NL2030086B1 - Method and device for bonding of substrates with electromagnetic irradiation - Google Patents

Method and device for bonding of substrates with electromagnetic irradiation Download PDF

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Publication number
NL2030086B1
NL2030086B1 NL2030086A NL2030086A NL2030086B1 NL 2030086 B1 NL2030086 B1 NL 2030086B1 NL 2030086 A NL2030086 A NL 2030086A NL 2030086 A NL2030086 A NL 2030086A NL 2030086 B1 NL2030086 B1 NL 2030086B1
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adhesive layer
substrate
transparent
substrates
bonding
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NL2030086A
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Dutch (nl)
Inventor
Tussing Sebastian
Kirner Raoul
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Suss Microtec Lithography Gmbh
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Publication of NL2030086B1 publication Critical patent/NL2030086B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The invention relates a method for bonding of two substrates (12, 14) comprising the steps of: providing a first substrate (12), a second substrate (14) and an adhesive layer (20) to a bond 5 chamber (16), wherein at least one of the substrates (12) is transparent for electromagnetic irradiation comprising electromagnetic waves of a wavelength at which the adhesive layer (20) is curable; bonding the substrates (12, 14) with the adhesive layer (20) inside of the bond chamber (16) such that an aligned substrate stack is formed; and irradiating the adhesive layer (20) inside of the bond chamber (16) with the electromagnetic irradiation, thereby at 10 least partially curing the adhesive layer (20). Furthermore, the invention relates to a device (10) for bonding of two substrates (12, 14) with electromagnetic irradiation. Fig. 1

Description

P35428NL0O0/ABL
Title: Method and device for bonding of substrates with electromagnetic irradiation
The present invention relates to a method and a device for bonding, in particular temporary bonding, of two substrates, in particular two wafers, with electromagnetic irradiation, in particular ultraviolet irradiation.
The packaging density of semiconductor devices significantly increased during recent years.
Integrated circuit (IC) devices have become more powerful, yet smaller and thinner at the same time. However, the devices, which are often less than 100 um in thickness, are very fragile. Special processing strategies and substrate or wafer bonding techniques, such as permanent or temporary substrate/wafer bonding, have been developed to address the technical problems connected to manufacturing such devices.
Commonly, wafer bonding involves attaching two aligned wafers to each other by means of adhesive compounds that are applied between the wafers and cured thermally or by electromagnetic irradiation comprising electromagnetic waves, for example ultraviolet (UV) irradiation.
In industrial processing, wafer stacks are typically formed prior to the UV or thermal curing in a separate process station inside of a bond chamber. From this station, the wafer stack is transferred to a curing chamber, in which the UV irradiation and/or temperature is applied.
However, as the adhesive layer is not cured, movement of the wafers with respect to each other can occur during this transfer, resulting in a misaligned wafer stack.
Hence, there is a need for a means to avoid such misalignment and to improve process control and reproducibility of substrate/wafer bonding processes in general.
The object of the invention is solved by a method for bonding, in particular temporary bonding, of two substrates, in particular wafers, comprising the steps of: providing a first substrate, a second substrate and an adhesive layer to a bond chamber, wherein at least one of the substrates is transparent for electromagnetic irradiation, in particular ultraviolet (UV) irradiation, comprising electromagnetic waves of a wavelength at which the adhesive layer is curable; bonding the substrates with the adhesive layer inside the bond chamber such that an aligned substrate stack is formed; and irradiating the adhesive layer inside of the bond chamber with the electromagnetic waves, thereby at least partially curing the adhesive layer.
Especially, the method is suitable for bonding substrates being wafers.
For example, the electromagnetic waves used in the method have a wavelength in the range of the UV spectrum. In other words, UV irradiation can be used in the method.
The method is especially suitable for temporary substrate bonding.
Alternatively, the method can be used for other substrate bonding techniques, e.g. permanent substrate bonding.
By irradiating the adhesive layer inside of the bond chamber, thus at least partially curing it, the substrates get locked in their aligned position, thereby avoiding any relative movement during subsequent processing steps, in particular during transfer to other processing stations.
Furthermore, by locking the substrates in their aligned position, the adhesive layer can subsequently be cured thermally without or with reduced substrate bowing or warping.
