NL2030680B1 - Tin dioxide oxide thin film, preparation method thereof and application thereof in hydrogen detection - Google Patents
Tin dioxide oxide thin film, preparation method thereof and application thereof in hydrogen detection Download PDFInfo
- Publication number
- NL2030680B1 NL2030680B1 NL2030680A NL2030680A NL2030680B1 NL 2030680 B1 NL2030680 B1 NL 2030680B1 NL 2030680 A NL2030680 A NL 2030680A NL 2030680 A NL2030680 A NL 2030680A NL 2030680 B1 NL2030680 B1 NL 2030680B1
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- NL
- Netherlands
- Prior art keywords
- thin film
- tin dioxide
- sputtering
- hydrogen
- oxide thin
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Thermal Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Physical Vapour Deposition (AREA)
Claims (10)
1. Een tindioxide oxide dunne film met een kristalfasestructuur van rutielstructuur, waarbij de weerstand voor de mtroductie van waterstof op kamertemperatuur 80 tot 100 Q is, en de weerstand na introductie van waterstof 50 tot 70 Q is.
2. De tindioxide oxide dunne film volgens claim 1, waarbij de weerstand voor de introductie van waterstof 80 tot 85 Q is; of de weerstand na introductie van waterstof 65 tot 70 Q is.
3. Een werkwijze voor het voorbereiden van een tindioxide oxide dunne film, waarbij tin wordt gemaakt in een neergeslagen tindioxide dunne film door middel van distaal plasma sputteren, en waarna uitgloeien wordt toegepast waarbij dus een dunne rutielfilm van tindioxide wordt verkregen.
4. De werkwijze voor het voorbereiden van een tindioxide oxide dunne film volgens claim 3, waarbij de uitgloeitemperatuur 300 tot 500°C is.
5. De werkwijze voor het voorbereiden van een tindioxide oxide dunne film volgens claim 3, waarbij zuurstof een reactief gas in distaal plasma sputteren 1s, en een vloeisnelheid van zuurstof 1 tot 10 scem is; of, argon gas een plasma gasbron in distal plasma sputteren is en de vloeisnelheid van argon 50 tot 100 sccm is.
6. De werkwijze voor het voorbereiden van een tindioxide oxide dunne film volgens claim 3, waarbij de kracht van een plasma-emissiebron bij distaal plasma sputteren 300 tot 500 W is; of een versnellende instelkracht van doelmateriaal bij distaal plasma sputteren 50 tot 100 W 1s.
7. De werkwijze voor het voorbereiden van een tindioxide oxide dunne film van volgens claim 3, waarbij een druk in een sputterkamer bij distaal plasma sputteren 2 tot 510% mbar is; of een sputtersnelheid bij distaal plasma sputteren 10 tot 50 nm/min is, en sputtertijd 10 tot 20 minuten is; of een sputtertemperatuur 20 tot 50°C 1s bij distaal plasma sputteren, en een temperatuur van een substraat kamertemperatuur is.
8. Een toepassing van de tindioxide oxide dunne film volgens claims 1 of 2, of de tindioxide oxide dunne film bereid door middel van de werkwijze volgens één van de claims 3 tot 7 bij waterstofdetectie.
9. Een waterstofgassensor, omvattende een gasgevoelig element en een vast kader, waarbij het gasgevoelige element is vastgemaakt aan het vaste kader, en het gasgevoelige element de tindioxide oxide dunne film volgens claim l of 2 is, of de tindioxide oxide dunne film bereid door middel van de werkwijze volgens één van de claims 3 tot 7 is.
10. Een werkwijze van gasdetectie, waarbij een te meten gas bestaande uit waterstof doorheen de dunne film van tindioxide volgens claim 1 of 2 gebracht wordt of doorheen de dunne film van tindioxide voorbereid door middel van de methode volgens één van de claims 3 tot 7, zodat de resistentieverandering van de dunne film van tindioxide gedetecteerd wordt.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110402049.XA CN113136547B (zh) | 2021-04-14 | 2021-04-14 | 二氧化锡氧化物薄膜及制备方法与其在检测氢气中的应用 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2030680A NL2030680A (en) | 2022-10-24 |
| NL2030680B1 true NL2030680B1 (en) | 2022-10-28 |
Family
ID=76812577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2030680A NL2030680B1 (en) | 2021-04-14 | 2022-01-25 | Tin dioxide oxide thin film, preparation method thereof and application thereof in hydrogen detection |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113136547B (nl) |
| NL (1) | NL2030680B1 (nl) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244406A (zh) * | 2015-10-23 | 2016-01-13 | 中国石油大学(华东) | 基于钯/二氧化锡/硅异质结的紫外光探测器及其制备方法 |
| CN105821378B (zh) * | 2016-05-20 | 2019-03-08 | 郑州大学 | 一种铌掺杂二氧化锡透明导电膜及其制备方法 |
| US20190339227A1 (en) * | 2018-05-03 | 2019-11-07 | King Fahd University Of Petroleum And Minerals | Room temperature hydrogen gas sensor |
| CN111705306A (zh) * | 2020-07-21 | 2020-09-25 | 深圳扑浪创新科技有限公司 | 一种锌掺杂氧化锡透明导电薄膜及其制备方法和用途 |
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2021
- 2021-04-14 CN CN202110402049.XA patent/CN113136547B/zh active Active
-
2022
- 2022-01-25 NL NL2030680A patent/NL2030680B1/en active
Also Published As
| Publication number | Publication date |
|---|---|
| NL2030680A (en) | 2022-10-24 |
| CN113136547A (zh) | 2021-07-20 |
| CN113136547B (zh) | 2022-09-16 |
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