NL260007A - - Google Patents

Info

Publication number
NL260007A
NL260007A NL260007DA NL260007A NL 260007 A NL260007 A NL 260007A NL 260007D A NL260007D A NL 260007DA NL 260007 A NL260007 A NL 260007A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL260007A publication Critical patent/NL260007A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
NL260007D 1960-01-14 NL260007A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE31360 1960-01-14

Publications (1)

Publication Number Publication Date
NL260007A true NL260007A (ja)

Family

ID=20256348

Family Applications (1)

Application Number Title Priority Date Filing Date
NL260007D NL260007A (ja) 1960-01-14

Country Status (4)

Country Link
US (1) US3140963A (ja)
DE (1) DE1213920B (ja)
GB (1) GB971261A (ja)
NL (1) NL260007A (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL300210A (ja) * 1962-11-14
US3351826A (en) * 1963-02-05 1967-11-07 Leroy N Hermann Five-region, three electrode, symmetrical semiconductor device, with resistive means connecting certain regions
FR1376515A (fr) * 1963-05-14 1964-10-31 Comp Generale Electricite Dispositif de blocage-déblocage à fonctionnement symétrique
NL296392A (ja) * 1963-08-07
FR85434E (fr) * 1963-12-12 1965-08-06 Comp Generale Electricite Perfectionnement aux dispositifs à semiconducteurs
US3337783A (en) * 1964-01-16 1967-08-22 Westinghouse Electric Corp Shorted emitter controlled rectifier with improved turn-off gain
US3328652A (en) * 1964-07-20 1967-06-27 Gen Electric Voltage comparator
US3398334A (en) * 1964-11-23 1968-08-20 Itt Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions
DE3239917A1 (de) * 1982-10-28 1984-05-03 Roman Efimovič Tomilino Moskovskaja oblast' Smoljanskij Bipolares halbleiterbauelement
US7327541B1 (en) 1998-06-19 2008-02-05 National Semiconductor Corporation Operation of dual-directional electrostatic discharge protection device
US6365924B1 (en) * 1998-06-19 2002-04-02 National Semiconductor Corporation Dual direction over-voltage and over-current IC protection device and its cell structure
JP4176564B2 (ja) * 2003-06-23 2008-11-05 株式会社東芝 ウェハ移載装置及びこれを用いた半導体装置の製造方法
FR2861228A1 (fr) * 2003-10-17 2005-04-22 St Microelectronics Sa Structure de commutateur scr a commande hf
CN106328518B (zh) * 2016-11-21 2019-05-10 富芯微电子有限公司 一种调节双向可控硅触发电流的工艺方法及双向可控硅

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE523990A (ja) * 1952-11-05
NL174268B (nl) * 1952-12-01 Ici Ltd Werkwijze voor het extraheren van metalen uit een oplossing in water, alsmede werkwijze voor het bereiden van de daarbij te gebruiken 5-nonylsalicylaldoximen.
DE1021082B (de) * 1954-06-02 1957-12-19 Siemens Ag Flaechentransistor mit fuenf Elektroden, die an fuenf abwechselnd aufeinanderfolgenden Halbleiterschichten vom n-Typ und p-Typ anliegen, deren zweite und vierte Schicht als Basisschichten dienen
US2898454A (en) * 1957-01-22 1959-08-04 Hazeltine Research Inc Five zone composite transistor with common zone grounded to prevent interaction
US2927204A (en) * 1957-01-22 1960-03-01 Hazeltine Research Inc Multiple unit transistor circuit with means for maintaining common zone at a fixed reference potential
US2980810A (en) * 1957-12-30 1961-04-18 Bell Telephone Labor Inc Two-terminal semiconductive switch having five successive zones
US2966434A (en) * 1958-11-20 1960-12-27 British Thomson Houston Co Ltd Semi-conductor devices
US2988677A (en) * 1959-05-01 1961-06-13 Ibm Negative resistance semiconductor device structure

Also Published As

Publication number Publication date
GB971261A (en) 1964-09-30
US3140963A (en) 1964-07-14
DE1213920B (de) 1966-04-07

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