NL252131A - - Google Patents

Info

Publication number
NL252131A
NL252131A NL252131DA NL252131A NL 252131 A NL252131 A NL 252131A NL 252131D A NL252131D A NL 252131DA NL 252131 A NL252131 A NL 252131A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL252131A publication Critical patent/NL252131A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/033Diffusion of aluminum
NL252131D 1959-06-30 NL252131A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US823838A US3108359A (en) 1959-06-30 1959-06-30 Method for fabricating transistors

Publications (1)

Publication Number Publication Date
NL252131A true NL252131A (https=)

Family

ID=25239870

Family Applications (1)

Application Number Title Priority Date Filing Date
NL252131D NL252131A (https=) 1959-06-30

Country Status (5)

Country Link
US (1) US3108359A (https=)
CH (1) CH394399A (https=)
DE (1) DE1182750B (https=)
GB (1) GB908605A (https=)
NL (1) NL252131A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3421206A (en) * 1965-10-19 1969-01-14 Sylvania Electric Prod Method of forming leads on semiconductor devices
US3342884A (en) * 1965-11-18 1967-09-19 Phillips Petroleum Co Novel cyclohexyl derivatives of ethylene and methods for their preparation
US3357871A (en) * 1966-01-12 1967-12-12 Ibm Method for fabricating integrated circuits
DE1564608B2 (de) * 1966-05-23 1976-11-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen eines transistors
US4349691A (en) * 1977-04-05 1982-09-14 Solarex Corporation Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion
US4486946A (en) * 1983-07-12 1984-12-11 Control Data Corporation Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing
US6543617B2 (en) * 2001-03-09 2003-04-08 International Business Machines Corporation Packaged radiation sensitive coated workpiece process for making and method of storing same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
NL212349A (https=) * 1955-04-22 1900-01-01
NL121810C (https=) * 1955-11-04
NL210216A (https=) * 1955-12-02
US2806983A (en) * 1956-06-01 1957-09-17 Gen Electric Remote base transistor
US2845375A (en) * 1956-06-11 1958-07-29 Itt Method for making fused junction semiconductor devices
BE531769A (https=) * 1957-08-07 1900-01-01
US2984775A (en) * 1958-07-09 1961-05-16 Hoffman Electronics Corp Ruggedized solar cell and process for making the same or the like

Also Published As

Publication number Publication date
GB908605A (en) 1962-10-24
DE1182750B (de) 1964-12-03
CH394399A (de) 1965-06-30
US3108359A (en) 1963-10-29

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