NL2024826B1 - Improved PV-panel - Google Patents
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- NL2024826B1 NL2024826B1 NL2024826A NL2024826A NL2024826B1 NL 2024826 B1 NL2024826 B1 NL 2024826B1 NL 2024826 A NL2024826 A NL 2024826A NL 2024826 A NL2024826 A NL 2024826A NL 2024826 B1 NL2024826 B1 NL 2024826B1
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- 238000000576 coating method Methods 0.000 claims abstract description 60
- 239000011248 coating agent Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 27
- 229920000642 polymer Polymers 0.000 claims description 36
- 239000002245 particle Substances 0.000 claims description 27
- 239000006184 cosolvent Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 235000014692 zinc oxide Nutrition 0.000 claims description 5
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 4
- OHJMTUPIZMNBFR-UHFFFAOYSA-N biuret Chemical compound NC(=O)NC(N)=O OHJMTUPIZMNBFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 3
- 150000001242 acetic acid derivatives Chemical class 0.000 claims description 3
- -1 aluminum tin oxide Chemical compound 0.000 claims description 3
- 230000001680 brushing effect Effects 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 229920006037 cross link polymer Polymers 0.000 claims description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical group [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 150000002170 ethers Chemical class 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical class [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 claims description 3
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- OWOMRZKBDFBMHP-UHFFFAOYSA-N zinc antimony(3+) oxygen(2-) Chemical compound [O--].[Zn++].[Sb+3] OWOMRZKBDFBMHP-UHFFFAOYSA-N 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- AEDZKIACDBYJLQ-UHFFFAOYSA-N ethane-1,2-diol;hydrate Chemical compound O.OCCO AEDZKIACDBYJLQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 239000008213 purified water Substances 0.000 claims description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 claims description 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims 2
- 230000002708 enhancing effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 125000005842 heteroatom Chemical group 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 229960005088 urethane Drugs 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229940043232 butyl acetate Drugs 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention is in the field of an improved PV—panel comprising solar cells, or photovoltaic (PV) cell, and a coating for improving yield of said PV—panel, a method of applying said coating on the PV—panel, and a method of improving yield of said PV—panel by applying said coating. Said solar cells may comprise at least one hetero junction or at least one homo— junction and may have various layouts.
Description
Improved PV-panel
FIELD OF THE INVENTION The invention is in the field of an improved PV-panel com- prising solar cells, or photovoltaic (PV) cell, and a coating for improving yield of said PV-panel, a method of applying sald coating on the PV-panel, and a method of improving yield of said PV-panel by applying said coating. Said solar cells may comprise at least one hetero junction or at least one ho- mo-junction and may have various layouts.
BACKGROUND OF THE INVENTION A solar cell is device that converts energy of light, typ- ically sun light (hence “solar”), directly into electricity by the so-called photovoltaic effect. The solar cell may be con- sidered a photoelectric cell, having electrical characteris- tics, such as current, voltage, resistance, and fill factor, which vary when exposed to light and which vary from type of cell to type.
Solar cells are described as being photovoltaic irrespec- tive of whether the source is sunlight or an artificial light. They may also be used as photo detector.
When a solar cell absorbs light it may generate either electron-hole pairs or excitons. In order to obtain an elec- trical current charge carriers of opposite types are separat- ed. The separated charge carriers are “extracted” to an exter- nal circuit, typically providing a DC-current. For practical use a DC-current may be transformed into an AC-current, e.d. by using a transformer.
Typically solar cells are grouped into an array of ele- ments. Various elements may form a panel, and various panels may form a system.
Wafer based c-Si solar cells contribute to more than 90% of the total PV market. According to recent predictions, this trend will remain for the upcoming years towards 2020 and many years beyond. Due to their simplified process, conventional c- Si solar cells dominate a large part of the market. As alter- native to the industry to improve the power to cost ratio, the silicon heterojunction approach has become increasingly at-
- 2 = tractive for PV industry, even though the relatively compli- cated process to deploy the proper front layers, such as a transparent conductive oxide (TCO) and an inherent low thermal budget of the cells limiting usage of existing production lines and thus result in a negligible market share so far.
A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors.
These semiconducting materials have unequal band gaps as opposed to a homojunction.
