NL2029492A - Apparatus for determining a distance, method for determining a distance, and lithography system - Google Patents

Apparatus for determining a distance, method for determining a distance, and lithography system Download PDF

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Publication number
NL2029492A
NL2029492A NL2029492A NL2029492A NL2029492A NL 2029492 A NL2029492 A NL 2029492A NL 2029492 A NL2029492 A NL 2029492A NL 2029492 A NL2029492 A NL 2029492A NL 2029492 A NL2029492 A NL 2029492A
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resonant frequency
radiation
optical resonator
frequency
target
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NL2029492A
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Dutch (nl)
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NL2029492B1 (en
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Wald Matthias
Peschka Martin
Muenz Holger
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Zeiss Carl Smt Gmbh
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/026Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00Measuring instruments characterised by the use of optical techniques
    • G01B9/02Interferometers
    • G01B9/02001Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/02007Two or more frequencies or sources used for interferometric measurement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/15Cat eye, i.e. reflection always parallel to incoming beam
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/25Fabry-Perot in interferometer, e.g. etalon, cavity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/70Using polarization in the interferometer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Lasers (AREA)

Abstract

The invention relates to an apparatus (1) for determining a distance, comprising an optical resonator (2), Which has a plurality of resonant frequencies (3), and at least one radiation source (4), the spectrum of Which comprises at least one target resonant frequency (5) of the optical resonator (2). According to the invention, provision is made for an isolation device (6) to be provided in the beam path of the optical resonator (2), said isolation device isolating the target resonant frequency (5) on the basis of its polarization from other resonant frequencies (3) of the optical resonator (2).

Description

P131462NL00 Title: Apparatus for determining a distance, method for determining a distance, and lithography system This application claims priority to German Patent Application No. DE 10 2020 213 326.3 filed October 22, 2020 incorporated by reference herein in their entirety to form a part of the present disclosure.
The invention relates to an apparatus for determining a distance, comprising an optical resonator, which has a plurality of resonant frequencies, and at least one radiation source, the spectrum of which comprises at least one target resonant frequency of the optical resonator.
The invention further relates to a method for determining a distance, according to which a target resonant frequency of an optical resonator, which has a plurality of resonant frequencies, is determined by means of radiation from a radiation source which is coupled into the optical resonator and the spectrum of which comprises at least the target resonant frequency.
Furthermore, the invention relates to a lithography system, in particular a projection exposure apparatus for the semiconductor industry.
The functionality of systems used to guide and shape radiation is based to a particular extent on a correct positioning of individual components of the system in relation to one another.
A tolerable extent of a deviation between a sought-after relative position of the components in relation to one another or in relation to a reference point depends, inter alia, on a wavelength of the radiation to be guided and shaped.
In particular when use is made of EUV (extreme ultraviolet) radiation, only small deviations of the relative position of the components in relation to one another or in relation to a reference point are tolerated on account of the short wavelength of the EUV radiation.
In this context, it may be the case that deviations of only a few picometres are tolerable.
Determining a position very precisely may also be relevant for other technical fields.
Apparatuses and methods for determining a distance with such high demands on accuracy known from the prior art are based on frequency measurements since frequencies can be captured with great precision using measurement technology.
The prior art has disclosed the analysis of frequencies of radiation in an optical resonator for the purposes of measuring a distance on the basis of a frequency measurement. The optical resonator influences the frequencies of the radiation situated in the optical resonator depending on a resonator length. In particular, the optical resonator has eigenfrequencies or resonant frequencies, which are adopted by radiation situated in the resonator. In this context, the resonant frequencies are those frequencies which are come across virtually exclusively in an unimpeded optical resonator.
DE 10 2018 208 147 Al describes a measurement arrangement for the frequency-based determination of the position of a component.
DE 10 2019 201 146 A1 describes an interferometric measurement arrangement in an optical system.
The values of the resonant frequencies depend in particular on the resonator length. Therefore, information about the resonator length can be obtained by way of a suitable analysis of the resonant frequencies. This can realize a distance measurement.
For highly precise measurements, the use of a frequency comb is known from the prior art for analysing the resonant frequency.
However, the resonant frequencies of the optical resonator may also depend on other parameters than only the resonator length. In particular, it is known that resonant frequencies are dependent on a polarization and/or a form of spatial modes.
In this context, the dependence on additional parameters may lead to the formation of a fine structure. In this context, a single resonant frequency may be split into a plurality of resonant frequencies that under certain circumstances lie close to one another, at which radiation located in the optical resonator may be present.
In particular, a split of the resonant frequencies on account of birefringence at components of the optical resonator is known from practice.
Therefore, a disadvantage of the prior art is that other resonant frequencies located very close to the resonant frequency to be examined may make a measurement more difficult within the scope of determining the resonator length from a resonant frequency.
The present invention is based on the object of developing an apparatus for determining a distance, which avoids the disadvantages of the prior art and, in particular, facilitates a reliable determination of a target resonant frequency.
According to the invention, this object is achieved by an apparatus having the features mentioned in claim 1.
The present invention is further based on the object of developing a method for determining a distance, which avoids the disadvantages of the prior art and, in particular, reliably determines a target resonant frequency of the optical resonator.
According to the invention, this object is achieved by a method having the features mentioned in claim 25.
The present invention is further based on the object of developing a Lithography system, in particular a projection exposure apparatus, which avoids the disadvantages of the prior art and, in particular, facilitates reliable and exact positioning of components of the lithography system, in particular of the projection exposure apparatus, in relation to one another and in relation to at least one reference point.
According to the invention, this object is achieved by a lithography system, in particular a projection exposure apparatus, having the features mentioned in claim 45.
The apparatus according to the invention for determining a distance comprises an optical resonator, which has a plurality of resonant frequencies, and at least one radiation source. In this context, the spectrum of the radiation source comprises at least one target resonant frequency of the optical resonator. Further, provision is made for an isolation device to be provided in the beam path of the optical resonator, said isolation device isolating the target resonant frequency on the basis of the polarization from other resonant frequencies of the optical resonator.
The isolation of the target resonant frequency from in particular other resonant frequencies situated in the direct vicinity in the frequency domain, brought about by the isolation device, facilitates an advantageously accurate and reliable determination of the target resonant frequency, for example on account of an advantageously high signal-to-noise ratio.
In this case, in particular those resonant frequencies emerging from splitting from an original resonant frequency by birefringence at elements in the optical resonator are particularly close to the target resonant frequency in the frequency domain.
As a result, it is advantageous if a polarization direction is used as a selection parameter on the basis of which the target resonant frequency is isolated from other resonant frequencies.
The term optical resonator used in the context of the present invention should comprise all resonators for radiation, in particular for electromagnetic radiation. The reference to an optical resonator does not imply any restriction to, for example, light that is optically perceivable by humans. By way of example, the optical resonator can also be understood to be a microwave resonator.
In an advantageous development of the apparatus according to the invention, provision can be made for the at least one radiation source to be 5 tuneable.
A particularly efficient formation of radiation at the target resonant frequency in the optical resonator arises if use is made of a tuneable radiation source. The frequency of the radiation emerging from the radiation source can be set in the case of a tuneable radiation source. Thus, in particular, provision can be made for the frequency of the radiation source to be set to the target resonant frequency. Thus, under certain circumstances, the radiation present in the optical resonator may almost exclusively have a frequency that corresponds to the target resonant frequency.
In an advantageous development of the apparatus according to the invention, provision can be made for a control loop to be provided, the latter being configured to stabilize the tuneable radiation source, wherein the tuneable radiation source is able to be stabilized at the target resonant frequency. By stabilizing the tuneable radiation source at the target resonant frequency by means of a control loop the radiation can advantageously be output stably by the radiation source at a frequency that equals the target resonant frequency.
As a result of this, the radiation is almost exclusively present at the target resonant frequency. In particular, the frequency of the radiation can stably remain at the target resonant frequency over time as a result thereof. In this case, it is particularly advantageous if control loop and radiation source are configured in such a way that they are able to be stabilized at the target resonant frequency following the isolation of the target resonant frequency according to the invention. That is to say that the isolation device should preferably isolate the target resonant frequency to a sufficient extent from other resonant frequencies in order to facilitate the stabilization of the tuneable radiation source at the target resonant frequency.
Further, there is no need for a direct readout of the radiation in the optical resonator as a result of stabilizing the tuneable radiation source to the target resonant frequency; instead, the frequency to which the tuneable radiation source has been set can be used for determining the target resonant frequency since the tuneable radiation source is stabilized at the target resonant frequency.
In an advantageous development of the apparatus according to the invention, provision can be made for the control loop to be configured according to the Pound-Drever-Hall technique.
A configuration of the control loop according to the Pound-Drever- Hall technique offers the advantage of the Pound-Drever-Hall technique facilitating particularly efficient and reliable stabilization.
Alternatively, provision can be made of other stabilization methods according to which the control loop can be configured.
In an advantageous development of the apparatus according to the invention, provision can be made for at least a short pulse radiation source and a beat analysis device to be provided for determining a beat frequency of a superposition signal formed by the superposition of the radiation from the tuneable radiation source on short pulse radiation from the short pulse radiation source in order to determine the frequency of the radiation from the radiation source.
If the apparatus according to the invention has a short pulse radiation source, in particular a femtosecond laser for example, the short pulse radiation emanating from the short pulse radiation source can be superposed by radiation of the tuneable radiation source. The superposition signal arising as a result has a beat frequency, the analysis of which rendering it possible to determine the frequency of the radiation from the radiation source.
Sometimes, such a configuration of the apparatus according to the invention can be advantageous to form a frequency comb, by means of which 1t is possible to determine the resonator length particularly accurately.
In an advantageous development of the apparatus according to the invention, provision can be made for the optical resonator to have polarization eigenstates, which are adopted almost exclusively by the radiation at the respective resonant frequencies.
It is particularly advantageous if the optical resonator has polarization eigenstates. In a for example undisturbed optical resonator, radiation is almost exclusively present in one of the polarization eigenstates. In this case, the polarization eigenstates are clearly distinguishable or discrete. As a result, the isolation device can be designed in such a way, for example, that it isolates resonant frequencies from the target resonant frequency in accordance with the polarization eigenstates.
In an advantageous development of the apparatus according to the invention, provision can be made for the isolation device to separate the target resonant frequency from the other resonant frequencies.