Optionally, the step of irradiating the adhesive layer inside of the bond chamber, thereby at least partially curing the adhesive layer is carried out simultaneously with the step of bonding the substrates with the adhesive layer inside of the bond chamber such that an aligned substrate stack is formed. Thus, sequential steps are at least partly avoided resulting in a reduction of processing time.
The bonding step can at least comprise an, in particular horizontal and/or lateral alignment of the substrates and/or an, in particular vertical pressing of the substrates against each other, e.g. via compression between chucks, such that an aligned substrate stack is formed.
In one variant, the transparent substrate is located on a transparent chuck and the adhesive layer is irradiated through the transparent chuck and the transparent substrate. This allows to couple the electromagnetic light into the transparent substrate and adhesive layer through the chuck, particularly also from the bottom side of the curing chamber. Furthermore, the transparent chuck itself can act as light guiding element, spreading and/or homogenizing the electromagnetic irradiation.
Preferably, the transparent chuck and a second chuck, located at an opposite side of the substrates, apply a force, in particular a compressive force, to the substrates during electromagnetic irradiation. It is thereby ensured that the substrates are in a properly aligned and flatly pressed state when being locked together.
In another preferred embodiment, the temperature of the first and/or second substrate and/or adhesive layer is controlled inside the bond chamber by a temperature control unit before and/or during irradiating the adhesive layer. The temperature control allows to precisely regulate the adhesive layer temperature and thereby also the adhesive material viscosity independent from any heat sources, such as the electromagnetic irradiation source. If the amount of heat introduced to the system is too high and/or the viscosity of the adhesive material too low, the substrate stack and thus the adhesive layer can be cooled actively. On the other hand, the temperature control also allows increasing the temperature to reduce the adhesive material viscosity and/or to support the (UV) curing process.
In a simple preferred arrangement, the first or second substrate is located on and in direct contact with a chuck, wherein the temperature control unit controls the temperature of the chuck. The substrates are typically very thin and thermally highly conductive. Thus, a direct heating of a substrate in contact with the chuck enables fast adjustment of the adhesive layer temperature and therefore appropriate reaction to sudden process parameter changes.
In a further preferred embodiment of the method, the adhesive layer is exposed to a vacuum prior to and/or during electromagnetic irradiation. By applying the vacuum, gas bubbles can be removed from the uncured adhesive layer, thereby increasing the quality and homogeneity of the bond.
The object of the invention is also solved by a device for bonding, in particular temporary bonding, of two substrates, in particular wafers, comprising: a bond chamber with a substrate space for receiving a first substrate, a second substrate and an adhesive layer disposed between the first and the second substrate, wherein at least one of the substrates is transparent for electromagnetic irradiation, in particular ultraviolet (UV) irradiation, comprising waves of a wavelength at which the adhesive layer is curable; and an electromagnetic irradiation source, in particular a UV irradiation source, which is located such that the emitted electromagnetic irradiation can inside of the bond chamber pass through the transparent substrate onto the adhesive layer. The advantages and features that were discussed for the method also apply for the device.
Especially, the device is suitable for bonding substrates being wafers.
For example, the electromagnetic waves used in the device have a wavelength in the range of the UV spectrum. In other words, UV irradiation can be used in the device.
The proposed device is especially suitable for temporary substrate bonding.
Alternatively, the device can be used for other substrate bonding techniques, e.g. permanent substrate bonding.
In one variant, the device comprises a chuck for holding the transparent substrate, wherein the chuck is transparent for the electromagnetic irradiation, in particular the UV irradiation.
This enables irradiating the substrates and/or adhesive layer through the chuck, in particular also from the bottom side of the bond chamber.
In a simple and particularly space-saving arrangement, the electromagnetic irradiation source is located such that emitted electromagnetic irradiation enters the transparent chuck in a circumferential direction.
In another embodiment, the transparent chuck has a first side configured to form a contact with the transparent substrate and a second side opposite to the first side, comprising a layer or structure adapted to reflect and/or scatter the electromagnetic irradiation. The additional layer prevents the electromagnetic irradiation from coupling out of the transparent chuck at undesired positions and/or homogenizes the electromagnetic irradiation before it reaches the transparent substrate.
The chuck may also have a temperature control means, in particular a Peltier element and/or an electric heating or cooling element and/or liquid filled channels. The advantages of a direct contact thermal control that were discussed for the method are enabled by this configuration and also apply to the device.