A homojunction relates to a semiconductor in- terface formed by typically two layers of similar semiconduc- tor material, wherein these semiconductor materials have equal band gaps and typically have a different doping (either in concentration, in type, or both). A common example is a homo- junction at the interface between an n-type layer and a p-type layer, which is referred to as a p-n junction.
In heterojunc- tions advanced techniques are used to precisely control a dep- osition thickness of layers involved and to create a lattice- matched abrupt interface.
Three types of heterojunctions can be distinguished, a straddling gap, a staggered gap, and a broken gap.
A disadvantage of solar cells is that the conversion per se is not very efficient, typically, for Si-solar cells, lim- ited to some 20%. Theoretically a single p-n junction crystal- line silicon device has a maximum power efficiency of 33.75. An infinite number of layers may reach a maximum power effi- ciency of 86%. The highest ratio achieved for a solar cell per se at present is about 44%. For commercial silicon solar cells the record is about 25.6%. In view of efficiency the front contacts may be moved to a rear or back side, eliminating shaded areas.
In addition thin silicon films were applied to the wafer.
Solar cells also suffer from various imperfections, such as recombination losses, reflectance losses, heating dur- ing use, thermodynamic losses, shadow, internal resistance, such as shunt and series resistance, leakage, etc.
A qualifi- cation of performance of a solar cell is the fill factor (FF). The fill factor may be defined as a ratio of an actual maximum obtainable power to the product of the open circuit voltage and short circuit current.
It is considered to be a key param- eter in evaluating performance.
A typical advanced commercial
- 3 = solar cell has a fill factor > 0.75, whereas less advanced cells have a fill factor between 0.4 and 0.7. Cells with a high fill factor typically have a low equivalent series re- sistance and a high equivalent shunt resistance; in other words less internal losses occur. Efficiency is nevertheless improving gradually, so every relatively small improvement is welcomed and of significant importance.
The surface of a solar cell typically forms a barrier for light. Light may be reflected or adsorbed, and as a conse- quence not reach the cell itself. Bare silicon has a high sur- face reflection of over 30%. The reflection may be reduced by texturing the silicon surface and by applying anti-reflection coatings (ARC) to the surface lowering the reflectivity to an average of 3%. Various efforts have been taken to improve the surface properties of solar cells. However there is room for improvement.
A state of the art anti-reflection coating in the industry is a SiNx layer with a thickness between 60 and 75 nm depend- ing on an underlying layer. For further decreasing the reflec- tion of solar cells a double anti-reflection coating (DLARC) may be provided, consisting of a SiNx layer in combination with a lower reflective index layer, for example MgF2. By us- ing DLARC the surface reflection can be minimized to an aver- age of 1%. For such a DLARC, one needs to precisely control the thickness of each layer, and it is also sensitive to the refractive index of the layer underneath. For these conven- tional double or triple anti-reflection coatings, different machinery has to be used for these layers, which increases costs and complexity. In an alternative a so-called black-Si may be provided, which may be induced by reactive ion etching or metal catalytic wet etching of a wafer-based Si surface. This black-Si gives in principle the highest potential for achieving a minimum solar cell reflection. However, this ap- proach is found to induce defects or impurities and contamina- tions to the silicon surface, challenging the surface pas- sivation and eventually decreasing the solar cell’s electrical performance. Also here there is a need for extra equipment, such as deep RIE or chemical bath plus metal particles deposi- tion, and the passivation may be rather complex.
— 4 — The present invention therefore relates to an improved PV- panel, which overcomes one or more of the above disadvantages, without jeopardizing functionality and advantages.
SUMMARY OF THE INVENTION The present invention relates in a first aspect to an improved PV-panel comprising at least one solar cell (100), the solar cell comprising a PV-material (10), on a side for receiving light a transparent protection layer (11), such as a glass layer, characterized in a light-to-electricity conver- sion improving coating (12) on the transparent protection lay- er (11), wherein the coating comprises a polymer (13), and electrically conductive transparent particles (14) embedded in said polymer (13). Surprisingly the present coating is found to increase yield of PV-panels/PV-cells by 10% or more, de- pending on ambient conditions, such as temperature, and light. Such is even more surprising as the present coating may be used as a heat shield, such as for windows; in said applica- tion said coating is found to reduce transmittance of visible (appearing light blueish), near infrared (appearing greenish) and UV-radiation (appearing yellowish) and is therefor not ex- pected to increase yield.
