NL21710C - - Google Patents

Info

Publication number
NL21710C
NL21710C NL21710DA NL21710C NL 21710 C NL21710 C NL 21710C NL 21710D A NL21710D A NL 21710DA NL 21710 C NL21710 C NL 21710C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of NL21710C publication Critical patent/NL21710C/xx

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/07—Manufacture or treatment of devices having bodies comprising cuprous oxide [Cu2O] or cuprous iodide [CuI]
    • H10D48/071—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate or reduction treatment
    • H10D48/075—Reduction of the copper oxide or treatment of the oxide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
NL21710D 1926-09-16 NL21710C (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US135899A US1901563A (en) 1926-09-16 1926-09-16 Copper oxide rectifier

Publications (1)

Publication Number Publication Date
NL21710C true NL21710C (en:Method) 1900-01-01

Family

ID=22470267

Family Applications (1)

Application Number Title Priority Date Filing Date
NL21710D NL21710C (en:Method) 1926-09-16

Country Status (6)

Country Link
US (1) US1901563A (en:Method)
BE (1) BE344525A (en:Method)
DE (1) DE533446C (en:Method)
FR (1) FR640946A (en:Method)
GB (1) GB277684A (en:Method)
NL (1) NL21710C (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2699522A (en) * 1952-01-04 1955-01-11 Robert G Breckenridge Titanium dioxide rectifier
BE570133A (en:Method) * 1957-08-16

Also Published As

Publication number Publication date
FR640946A (fr) 1928-07-24
US1901563A (en) 1933-03-14
DE533446C (de) 1931-09-16
BE344525A (en:Method) 1900-01-01
GB277684A (en) 1927-10-27

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