NL234451A - - Google Patents
Info
- Publication number
- NL234451A NL234451A NL234451DA NL234451A NL 234451 A NL234451 A NL 234451A NL 234451D A NL234451D A NL 234451DA NL 234451 A NL234451 A NL 234451A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US705685A US2961305A (en) | 1957-12-27 | 1957-12-27 | Method of growing semiconductor crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL234451A true NL234451A (US20110009641A1-20110113-C00256.png) |
Family
ID=24834518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL234451D NL234451A (US20110009641A1-20110113-C00256.png) | 1957-12-27 |
Country Status (4)
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL126240C (US20110009641A1-20110113-C00256.png) * | 1958-02-19 | |||
| US3041058A (en) * | 1958-11-19 | 1962-06-26 | Straumann Inst Ag | Heat treatment apparatus |
| NL133150C (US20110009641A1-20110113-C00256.png) * | 1959-12-23 | |||
| US3279896A (en) * | 1960-10-26 | 1966-10-18 | Itt | Crucible seal |
| NL273326A (US20110009641A1-20110113-C00256.png) * | 1961-04-14 | |||
| US3447902A (en) * | 1966-04-04 | 1969-06-03 | Motorola Inc | Single crystal silicon rods |
| DE1519902C3 (de) * | 1966-09-24 | 1975-07-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| US3776703A (en) * | 1970-11-30 | 1973-12-04 | Texas Instruments Inc | Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil |
| US4121965A (en) * | 1976-07-16 | 1978-10-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Method of controlling defect orientation in silicon crystal ribbon growth |
| US4324610A (en) * | 1978-03-20 | 1982-04-13 | Motorola, Inc. | Method for the controlled melting of semiconductor bodies |
| DE4318184A1 (de) * | 1993-06-01 | 1994-12-08 | Wacker Chemitronic | Verfahren und Vorrichtung zum Ziehen von Einkristallen |
| JP2008156166A (ja) * | 2006-12-25 | 2008-07-10 | Sumco Solar Corp | シリコンインゴットの鋳造方法および切断方法 |
| US8536491B2 (en) * | 2009-03-24 | 2013-09-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Rotatable and tunable heaters for semiconductor furnace |
| WO2011063795A1 (de) | 2009-11-24 | 2011-06-03 | Forschungsverbund Berlin E. V. | Verfahren und vorrichtung zur herstellung von einkristallen aus halbleitermaterial |
| DE102010040464A1 (de) | 2010-09-09 | 2012-03-15 | Wacker Chemie Ag | Verfahren zur Herstellung eines versetzungsfreien einkristallinen Stabes aus Silicium |
| RU182737U1 (ru) * | 2016-12-29 | 2018-08-29 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Северо-Кавказский горно-металлургический институт (государственный технологический университет)" (СКГМИ (ГТУ) | Устройство для получения высокочистого монокристалла зонной плавкой |
| CN111115636B (zh) * | 2020-01-10 | 2022-09-30 | 昆明理工大学 | 一种用于冶金级硅电磁悬浮处理的电磁悬浮线圈和方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2686864A (en) * | 1951-01-17 | 1954-08-17 | Westinghouse Electric Corp | Magnetic levitation and heating of conductive materials |
| BE525102A (US20110009641A1-20110113-C00256.png) * | 1952-12-17 | 1900-01-01 | ||
| DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
| US2747971A (en) * | 1953-07-20 | 1956-05-29 | Westinghouse Electric Corp | Preparation of pure crystalline silicon |
| US2793103A (en) * | 1954-02-24 | 1957-05-21 | Siemens Ag | Method for producing rod-shaped bodies of crystalline material |
| US2743199A (en) * | 1955-03-30 | 1956-04-24 | Westinghouse Electric Corp | Process of zone refining an elongated body of metal |
-
0
- NL NL234451D patent/NL234451A/xx unknown
-
1957
- 1957-12-27 US US705685A patent/US2961305A/en not_active Expired - Lifetime
-
1958
- 1958-12-20 DE DEG25999A patent/DE1207920B/de active Pending
- 1958-12-23 GB GB41472/58A patent/GB838770A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US2961305A (en) | 1960-11-22 |
| GB838770A (en) | 1960-06-22 |
| DE1207920B (de) | 1965-12-30 |