In a second aspect the present invention relates to a method of applying a coating to a PV-panel comprising provid- ing said coating in an aqueous solution, wherein the coating comprises a polymer (13), and electrically conductive trans- parent particles (14) embedded in said polymer (13), brushing the coating on the PV-panel, and drying said coating, prefera- bly under ambient and dry conditions.
In a second aspect the present invention relates to a method for improving PV-yield, comprising applying a method according to the invention or providing an improved PV-panel according to the invention. When receiving sun-light the pre- sent PV-panel is found to have an increased yield.
Thereby the present invention provides a solution to one or more of the above-mentioned problems.
Advantages of the present invention are detailed through- out the description.
- 5 —
DETAILED DESCRIPTION OF THE INVENTION The present invention relates in a first aspect to an improved PV-panel.
In an exemplary embodiment of said improved PV-panel the coating may have a thickness of < 20 um, preferably a thick- ness of 1-10 um, more preferably a thickness of 3-8 um. In an exemplary embodiment of said improved PV-panel the polymer may be selected from siloxane cross-linked polymers, and urethane polymers, preferably biuret urethane polymers, such as polymers with structural formula R3
MAN NN 2 “0 0.
wherein Rl, R2, and R3 are each independently selected from CoHzn (N=C=0)m, wherein ne[2-10], preferably ne[3-8], and where- in me[0-2], with the proviso that at least two of Rl, RZ, and R3 comprise an N=C=O-moiety, and combinations thereof.
In an exemplary embodiment of said improved PV-panel the electrically conductive transparent particles (14) may be se- lected from optoelectronic materials, preferably from conduc- tive oxides, more preferably mixed oxides, even more prefera- bly mixed tin oxides, mixed tungsten oxides, or mixed zinc ox- ides, such as indium tin oxide, antimony tin oxide, aluminum tin oxide, gallium tin oxide, indium zinc oxide, antimony zinc oxide, aluminum zinc oxide, gallium zinc oxide, preferably doped mixed oxides, from carbon nanotubes, and from graphene.
In an exemplary embodiment of said improved PV-panel the electrically conductive transparent particles (14) may be crystalline, semi-crystalline, or a combination thereof.
In an exemplary embodiment of said improved PV-panel the electrically conductive transparent particles (14) may have a particle size from 40-1000 nm, preferably 60-500 nm, such as 100-300 nm.
In an exemplary embodiment of said improved PV-panel the coating (12) may comprise 60-80 vol.% polymer (13), preferably
- 6 — 70-75 vol.% polymer, and/or 20-40 vol.2 particles (14), pref- erably 23-35 vol.% particles, such as 25-30 vol.%.
In an exemplary embodiment of said improved PV-panel the coating may have a density of 0.98-1.2 gr/cm?, such as 1.05-
1.15 gr/cmì.
In an exemplary embodiment of said improved PV-panel the PV-panel may be a refurbished PV-panel.
In a second aspect the present invention relates to a method of applying a coating to a PV-panel.
In an exemplary embodiment of said method of applying a coating 10-20 gr/m? coating may be applied, such as 12-15 gr/m? coating.
In an exemplary embodiment of said method of applying a coating the coating may be dried during 1-24 hours, preferably 2-12 hours, such as 6-8 hours.
In an exemplary embodiment of said method of applying a coating the aqueous solution may comprise 40-70 vol.% solvent and/or co-solvents, preferably 50-60 vol.%, wherein the sol- vent and/or co-solvent may preferably be selected from ke- tones, such as methyl isobutyl ketone, acetates, such as butyl acetate, ethers, such as ethylene glycol mono-butyl ether, wa- ter, and combinations thereof, preferably 54-57 vol. % puri- fied water and/or 1-5 vol. % co-solvent, such as 2-3 vol.% co- solvent.
In an exemplary embodiment of said method of applying a coat- ing the aqueous solution may comprise 10-15 vol.4% particles, and/or 25-40 vol.% polymer or prepolymer.
The invention is further detailed by the accompanying figures and example, which are exemplary and explanatory of nature and are not limiting the scope of the invention.
SUMMARAY OF THE FIGURES Figure 1-3 show details of the present invention.
DETAILED DESCRIPTION OF THE FIGURES Figure 1 shows a schematic cross section of the present coated panel. Therein an exemplary improved PV-panel is shown, comprising a solar cell 100, the solar cell comprising a PV- material 10, on a side for receiving light a transparent pro-
- 7 = tection layer 11, such as a glass layer, characterized in a light-to-electricity conversion improving coating 12 on the transparent protection layer 11, wherein the coating comprises a polymer 13, and electrically conductive transparent parti- cles 14 embedded in said polymer 13.