Provision can be made for the isolation device to isolate the other resonant frequencies from the target resonant frequency by virtue of separating the other frequencies from the target resonant frequency in the frequency domain. This may mean that a frequency spacing between the target resonant frequency and the adjacent other resonant frequencies is increased. This can also be understood to be a shift of the target resonant frequency and the other resonant frequencies in relation to one another. In addition to such a separation of the resonant frequencies and the target resonant frequency, provision can also be made for the isolation device to isolate the target resonant frequency from the other resonant frequencies by virtue of the other resonant frequencies being suppressed. Thus, an isolation of the target resonant frequency from other resonant frequencies can also be achieved by virtue of the isolation device causing the optical resonator to be prevented from forming resonant frequencies which are located in such a vicinity of the target resonant frequency that a formation of the target resonant frequency would be impeded thereby.
In an advantageous development of the apparatus according to the invention, provision can be made for the isolation device to separate the target resonant frequency from the other resonant frequencies by at least one linewidth, preferably by at least twice the linewidth, of the target resonant frequency.
A separation of the target resonant frequency from the other resonant frequencies such that the target resonant frequency is separated from the other resonant frequencies by at least one linewidth, preferably by at least twice the linewidth, of the target resonant frequency is advantageous in that if line broadening of the target resonant frequency and/or the other adjacent resonant frequencies should occur, a clear distinction between the target resonant frequency and the other adjacent resonant frequencies is made possible. In general, a separation between the target resonant frequency and the other resonant frequencies that is as large as possible is advantageous.
In an advantageous development of the apparatus according to the invention, provision can be made for the isolation device to separate the target resonant frequency from the other resonant frequencies in such a way that a difference between the target resonant frequency and the other resonant frequencies is formed so as to be greater than a modulation frequency of the control loop.
If the difference between the target resonant frequency and the other resonant frequencies is advantageously greater than the modulation frequency of the control loop, it is possible, particularly in the case where the control loop is configured according to the Pound-Drever-Hall technique,
to avoid that an adjacent resonant frequency influences an error signal of the control loop by virtue of having the same frequency as the target resonant frequency added with the modulation frequency of the control loop. At the frequency arising from the addition of the target resonant frequency and the modulation frequency, the control loop or the error signal of the control loop may react particularly sensitively to the occurrence of another resonant frequency.
It is particularly advantageous for the difference to be greater than
1.5-times the modulation frequency of the control loop.
In an advantageous development of the apparatus according to the invention, provision can be made for the isolation device to separate the target resonant frequency from the other resonant frequencies in such a way that a difference between the target resonant frequency and the other resonant frequencies corresponds at least approximately to a difference between adjacent resonant frequencies of spatial modes of radiation in the polarization eigenstate of the target resonant frequency.
The isolation device preferably operates by way of birefringence. This birefringence of the isolation device is preferably chosen to be so great that the frequency difference of the polarization eigenmodes is not only greater than a Fabry-Perot resonance width but also greater than the Pound-Drever-Hall modulation frequency. In particular, the frequency difference should preferably be greater than the Pound-Drever-Hall modulation frequency including a certain factor of for example 1.5 or greater in order to take account of the outwardly falling edges of the Pound-Drever- Hall error signal. In the case of a frequency modulation, further sidebands may moreover occur at multiples of the Pound-Drever-Hall modulation frequency, and so a greater frequency difference should optionally be chosen. Advantageously, interferences in the measurement signal by coupling to the second polarization eigenmode can be suppressed in this way.
A formula-based description of the described circumstances arises from the following: For a resonator length L, the free spectral range of the optical resonator is given by Formula (1), where c denotes the speed of light.
FSR = — (1) A resonance width of the resonant frequencies is linked to the free spectral range FSR by way of the finesse F. Formula (2) represents these circumstances.
- _ E58 ) ewes TTL (2) The birefringence 6 (measured in radians) leads to a frequency difference between the eigenstates or a frequency difference between the resonant frequencies. This frequency difference A is given by Formula (3). a= Ltrs == (3) So that the resonant frequencies are spaced apart by at least one linewidth 6, the relationship specified in Formula (4) must therefore apply. & = Iggy (4) Formula (5) arises from inserting Formulae (1), (2) and (3) into Formula (4).
It is particularly preferred if the frequency difference A is greater than the Pound-Drever-Hall frequency frou. To satisfy this condition it is necessary for the condition formulated in Formula (6) to be satisfied.
FSE > frow (6) It is particularly advantageous if the condition formulated in Formula (7) is satisfied, wherein the aforementioned factor of 1.5 or greater is included.
FSR > LS fgg (7) In a case where the isolation device leads to a linear birefringence the polarization eigenstates of the radiation in the optical resonator are likewise linear. However, in a general case, provision can be made for the polarization eigenstates to be circular and/or elliptical.
In an advantageous development of the apparatus according to the invention, provision can be made for the isolation device to separate the target resonant frequency from the other resonant frequencies in such a way that a difference between the target resonant frequency and the other resonant frequencies corresponds at least approximately to a difference between adjacent resonant frequencies of spatial modes of radiation in the polarization eigenstate of the target resonant frequency.
If the radiation in the optical resonator has different spatial modes, resonant frequencies can, apart from on the basis of the polarization, also be split on the basis of the respective spatial mode, which in turn leads to a fine structure.
It is advantageous if the isolation device separates the target resonant frequency from the other resonant frequencies in such a way that the separation corresponds at least approximately to a frequency spacing of resonant frequencies adjacent to the target resonant frequency, which separation arises from splitting a resonant frequency with a certain polarization eigenstate into the target resonant frequency and other resonant frequencies of other spatial modes. That is to say, the target resonant frequency is separated in such a way that the adjacent and interfering resonant frequency of a different polarization direction falls on a resonant frequency of a higher spatial mode of the target resonant frequency.
Such a shift is advantageous in that another adjacent resonant frequency shifted in that way only has a very small interaction with the target resonant frequency on account of the orthogonality of the spatial modes.
In an advantageous development of the apparatus according to the invention, provision can be made for the beat analysis device to have a frequency standard embodied as a gas cell.
To determine an absolute frequency, provision can be made for the beat analysis device to have a frequency standard. In this case, the use of a gas cell as frequency standard is particularly advantageous since gas cells facilitate the definition of a clear frequency line in a technically known and stable and hence reliable manner.
In an advantageous development of the apparatus according to the invention, provision can be made for the optical resonator to have at least one stationary resonator mirror and at least one deflection mirror.
In this case, the deflection mirror is set up to deflect or divert the radiation in the optical resonator.
By way of example, this can realize folded resonators.
By way of example, a resonator folded into a V-configuration can be realized by virtue of the radiation emanating from a first stationary resonator mirror striking a plane deflection mirror and being deflected by the latter in the direction of a second stationary resonator mirror. Following this, the radiation reflected by the second stationary resonator mirror is deflected, in turn, by the deflection mirror to the first stationary resonator mirror.
Provision can also be made for only one resonator mirror from which the radiation emanates to be provided, wherein the at least one deflection mirror reflects the radiation in its direction of incidence and casts it back to the resonator mirror. As a result of this, 1t 1s possible, for example, for the optical resonator to maintain its functionality even in the case of slight variations in the angles from the direction of the resonator mirror and the at least one deflection mirror in relation to one another.
In particular, provision can be made for the optical resonator to be formed by a stationary resonator mirror in the form of a concave mirror and a first deflection mirror and a second, plane deflection mirror. In this case, the optical resonator cavity is formed by the resonator mirror and the plane mirror.
The use of a deflection mirror further offers the advantage of being able to vary a position of the deflection mirror, and hence the resonator length.
In an advantageous development of the apparatus according to the invention, provision can be made for the optical resonator to have a first stationary resonator mirror and a second stationary resonator mirror and at least one deflection mirror.
If the optical resonator has a first and a second stationary resonator mirror and the radiation situated in the optical resonator is reflected between the resonator mirrors by at least one deflection mirror, it is thus possible, for example, to advantageously vary a resonator length by changing the position of the deflection mirror.
In this case, the use of a deflection mirror is particularly advantageous if the deflection mirror is embodied in such a way that it always casts incident light back in the direction of the incidence, and consequently ensures the stability of the optical resonator.
In an advantageous development of the apparatus according to the invention, provision can be made for the isolation device to be embodied as a polarization-dependent retardation element.
A particularly advantageous and efficient way of isolating, in particular separating, the target resonant frequency from other resonant frequencies may lie in the use of a polarization-dependent retardation element as an isolation device. If the speed of propagation of radiation within the optical resonator is retarded on the basis of its polarization direction by the isolation device, a lower resonant frequency arises for the radiation retarded in this way on account of an increased circulation time through the optical resonator.
It is particularly advantageous in this case if the retardation element is formed from a birefringent material since a birefringent material leads to a polarization-dependent retardation of radiation passing through the material. This increases a circulation duration in the optical resonator of the radiation in one of the polarization eigenstates, as a result of which the frequency of the radiation is reduced.
In an advantageous development of the apparatus according to the invention, provision can be made for the retardation element to be embodied as a retardation coating on the deflection mirror.
A particularly advantageously implementable type of embodiment of the retardation element can be formed by a coating of the deflection mirror of the optical resonator, said coating being formed from a plurality of layers in such a way that the relative phase of reflected radiation that is s- polarized in relation to a plane of incidence and of reflected radiation that is p-polarized in relation to the plane of incidence is adjustable by way of a suitable choice of the layer thickness values and the refractive indices.
This can achieve a polarization-dependent retardation effect without the addition of further components and can hence achieve an isolation of the target resonant frequency from other resonant frequencies.
A retarding effect of an individual mirror in a corner reflector of a phase difference of 180°, which corresponds to metallic reflection, leads to an overall retardation of the corner reflector of 0°.
It can be shown that the overall retardation of the corner reflector about this zero has a gradient of Wim ZS A necessary mirror phase difference as per Formulae (1) to (7) for a desired overall retardation can consequently be calculated easily.
A suitable choice of the layer thickness levels, of the material, in particular of the refractive indices, and of the number of layers for obtaining a mirror phase difference required for a desired overall retardation can be ascertained therefrom.
Preferably, a deflection mirror, in particular a corner reflector, is linearly birefringent when passed through twice in the case of an overall retardation unequal to zero such that the polarization eigenstates are linear polarization eigenstates.
An overall retardation arises from the retardation experienced by the radiation in the case of a complete circulation through the optical resonator.
If a plurality of spatial modes build up, these circumstances can likewise be expressed in formulae.
The resonant frequencies of adjacent spatial modes for an optical resonator, which is formed for example from a plane mirror and a curved mirror and optional further folding mirrors, differ by a fraction of the free spectral range FSR. In the example shown in Figure 9, this fraction is slightly more than one fifth of the free spectral range FSR.