In another preferred embodiment, the device comprises a mechanical, electrostatic or vacuum alignment means adapted to aligning and/or to fix the first and the second substrate relative to each other and/or relative to the chuck. Thus, lateral movement between these parts is prevented, ensuring a proper alignment of the substrates, the chuck and the electromagnetic irradiation source.
To remove gas bubbles from the adhesion layer, the device can additionally comprise a vacuum pump adapted to apply a vacuum to the bond chamber.
In another preferred arrangement, the device comprises two chucks, wherein one chuck is movable in a vertical direction away from and/or towards the other chuck. This enables to apply a compressive force on the substrate stack and to lock it in between the two chucks, thereby removing excess adhesive material from the adhesive layer and confining the substrates in a desired alignment position for irradiation.
Further advantages and features will become apparent from the following description of the invention and from the appended figures, which show a non-limiting exemplary embodiment of the invention and in which: - Fig. 1 schematically shows a sectional side view of a first embodiment of a device for temporary bonding of two wafers with a transparent chuck and an array of light emitting diodes (LEDs) circumferentially surrounding the chuck; - Fig. 2 schematically shows a top view of the transparent chuck and LED array of Fig. 1; and - Fig. 3 schematically shows a side view of a second embodiment of a device for temporary bonding of two wafers with a transparent chuck and a an LED array located above chuck.
All embodiments in the following are related to temporary wafer bonding with UV irradiation.
However, other bonding techniques, e.g. permanent wafer bonding, substrates, e.g. glass or plastic substrates, or irradiation forms, e.g. infrared irradiation, are also conceivable.
Accordingly, substrates and wafers have the same reference signs 12 and 14.
Fig. 1 schematically shows a first embodiment of a device 10 for bonding, in particular temporary bonding, of two wafers 12, 14. The device 10 has a bond chamber 16 having walls which confine a substrate space 18.
In Fig. 1, an aligned wafer stack is located in the substrate space 18. The wafer stack consists of a transparent carrier wafer 12, a thin substrate wafer 14 aligned in parallel to the carrier wafer 12 and a UV curable adhesive layer 20 located between both wafers 12, 14.
The device 10 furthermore comprises a chuck 22 that is transparent for UV irradiation configured to hold the transparent wafer 12. In the embodiment, the chuck 22 is configured to form a direct contact with the transparent wafer 12 and comprises vacuum channels 24 for applying vacuum to a surface of the transparent wafer 12, thereby constraining it to a fixed position inside the bond chamber 16.
Of course, the invention is not limited to the described example. It is conceivable to apply other fixation and/or alignment means 24 for fixation of the wafers 12, 14. In particular, also mechanical means, such as clamps, or electrostatic means can be applied to fix the first and/or second wafer 12, 14 relative to each other and/or relative to the chuck 22.
The device 10 shown in Fig. 1 is furthermore equipped with a second chuck 26, which is movable in a vertical direction away from and/or towards the other chuck 22. In the depicted embodiment, both chucks 22, 26 can be moved such that the wafer stack can be mechanically locked in between them and/or a compressive force can be applied onto the wafer stack, thus forming an aligned bond.
The second chuck 26 is equipped with a Peltier element 28 for heating or cooling the wafer stack including the adhesive layer 20. Of course, also other temperature control means 28, such as electric heating or cooling elements and/or liquid filled channels at the surface of the chuck 26 or embedded inside the chuck 26 can be applied for the same purpose.
The device 10 furthermore comprises a UV irradiation source 30 which is located such that emitted UV irradiation inside of the bond chamber 16 can pass through the transparent chuck 22 and the transparent wafer 12 onto the adhesive layer 20.
As shown in Fig. 1 and Fig. 2, the irradiation source 30 consists of an array of LEDs 32 surrounding the transparent chuck 22 such that emitted UV irradiation can enter the transparent chuck 22 in a circumferential direction. For simplicity, only five LEDs 32 are shown in Fig. 2.
The LEDs 32 are adapted to emit UV irradiation in a spectral range in which the uncured adhesive layer 20 is absorbing.
The adhesive layer 20 may for example comprise a polymer and a photoactive component for starting a curing reaction, in particular a crosslinking and/or polymerization reaction.
Of course, the polymer can also have distinct absorption bands, which may or may not coincide with the photoactive component.
Suitable LEDs 32 might be for example Indiumgalliumnitride LEDs emitting at a wavelength of 365 nm.
