NL266156A - - Google Patents
Info
- Publication number
- NL266156A NL266156A NL266156DA NL266156A NL 266156 A NL266156 A NL 266156A NL 266156D A NL266156D A NL 266156DA NL 266156 A NL266156 A NL 266156A
- Authority
- NL
- Netherlands
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEW28070A DE1190918B (de) | 1960-06-24 | 1960-06-24 | Verfahren zur gezielten Dotierung von stabfoermigen Koerpern waehrend des Zonenschmelzens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL266156A true NL266156A (es) |
Family
ID=7598824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL266156D NL266156A (es) | 1960-06-24 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3141848A (es) |
| BE (1) | BE605268A (es) |
| GB (1) | GB995087A (es) |
| NL (1) | NL266156A (es) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3311510A (en) * | 1964-03-16 | 1967-03-28 | Mandelkorn Joseph | Method of making a silicon semiconductor device |
| US3477959A (en) * | 1967-04-24 | 1969-11-11 | Northern Electric Co | Method and apparatus for producing doped,monocrystalline semiconductor materials |
| BE788026A (fr) * | 1971-08-26 | 1973-02-26 | Siemens Ag | Procede et dispositif d'introduction dirigee de matieres de dopage dansdes cristaux semiconducteurs lors d'une fusion par zones sans creuset |
| DE2319700C3 (de) * | 1973-04-18 | 1980-11-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Beeinflussung des radialen Widerstandsverlaufs in einem Halbleitereinkristallstab beim tiegellosen Zonenschmelzen und Vorrichtungen zur Durchführung des Verfahrens |
| DE2327085C3 (de) * | 1973-05-28 | 1979-03-08 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen |
| US3858549A (en) * | 1973-08-15 | 1975-01-07 | Siemens Ag | Apparatus for controlled doping of semiconductor crystals |
| DE2623350A1 (de) * | 1976-05-25 | 1977-12-08 | Wacker Chemitronic | Verfahren zur bestimmung des wirksamen dotierstoffgehaltes von wasserstoff fuer die halbleiterherstellung |
| US4229298A (en) * | 1979-02-05 | 1980-10-21 | The Western States Machine Company | Method and apparatus for determining the thickness of a charge wall formed in a centrifugal basket |
| US4270972A (en) * | 1980-03-31 | 1981-06-02 | Rockwell International Corporation | Method for controlled doping semiconductor material with highly volatile dopant |
| US4556448A (en) * | 1983-10-19 | 1985-12-03 | International Business Machines Corporation | Method for controlled doping of silicon crystals by improved float zone technique |
| JP5194146B2 (ja) * | 2010-12-28 | 2013-05-08 | ジルトロニック アクチエンゲゼルシャフト | シリコン単結晶の製造方法、シリコン単結晶、およびウエハ |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE510303A (es) * | 1951-11-16 | |||
| US2964396A (en) * | 1954-05-24 | 1960-12-13 | Siemens Ag | Producing semiconductor substances of highest purity |
| DE1719025A1 (es) * | 1958-09-20 | 1900-01-01 |
-
0
- NL NL266156D patent/NL266156A/xx unknown
-
1961
- 1961-06-22 BE BE605268A patent/BE605268A/fr unknown
- 1961-06-26 GB GB23041/61A patent/GB995087A/en not_active Expired
- 1961-06-26 US US119547A patent/US3141848A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| BE605268A (fr) | 1961-12-22 |
| GB995087A (en) | 1965-06-16 |
| US3141848A (en) | 1964-07-21 |