Using this, a required retardation can be calculated from a radius of the resonator mirror R and the resonator length L. A formula can also be specified for a general case of two curved resonator mirrors.
In an advantageous development of the apparatus according to the invention, provision can be made for the retardation element to be embodied as a retardation plate. As an alternative and/or in addition thereto, provision can be made for a retardation plate to be arranged in the optical resonator as a retardation element or isolation device in order to isolate the target resonant frequency from other resonant frequencies in polarization- dependent fashion. In an advantageous development of the apparatus according to the invention, provision can be made for the tuneable radiation source to have a polarization that corresponds to one of the polarization eigenstates. If the radiation formed by the tuneable radiation source and brought into the optical resonator has one of the polarization eigenstates of the optical resonator, radiation at the target resonant frequency can be brought from the tuneable radiation source into the optical resonator, said radiation having a polarization direction that is particularly stable in the optical resonator. This avoids the optical resonator being operated in a different polarization to a polarization eigenstate.
In an advantageous development of the apparatus according to the invention, provision can be made for the target resonant frequency to be the lowest resonant frequency.
Selecting the target resonant frequency from the resonant frequencies of the optical resonator in such a way that the target resonant frequency is the lowest resonant frequency is advantageous in that the lowest resonant frequency represents a fundamental frequency of the optical resonator. The radiation situated in the optical resonator can adopt the fundamental frequency in particularly stable fashion.
In an advantageous development of the apparatus according to the invention, provision can be made for the at least one deflection mirror to be arranged and/or embodied such that an angle of incidence of the radiation on reflecting surfaces of the deflection mirror is greater than 0°, preferably greater than 10°, particularly preferably greater than 20°. Preferably, the at least one deflection mirror is arranged and/or embodied such that the angle of incidence of the radiation on reflecting surfaces of the deflection mirror is less than 80°.
Such a configuration can be particularly suitable for individual plane deflection mirrors.
By way of example, if the deflection mirror is embodied as a corner reflector, an angle of incidence of 53° to 58°, in particular 54.7°, in relation to the surface normal of the reflecting surfaces can be particularly advantageous as this corresponds to an incidence that is at least approximately parallel to an axis of symmetry of the corner reflector.
Even if the deflection mirror is embodied as a corner reflector, provision can be made in specific embodiments for the deflection mirror to be arranged and/or embodied such that the angle of incidence in relation to at least one surface normal of a reflecting surface is less than 53° or greater than 58°, in particular lies within the aforementioned value ranges of the plane deflection mirror, since this facilitates a positioning of the deflection mirror at a multiplicity of angles in relation to the direction of propagation of the radiation.
An angle of incidence of the radiation in relation to the mirror normal which is greater than zero is advantageous in that an optical path length is increased by a retardation coating possibly arranged on the mirror or deflection mirror.
This can advantageously reinforce a retarding effect of the retardation coating and consequently reinforce the separation of the resonant frequencies.
In an advantageous development of the apparatus according to the invention, provision can be made for the at least one deflection mirror to be embodied as a corner-reflector reflector and/or as a corner cube and/or as a cat's eye mirror.
If the deflection mirror is formed in the aforementioned way, it is possible to resort to known efficient and reliable embodiments of the deflection mirror. As a result, the apparatus according to the invention can advantageously be designed simply.
In an advantageous development of the apparatus according to the invention, provision can be made for the polarization of the target resonant frequency to be the polarization for which the optical resonator has the greatest finesse and/or reflectivity.
If the target resonant frequency is chosen as the resonant frequency for the polarization of which the optical resonator has the greatest finesse and/or reflectivity, an advantageously small linewidth arises for the radiation at the target resonant frequency, as a result of which an isolation of the target resonant frequency from other resonant frequencies is advantageously possible in a simple manner. As a result, a stabilization of the frequency of the radiated-in light at the target resonant frequency can be implemented very accurately and precisely in turn.
Further, it may be advantageous to operate the optical resonator at that resonant frequency for which an overall reflectivity, and hence the finesse, is highest. For a deflection mirror or corner reflector and reflectivity values of the resonator mirrors and the deflection mirrors which have a value of at least approximately 1, an overall reflectivity of the polarization eigenstates 1s given by Formulae (8) and (9). Formula (8) describes the overall reflectivity of a first polarization eigenstate.
Formula (9) describes the overall reflectivity of a second polarization eigenstate.
In this case, the overall polarization of the first eigenmode depends on the reflectivity of the mirrors in s-polarization (Rs) and the reflectivity in p-polarization (Rp). In particular, a dielectric mirror usually has a significantly higher reflectivity in the s-polarization than a p-polarization.
Advantageously, optical resonators in many different geometries therefore have an optical path length which is longer for s-polarized radiation than for p-polarized radiation. Such a behaviour is counter to the usual behaviour of a dielectric mirror. However, a dielectric mirror is only optimized for a maximum reflectivity. Nevertheless, such a behaviour can be achieved by a suitable layer design.
In an advantageous development of the apparatus according to the invention, provision can be made for the polarization of the target resonant frequency to be the polarization for which the optical resonator has the greatest reflectivity and the longest optical path length.
Such a configuration is advantageous in that the radiation at the target resonant frequency has an advantageously small linewidth. The long optical path length yields an advantageously low resonant frequency and/or an advantageously pronounced and efficient isolation of the target resonant frequency from other resonant frequencies of the optical resonator.
In an advantageous development of the apparatus according to the invention, provision can be made for at least one part of the optical resonator to be arranged at a component, the distance of which from a reference point should be determined.
To determine a distance, the apparatus according to the invention can be used particularly advantageously if a part of the optical resonator is physically connected to a component, for example a projection exposure apparatus, in order to determine the distance thereof from another component or a reference point. Below, reference is made to a reference point which might also be a different component, for example. A resonator length and hence a value of a target resonant frequency can be defined by a position of the component or the distance thereof from a reference point. If the resonator length corresponds to the distance of the component from the reference point, the distance of the component from the reference point can be determined by determining the resonant frequency. In particular, provision can be made for a distance of the component from a reference point to be determined, with the reference point being an initial position of the component. Thus, in particular, it is possible to detect a change in the resonator length and hence a change in the distance. This advantageously facilitates an attainment of the determination of a distance from an initial point.
In an advantageous development of the apparatus according to the invention, provision can be made for the deflection mirror of the optical resonator to be arranged at the component.
If the deflection mirror of the optical resonator is arranged on the component, this is advantageous, in particular, in that the positions of inclination-sensitive elements of the resonator mirror can remain stationary while the deflection mirror changes its position with the component. Since the deflection mirror casts the light back into the incident direction, the optical resonator can be operated stably even in the case of a shift and a change in the position of the component.
A particularly preferred development of the apparatus according to the invention can consist of the optical resonator having a first stationary resonator mirror, a second stationary resonator mirror, a first deflection mirror which is embodied as a plane mirror and a second, stationary deflection mirror which is embodied as a corner reflector.
Here, provision can be made for the resonator mirrors, the plane mirror and the corner reflector to be arranged in such a way that the radiation emanating from the first resonator mirror is steered from the plane mirror to the corner reflector. Following this, the radiation is cast back with a spatial offset in its direction of incidence by the corner reflector and steered onto the second resonator mirror by the plane mirror.
Such a configuration is also referred to as double folded cavity and has the advantage of a compact structure with a high stability at the same time. The great stability arises from the fact that the corner reflector always casts the radiation back to the second resonator mirror for as long as the radiation emanating from the first resonator mirror strikes the first deflection mirror.
In this case, it can be particularly advantageous if the first, plane deflection mirror is arranged at the component. Advantageously, the first, plane deflection mirror can have a simple structure and can, in the case of a low weight and a small size, represent a small load on the component.
The invention further relates to a method for determining a distance according to the preamble of Claim 25.
The method according to the invention for determining a distance provides for a target resonant frequency of an optical resonator, which has a plurality of resonant frequencies, to be determined by means of radiation from a radiation source which is coupled into the optical resonator and the spectrum of which comprises at least the target resonant frequency. The method according to the invention provides for the target resonant frequency to be isolated on the basis of its polarization from other resonant frequencies of the optical resonator.
The method according to the invention facilitates an accurate and reliable determination of a resonator length by virtue of determining a target resonant frequency. According to the invention, the target resonant frequency is advantageously determined accurately and reliably by virtue of the target resonant frequency being isolated from other resonant frequencies. As a result of isolating the target resonant frequency from the other resonant frequencies according to the invention, the signal-to-noise ratio with which the target resonant frequency can be determined, for example, is improved.
In an advantageous development of the method according to the invention, provision can be made for the radiation to be formed by a tuneable radiation source.
If the radiation situated in the optical resonator is formed by a tuneable radiation source, it is possible to form the radiation at the target resonant frequency. This advantageously reduces the formation of frequencies of the radiation which are not at the target resonant frequency in the optical resonator.
In an advantageous development of the method according to the invention, provision can be made for radiation at the target resonant frequency to be radiated into the optical resonator and stabilized at the target resonant frequency by means of a control loop which is configured to stabilize the tuneable radiation source.
Stabilizing the tuneable radiation source at the target resonant frequency of the optical resonator means that the control loop sets the tuneable radiation source in such a way that the latter emits radiation at a frequency corresponding to the target resonant frequency. Furthermore, should the frequency of the radiation emitted by the radiation source deviate from the target resonant frequency, the control loop causes the radiation source to be set in such a way that the frequency of the emitted radiation corresponds to the target resonant frequency again. Advantageously, the frequency to which the control loop sets the tuneable radiation source can be used to determine the target resonant frequency as a result thereof.
In an advantageous development of the method according to the invention, provision can be made for the control loop to be operated according to the Pound-Drever-Hall technique.
Operating the control loop according to the Pound-Drever-Hall technique facilitates a reliable and fast stabilization of the tuneable radiation source at the target resonant frequency.
In an advantageous development of the method according to the invention, provision can be made for the radiation from the tuneable radiation source to be superposed on short pulse radiation from a short pulse radiation source and a beat frequency of a superposition signal formed thereby to be determined by means of the beat analysis device.
The target resonant frequency can be determined particularly accurately and reliably by virtue of radiation of the tuneable radiation source that has been stabilized at the target resonant frequency being superposed with short pulse radiation. By superposing the radiation of the tuneable radiation source on the short pulse radiation a superposition signal with a beat frequency arises. Analysing the beat frequency facilitates very accurate determination of the target resonant frequency in the case of a suitable choice of the parameters pulse duration and pulse frequency of the short pulse radiation source in comparison with the target frequency. The resonator length, for example, can also be determined very accurately by way of a very accurate determination of the target resonant frequency.
