NL212547A - - Google Patents

Info

Publication number
NL212547A
NL212547A NL212547DA NL212547A NL 212547 A NL212547 A NL 212547A NL 212547D A NL212547D A NL 212547DA NL 212547 A NL212547 A NL 212547A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL212547A publication Critical patent/NL212547A/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/04—Crucibles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D41/00—Casting melt-holding vessels, e.g. ladles, tundishes, cups or the like
    • B22D41/005—Casting melt-holding vessels, e.g. ladles, tundishes, cups or the like with heating or cooling means
    • B22D41/01—Heating means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/074—Horizontal melt solidification

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Clinical Laboratory Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL212547D 1956-11-28 NL212547A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL212547 1956-11-28

Publications (1)

Publication Number Publication Date
NL212547A true NL212547A (ja)

Family

ID=19750815

Family Applications (4)

Application Number Title Priority Date Filing Date
NL212547D NL212547A (ja) 1956-11-28
NL287659D NL287659A (ja) 1956-11-28
NL126067D NL126067C (ja) 1956-11-28
NL105823D NL105823C (ja) 1956-11-28

Family Applications After (3)

Application Number Title Priority Date Filing Date
NL287659D NL287659A (ja) 1956-11-28
NL126067D NL126067C (ja) 1956-11-28
NL105823D NL105823C (ja) 1956-11-28

Country Status (5)

Country Link
US (1) US3067139A (ja)
DE (2) DE1166486B (ja)
FR (1) FR1197694A (ja)
GB (1) GB820688A (ja)
NL (4) NL105823C (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1251721B (de) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration
US3637439A (en) * 1968-11-13 1972-01-25 Metallurgie Hoboken Process and apparatus for pulling single crystals of germanium
CS150710B1 (ja) * 1971-02-09 1973-09-17
US3755011A (en) * 1972-06-01 1973-08-28 Rca Corp Method for depositing an epitaxial semiconductive layer from the liquid phase
US4224100A (en) * 1978-06-16 1980-09-23 Litton Systems, Inc. Method and apparatus for making crystals
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
DE3220343A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner siliciumstaebe
DE3316547C2 (de) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen
DE3830929A1 (de) * 1988-09-12 1990-03-15 Kernforschungsanlage Juelich Drehdurchfuehrung fuer rezipienten mit heisser wandung
JP2006308267A (ja) * 2005-05-02 2006-11-09 Iis Materials:Kk るつぼ装置及びそれを用いた溶融材料の凝固方法
KR100995927B1 (ko) * 2008-10-16 2010-11-22 한국에너지기술연구원 실리콘 전자기 유도 용융용 흑연 도가니 및 이를 이용한 실리콘 용융 정련 장치
US20130067959A1 (en) * 2008-10-16 2013-03-21 Korea Institute Of Energy Research A graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible
KR101063250B1 (ko) * 2008-10-16 2011-09-07 한국에너지기술연구원 실리콘 전자기 유도 용융용 흑연 도가니 및 이를 이용한 실리콘 용융 정련 장치
WO2011067201A1 (en) * 2009-12-04 2011-06-09 Solarworld Innovations Gmbh Device for holding silicon melt

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US65597A (en) * 1867-06-11 Improvement in the constbuction of pots foe chaebing ob burning bones
NL57010C (ja) * 1941-05-01
US2576267A (en) * 1948-10-27 1951-11-27 Bell Telephone Labor Inc Preparation of germanium rectifier material
GB701790A (en) * 1949-09-24 1954-01-06 Eastman Kodak Co Improvements in processes for coating with metals by thermal evaporation in vacuo and apparatus therefor
NL74999C (ja) * 1952-01-21
US2773923A (en) * 1953-01-26 1956-12-11 Raytheon Mfg Co Zone-refining apparatus

Also Published As

Publication number Publication date
NL126067C (ja)
GB820688A (en) 1959-09-23
DE1519836B1 (de) 1970-05-14
NL105823C (ja)
FR1197694A (fr) 1959-12-02
NL287659A (ja)
DE1166486B (de) 1964-03-26
US3067139A (en) 1962-12-04

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