NL261810A - - Google Patents
Info
- Publication number
- NL261810A NL261810A NL261810DA NL261810A NL 261810 A NL261810 A NL 261810A NL 261810D A NL261810D A NL 261810DA NL 261810 A NL261810 A NL 261810A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/58—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being tunnel diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
- H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
- H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C3/00—Angle modulation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/02—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes
- H03D7/04—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes having a partially negative resistance characteristic, e.g. tunnel diode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
- H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Amplitude Modulation (AREA)
- Bipolar Integrated Circuits (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP716860 | 1960-03-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL261810A true NL261810A (de) | 1964-05-25 |
Family
ID=11658537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL261810D NL261810A (de) | 1960-03-04 | 1961-03-01 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3225317A (de) |
DE (2) | DE1234800B (de) |
GB (1) | GB979794A (de) |
NL (1) | NL261810A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE667762A (de) * | 1964-08-12 | 1966-02-02 | ||
US3875535A (en) * | 1973-05-24 | 1975-04-01 | Rca Corp | Enhanced efficiency diode circuit |
WO2021234780A1 (ja) | 2020-05-18 | 2021-11-25 | 富士通株式会社 | 発振回路および情報処理装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2655608A (en) * | 1952-07-22 | 1953-10-13 | Bell Telephone Labor Inc | Semiconductor circuit controlling device |
US2964637A (en) * | 1957-03-07 | 1960-12-13 | Rca Corp | Dynamic bistable or control circuit |
US2981891A (en) * | 1958-06-30 | 1961-04-25 | Ibm | Storage device |
US2997604A (en) * | 1959-01-14 | 1961-08-22 | Shockley William | Semiconductive device and method of operating same |
US3058009A (en) * | 1959-07-15 | 1962-10-09 | Shockley William | Trigger circuit switching from stable operation in the negative resistance region to unstable operation |
US3122649A (en) * | 1960-09-20 | 1964-02-25 | Rca Corp | Tunnel diode flip-flop with tunnel rectifier cross-coupling |
-
1961
- 1961-02-28 US US92396A patent/US3225317A/en not_active Expired - Lifetime
- 1961-03-01 NL NL261810D patent/NL261810A/xx unknown
- 1961-03-03 DE DES72824A patent/DE1234800B/de not_active Withdrawn
- 1961-03-03 GB GB7903/61A patent/GB979794A/en not_active Expired
- 1961-03-03 DE DE1961S0083243 patent/DE1284482B/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB979794A (en) | 1965-01-06 |
DE1234800B (de) | 1967-02-23 |
US3225317A (en) | 1965-12-21 |
DE1284482B (de) | 1968-12-05 |