In an advantageous development of the method according to the invention, provision can be made for the beat frequency of the superposition signal to be determined by means of a beat analysis device which has a frequency standard preferably embodied as a gas cell.
An analysis of the beat frequency by means of a beat analysis device having a frequency standard is particularly preferred. By way of a frequency standard it is possible to determine an absolute target resonant frequency and hence an absolute resonator length.
In this case, gas cells are an advantageous realization for a frequency standard as they are simple and robust.
In other embodiments, the frequency standard can also be embodied as an optical resonator which is stabilized by means of a GPS (global positioning system) signal.
In an advantageous development of the method according to the invention, provision can be made for the radiation at the resonant frequencies to be present almost exclusively in polarization eigenstates of the optical resonator.
If the radiation in the optical resonator at the resonant frequencies 1s almost exclusively present in the polarization eigenstates, i.e., if the optical resonator is not operated outside of its polarization eigenstates, the radiation is present in discrete and distinguishable polarization states. As a result, an isolation according to the invention of the target resonant frequency from other resonant frequencies on the basis of the polarization of the radiation can be implemented particularly easily.
Thus, in particular, it is necessary to isolate discrete and distinguishable resonant peaks in a resonant spectrum from the target resonant frequency.
In an advantageous development of the method according to the invention, provision can be made for the target resonant frequency to be separated from the other resonant frequencies.
A separation of the target resonant frequency from the other resonant frequencies, i.e., a shift of the target resonant frequency in relation to the other resonant frequencies in a frequency domain represents an advantageous manner of isolation since it is not necessary to intervene, for example in absorptive fashion, in the optical resonator but the resonant frequency only needs to be shifted by means of suitable measures.
In particular, frequency-dependent low-pass filters with an edge profile that would be necessary and/or suitable for isolating the target resonant frequency from the other resonant frequencies of the optical resonator are very difficult to produce.
In an advantageous development of the method according to the invention, provision can be made for the target resonant frequency to be separated from the other resonant frequencies by at least one linewidth, preferably by at least twice the linewidth, of the target resonant frequency.
A separation of the target resonant frequency from the other resonant frequencies by at least one linewidth, preferably at least twice the linewidth, of the target resonant frequency and/or the other resonant frequencies is advantageous in this case in that a determination of the target resonant frequency becomes more accurate, the further the other resonant frequencies are separated therefrom.
In this case, an advantageous lower limit for separation is represented by the linewidth of the target resonant frequency or of the adjacent other resonant frequencies. In particular, provision can be made for the greatest linewidth observed among the adjacent resonant frequencies to be used as a lower limit for a separation of the target resonant frequency from other resonant frequencies.
This ensures that, for example as a result of the control loop, components of other resonant frequencies are no longer able to impede the determination of the target resonant frequency in appreciable fashion.
In an advantageous development of the method according to the invention, provision can be made for the target resonant frequency to be separated from the other resonant frequencies in such a way that a difference between the target resonant frequency and the other resonant frequencies is formed so as to be greater than a modulation frequency of the control loop.
If the target resonant frequency is separated from the other resonant frequencies by at least the modulation frequency of the control loop, incorrect influencing of the signal of the control loop by adjacent resonant frequencies can be reduced.
In particular, provision can be made for the difference between the target resonant frequency and the other resonant frequencies to be greater than or equal to 1.5-times the modulation frequency of the control loop. This can additionally prevent, for example in the case of a Pound-Drever-Hall technique, the other resonant frequency adjacent to the target resonant frequency from influencing a zero of the error signal of the Pound-Drever- Hall control loop at the modulation frequency.
Further, provision can be made for the difference between the target resonant frequency and the other resonant frequencies to be greater than or equal to the sum of the modulation frequency of the control loop and a linewidth, in particular a maximum linewidth, of the target resonant frequency and/or the other resonant frequencies.
In an advantageous development of the method according to the invention, provision can be made for the target resonant frequency to be separated from the other resonant frequencies in such a way that a difference between the target resonant frequency and the other resonant frequencies corresponds at least approximately to a difference between adjacent resonant frequencies of spatial modes of radiation in the polarization eigenstate of the target resonant frequency of the optical resonator.
A shift or separation of the target resonant frequency in relation to the other resonant frequencies such that the closest adjacent other resonant frequency comes to rest on the resonant frequency of a higher mode of the target resonant frequency with the same polarization has the advantage that this minimizes influencing of the target resonant frequency by the adjacent other resonant frequency since the higher spatial modes are orthogonal to one another.
In an advantageous development of the method according to the invention, provision can be made for a distance of a deflection mirror from at least one stationary resonator mirror to be determined.
Determining the distance between the deflection mirror and the at least one stationary resonator mirror can be implemented in this case by determining the resonator length. If the optical resonator consists only of a stationary resonator mirror and the deflection mirror, the distance between the deflection mirror and the stationary resonator mirror is given by half the resonator length.
In an advantageous development of the method according to the invention, provision can be made for a distance of a deflection mirror from a first stationary resonator mirror and/or a second stationary resonator mirror to be determined.
As a result, a distance measurement between the deflection mirror and a resonator mirror can be advantageously translated into a measurement of the resonator length.
In an advantageous development of the method according to the invention, provision can be made for the target resonant frequency to be isolated from other resonant frequencies of the optical resonator by a retardation element.
The target resonant frequency can be isolated from other resonant frequencies of the optical resonator by a retardation element. In this case, the retardation element causes radiation in the optical resonator to be decelerated depending on the polarization direction. As a result, depending on its polarization, some of the radiation requires a longer time for circulation in the optical resonator and therefore has a lower frequency. In particular, provision can be made here for the target resonant frequency to be reduced in comparison with the other resonant frequencies by virtue of a retardation element decelerating the radiation which is at the target resonant frequency with a certain polarization.
As a result, an isolation according to the invention of the target resonant frequency from other frequencies can be achieved in advantageous fashion.
In an advantageous development of the method according to the invention, provision can be made for the radiation to be coupled into the optical resonator with a polarization corresponding to one of the polarization eigenstates.
Input coupling radiation with a polarization corresponding to one of the polarization eigenstates of the optical resonator is particularly advantageous; it is especially advantageous if this is the polarization eigenstate which the target frequency should have. What this can advantageously bring about is that almost exclusively radiation at the target resonant frequency in the desired polarization eigenstate is present in the optical resonator. As a result, other resonant frequencies build up only to a small extent, preferably not at all.
In an advantageous development of the method according to the invention, provision can be made for radiation at the lowest resonant frequency to be coupled into the optical resonator.
The lowest resonant frequency is the fundamental frequency of the optical resonator. Coupling in radiation at the lowest resonant frequency is therefore advantageous in that the fundamental mode or the fundamental frequency builds up most strongly in the optical resonator.
In an advantageous development of the method according to the invention, provision can be made for a distance of the deflection mirror from at least one of the resonator mirrors to be determined from the target resonant frequency, according to which the target resonant frequency is determined from the frequency of the radiation radiated into the optical resonator by the tuneable radiation source that has been stabilized at the target resonant frequency.
Determining a distance, for example from the deflection mirror to one of the resonator mirrors, can advantageously be implemented directly from a measurement of the target resonant frequency in that case. The target resonant frequency itself can advantageously be determined by reading the frequency at which the tuneable radiation source has been stabilized by the control loop.
In an advantageous development of the method according to the invention, provision can be made for radiation in the optical resonator to strike the at least one deflection mirror at an angle of incidence that is greater than 0°, preferably greater than 10°, particularly preferably greater than 20°. Preferably, the at least one deflection mirror is arranged and/or embodied such that the angle of incidence of the radiation on reflecting surfaces of the deflection mirror is less than 80°.
Along optical path length, which is caused by a large angle with respect to the surface normal, is advantageous in that an effect on the radiation by a coating, for example a coating of the deflection mirror, that acts as a retardation element is maximized. This can advantageously reduce, e.g., a coating thickness of the deflection mirror, which may lead to lower costs of the deflection mirror under certain circumstances.
In an advantageous development of the method according to the 1nvention, provision can be made for at least one distance of a component from a reference point to be determined, wherein at least a part of the optical resonator is arranged at the component.
A distance of a component, for example of a projection exposure apparatus, from a reference point can be determined particularly accurately and precisely by the method according to the invention. This applies in particular if at least one part of the optical resonator is arranged at the component. In this case, a change in the position of the component leads to a change in the resonator length and hence to a change in the target resonant frequency. As a result, measuring the target resonant frequency allows conclusions to be drawn about a change in the distance of a component from a reference point. In particular, an absolute distance of the component from the reference point can be determined in the case of an absolute length measurement.
In an advantageous development of the method according to the invention, provision can be made for the part of the optical resonator arranged at the component to be the deflection mirror.
It is particularly advantageous if the deflection mirror as part of the optical resonator is arranged at the component since the deflection mirror casts incident light back in the direction of incidence, as a result of which the optical resonator can be operated particularly stably.
The invention further relates to a lithography system, in particular a projection exposure apparatus.
The lithography system according to the invention, in particular a projection exposure apparatus for the semiconductor industry, has at least one component, in particular an optical element, particularly preferably a mirror. According to the invention, provision is made for at least one actual position of at least one of the components to be determined by means of the apparatus according to the invention and/or by means of the method according to the invention by virtue of determining a distance of the component from a reference point.
The lithography system according to the invention, in particular the projection exposure apparatus for the semiconductor industry, is particularly suitable for producing semiconductor structures by means of EUV light. By applying the apparatus according to the invention and/or the method according to the invention for the purposes of positioning components, in particular mirrors in relation to one another and/or in relation to a desired imaging plane, the lithography system according to the invention can advantageously be used to produce fine and precise semiconductor structures.
An advantageous development of the lithography system according to the invention can consist in that an adjustment device 1s provided for bringing the actual position of at least one of the components closer to at least one target position.
The adjustment device can calculate or correct the at least one distance from a target position on the basis of the actual position ascertained by means of the apparatus according to the invention or the method according to the invention. Alternatively, provision can likewise be made for the adjustment device to determine or correct the target position by virtue of adding a certain displacement length to the actual position.
The lithography system according to the invention, in particular the projection exposure apparatus for the semiconductor industry, which has at least one component, in particular an optical element, particularly preferably a mirror, can alternatively be characterized in that an apparatus according to the invention is provided which determines a distance of at least one of the components from a reference point as an actual position of the component.
Features described in conjunction with one of the subjects of the invention, specifically given by the apparatus according to the invention, the method according to the invention and the lithography system according to the invention, are also advantageously implementable for the other subjects of the invention.
