatelsky I Proektny Institut Redkometallicheskoi Promyshlennosti "GIREDMET" Semiconductor structure sensitive to pressure
US4169236A (en) * 1977-12-30 1979-09-25 The United States Of America As Represented By The Secretary Of The Army Rotation of characteristic vectors with piezoelectric coupling
US5263004A (en) * 1990-04-11 1993-11-16 Hewlett-Packard Company Acoustic image acquisition using an acoustic receiving array with variable time delay
US9331211B2 (en) * 2009-08-28 2016-05-03 X-Fab Semiconductor Foundries Ag PN junctions and methods
GB0915501D0 (en) * 2009-09-04 2009-10-07 Univ Warwick Organic photosensitive optoelectronic devices
US9602073B2 (en) * 2013-05-31 2017-03-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having piezoelectric layer with varying amounts of dopant
US9679765B2 (en) 2010-01-22 2017-06-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation
US9473106B2 (en) 2011-06-21 2016-10-18 Georgia Tech Research Corporation Thin-film bulk acoustic wave delay line
US8575819B1 (en) * 2011-07-18 2013-11-05 Integrated Device Technology, Inc. Microelectromechanical resonators with passive frequency tuning using built-in piezoelectric-based varactors
CN103529990B (zh) * 2011-10-19 2017-05-10 松下电器产业株式会社 压电元件及电子设备
US10340885B2 (en) 2014-05-08 2019-07-02 Avago Technologies International Sales Pte. Limited Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
US9547819B1 (en) 2015-11-23 2017-01-17 International Business Machines Corporation Phase-change material time-delay element for neuromorphic networks

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2553491A (en) * 1950-04-27 1951-05-15 Bell Telephone Labor Inc Acoustic transducer utilizing semiconductors
US2904704A (en) * 1954-06-17 1959-09-15 Gen Electric Semiconductor devices
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2866014A (en) * 1955-10-31 1958-12-23 Bell Telephone Labor Inc Piezoresistive acoustic transducer
US2898477A (en) * 1955-10-31 1959-08-04 Bell Telephone Labor Inc Piezoelectric field effect semiconductor device
US3093758A (en) * 1960-04-13 1963-06-11 Bell Telephone Labor Inc Piezoelectric devices utilizing cadmium sulfide

Also Published As

Publication number Publication date
NL143391C (nl) 1974-09-16
US3200354A (en) 1965-08-10
GB1021237A (en) 1966-03-02
BE624904A (zh)
DE1273719B (de) 1968-07-25
FR1340428A (fr) 1963-10-18
DE1273719C2 (zh) 1969-03-13

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