The transparent chuck 22 has a first side in direct contact with the transparent wafer 12 and a second side, opposite to the first side, comprising a layer 34 adapted to reflect and to scatter
UV irradiation. The layer 34 or any other structure suitable to achieve the same purpose can for example be evaporated, etched, sputtered, laminated or applied by other comparable means onto the surface of the transparent chuck 22. In the depicted embodiment, the layer 34 prevents UV irradiation from coupling out of the transparent chuck 22 at undesired positions and homogenizes the irradiation intensity distribution. Reflected and scattered UV rays are exemplarily shown in Fig 1 as dotted lines.
The device embodiment presented in Fig. 1 furthermore comprises a vacuum pump 36 adapted to apply a vacuum to the bond chamber 16 for removing gas bubbles from the uncured adhesive layer 20.
Fig. 3 schematically shows a second embodiment of a device 10 for temporary bonding of two wafers 12, 14. The second embodiment corresponds in several essential features to the first embodiment, so that only the differences will be discussed below. Identical and functionally identical parts are provided with the same reference symbols.
The device embodiment of Fig. 3 does not have vacuum channels inside the transparent chuck 22, thus also avoiding potential shading effects, which might be caused by such channels. As a means 24 for fixing and aligning the first and second wafer 12, 14 with respect to each other and with respect to the chuck 22, mechanical clamps are applied instead.
Furthermore, unlike in the first embodiment, the UV irradiation source 30 is located on top of the transparent wafer 12 inside the walls of the bond chamber 16, such that emitted irradiation directly passes the transparent chuck 22 as well as the transparent wafer 12 without being reflected. Homogeneous illumination of the adhesive layer 20 is achieved by a dense packing of the single LEDs 32.
Of course, also other irradiation sources 30 can be used, such as mercury evaporation lamps or xenon lamps, located inside, outside and/or in the walls of the bond chamber 16.
The two different device embodiments shown in Fig 1 and Fig 3 are intended to be used for temporary bonding of two wafers 12, 14. To achieve this purpose, a method according to the invention can be applied, which will be described in the following.
In afirst step of the method, the first wafer 12, second wafer 14 and adhesive layer 20 are provided to the bond chamber 16. As described, the first wafer 12 is transparent for UV irradiation and the adhesive layer 20 is curable by UV irradiation.
In a second step, the wafers 12, 14 are bonded together with the adhesive layer 20 inside the bond chamber 16 such that an aligned wafer stack is formed. This is achieved by laterally moving the second chuck 26 towards the first chuck 22 such that both wafers 12, 14 and the adhesive layer 20 in between them are pressed together.
In a third step, the UV irradiation source 30 irradiates the adhesive layer 20 inside of the bond chamber 18, thereby at least partially curing it. Even if the adhesive layer 20 is not fully cured, the wafers 12, 14 get locked in their aligned position, thereby avoiding any relative movement during subsequent processing steps, in particular during transfer to other processing stations.
To save processing time, the second and third step can be carried out simultaneously. In particular, the UV irradiation source 30 can irradiate the adhesive layer 20 during bonding.
In the described embodiment of the method, the transparent wafer 12 is located on the transparent chuck 22 and the adhesive layer 20 is irradiated through the transparent chuck 22 and the transparent wafer 12.
Furthermore, both chucks 22, 26, which are located at opposite sides of the wafers 12, 14, apply a compressive force to the wafer stack, particularly also during irradiation. As the compressive force fixes both wafers 12, 14 in their position until the adhesive layer 20 is at least partially cured by the UV irradiation, proper alignment is ensured.
In the described embodiment of the method, the temperature of the first and second wafer 12, 14 as well as the adhesive layer 20 is controlled inside the bond chamber 16 by the temperature control unit 38 during the steps 2 and 3, in particular during irradiating the adhesive layer 20 with UV irradiation.
Precise temperature adjustment is achieved by controlling the temperature control means 28 inside the chuck 28, which is in direct contact with the wafer 14, via the temperature control unit 38. The temperature control can also be applied to adjust the temperature dependent viscosity of the uncured adhesive material and thus also the layer thickness of the adhesive layer 20.
Furthermore, in the described embodiment of the method, the adhesive layer 20 is exposed to a vacuum prior to and during irradiation to remove gas bubbles.
Hence, a highly reproducible bonding process is established.