Advantages specified in conjunction with one of the subjects of the invention, specifically given by the apparatus according to the invention, the method according to the invention and the lithography system according to the invention, can also be understood to relate to the other subjects of the invention.
It should supplementarily be pointed out that terms such as "comprising", “having” or "with" do not exclude other features or steps.
Furthermore, terms such as "a()" or "the" which indicate single steps or features do not preclude a plurality of features or steps - and vice versa.
Exemplary embodiments of the invention are described in greater detail below with reference to the drawing.
The figures in each case show preferred exemplary embodiments in which individual features of the present invention are illustrated in combination with one another.
Features of an exemplary embodiment are also able to be implemented independently of the other features of the same exemplary embodiment, and may readily be combined accordingly by a person skilled in the art to form further expedient combinations and sub- combinations with features of other exemplary embodiments.
In the figures, functionally identical elements are provided with the same reference signs.
Figure 1 shows an EUV projection exposure apparatus; Figure 2 shows a DUV projection exposure apparatus;
Figure 3a shows a basic illustration of an apparatus for determining a distance; Figure 3b shows a basic illustration of a double folded optical resonator; Figure 4 shows a very approximate basic illustration of a spectrum of resonant frequencies of the optical resonator; Figure 5 shows a further very approximate basic illustration of the spectrum of resonant frequencies of the optical resonator; Figure 6 shows a basic illustration of a Pound-Drever-Hall error signal; Figure 7 shows a basic illustration of a Pound-Drever-Hall error signal with higher spatial modes; Figure 8 shows a further basic illustration of a Pound-Drever-Hall error signal; and Figure 9 shows a basic illustration of a retardation.
Figure 1 shows by way of example the basic set-up of a lithography system or of an EUV projection exposure apparatus 400 for semiconductor lithography for which the invention can preferably find application. In particular, the invention can find application by virtue of at least one actual position of at least one component 102, 103, 104, 105, 106, 107, 108, 109, 140, 401, 402, 403, 406, 407, 408, 411, 412, 415, 416, 417, 418, 419, 420, preferably an optical element 18, 19, 20, 415, 416, 418, 419, 420, 108, particularly preferably a mirror, being determined by means of an apparatus according to any one of Claims 1 to 24 and/or by means of a method according to any one of Claims 25 to 44 by virtue of determining a distance of the component from a reference point or from another component.
An illumination system 401 of the projection exposure apparatus 400 comprises, besides a radiation source 402, an optical unit 403 for the illumination of an object field 404 in an object plane 405. A reticle 406 arranged in the object field 404 is illuminated, said reticle being held by a reticle holder 407, illustrated schematically. A projection optical unit 408, illustrated merely schematically, serves for imaging the object field 404 into an image field 409 in an image plane 410. A structure on the reticle 406 is imaged on a light-sensitive layer of a wafer 411 arranged in the region of the image field 409 in the image plane 410, said wafer being held by a wafer holder 412 that 1s likewise illustrated in part.
The radiation source 402 can emit EUV radiation 413, in particular in the range of between 5 nanometres and 30 nanometres, in particular
13.5 nm. Optically differently designed and mechanically adjustable optical elements are used for controlling the radiation path of the EUV radiation
413. In the case of the EUV projection exposure apparatus 400 illustrated in Figure 1, the optical elements are embodied as adjustable mirrors in suitable embodiments, which are mentioned merely by way of example below.
The EUV radiation 413 generated by means of the radiation source 402 is aligned by means of a collector integrated in the radiation source 402 in such a way that the EUV radiation 413 passes through an intermediate focus in the region of an intermediate focal plane 414 before the EUV radiation 413 impinges on a field facet mirror 415. Downstream of the field facet mirror 415, the EUV radiation 413 is reflected by a pupil facet mirror
416. With the aid of the pupil facet mirror 416 and an optical assembly 417 having mirrors 418, 419, 420, field facets of the field facet mirror 415 are imaged into the object field 404.
Figure 2 illustrates an exemplary DUV projection exposure apparatus 100. The projection exposure apparatus 100 comprises an illumination system 103, a device known as a reticle stage 104 for receiving and exactly positioning a reticle 105, by which the later structures on a wafer 102 are determined, a wafer holder 106 for holding, moving and exactly positioning the wafer 102 and an imaging device, to be specific a projection lens 107, with a plurality of optical elements 108, which are held by way of mounts 109 in a lens housing 140 of the projection lens 107.
The optical elements 108 can be designed as individual refractive, diffractive and/or reflective optical elements 108, such as for example lens elements, mirrors, prisms, terminating plates and the like.
The basic functional principle of the projection exposure apparatus 100 provides for the structures introduced into the reticle 105 to be imaged onto the wafer 102.
The illumination system 103 provides a projection beam 111 in the form of electromagnetic radiation, which is required for the imaging of the reticle 105 on the wafer 102. A laser, a plasma source or the like can be used as the source of this radiation. The radiation is shaped in the illumination system 103 by means of optical elements such that the projection beam 111 has the desired properties with regard to diameter, polarization, shape of the wavefront and the like when it is incident on the reticle 105.
An image of the reticle 105 is generated by means of the projection beam 111 and transferred from the projection lens 107 to the wafer 102 in an appropriately reduced form. In this case, the reticle 105 and the wafer 102 can be moved synchronously, so that regions of the reticle 105 are 1maged onto corresponding regions of the wafer 102 virtually continuously during a so-called scanning process.
An air gap between the last optical element 108 or the last lens element and the wafer 102 can be replaced by a liquid medium having a refractive index of > 1. The liquid medium can be high-purity water, for example. Such a set-up is also referred to as immersion lithography and has an increased photolithographic resolution.
Figure 3a shows a basic illustration of an apparatus 1 for determining a distance, comprising an optical resonator 2 having a multiplicity of resonant frequencies 3. The apparatus 1 further comprises at least one radiation source 4, the spectrum of which comprises at least one target resonant frequency 5 of the optical resonator 2. An isolation device 6 is provided in the beam path of the optical resonator 2, said isolation device isolating the target resonant frequency 5 on the basis of its polarization from other resonant frequencies 3 of the optical resonator 2 (see Figure 4). The radiation source 4 is tuneable in the present exemplary embodiment.
In the exemplary embodiment of the apparatus 1 illustrated in Figure 3a, provision is further made of a control loop 7 which is configured to stabilize the tuneable radiation source 4. In this case, the tuneable radiation source 4 is able to be stabilized at the target resonant frequency 5 or is stabilized at the target resonant frequency.
Some of the radiation reflected back from the optical resonator 2 is taken by means of a taking device 7a and analysed by means of a resonator radiation analysis device (not illustrated) for example belonging to the control loop 7.
Further, the control loop 7 in the present exemplary embodiment is configured according to the Pound-Drever-Hall technique.
The apparatus illustrated in the exemplary embodiment as per Figure 3a further comprises a short pulse radiation source 8 and a beat analysis device 9 for determining a beat frequency of a superposition signal which is formed by superposing short pulse radiation from the short pulse radiation source 8 on radiation of the tuneable radiation source 4. This configuration is set up to determine the frequency of the radiation of the tuneable radiation source 4.
In this context, a superposition device 9a is used to superpose radiation from the radiation source 4 on short pulse radiation formed by the short pulse radiation source 8.
In the illustrated exemplary embodiment, the optical resonator 2 has polarization eigenstates, which are almost exclusively adopted by the radiation at the respective resonant frequencies 3.
In the present exemplary embodiment, the isolation device 6 is set up in such a way that it separates the target resonant frequency 5 from the other resonant frequencies 3.
In particular, the isolation device 6 separates the target resonant frequency 5 from the other resonant frequencies 3 by preferably at least one linewidth of the target resonant frequency 5. In the exemplary embodiment, provision is preferably made for the isolation device 6 to separate the target resonant frequency 5 from the other resonant frequencies 3 by twice the linewidth or at least twice the linewidth of the target resonant frequency 5.
Likewise, the isolation device 6 is designed such that it separates the target resonant frequency 5 from the other resonant frequencies 3 in such a way that a difference between the target resonant frequency 5 and the other resonant frequencies 3 is formed so as to be greater than a modulation frequency 10 of the control loop 7.
Furthermore, the apparatus 1 represented in the exemplary embodiment illustrated in Figure 3a is designed in such a way that the isolation device 6 separates the target resonant frequency 5 from the other resonant frequencies 3 in such a way that a difference between the target resonant frequency 5 and the other resonant frequencies 3 corresponds at least approximately to a difference between adjacent resonant frequencies 3 of spatial modes of radiation in the polarization eigenstate of the target resonant frequency 5.
The beat analysis device 9 further has a frequency standard which 1s embodied as a gas cell.
In other embodiments, the frequency standard can also be embodied as an optical resonator which 1s stabilized by means of a GPS (global positioning system) signal.
In the illustrated exemplary embodiment, the optical resonator 2 has a first stationary resonator mirror 11 and a second stationary resonator mirror 12 and a deflection mirror 13.
In this case, provision can be made in particular for the first resonator mirror 11 and/or the second resonator mirror 12 to be provided as semi-transmissive mirrors. The use of semi-transmissive mirrors as resonator mirrors simplifies input coupling of radiation into the optical resonator 2 and/or output coupling of radiation from the optical resonator 2.
Alternatively, provision can also be made for the optical resonator 2 to have a stationary resonator mirror and a deflection mirror 13.
Further, provision can be made for the optical resonator 2 to have at least one stationary resonator mirror and at least one deflection mirror
13.
In the exemplary embodiment illustrated in Figure 3a, the isolation device 6 is embodied as a polarization-dependent retardation element. In particular, the retardation element is embodied as a retardation plate.
Alternatively, provision can be made for the retardation element to be embodied as a retardation coating on the deflection mirror 13.
Radiation from the tuneable radiation source 4, which is coupled into the optical resonator 2, has a polarization in the illustrated exemplary embodiment which corresponds to one of the polarization eigenstates of the optical resonator 2.
In this case, the deflection mirror 13 is arranged and embodied such that an angle of incidence of the radiation on the deflection mirror 13 is greater than 0°. The angle of incidence can also be greater than 10° and, in particular, also greater than 20°. Preferably, the at least one deflection mirror 13 is arranged and/or embodied such that the angle of incidence of the radiation on reflecting surfaces of the deflection mirror 13 is less than 80°.
Such a configuration can be particularly suitable for individual plane deflection mirrors.
In the present exemplary embodiment, the deflection mirror 13 is embodied as a corner-reflector reflector. Alternatively, provision can be made for the deflection mirror to be embodied as a corner cube and/or as a cat's eye mirror.
