Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/58—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being tunnel diodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
  • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
  • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
  • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
  • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03C—MODULATION
  • H03C1/00—Amplitude modulation
  • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03C—MODULATION
  • H03C3/00—Angle modulation
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
  • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
  • H03D7/02—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes
  • H03D7/04—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes having a partially negative resistance characteristic, e.g. tunnel diode
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
  • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
  • H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
  • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
  • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
  • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Computer Hardware Design (AREA)
• Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
• Amplitude Modulation (AREA)
• Bipolar Integrated Circuits (AREA)
• Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
• Amplifiers (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=11658537

Family Applications (1)

Country Status (4)

Families Citing this family (3)

Family Cites Families (6)

• 1961
  • 1961-02-28 US US92396A patent/US3225317A/en not_active Expired - Lifetime
  • 1961-03-01 NL NL261810D patent/NL261810A/xx unknown
  • 1961-03-03 DE DES72824A patent/DE1234800B/de not_active Withdrawn
  • 1961-03-03 GB GB7903/61A patent/GB979794A/en not_active Expired
  • 1961-03-03 DE DE1961S0083243 patent/DE1284482B/de not_active Withdrawn

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