Figure 2 shows a structural formula of a preferred biuret polymer, wherein R1, R2, and R3 are each independently select- ed from CH: (N=C=0)y, wherein ne[2-10], preferably ne[3-8], and wherein me [0-2], with the proviso that at least two of Rl, R2, and R3 comprise an N=C=O-moiety, and combinations thereof.
Figure 3 shows a typical layout for eight modules of PV- panels. These are numbered consecutively. The panels receive a similar or same amount of light, as they are all oriented in the same direction, no shadowing effects are present, and oth- erwise there is no reason to assume any difference therein. A short explanation is given below. Before we started the test at the location in Hoofddorp, PV panel 1.1.6 was by far the worst performing panel. As the second-worst panel 1.1.2 came out. Inventors then decided to coat the worst-performing panel with our coating and then monitored how the differences com- pared to the second-worst panel. The panel was coated with wa- terbased Adglasscool ATo comprising 30-35 wt.% urethane resin CAS 4035-89-6, 12.5-15.5 wt.% ATO/Sn0, 2-3 wt.% cosolvent CAS 111-76-2, and the remainder (54-57 wt.%) (purified) water. It was then observed that panel 1.1.6 clearly outperformed panel
1.1.2. In the hottest period ever measured in the Netherlands (last summer, end of July, 40°C plus) there were days when
1.1.6 even outperformed 1.1.2 by more than 30%. Surprisingly also during the rest of the time, even up to the date of fil- ing, the results of 1.1.6 were always better than those of
1.1.2. It is noted that as in view of reduced irradiance by the sun the relative differences were not as spectacular as last summer, but 1.1.6 is still daily between 8-9, and some- times between 15-20% more efficient than 1.1.2. Inventors ac- tually expect our panel 1.1.6 to perform worse in these darker days (because there is significantly less light, the days are shorter and therefore an extra layer is applied by us at
1.1.6), the opposite is still true in practice.
Below is a sample of days showing relative better yield of
- 8 - the coated panel. 23 July 2019, first day of test + 25,2 %. 24 July 2019 + 28,0 2 25 July 2019 + 26.1% 26 July 2019 + 27,3 % 29 July 2019 + 28,8 8 31 July 2019 + 30,0 % month of July 2019 sum of days 1 to 31 + 6.23% {as only the last few days in July of the coated panel attribute to the to- tal. month of December 2019 + 11.9% It is noted that the absolute difference in the cooler months are in the order of Wh per day, instead of kWh per day during summer time. In this month January 2020 (i.e. the days 1 to 23 January = today) only 30.5 kWh total yield has been achieved so far (see IMG 6360, Jan. 2020 to 23-1 + 12.1%). So even during gloomy weather conditions today, this has no negative impact on the coated panel's relative yield, although that would be expected, as an extra layer of coating is ap- plied.
In summary, there hasn't been a day, in all those days of monitoring, that our panel 1.1.6 performed less than the con- trol panel 1.1.2, which is opposite of the situation before coating.
The figures are further detailed in the description and example below.
The following section is aimed at supporting the search, which may be considered as embodiments of the present inven- tion, of which the subsequent section is considered to be a translation into Dutch.
1. Improved PV-panel comprising at least one solar cell (100), the solar cell comprising a PV-material (10), on a side for receiving light a transpar- ent protection layer {11), such as a glass layer, charac- terized in a light-to-electricity conversion improving coating (12) on the transparent protection layer (11), wherein the coating comprises a polymer (13), and electrically conductive transparent particles (14) embedded in said polymer (13).
— 9 —
2. Improved PV-panel according to embodiment 1, wherein the coating has a thickness of < 20 um, preferably a thickness of 1-10 pm, more preferably a thickness of 3-8 pum.
3. Improved PV-panel according to any of embodiments 1-2, wherein the polymer is selected from siloxane cross- linked polymers, and urethane polymers, preferably biuret ure- thane polymers, such as polymers with structural formula R3 | sN N N NT NT Ne
U 0 0.” wherein Rl, R2, and R3 are each independently selected from CnHzn (N=C=0)n, wherein ne[2-10], preferably ne[3-8], and where- in me[0-2], with the proviso that at least two of Rl, RZ, and R3 comprise an N=C=0C-nmoiety, and combinations thereof.