If the deflection mirror 13 is embodied as a corner reflector like in the exemplary embodiment illustrated in Figure 3a, an angle of incidence of 53° to 58°, in particular 54.7°, in relation to the surface normals of the reflecting surfaces can be particularly advantageous as this corresponds to an incidence that is at least approximately parallel to an axis of symmetry of the corner reflector.
In the present exemplary embodiment, the polarization of the radiation at the target resonant frequency 5 is the polarization at which the optical resonator 2 has the greatest finesse or reflectivity.
Additionally, the polarization is the polarization at which the optical resonator has the longest optical path length.
Provision is made for at least part of the optical resonator 2, the deflection mirror 13 in the illustrated exemplary embodiment, to be arranged at a component 14, the distance of which should be determined from another component or from a reference point.
The component 14 is arranged at an adjustment device 15 in order to bring the actual position of the component 14 at least closer to a target position.
The component 14 whose distance should be determined from another component or from a reference point can be any component of the projection exposure apparatus 100, 400, in particular the components 102,
103, 104, 105, 106, 107, 108, 109, 140, 401, 402, 403, 406, 407, 408, 411, 412, 415, 416, 417, 418, 419, 420, in particular one of the optical elements 415, 416, 418, 419, 420, 108, in particular one of the mirrors of one of the EUV and DUV projection exposure apparatuses 100, 400 shown in Figures 1 and
2. The reference point or the other component can likewise be one of the components 102, 103, 104, 105, 106, 107, 108, 109, 140, 401, 402, 403, 406, 407, 408, 411, 412, 415, 416, 417, 418, 419, 420 of the projection exposure apparatuses shown in Figures 1 and 2.
The apparatus 1 illustrated in Figure 3a is particularly suitable for carrying out a method for determining a distance, wherein the target resonant frequency 5 of the optical resonator 2, which has a plurality of resonant frequencies 3, is determined by means of the radiation from the radiation source 4 which is coupled into the optical resonator 2, and the spectrum of which comprises at least the target resonant frequency 5. In the method, the target resonant frequency 5 is isolated on the basis of its polarization from other resonant frequencies 3 of the optical resonator 2.
Figure 3b shows a further possible embodiment of the optical resonator 2. In this case, the optical resonator 2 is embodied as a so-called double folded optical resonator or as double folded cavity. In the exemplary embodiment illustrated in Figure 3b, the optical resonator 2 has a first stationary resonator mirror 11, a second stationary resonator mirror 12, a first, plane deflection mirror 13a and a second, stationary deflection mirror 13b, which is embodied as corner reflector. In this case, the first, plane deflection mirror 13a is arranged at the component 14 (not illustrated).
Further, the resonator mirrors 11, 12, the plane deflection mirror 13a and the second deflection mirror 13b or corner reflector are arranged such that the radiation emanating from the first resonator mirror 11 is steered by the plane deflection mirror 13a onto the second deflection mirror 13b or corner reflector. Following this, the radiation is cast back with a spatial offset in its direction of incidence by the second deflection mirror 13b or the corner reflector and steered onto the second resonator mirror 12 by the plane deflection mirror 13a.
In the exemplary embodiment of the optical resonator 2 illustrated in Figure 3b, the isolation device 6 is preferably embodied as a coating (not shown) of the second deflection mirror 13b of the optical resonator 2, said coating being formed from a plurality of layers in such a way that the relative phase of reflected radiation that is s-polarized in relation to a plane of incidence and of reflected radiation that is p-polarized in relation to the plane of incidence is adjustable by way of a suitable choice of the layer thickness values and the refractive indices.
Figure 4 shows a very approximate basic illustration of a spectrum of resonant frequencies 3 of the optical resonator 2. A frequency is plotted on a horizontal X-axis while an intensity is plotted on a vertical Y-axis.
In this case, the target resonant frequency 5 is so close to one of the adjacent resonant frequencies 3 that it is not possible to stabilize the tuneable radiation source 4 at the target resonant frequency 5. Figure 5 shows a further approximate basic illustration of the resonant spectrum of the optical resonator 2, wherein the isolation device 6 is arranged in the beam path of the optical resonator 2 in such a way that the target resonant frequency 5 is isolated from the adjacent next resonant frequency 3 by virtue of being separated from the next adjacent resonant frequency 3. Said separation is obtained by the isolation device 6 by shifting the target resonant frequency 5 to lower frequency values.
The frequency is plotted on the horizontal X-axis while the intensity is plotted on the vertical Y-axis.
In the exemplary embodiment, the target resonant frequency 5 is the lowest of the resonant frequencies 3 in the optical resonator 2. In particular, the method for determining a distance can be carried out by virtue of determining a distance of the deflection mirror 13 from at least one of the resonator mirrors 11, 12 using the target resonant frequency
5. In this case, the target resonant frequency 5 is determined from the frequency of the radiation, radiated into the optical resonator 2, from the tuneable radiation source 4 that has been stabilized at the target resonant frequency 5.
Figure 6 shows a basic illustration of an error signal of the Pound- Drever-Hall control loop 7. In this case, the error signal is plotted on a vertical Y-axis and a phase is plotted on the horizontal X-axis. In this case, the error signal has zeroes at the resonant frequency, which has the phase value of 0 on the X-axis, and at the modulation frequency 10 of the control loop 7, which occur on both sides of the phase value of 0.
It is particularly advantageous for the method for determining a distance to be designed such that the target resonant frequency 5 is separated from the other resonant frequencies 3 in such a way that a difference between the target resonant frequency 5 and the other resonant frequencies 3 is formed so as to be greater than the modulation frequency 10 of the control loop 7. In particular, provision is made for the difference to be equal to or greater than 1.5-times the modulation frequency 10 of the control loop 7.
Figure 7 shows a basic illustration of the Pound-Drever-Hall error signal for different spatial modes, denoted a to e, of the optical resonator 2.
In this case, zeros of the error signal occur at resonant frequencies 3 of the respectively higher modes. Further zeros appear from the zeros of the edges, separated by the modulation frequency 10.
In this case, the Pound-Drever-Hall error signal is once again plotted on a vertical Y-axis while a phase angle is plotted on a horizontal X- axis. Illustrated are error signals of the zeroth, the first, the second, the third and the fourth higher spatial mode of the resonant frequency.
Figure 8 shows a basic illustration of a zeroth spatial mode, denoted as g, of the adjacent other resonant frequency 3, denoted as g, from the target resonant frequency 5, denoted as f, of the optical resonator 2. The other resonant frequency 3, denoted as g, is separated from the target resonant frequency 5 by the isolation device 6 in such a way that the difference between the target resonant frequency 5 and the other resonant frequency 3, denoted as g, at least approximately corresponds to the difference between adjacent resonant frequencies 3 of spatial modes, denoted by 1 and 2, of radiation in a polarization eigenstate of the target resonant frequencies 5, of the optical resonator 2.
As a result of the adjacent resonant frequency 3 having been placed on the frequency of a higher target resonant frequency 5, in this case of the first spatial mode, a build-up of the target resonant frequency 5 is reduced.
Figure 9 shows a basic illustration of a retardation of a deflection mirror 13, embodied as a corner reflector, which has been provided with an isolation device 6 in the form of a retardation coating. In this case, an overall retardation in degrees is plotted on a vertical Y-axis. A mirror retardation in degrees is plotted on a horizontal X-axis.
It is evident in this case that the overall retardation of the deflection mirror 13 embodied as corner reflector yields 0° for a retardation of the three individual mirrors of 180° in each case. Consequently, it is easy to calculate a required mirror phase difference for a desired overall retardation. Preferably, a deflection mirror 13 or corner reflector is linearly birefringent for a double pass in the case of an overall retardation unequal to 0 such that the eigenmodes of the radiation in the optical resonator 2 are linearly polarized.