Claims (15)

CONCLUSIESCONCLUSIONS 1. Werkwijze voor het hechten van twee substraten (12, 14) welke de stappen omvat van: het verschaffen van een eerste substraat (12), een tweede substraat (14) en een klevende laag (20) aan een hechtkamer (16), waarbij ten minste een van de substraten (12) transparant is voor elektromagnetische straling die elektromagnetische golven omvat met een golflengte waarbij de klevende laag (20) kan uitharden; het hechten van de substraten (12, 14) met de klevende laag (20) in de hechtkamer (16) zodanig dat een uitgelijnde substraatstapel wordt gevormd; en het bestralen van de klevende laag (20) in de hechtkamer (16) met de elektromagnetische straling, waardoor de klevende laag (20) ten minste deels uithardt.A method of bonding two substrates (12, 14) comprising the steps of: providing a first substrate (12), a second substrate (14) and an adhesive layer (20) to a bonding chamber (16), wherein at least one of the substrates (12) is transparent to electromagnetic radiation comprising electromagnetic waves having a wavelength at which the adhesive layer (20) can cure; bonding the substrates (12, 14) with the adhesive layer (20) in the bonding chamber (16) such that an aligned substrate stack is formed; and irradiating the adhesive layer (20) in the bonding chamber (16) with the electromagnetic radiation, causing the adhesive layer (20) to at least partially cure. 2. Werkwijze volgens conclusie 1, waarbij de stap van het bestralen van de klevende laag (20) in de hechtkamer (16), waardoor de klevende laag (20) ten minste deels uithardt, gelijktijdig wordt uitgevoerd met de stap van het hechten van de substraten (12, 14) met de klevende laag (20) in de hechtkamer (16), zodanig dat een uitgelijnde substraatstapel wordt gevormd.The method of claim 1, wherein the step of irradiating the adhesive layer (20) in the bonding chamber (16), causing the adhesive layer (20) to at least partially cure, is performed simultaneously with the step of bonding the substrates (12, 14) with the adhesive layer (20) in the bonding chamber (16) such that an aligned substrate stack is formed. 3. Werkwijze volgens conclusie 1 of 2, waarbij het transparante substraat (12) zich bevindt op een transparante kop (22) en waarbij de klevende laag (20) wordt bestraald via de transparante kop (22) en het transparante substraat (12).The method of claim 1 or 2, wherein the transparent substrate (12) is on a transparent head (22) and the adhesive layer (20) is irradiated through the transparent head (22) and the transparent substrate (12). 4. Werkwijze volgens conclusie 3, waarbij de transparante kop (22) en de tweede kop (26), die zich aan een tegenovergelegen zijde van de substraten (12, 14) bevindt, een kracht, in het bijzonder een compressieve kracht, uitoefenen op de substraten (12, 14) tijdens de elektromagnetische bestraling.A method according to claim 3, wherein the transparent head (22) and the second head (26), located on an opposite side of the substrates (12, 14), exert a force, in particular a compressive force, on the substrates (12, 14) during the electromagnetic irradiation. 5. Werkwijze volgens een of meer van de voorgaande conclusies, waarbij de temperatuur van het eerste en/of tweede substraat (12, 14) en/of de klevende laag (20) wordt geregeld in de hechtkamer (16) door een temperatuurregeleenheid (38) voorafgaand aan en/of tijdens het bestralen van de klevende laag (20).A method according to any one of the preceding claims, wherein the temperature of the first and/or second substrate (12, 14) and/or the adhesive layer (20) is controlled in the bonding chamber (16) by a temperature control unit (38). ) prior to and/or during irradiation of the adhesive layer (20). 6. Werkwijze volgens conclusie 5, waarbij de temperatuurregeleenheid (38) de temperatuur regelt van een kop (26) die in direct contact is met het eerste en/of tweede substraat (12, 14).The method of claim 5, wherein the temperature control unit (38) controls the temperature of a head (26) in direct contact with the first and/or second substrate (12, 14). 7. Werkwijze volgens een of meer van de voorgaande conclusies, waarbij de klevende laag (20) wordt blootgesteld aan een vacuüm voorafgaand aan en/of tijdens de elektromagnetische bestraling.A method according to any one of the preceding claims, wherein the adhesive layer (20) is exposed to a vacuum prior to and/or during the electromagnetic irradiation. 