NL264215A - - Google Patents

Info

Publication number
NL264215A
NL264215A NL264215DA NL264215A NL 264215 A NL264215 A NL 264215A NL 264215D A NL264215D A NL 264215DA NL 264215 A NL264215 A NL 264215A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL264215A publication Critical patent/NL264215A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/7606Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/7722Field effect transistors using static field induced regions, e.g. SIT, PBT
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/142Semiconductor-metal-semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
NL264215D 1960-05-02 NL264215A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26175A US3250966A (en) 1960-05-02 1960-05-02 Solid state devices utilizing a metal between two semiconductor materials

Publications (1)

Publication Number Publication Date
NL264215A true NL264215A (fr)

Family

ID=21830315

Family Applications (1)

Application Number Title Priority Date Filing Date
NL264215D NL264215A (fr) 1960-05-02

Country Status (6)

Country Link
US (1) US3250966A (fr)
JP (1) JPS399984B1 (fr)
BE (1) BE603293A (fr)
FR (1) FR1287954A (fr)
GB (1) GB984932A (fr)
NL (1) NL264215A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3292058A (en) * 1963-06-04 1966-12-13 Sperry Rand Corp Thin film controlled emission amplifier
US3290568A (en) * 1963-06-12 1966-12-06 Philco Corp Solid state, thin film triode with a graded energy band gap
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3386864A (en) * 1963-12-09 1968-06-04 Ibm Semiconductor-metal-semiconductor structure
US3337375A (en) * 1964-04-13 1967-08-22 Sprague Electric Co Semiconductor method and device
US3349297A (en) * 1964-06-23 1967-10-24 Bell Telephone Labor Inc Surface barrier semiconductor translating device
NL144775B (nl) * 1964-09-23 1975-01-15 Philips Nv Halfgeleiderinrichting met meer dan een halfgeleiderschakelelement in een lichaam.
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor
US3334248A (en) * 1965-02-02 1967-08-01 Texas Instruments Inc Space charge barrier hot electron cathode
US3825807A (en) * 1972-02-29 1974-07-23 Eastman Kodak Co High gain barrier layer solid state devices
NL7411044A (nl) * 1974-08-19 1976-02-23 Philips Nv Meetcel voor het bepalen van zuurstofconcen- traties in een gasmengsel.
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US4286275A (en) * 1980-02-04 1981-08-25 International Business Machines Corporation Semiconductor device
WO2003061073A2 (fr) * 2002-01-15 2003-07-24 Tribotek, Inc. Connecteur tisse a contacts multiples

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE436972A (fr) * 1938-11-15
US2524270A (en) * 1945-09-27 1950-10-03 Sylvania Electric Prod Selenium rectifier
BE509110A (fr) * 1951-05-05
US2836776A (en) * 1955-05-07 1958-05-27 Nippon Electric Co Capacitor
US3056073A (en) * 1960-02-15 1962-09-25 California Inst Res Found Solid-state electron devices
BE622805A (fr) * 1961-09-25

Also Published As

Publication number Publication date
US3250966A (en) 1966-05-10
JPS399984B1 (fr) 1964-06-09
BE603293A (fr)
GB984932A (en) 1965-03-03
FR1287954A (fr) 1962-03-16

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