List of reference signs: 1 Apparatus 2 Optical resonator 3 Resonant frequency 4 Radiation source 5 Target resonant frequency 6 Isolation device 7 Control loop 7a Taking device 8 Short pulse radiation source 9 Beat analysis device 9a Superposition device 10 Modulation frequency 11 First stationary resonator mirror 12 Second stationary resonator mirror 13 Deflection mirror 13a First deflection mirror 13b Second deflection mirror 14 Component 15 Adjustment device 100 Projection exposure apparatus 102 Wafer 103 Illumination system 104 Recticle stage 105 Recticle 106 Wafer holder 107 Projection lens 108 Optical element 109 Mount 111 Projection beam
140 Lens housing 400 Projection exposure apparatus 401 Illumination system 402 Radiation source 403 Optical unit
404 Object field 405 Object plane 406 Recticle 407 Recticle holder
408 Projection optical unit 409 Image field 410 Image plane 411 Wafer 412 Wafer holder
413 EUV radiation 414 Intermediate focal plane 415 Field facet mirror 416 Pupil facet mirror 417 Optical assembly
418 Mirror 419 Mirror 420 Mirror

Claims (46)

ConclusiesConclusions 1. Inrichting (1) voor het bepalen van een afstand, omvattende een optische resonator (2), die een veelheid van resonantiefrequenties (3) heeft, en ten minste één stralingsbron (4), waarvan het spectrum ten minste één doelresonantiefrequentie (5) van de optische resonator (2) omvat, gekenmerkt doordat een isolatie-inrichting (6) is voorzien in het straalpad van de optische resonator (2), waarbij voornoemde isolatie-inrichting de doelresonantiefrequentie (5) van andere resonantiefrequenties (3) van de optische resonator (2) isoleert op basis van haar polarisatie.Distance determining device (1), comprising an optical resonator (2) having a plurality of resonance frequencies (3) and at least one radiation source (4) whose spectrum has at least one target resonant frequency (5) of the optical resonator (2), characterized in that an isolation device (6) is provided in the beam path of the optical resonator (2), said isolation device the target resonant frequency (5) of other resonant frequencies (3) of the optical resonator (2) insulates based on its polarization. 2. Inrichting (1) volgens conclusie 1, gekenmerkt doordat de ten minste één stralingsbron (4) instelbaar 1s.Device (1) according to claim 1, characterized in that the at least one radiation source (4) is adjustable 1s. 3. Inrichting (1) volgens conclusie 2, gekenmerkt doordat een regelkring (7) 1s voorzien, waarbij de laatste ingericht is om de instelbare stralingsbron (4) te stabiliseren, waarbij het voor de instelbare stralingsbron (4) mogelijk is om te worden gestabiliseerd bij de doelresonantiefrequentie (5).Device (1) according to claim 2, characterized in that a control circuit (7) is provided, the latter being arranged to stabilize the adjustable radiation source (4), it being possible for the adjustable radiation source (4) to be stabilized at the target resonant frequency (5). 4. Inrichting volgens conclusie 3, gekenmerkt doordat de regelkring (7) is ingericht volgens de Pound-Drever-Hall techniek.Device according to claim 3, characterized in that the control circuit (7) is arranged according to the Pound-Drever-Hall technique. 5. Inrichting (1) volgens een van de conclusies 2 tot 4, gekenmerkt doordat ten minste een korte-puls stralingsbron (8) en een beatanalyse- inrichting (9) zijn voorzien voor het bepalen van een beatfrequentie van een superpositiesignaal gevormd door de superpositie van straling van de instelbare stralingsbron (4) op korte-puls straling van de korte-puls stralingsbron (8) om de frequentie van de straling van de stralingsbron (4) te bepalen.Device (1) according to one of Claims 2 to 4, characterized in that at least one short-pulse radiation source (8) and a beat analysis device (9) are provided for determining a beat frequency of a superposition signal formed by the superposition of radiation from the adjustable radiation source (4) to short-pulse radiation from the short-pulse radiation source (8) to determine the frequency of the radiation from the radiation source (4). 6. Inrichting (1) volgens een van de conclusies 1 tot 5, gekenmerkt doordat de optische resonator (2) polarisatie-eigentoestanden heeft, die bijna uitsluitend aangenomen worden door de straling bij de respectieve resonantiefrequenties (3).Device (1) according to one of Claims 1 to 5, characterized in that the optical resonator (2) has polarization eigenstates which are assumed almost exclusively by the radiation at the respective resonance frequencies (3). 7. Inrichting (1) volgens een van de conclusies 1 tot 6, gekenmerkt doordat de isolatie-inrichting (6) de doelresonantiefrequentie (5) scheidt van de andere resonantiefrequenties (3).Device (1) according to one of Claims 1 to 6, characterized in that the isolation device (6) separates the target resonant frequency (5) from the other resonant frequencies (3). 8. Inrichting (1) volgens een van de conclusies 1 tot 7, gekenmerkt doordat de isolatie-inrichting (6) de doelresonantiefrequentie (5) scheidt van de andere resonantiefrequenties (3) door ten minste één lijnbreedte, bij voorkeur door ten minste twee keer de lijnbreedte, van de doelresonantiefrequentie (5).Device (1) according to one of claims 1 to 7, characterized in that the isolation device (6) separates the target resonant frequency (5) from the other resonant frequencies (3) by at least one line width, preferably by at least two times the line width, of the target resonant frequency (5). 9. Inrichting (1) volgens een van de conclusies 3 tot 8, gekenmerkt doordat de isolatie-inrichting (6) de doelresonantiefrequentie (5) zodanig scheidt van de andere resonantiefrequenties (3) dat een verschil tussen de doelresonantiefrequentie (5) en de andere resonantiefrequenties (3) gevormd wordt om zo groter te zijn dan een modulatiefrequentie (10) van de regelkring (7).Device (1) according to one of Claims 3 to 8, characterized in that the isolation device (6) separates the target resonant frequency (5) from the other resonant frequencies (3) such that a difference between the target resonant frequency (5) and the other resonant frequencies (3) are formed so as to be greater than a modulation frequency (10) of the control loop (7). 10. Inrichting (1) volgens een van de conclusies 6 tot 9, gekenmerkt doordat de isolatie-inrichting (6) de doelresonantiefrequentie (5) zodanig scheidt van de andere resonantiefrequenties (3) dat een verschil tussen de doelresonantiefrequenties (5) en de andere resonantiefrequenties (3) ten minste bij benadering correspondeert met een verschil tussen nabijgelegen resonantiefrequenties van spatiale modes van straling in de polarisatie- eigentoestand van de doelresonantiefrequentie (5).A device (1) according to any one of claims 6 to 9, characterized in that the isolation device (6) separates the target resonant frequency (5) from the other resonant frequencies (3) such that a difference between the target resonant frequencies (5) and the other resonance frequencies (3) at least approximately correspond to a difference between nearby resonance frequencies of spatial modes of radiation in the polarization eigenstate of the target resonant frequency (5). 11. Inrichting (1) volgens een van de conclusies 5 tot 10, gekenmerkt doordat de beatanalyse-inrichting (9) een frequentiestandaard heeft belichaamd als een gascel.Device (1) according to one of claims 5 to 10, characterized in that the beat analyzer (9) has a frequency standard embodied as a gas cell. 12. Inrichting (1) volgens een van de conclusies 1 tot 11, gekenmerkt doordat de optische resonator (2) ten minste één stationaire resonatorspiegel en ten minste één deflectiespiegel (13) heeft.Device (1) according to one of Claims 1 to 11, characterized in that the optical resonator (2) has at least one stationary resonator mirror and at least one deflection mirror (13). 13. Inrichting (1) volgens een van de conclusies 1 tot 12, gekenmerkt doordat de optische resonator een eerste stationaire resonatorspiegel (11) en een tweede stationaire resonatorspiegel (12) en ten minste één deflectiespiegel (13) heeft.Device (1) according to one of Claims 1 to 12, characterized in that the optical resonator has a first stationary resonator mirror (11) and a second stationary resonator mirror (12) and at least one deflection mirror (13). 14. Inrichting (1) volgens een van de conclusies 1 tot 13, gekenmerkt doordat de isolatie-inrichting (6) belichaamd is als een polarisatie- afhankelijk vertragingselement.Device (1) according to one of Claims 1 to 13, characterized in that the isolation device (6) is embodied as a polarization-dependent delay element. 15. Inrichting (1) volgens conclusie 14, gekenmerkt doordat het vertragingselement belichaamd is als een vertragingscoating aan de deflectiespiegel (13).The device (1) according to claim 14, characterized in that the retardation element is embodied as a retardation coating on the deflection mirror (13). 16. Inrichting (1) volgens conclusie 14 of 15, gekenmerkt doordat het vertragingselement belichaamd is als een vertragingsplaat.The device (1) according to claim 14 or 15, characterized in that the retardation element is embodied as a retardation plate. 17. Inrichting (1) volgens een van de conclusies 6 tot 16, gekenmerkt doordat de instelbare stralingsbron (4) een polarisatie heeft die correspondeert met één van de polarisatie-eigentoestanden.Device (1) according to one of Claims 6 to 16, characterized in that the adjustable radiation source (4) has a polarization corresponding to one of the polarization eigenstates. 18. Inrichting (1) volgens een van de conclusies 1 tot 17, gekenmerkt doordat de doelresonantiefrequentie (5) de laagste resonantiefrequentie is.The device (1) according to any one of claims 1 to 17, characterized in that the target resonant frequency (5) is the lowest resonant frequency. 19. Inrichting (1) volgens een van de conclusies 12 tot 18, gekenmerkt doordat de ten minste één deflectiespiegel (13) zodanig is voorzien en/of belichaamd dat een invalshoek van de straling groter 1s dan 0°, bij voorkeur groter dan 10°, in het bijzonder bij voorkeur groter dan 50°.Device (1) according to one of Claims 12 to 18, characterized in that the at least one deflection mirror (13) is provided and/or embodied such that an angle of incidence of the radiation is greater than 0°, preferably greater than 10° , especially preferably greater than 50°. 20. Inrichting (1) volgens een van de conclusies 12 tot 19, gekenmerkt doordat de ten minste één deflectiespiegel (13) belichaamd is als een hoekreflector reflector en/of als een hoekkubus en/of een kattenoogspiegel.The device (1) according to any one of claims 12 to 19, characterized in that the at least one deflection mirror (13) is embodied as a corner reflector reflector and/or as a corner cube and/or a cat's eye mirror. 21. Inrichting (1) volgens een van de conclusies 1 tot 20, gekenmerkt doordat de polarisatie van de doelresonantiefrequentie (5) de polarisatie is waarvoor de optische resonator (2) de grootste finesse en/of reflectiviteit heeft.The device (1) according to any one of claims 1 to 20, characterized in that the polarization of the target resonant frequency (5) is the polarization for which the optical resonator (2) has the greatest finesse and/or reflectivity. 22. Inrichting (1) volgens een van de conclusies 1 tot 21, gekenmerkt doordat de polarisatie van de doelresonantiefrequentie (5) de polarisatie is waarvoor de optische resonator (2) de grootste reflectiviteit en de langste optische pad lengte heeft.The device (1) according to any one of claims 1 to 21, characterized in that the polarization of the target resonant frequency (5) is the polarization for which the optical resonator (2) has the greatest reflectivity and the longest optical path length. 23. Inrichting volgens een van de conclusies 1 tot 22, gekenmerkt doordat ten minste één deel van de optische resonator (2) voorzien is bij een component (14), waarvan de afstand tot een referentiepunt bepaald zou moeten worden.Device according to one of Claims 1 to 22, characterized in that at least one part of the optical resonator (2) is provided at a component (14), whose distance from a reference point should be determined. 24. Inrichting (1) volgens een van de conclusies 12 tot 23, gekenmerkt doordat de deflectiespiegel (13) van de optische resonator (2) voorzien is bij de component (14).The device (1) according to any one of claims 12 to 23, characterized in that the deflection mirror (13) of the optical resonator (2) is provided at the component (14). 