NL230316A - - Google Patents

Info

Publication number
NL230316A
NL230316A NL230316DA NL230316A NL 230316 A NL230316 A NL 230316A NL 230316D A NL230316D A NL 230316DA NL 230316 A NL230316 A NL 230316A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL230316A publication Critical patent/NL230316A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
NL230316D 1958-08-07 NL230316A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL230316 1958-08-07

Publications (1)

Publication Number Publication Date
NL230316A true NL230316A (en:Method)

Family

ID=19751303

Family Applications (2)

Application Number Title Priority Date Filing Date
NL230316D NL230316A (en:Method) 1958-08-07
NL111773D NL111773C (en:Method) 1958-08-07

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL111773D NL111773C (en:Method) 1958-08-07

Country Status (6)

Country Link
US (1) US3074826A (en:Method)
CH (1) CH376186A (en:Method)
DE (1) DE1105524B (en:Method)
FR (1) FR1232095A (en:Method)
GB (1) GB917773A (en:Method)
NL (2) NL111773C (en:Method)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121713C (en:Method) * 1960-01-30
US3220895A (en) * 1961-08-25 1965-11-30 Raytheon Co Fabrication of barrier material devices
US3211594A (en) * 1961-12-19 1965-10-12 Hughes Aircraft Co Semiconductor device manufacture
NL287617A (en:Method) * 1962-01-12
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
US3307088A (en) * 1962-03-13 1967-02-28 Fujikawa Kyoichi Silver-lead alloy contacts containing dopants for semiconductors
US3257589A (en) * 1962-05-22 1966-06-21 Texas Instruments Inc Transistors and the fabrication thereof
US3268375A (en) * 1962-05-22 1966-08-23 Gordon J Ratcliff Alloy-diffusion process for fabricating germanium transistors
NL302804A (en:Method) * 1962-08-23 1900-01-01
NL297821A (en:Method) * 1962-10-08
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3235419A (en) * 1963-01-15 1966-02-15 Philips Corp Method of manufacturing semiconductor devices
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3513041A (en) * 1967-06-19 1970-05-19 Motorola Inc Fabrication of a germanium diffused base power transistor
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor
US2836522A (en) * 1952-11-15 1958-05-27 Rca Corp Junction type semiconductor device and method of its manufacture
BE531626A (en:Method) * 1953-09-04
US2907969A (en) * 1954-02-19 1959-10-06 Westinghouse Electric Corp Photoelectric device
BE542380A (en:Method) * 1954-10-29
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies

Also Published As

Publication number Publication date
NL111773C (en:Method)
FR1232095A (fr) 1960-10-05
DE1105524B (de) 1961-04-27
CH376186A (de) 1964-03-31
US3074826A (en) 1963-01-22
GB917773A (en) 1963-02-06

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