NL264215A - - Google Patents
Info
- Publication number
- NL264215A NL264215A NL264215DA NL264215A NL 264215 A NL264215 A NL 264215A NL 264215D A NL264215D A NL 264215DA NL 264215 A NL264215 A NL 264215A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/142—Semiconductor-metal-semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26175A US3250966A (en) | 1960-05-02 | 1960-05-02 | Solid state devices utilizing a metal between two semiconductor materials |
Publications (1)
Publication Number | Publication Date |
---|---|
NL264215A true NL264215A (fr) |
Family
ID=21830315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL264215D NL264215A (fr) | 1960-05-02 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3250966A (fr) |
JP (1) | JPS399984B1 (fr) |
BE (1) | BE603293A (fr) |
FR (1) | FR1287954A (fr) |
GB (1) | GB984932A (fr) |
NL (1) | NL264215A (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3292058A (en) * | 1963-06-04 | 1966-12-13 | Sperry Rand Corp | Thin film controlled emission amplifier |
US3290568A (en) * | 1963-06-12 | 1966-12-06 | Philco Corp | Solid state, thin film triode with a graded energy band gap |
US3372069A (en) * | 1963-10-22 | 1968-03-05 | Texas Instruments Inc | Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor |
US3386864A (en) * | 1963-12-09 | 1968-06-04 | Ibm | Semiconductor-metal-semiconductor structure |
US3337375A (en) * | 1964-04-13 | 1967-08-22 | Sprague Electric Co | Semiconductor method and device |
US3349297A (en) * | 1964-06-23 | 1967-10-24 | Bell Telephone Labor Inc | Surface barrier semiconductor translating device |
NL144775B (nl) * | 1964-09-23 | 1975-01-15 | Philips Nv | Halfgeleiderinrichting met meer dan een halfgeleiderschakelelement in een lichaam. |
DE1289188B (de) * | 1964-12-15 | 1969-02-13 | Telefunken Patent | Metallbasistransistor |
US3334248A (en) * | 1965-02-02 | 1967-08-01 | Texas Instruments Inc | Space charge barrier hot electron cathode |
US3825807A (en) * | 1972-02-29 | 1974-07-23 | Eastman Kodak Co | High gain barrier layer solid state devices |
NL7411044A (nl) * | 1974-08-19 | 1976-02-23 | Philips Nv | Meetcel voor het bepalen van zuurstofconcen- traties in een gasmengsel. |
US4378629A (en) * | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
US4286275A (en) * | 1980-02-04 | 1981-08-25 | International Business Machines Corporation | Semiconductor device |
WO2003061073A2 (fr) * | 2002-01-15 | 2003-07-24 | Tribotek, Inc. | Connecteur tisse a contacts multiples |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE436972A (fr) * | 1938-11-15 | |||
US2524270A (en) * | 1945-09-27 | 1950-10-03 | Sylvania Electric Prod | Selenium rectifier |
BE509110A (fr) * | 1951-05-05 | |||
US2836776A (en) * | 1955-05-07 | 1958-05-27 | Nippon Electric Co | Capacitor |
US3056073A (en) * | 1960-02-15 | 1962-09-25 | California Inst Res Found | Solid-state electron devices |
BE622805A (fr) * | 1961-09-25 |
-
0
- BE BE603293D patent/BE603293A/xx unknown
- NL NL264215D patent/NL264215A/xx unknown
-
1960
- 1960-05-02 US US26175A patent/US3250966A/en not_active Expired - Lifetime
-
1961
- 1961-04-17 GB GB13854/61A patent/GB984932A/en not_active Expired
- 1961-04-29 FR FR860387A patent/FR1287954A/fr not_active Expired
- 1961-05-02 JP JP1602161A patent/JPS399984B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US3250966A (en) | 1966-05-10 |
JPS399984B1 (fr) | 1964-06-09 |
BE603293A (fr) | |
GB984932A (en) | 1965-03-03 |
FR1287954A (fr) | 1962-03-16 |