25. Werkwijze voor het bepalen van een afstand, volgens dewelke een doelresonantiefrequentie (5) van een optische resonator (2), die een veelheid van resonantiefrequenties (3) heeft, wordt bepaald door middel van straling van een stralingsbron (4) die gekoppeld is in de optische resonator (2) en waarvan het spectrum ten minste de doelresonantiefrequentie (5) omvat, gekenmerkt doordat de doelresonantiefrequentie (5) van andere resonantiefrequenties (3) van de optische resonator (2) wordt geïsoleerd op basis van haar polarisatie.25. Method for determining a distance according to which a target resonant frequency (5) of an optical resonator (2) having a plurality of resonant frequencies (3) is determined by means of radiation from a radiation source (4) coupled in the optical resonator (2) and whose spectrum includes at least the target resonant frequency (5), characterized in that the target resonant frequency (5) is isolated from other resonant frequencies (3) of the optical resonator (2) on the basis of its polarization. 26. Werkwijze volgens conclusie 25, gekenmerkt doordat de straling gevormd wordt door een instelbare stralingsbron (4).Method according to claim 25, characterized in that the radiation is formed by an adjustable radiation source (4). 27. Werkwijze volgens conclusie 26, gekenmerkt doordat de straling bij de doelresonantiefrequentie (5) wordt gestraald in de optische resonator (4) en gestabiliseerd bij de doelresonantiefrequentie (5) door middel van een regelkring (7) die is ingericht om de instelbare stralingsbron (4) te stabiliseren.A method according to claim 26, characterized in that the radiation at the target resonant frequency (5) is radiated in the optical resonator (4) and stabilized at the target resonant frequency (5) by means of a control circuit (7) arranged around the adjustable radiation source ( 4) to stabilize. 28. Werkwijze volgens conclusie 27, gekenmerkt doordat de regelkring (7) wordt bediend volgens de Pound-Drever-Hall techniek.Method according to claim 27, characterized in that the control loop (7) is operated according to the Pound-Drever-Hall technique. 29. Werkwijze volgens een van de conclusies 25 tot 28, gekenmerkt doordat de straling van de instelbare stralingsbron (4) wordt gesuperponeerd op korte-puls straling van een korte-puls stralingsbron (8) en een beatfrequentie van een superpositiesignaal daarbij gevormd wordt bepaald door middel van een beatanalyse-inrichting (9).A method according to any one of claims 25 to 28, characterized in that the radiation from the adjustable radiation source (4) is superimposed on short-pulse radiation from a short-pulse radiation source (8) and a beat frequency of a superposition signal formed thereby is determined by by means of a beat analyzer (9). 30. Werkwijze volgens conclusie 29, gekenmerkt doordat de beatfrequentie van het superpositiesignaal wordt bepaald door middel van de beatanalyse-inrichting (9) die een frequentiestandaard bij voorkeur belichaamd als een gascel heeft.A method according to claim 29, characterized in that the beat frequency of the superposition signal is determined by means of the beat analyzer (9) having a frequency standard preferably embodied as a gas cell. 31. Werkwijze volgens een van de conclusies 25 tot 30, gekenmerkt doordat de straling bij de resonantiefrequenties (3) bijna uitsluitend aanwezig is in polarisatie-eigentoestanden van de optische resonator (2).Method according to one of Claims 25 to 30, characterized in that the radiation at the resonance frequencies (3) is present almost exclusively in polarization eigenstates of the optical resonator (2). 32. Werkwijze volgens een van de conclusies 25 tot 31, gekenmerkt doordat de doelresonantiefrequentie (5) wordt gescheiden van de andere resonantiefrequenties (3).A method according to any one of claims 25 to 31, characterized in that the target resonant frequency (5) is separated from the other resonant frequencies (3). 33. Werkwijze volgens een van de conclusies 25 tot 32, gekenmerkt doordat de doelresonantiefrequentie (5) wordt gescheiden van de andere resonantiefrequenties (3) door ten minste één lijnbreedte, bij voorkeur door ten minste twee keer de lijnbreedte, van de doelresonantiefrequentie (5).Method according to one of Claims 25 to 32, characterized in that the target resonant frequency (5) is separated from the other resonant frequencies (3) by at least one line width, preferably by at least twice the line width, of the target resonant frequency (5) . 34. Werkwijze volgens een van de conclusies 27 tot 33, gekenmerkt doordat de doelresonantiefrequentie (5) zodanig wordt gescheiden van de andere resonantiefrequenties (3) dat een verschil tussen de doelresonantiefrequentie (5) en de andere resonantiefrequenties (3) gevormd wordt om zo groter te zijn dan een modulatiefrequentie (10) van de regelkring (7).A method according to any one of claims 27 to 33, characterized in that the target resonant frequency (5) is separated from the other resonant frequencies (3) such that a difference is formed between the target resonant frequency (5) and the other resonant frequencies (3) so as to be greater than a modulation frequency (10) of the control loop (7). 35. Werkwijze volgens een van de conclusies 31 tot 34, gekenmerkt doordat de doelresonantiefrequentie (5) zodanig wordt gescheiden van de andere resonantiefrequenties (3) dat een verschil tussen de doelresonantiefrequenties (5) en de andere resonantiefrequenties (3) ten mmste bij benadering correspondeert met een verschil tussen nabijgelegen resonantiefrequenties van spatiale modes van straling in de polarisatie- eigentoestand van de doelresonantiefrequentie (5) van de optische resonator (2).A method according to any one of claims 31 to 34, characterized in that the target resonant frequency (5) is separated from the other resonant frequencies (3) such that a difference between the target resonant frequencies (5) and the other resonant frequencies (3) corresponds at least approximately. with a difference between nearby resonance frequencies of spatial modes of radiation in the polarization eigenstate of the target resonant frequency (5) of the optical resonator (2). 36. Werkwijze volgens een van de conclusies 25 tot 35, gekenmerkt doordat een deflectiespiegel (13) van ten minste één stationaire resonatorspiegel wordt bepaald.Method according to one of Claims 25 to 35, characterized in that a deflection mirror (13) of at least one stationary resonator mirror is determined. 37. Werkwijze volgens conclusie 36, gekenmerkt doordat een afstand van de deflectiespiegel (13) van een eerste stationaire resonatorspiegel (11) en/of een tweede stationaire resonatorspiegel (12) wordt bepaald.Method according to claim 36, characterized in that a distance of the deflection mirror (13) from a first stationary resonator mirror (11) and/or a second stationary resonator mirror (12) is determined. 38. Werkwijze volgens een van de conclusies 25 tot 37, gekenmerkt doordat de doelresonantiefrequentie (5) wordt geïsoleerd van andere resonantiefrequenties (3) van de optische resonator (2) door een isolatie- inrichting (6), in het bijzonder een vertragingselement.A method according to any one of claims 25 to 37, characterized in that the target resonant frequency (5) is isolated from other resonant frequencies (3) of the optical resonator (2) by an isolating device (6), in particular a delay element. 39. Werkwijze volgens een van de conclusies 31 tot 38, gekenmerkt doordat de straling wordt gekoppeld in de optische resonator (2) met een polarisatie die correspondeert met één van de polarisatie-eigentoestanden.Method according to one of claims 31 to 38, characterized in that the radiation is coupled in the optical resonator (2) with a polarization corresponding to one of the polarization eigenstates. 40. Werkwijze volgens een van de conclusies 25 tot 39, gekenmerkt doordat straling aan de laagste resonantiefrequentie (5) wordt gekoppeld in de optische resonator (2).A method according to any one of claims 25 to 39, characterized in that radiation at the lowest resonance frequency (5) is coupled in the optical resonator (2). 41. Werkwijze volgens een van de conclusies 36 tot 40, gekenmerkt doordat een afstand van de deflectiespiegel (13) van ten minste één van de resonatorspiegels (11, 12) wordt bepaald van de doelresonantiefrequentie (5), volgens dewelke de doelresonantiefrequentie (5) wordt bepaald van de frequentie van de straling gestraald in de optische resonator (2) door de instelbare stralingsbron (4) die werd gestabiliseerd bij de doelresonantiefreguentie (5).Method according to one of Claims 36 to 40, characterized in that a distance of the deflection mirror (13) from at least one of the resonator mirrors (11, 12) is determined from the target resonant frequency (5), according to which the target resonant frequency (5) is determined is determined from the frequency of the radiation radiated into the optical resonator (2) by the adjustable radiation source (4) which was stabilized at the target resonant frequency (5). 42. Werkwijze volgens een van de conclusies 36 tot 41, gekenmerkt doordat straling in de optische resonator (2) de ten minste één deflectiespiegel (13) raakt op een invalshoek die groter is dan 0°, bij voorkeur groter dan 10°, in het bijzonder bij voorkeur groter dan 20°.A method according to any one of claims 36 to 41, characterized in that radiation in the optical resonator (2) strikes the at least one deflection mirror (13) at an angle of incidence greater than 0°, preferably greater than 10°, in the particularly preferably greater than 20°. 43. Werkwijze volgens een van de conclusies 25 tot 42, gekenmerkt doordat ten minste één afstand van een component (14) van een referentiepunt wordt bepaald, waarbij ten minste een deel van de optische resonator (2) voorzien is bij het component (14).Method according to one of claims 25 to 42, characterized in that at least one distance of a component (14) from a reference point is determined, at least part of the optical resonator (2) being provided at the component (14) . 44. Werkwijze volgens een van de conclusies 43, gekenmerkt doordat het deel van de optische resonator (2) voorzien bij de component (14) de deflectiespiegel (13) is.Method according to one of Claims 43, characterized in that the part of the optical resonator (2) provided at the component (14) is the deflection mirror (13). 45. Lithografiesysteem, in het bijzonder projectiebelichtingsinrichting (100, 400) voor de halfgeleiderindustrie, die ten minste één component (102, 103, 104, 105, 106, 107, 108, 109, 140, 401, 402, 403, 406, 407, 408, 411, 412, 415, 416, 417, 418, 419, 420) heeft, in het bijzonder een optisch element (108, 415, 416, 418, 419, 420, 108), in het bijzonder bij voorkeur een spiegel, gekenmerkt doordat ten minste één actuele positie van ten minste één van de componenten (102, 103, 104, 105, 106, 107, 108, 109, 140, 401, 402, 403, 406, 407, 408, 411, 412, 415, 416, 417, 418, 419, 420) wordt bepaald door middel van een inrichting (1) volgens een van de Conclusies 1 tot 24 en/of door middel van een werkwijze volgens een van de Conclusies 25 tot 44 dankzij het bepalen van een afstand van de component van een referentiepunt.45. Lithography system, in particular projection exposure device (100, 400) for the semiconductor industry, comprising at least one component (102, 103, 104, 105, 106, 107, 108, 109, 140, 401, 402, 403, 406, 407 , 408, 411, 412, 415, 416, 417, 418, 419, 420), in particular an optical element (108, 415, 416, 418, 419, 420, 108) especially preferably a mirror characterized in that at least one current position of at least one of the components (102, 103, 104, 105, 106, 107, 108, 109, 140, 401, 402, 403, 406, 407, 408, 411, 412, 415, 416, 417, 418, 419, 420) is determined by means of an apparatus (1) according to one of Claims 1 to 24 and/or by means of a method according to one of Claims 25 to 44 by virtue of determining a distance of the component from a reference point. 46. Lithografiesysteem volgens conclusie 45, gekenmerkt doordat een instelinrichting (15) is voorzien voor het dichter bij ten minste één doelpositie brengen van de actuele positie van ten minste één van de componenten (102, 103, 104, 105, 106, 107, 108, 109, 140, 401, 402, 403, 406, 407, 408, 411, 412, 415, 416, 417, 418, 419, 420).A lithography system according to claim 45, characterized in that an adjustment device (15) is provided for bringing the current position of at least one of the components (102, 103, 104, 105, 106, 107, 108) closer to at least one target position. , 109, 140, 401, 402, 403, 406, 407, 408, 411, 412, 415, 416, 417, 418, 419, 420).
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