NL272752A - - Google Patents

Info

Publication number
NL272752A
NL272752A NL272752DA NL272752A NL 272752 A NL272752 A NL 272752A NL 272752D A NL272752D A NL 272752DA NL 272752 A NL272752 A NL 272752A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL272752A publication Critical patent/NL272752A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL272752D 1960-12-20 NL272752A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7726660A 1960-12-20 1960-12-20
US303464A US3231796A (en) 1960-12-20 1963-08-01 Pnpn semiconductor switch with predetermined forward breakover and reverse breakdownvoltages

Publications (1)

Publication Number Publication Date
NL272752A true NL272752A (ko)

Family

ID=26759089

Family Applications (1)

Application Number Title Priority Date Filing Date
NL272752D NL272752A (ko) 1960-12-20

Country Status (4)

Country Link
US (1) US3231796A (ko)
DE (1) DE1292255B (ko)
GB (1) GB996299A (ko)
NL (1) NL272752A (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1400724A (fr) * 1963-06-04 1965-05-28 Gen Electric Perfectionnements aux dispositifs semiconducteurs de commutation et à leur procédé de fabrication
DE1274245B (de) * 1965-06-15 1968-08-01 Siemens Ag Halbleiter-Gleichrichterdiode fuer Starkstrom
US3414779A (en) * 1965-12-08 1968-12-03 Northern Electric Co Integrated parametric amplifier consisting of a material with both semiconductive and piezoelectric properties
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
DE2323592C2 (de) * 1972-06-09 1981-09-17 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor
US3953254A (en) * 1972-11-07 1976-04-27 Thomson-Csf Method of producing temperature compensated reference diodes utilizing selective epitaxial growth
US3855611A (en) * 1973-04-11 1974-12-17 Rca Corp Thyristor devices
CH580339A5 (ko) * 1974-12-23 1976-09-30 Bbc Brown Boveri & Cie
JPS5230389A (en) * 1975-09-03 1977-03-08 Hitachi Ltd Thyristor
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
US5602404A (en) * 1995-01-18 1997-02-11 National Semiconductor Corporation Low voltage triggering silicon controlled rectifier structures for ESD protection
CN103222056B (zh) * 2010-09-27 2016-08-10 Abb技术有限公司 双极非穿通功率半导体装置
US9935206B2 (en) * 2013-05-10 2018-04-03 Ixys Corporation Packaged overvoltage protection circuit for triggering thyristors
US8878236B1 (en) * 2013-05-10 2014-11-04 Ixys Corporation High voltage breakover diode having comparable forward breakover and reverse breakdown voltages

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99632C (ko) * 1955-11-22
NL112062C (ko) * 1957-02-26
DE1079212B (de) * 1958-06-30 1960-04-07 Siemens Ag Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode
NL246349A (ko) * 1958-12-15
US2997604A (en) * 1959-01-14 1961-08-22 Shockley William Semiconductive device and method of operating same
US3152928A (en) * 1961-05-18 1964-10-13 Clevite Corp Semiconductor device and method

Also Published As

Publication number Publication date
US3231796A (en) 1966-01-25
DE1292255B (de) 1969-04-10
GB996299A (en) 1965-06-23

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