NL251185A - - Google Patents

Info

Publication number
NL251185A
NL251185A NL251185DA NL251185A NL 251185 A NL251185 A NL 251185A NL 251185D A NL251185D A NL 251185DA NL 251185 A NL251185 A NL 251185A
Authority
NL
Netherlands
Prior art keywords
gate
conductor
shield
sections
control
Prior art date
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL251185A publication Critical patent/NL251185A/xx
Priority claimed from US625512A external-priority patent/US3339165A/en
Priority claimed from US809815A external-priority patent/US2966647A/en
Priority claimed from US824120A external-priority patent/US3059196A/en
Priority claimed from US140119A external-priority patent/US3086130A/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/44Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/92Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of superconductive devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/30Devices switchable between superconducting and normal states
    • H10N60/35Cryotrons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/30Devices switchable between superconducting and normal states
    • H10N60/35Cryotrons
    • H10N60/355Power cryotrons

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

935,209. Superconductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 27, 1960 [June 30, 1959], No. 22389/60. Class 37. [Also in Group XXXIX] In a superconductive gating circuit at least a gating section consists of a pair of thin films arranged adjacent each other so that a controlled conductor can drive both of the gating sections conductive. Fig. 1 shows an arrangement in which the gate conductor 16 is of lead and has two " soft " sections 10A, 10B of tin. The control element 12 is of lead and is provided with two narrow portions 12A, 12B which traverse the gate element at the soft sections 10A, 10B. The narrow sections of the control conductor enable a small signal applied by a source 14 to control a larger signal applied by source 16. Because these sections 10A, 10B are driven resistive by signal in control conductor 12, the resistance introduced to the gate is twice that introduced by a single crossing. Additionally each of the two sections of the gate is provided with an image conductor which acts as a superconductor shield for the other, causing the current in each section to be more uniformly distributed and thus to be greater without driving the gate resistive. In the arrangement of Fig. 2 (not shown), the control loop is outside the gate loop while in that of Fig. 3 (also not shown) the control loop is replaced by a single conductor passing between the two arms of the gate conductor. In the arrangement of Fig. 4, current applied to one or the other of control conductors 32, 36 make the corresponding side 26, 28 of the gate loop resistive. If desired, this gate loop can operate external circuits by acting as the control conductors of the gate conductors 42, 41. If the upper and lower arms of the various circuits are not accurately aligned persistent current may be trapped in the circuit. This danger is removed by superconductive shield 50. Fig. 4a shows a section on the line a-a of Fig. 4. The shield 50 consists of hard superconductive material deposited on a substrate 50. Insulating material 54 is then deposited followed by the lower section of control element 36. Next follows a layer of insulating material 56 which does not extend the full width of the section so that when the upper control element is deposited it makes connection with the lower at the lefthand end of the device. Fig. 4a also shows the upper and lower sections of deposited gate conductor 28. Fig. 5 shows a circuit having a bifilar loop in combination with single conductors and upper, lower and intermediate shield conductors. The gate conductor extends from an input terminal 74 along a single strip 72A, upper and lower strips 72B, 72C and a single strip 72D returning through upper and lower shield members 78, 80 to which it is joined at 76 to terminals 84, 92. The bifilar loop is provided with gate sections 72E, 72F between which it passes from terminal 88 between upper and lower shields 78, 80 to a junction with both of the shields at 90. A bridging shield 82 is connected to the lower shield 80 to the right of gate conductor 72B as shown broken away; it is connected to the upper shield 78 to the left of conductor 72C as shown in section in the drawings. All the shields are connected along the left edge of bridging shield 82 and 99. As in the case of Fig. 4 all of the conductors and the shields with spacing insulation are formed of deposited layers. Specifications 862,178 and 935,208 are referred to.
NL251185D 1956-11-30 NL251185A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US625512A US3339165A (en) 1956-11-30 1956-11-30 Magnetic switching device
US809815A US2966647A (en) 1959-04-29 1959-04-29 Shielded superconductor circuits
US824120A US3059196A (en) 1959-06-30 1959-06-30 Bifilar thin film superconductor circuits
US140119A US3086130A (en) 1961-09-22 1961-09-22 Cryogenic coupling device

Publications (1)

Publication Number Publication Date
NL251185A true NL251185A (en)

Family

ID=27495412

Family Applications (1)

Application Number Title Priority Date Filing Date
NL251185D NL251185A (en) 1956-11-30

Country Status (4)

Country Link
DE (4) DE1049960B (en)
FR (1) FR1194454A (en)
GB (5) GB862178A (en)
NL (1) NL251185A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL258325A (en) * 1959-11-24 1964-04-27
US3310767A (en) * 1963-05-29 1967-03-21 Gen Electric Power cryotron
GB1053476A (en) * 1963-10-09
JP2955931B1 (en) * 1998-07-17 1999-10-04 セイコーインスツルメンツ株式会社 Radiation detection element

Also Published As

Publication number Publication date
DE1049960B (en) 1959-02-05
GB995140A (en) 1965-06-16
GB862178A (en) 1961-03-01
DE1162406B (en) 1964-02-06
GB935208A (en) 1963-08-28
FR1194454A (en) 1959-11-10
DE1144335B (en) 1963-02-28
DE1120502B (en) 1961-12-28
GB990297A (en) 1965-04-28
GB935209A (en) 1963-08-28

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