8. Inrichting voor het hechten van twee substraten (12, 14}, welke omvat: een hechtkamer (18) met een substraatruimte (18) voor het ontvangen van een eerste substraat (12), een tweede substraat (14) en een klevende laag (20) die is opgesteld tussen het eerste en het tweede substraat (12, 14), waarbij ten minste een van de substraten (12) transparant is voor elektromagnetische straling die golven omvat met een golflengte waarbij de klevende laag (20) kan uitharden; en een elektromagnetische bestralingsbron (30) die zodanig is opgesteld dat de uitgezonden elektromagnetische straling in de hechtkamer (16) kan passeren door het transparante substraat (12) op de klevende laag (20).Apparatus for bonding two substrates (12, 14}, comprising: a bonding chamber (18) having a substrate space (18) for receiving a first substrate (12), a second substrate (14) and an adhesive layer (20) disposed between the first and second substrates (12, 14), at least one of the substrates (12) being transparent to electromagnetic radiation comprising waves having a wavelength at which the adhesive layer (20) can cure; and an electromagnetic radiation source (30) arranged so that the emitted electromagnetic radiation in the bonding chamber (16) can pass through the transparent substrate (12) on the adhesive layer (20). 9. Inrichting volgens conclusie 8, omvattende een kop (22) voor het vasthouden van het transparante substraat (12), met het kenmerk, dat de kop (22) transparant is voor de elektromagnetische straling.An apparatus according to claim 8, comprising a head (22) for holding the transparent substrate (12), characterized in that the head (22) is transparent to the electromagnetic radiation. 10. Inrichting volgens conclusie 9, waarbij de elektromagnetische bestralingsbron (30) zodanig is opgesteld, dat de uitgezonden elektromagnetische straling de transparante kop (22) in een omtreksrichting binnentreedt.The apparatus according to claim 9, wherein the electromagnetic radiation source (30) is arranged such that the emitted electromagnetic radiation enters the transparent head (22) in a circumferential direction. 11. Inrichting volgens conclusie 9 of 10, waarbij de transparante kop {22) een eerste zijde heeft die is geconfigureerd om een contact te vormen met het transparante substraat (12) en een tweede zijde tegenover de eerste zijde, omvattende een laag (34) en/of structuur die is ingericht om elektromagnetische straling te reflecteren en/of te verstrooien.The device of claim 9 or 10, wherein the transparent head {22) has a first side configured to contact the transparent substrate (12) and a second side opposite the first side comprising a layer (34) and/or structure adapted to reflect and/or scatter electromagnetic radiation. 12. Inrichting volgens een of meer van de conclusies 8 tot en met 11, omvattende een kop (26) met een temperatuurregelmiddel (28), in het bijzonder een Peltierelement en/of een elektrisch verwarmings- of koelelement en/of met vloeistof gevulde kanalen.Device according to one or more of claims 8 to 11, comprising a head (26) with a temperature control means (28), in particular a Peltier element and/or an electric heating or cooling element and/or channels filled with liquid . 13. Inrichting volgens een of meer van de conclusies 8 tot en met 12, omvattende een mechanisch- , elektrostatisch- of vacuümuitlijnmiddel (24) dat is ingericht om het eerste en het tweede substraat (12, 14) uit te lijnen en/of fixeren ten opzichte van elkaar en/of ten opzichte van een kop (22, 26)An apparatus according to any one of claims 8 to 12, comprising a mechanical, electrostatic or vacuum alignment means (24) arranged to align and/or fix the first and second substrates (12, 14) relative to each other and/or relative to a head (22, 26) 14. Inrichting volgens een of meer van de conclusies 8 tot en met 13, omvattende een vacuümpomp (36) die is ingericht om een vacuüm aan te leggen in te hechtkamer (16).An apparatus according to any one of claims 8 to 13, comprising a vacuum pump (36) adapted to apply a vacuum to the bonding chamber (16). 15. Inrichting volgens een of meer van de conclusies 8 tot en met 14, omvattende twee koppen (22, 26), waarbij een kop (26) beweegbaar is in een verticale richting weg van en/of naar de andere kop (22).An apparatus according to any one of claims 8 to 14, comprising two heads (22, 26), one head (26) being movable in a vertical direction away from and/or towards the other head (22).
NL2030086A 2021-12-09 2021-12-09 Method and device for bonding of substrates with electromagnetic irradiation NL2030086B1 (en)

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