NL258192A - - Google Patents

Info

Publication number
NL258192A
NL258192A NL258192DA NL258192A NL 258192 A NL258192 A NL 258192A NL 258192D A NL258192D A NL 258192DA NL 258192 A NL258192 A NL 258192A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL258192A publication Critical patent/NL258192A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F3/00Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/037Purification
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/261Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/165Transmutation doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL258192D 1959-12-15 NL258192A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US859810A US3076732A (en) 1959-12-15 1959-12-15 Uniform n-type silicon

Publications (1)

Publication Number Publication Date
NL258192A true NL258192A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family

ID=25331767

Family Applications (1)

Application Number Title Priority Date Filing Date
NL258192D NL258192A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1959-12-15

Country Status (5)

Country Link
US (1) US3076732A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1154878B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR1278241A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB972549A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL258192A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3255050A (en) * 1962-03-23 1966-06-07 Carl N Klahr Fabrication of semiconductor devices by transmutation doping
BE638518A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-08-03
US3451864A (en) * 1965-12-06 1969-06-24 Ibm Method of growing doped semiconductor material from a source which includes an unstable isotope which decays to a dopant element
US3341754A (en) * 1966-01-20 1967-09-12 Ion Physics Corp Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method
FR1562934A (fr) * 1967-01-20 1969-04-11 Fuji Shashin Film Kabushiki Kaisha Révélateur liquide et procédé de fabrication
DE2356376A1 (de) * 1973-11-12 1975-05-15 Siemens Ag Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung
DE2362264B2 (de) * 1973-12-14 1977-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von homogen n-dotierten siliciumeinkristallen durch bestrahlung mit thermischen neutronen
DE2534460C2 (de) * 1975-08-01 1986-03-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Entfernung der Oberflächenkontamination bei durch Kernumwandlung dotiertem Halbleitermaterial
US4277307A (en) * 1977-10-17 1981-07-07 Siemens Aktiengesellschaft Method of restoring Si crystal lattice order after neutron irradiation
DE2753488C2 (de) * 1977-12-01 1986-06-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
RU2202655C1 (ru) * 2002-04-23 2003-04-20 Московский государственный институт стали и сплавов (технологический университет) Способ получения резистентного кремния
US20100289121A1 (en) * 2009-05-14 2010-11-18 Eric Hansen Chip-Level Access Control via Radioisotope Doping

Also Published As

Publication number Publication date
US3076732A (en) 1963-02-05
GB972549A (en) 1964-10-14
FR1278241A (fr) 1961-12-08
DE1154878B (de) 1963-09-26

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