NL233303A - - Google Patents

Info

Publication number
NL233303A
NL233303A NL233303DA NL233303A NL 233303 A NL233303 A NL 233303A NL 233303D A NL233303D A NL 233303DA NL 233303 A NL233303 A NL 233303A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL233303A publication Critical patent/NL233303A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
NL233303D 1957-11-30 NL233303A (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2924760X 1957-11-30

Publications (1)

Publication Number Publication Date
NL233303A true NL233303A (en, 2012)

Family

ID=8001430

Family Applications (1)

Application Number Title Priority Date Filing Date
NL233303D NL233303A (en, 2012) 1957-11-30

Country Status (3)

Country Link
US (1) US2924760A (en, 2012)
FR (1) FR1220840A (en, 2012)
NL (1) NL233303A (en, 2012)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3018539A (en) * 1956-11-06 1962-01-30 Motorola Inc Diffused base transistor and method of making same
DE1130523B (de) * 1958-01-22 1962-05-30 Siemens Ag Anordnung mit mindestens drei pnp-bzw. npn-Flaechentransistoren
US3063879A (en) * 1959-02-26 1962-11-13 Westinghouse Electric Corp Configuration for semiconductor devices
US3109758A (en) * 1959-10-26 1963-11-05 Bell Telephone Labor Inc Improved tunnel diode
FR1281944A (fr) * 1959-11-10 1962-01-19 Westinghouse Electric Corp Dispositif à semi-conducteur à plusieurs bornes
US3124640A (en) * 1960-01-20 1964-03-10 Figure
US3263138A (en) * 1960-02-29 1966-07-26 Westinghouse Electric Corp Multifunctional semiconductor devices
NL262767A (en, 2012) * 1960-04-01
NL254591A (en, 2012) * 1960-08-12
NL269092A (en, 2012) * 1960-09-09 1900-01-01
US3171068A (en) * 1960-10-19 1965-02-23 Merck & Co Inc Semiconductor diodes
US3210617A (en) * 1961-01-11 1965-10-05 Westinghouse Electric Corp High gain transistor comprising direct connection between base and emitter electrodes
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
US3254276A (en) * 1961-11-29 1966-05-31 Philco Corp Solid-state translating device with barrier-layers formed by thin metal and semiconductor material
US3214652A (en) * 1962-03-19 1965-10-26 Motorola Inc Transistor comprising prong-shaped emitter electrode
DE1209211B (de) * 1962-03-27 1966-01-20 Siemens Ag Steuerbares Halbleiterbauelement mit mindestens drei pn-UEbergaengen und mit einer Steuerelektrode
DE1202906B (de) * 1962-05-10 1965-10-14 Licentia Gmbh Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen
US3293513A (en) * 1962-08-08 1966-12-20 Texas Instruments Inc Semiconductor radiant diode
US3241013A (en) * 1962-10-25 1966-03-15 Texas Instruments Inc Integral transistor pair for use as chopper
US3191070A (en) * 1963-01-21 1965-06-22 Fairchild Camera Instr Co Transistor agg device
GB1054514A (en, 2012) * 1963-04-05 1900-01-01
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
NL136562C (en, 2012) * 1963-10-24
DE1439478A1 (de) * 1964-12-01 1968-10-31 Siemens Ag Flaechentransistor zum Betrieb in Regelschaltungen
US3287610A (en) * 1965-03-30 1966-11-22 Bendix Corp Compatible package and transistor for high frequency operation "compact"
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
US3922706A (en) * 1965-07-31 1975-11-25 Telefunken Patent Transistor having emitter with high circumference-surface area ratio
US3584268A (en) * 1967-03-03 1971-06-08 Xerox Corp Inverted space charge limited triode
US3465214A (en) * 1967-03-23 1969-09-02 Mallory & Co Inc P R High-current integrated-circuit power transistor
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
BE758009A (fr) * 1969-10-27 1971-04-26 Western Electric Co Dispositif a impedance reglable pour circuit integre
US3935587A (en) * 1974-08-14 1976-01-27 Westinghouse Electric Corporation High power, high frequency bipolar transistor with alloyed gold electrodes
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2771382A (en) * 1951-12-12 1956-11-20 Bell Telephone Labor Inc Method of fabricating semiconductors for signal translating devices
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices

Also Published As

Publication number Publication date
US2924760A (en) 1960-02-09
FR1220840A (fr) 1960-05-27

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