NL280641A - - Google Patents

Info

Publication number
NL280641A
NL280641A NL280641DA NL280641A NL 280641 A NL280641 A NL 280641A NL 280641D A NL280641D A NL 280641DA NL 280641 A NL280641 A NL 280641A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL280641A publication Critical patent/NL280641A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/054Flat sheets-substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Thyristors (AREA)
NL280641D 1961-07-07 NL280641A (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB24660/61A GB968105A (en) 1961-07-07 1961-07-07 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
NL280641A true NL280641A (ru)

Family

ID=10215225

Family Applications (1)

Application Number Title Priority Date Filing Date
NL280641D NL280641A (ru) 1961-07-07

Country Status (4)

Country Link
US (1) US3179860A (ru)
DE (1) DE1464622A1 (ru)
GB (1) GB968105A (ru)
NL (1) NL280641A (ru)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3575644A (en) * 1963-01-30 1971-04-20 Gen Electric Semiconductor device with double positive bevel
GB1052661A (ru) * 1963-01-30 1900-01-01
CH427042A (de) * 1963-09-25 1966-12-31 Licentia Gmbh Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps
US3262234A (en) * 1963-10-04 1966-07-26 Int Rectifier Corp Method of forming a semiconductor rim by sandblasting
US3320496A (en) * 1963-11-26 1967-05-16 Int Rectifier Corp High voltage semiconductor device
US3363151A (en) * 1964-07-09 1968-01-09 Transitron Electronic Corp Means for forming planar junctions and devices
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
US3413532A (en) * 1965-02-08 1968-11-26 Westinghouse Electric Corp Compression bonded semiconductor device
DE1514474C3 (de) * 1965-06-05 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
CH426020A (de) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
CH437538A (de) * 1965-12-22 1967-06-15 Bbc Brown Boveri & Cie Steuerbares Halbleiterelement
GB1145392A (en) * 1967-03-08 1969-03-12 Ass Elect Ind Improvements in semi-conductor rectifiers
FR2061563A1 (ru) * 1969-07-08 1971-06-25 Comp Generale Electricite
US3688163A (en) * 1970-08-04 1972-08-29 Gen Motors Corp Cold welded semiconductor package having integral cold welding oil
JPS5062385A (ru) * 1973-10-02 1975-05-28
DE2812700A1 (de) * 1978-03-23 1979-12-06 Bbc Brown Boveri & Cie Halbleiteranordnung mit zwei halbleiterelementen
US4170490A (en) * 1978-12-07 1979-10-09 General Electric Company Process for thermal gradient zone melting utilizing a beveled wafer edge
US4170496A (en) * 1978-12-07 1979-10-09 General Electric Company Beveled wafer for thermal gradient zone melting utilizing a beveled wafer edge
US4168992A (en) * 1978-12-07 1979-09-25 General Electric Company Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
NL111788C (ru) * 1956-06-18
NL113266C (ru) * 1957-01-18
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
NL134389C (ru) * 1958-07-02
NL243218A (ru) * 1958-12-24
US3091706A (en) * 1960-05-16 1963-05-28 Raytheon Co Semiconductor devices with improved carrier injection to allow increased frequency response

Also Published As

Publication number Publication date
US3179860A (en) 1965-04-20
DE1464622A1 (de) 1968-11-07
GB968105A (en) 1964-08-26

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