4. Improved PV-panel according to any of embodiments 1-3, wherein the electrically conductive transparent particles (14) are selected from optoelectronic materials, preferably from conductive oxides, more preferably mixed oxides, even more preferably mixed tin oxides, mixed tungsten oxides, or mixed zinc oxides, such as indium tin oxide, antimony tin ox- ide, aluminum tin oxide, gallium tin oxide, indium zinc oxide, antimony zinc oxide, aluminum zinc oxide, gallium zinc oxide, preferably doped mixed oxides, from carbon nanotubes, and from graphene.
5. Improved PV-panel according to any of embodiments 1-4, wherein the electrically conductive transparent particles (14) are crystalline, semi-crystalline, or a combination thereof.
6. Improved PV-panel according to any of embodiments 1-5, wherein the electrically conductive transparent particles (14) have a particle size from 40-1000 nm, preferably 60-500 nm, such as 100-300 nm.
7. Improved PV-panel according to any of embodiments 1-6, wherein the coating (12) comprises 60-80 vol.% polymer (13), preferably 70-75 vol.% polymer, and/or 20-40 vol.% par-
- 10 = ticles (14), preferably 23-35 vol.% particles, such as 25-30 vol.%.
8. Improved PV-panel according to any of embodiments 1-7, wherein the coating has a density of 0.98-1.2 gr/cm?, such as 1.05-1.15 gr/cm3.
9. Improved PV-panel according to any of embodiments 1-8, wherein the PV-panel is a refurbished PV-panel.
10. Method of applying a coating to a PV-panel com- prising providing said coating in an aqueous solution, wherein the coating comprises a polymer (13), and electrically conduc- tive transparent particles (14) embedded in said polymer (13), brushing the coating on the PV-panel, and drying said coating, preferably under ambient and dry con- ditions.
11. Method according to embodiment 10, wherein 10-20 gr/m? coating is applied.
12. Method according to embodiment 10 or 11, wherein the coating is dried during 1-24 hours, preferably 2- 12 hours, such as 6-8 hours.
13. Method according to any of embodiments 10-12, wherein the aqueous solution comprises 40-70 vol.% solvent and/or co-solvents, preferably 50-60 vol.%, wherein the sol- vent and/or co-solvent is preferably selected from ketones, such as methyl isobutyl ketone, acetates, such as butyl ace- tate, ethers, such as ethylene glycol mono-butyl ether, water, and combinations thereof, preferably 54-57 vol. % purified wa- ter and/or 1-5 vol. % co-solvent, such as 2-3 vol.% co- solvent, and/or 10-15 vol.% particles, and/or 25-40 vol.% polymer or prepoly- mer.
14. Method for improving PV-yield, comprising apply- ing a method according to any of embodiments 10-13 or provid- ing an improved PV-panel according to any of embodiments 1-9.
Claims (14)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2407521A1 (en) * | 2009-03-11 | 2012-01-18 | Asahi Kasei E-Materials Corporation | Coating composition, coating film, laminate, and process for production of laminate |
| US20140174534A1 (en) * | 2012-12-21 | 2014-06-26 | Solartrack, Llc | Apparatus, systems and methods for collecting and converting solar energy |
| EP3018504A1 (en) * | 2013-07-05 | 2016-05-11 | Kaneka Corporation | Anti-glare film for solar cell module, solar cell module provided with anti-glare film, and method for manufacturing same |
-
2020
- 2020-02-04 NL NL2024826A patent/NL2024826B1/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2407521A1 (en) * | 2009-03-11 | 2012-01-18 | Asahi Kasei E-Materials Corporation | Coating composition, coating film, laminate, and process for production of laminate |
| US20140174534A1 (en) * | 2012-12-21 | 2014-06-26 | Solartrack, Llc | Apparatus, systems and methods for collecting and converting solar energy |
| EP3018504A1 (en) * | 2013-07-05 | 2016-05-11 | Kaneka Corporation | Anti-glare film for solar cell module, solar cell module provided with anti-glare film, and method for manufacturing same |
Non-Patent Citations (1)
| Title |
|---|
| CHEMICAL ABSTRACTS, Columbus, Ohio, US; abstract no. 4035-89-6 |
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