NL2024513A - EUV radiation source and related methods - Google Patents
EUV radiation source and related methods Download PDFInfo
- Publication number
- NL2024513A NL2024513A NL2024513A NL2024513A NL2024513A NL 2024513 A NL2024513 A NL 2024513A NL 2024513 A NL2024513 A NL 2024513A NL 2024513 A NL2024513 A NL 2024513A NL 2024513 A NL2024513 A NL 2024513A
- Authority
- NL
- Netherlands
- Prior art keywords
- radiation
- wavelength
- laser
- nonlinear
- micron
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 602
- 238000000034 method Methods 0.000 title abstract description 122
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 10
- 238000001459 lithography Methods 0.000 claims description 3
- 239000000446 fuel Substances 0.000 abstract description 83
- 238000006243 chemical reaction Methods 0.000 abstract description 74
- 230000003287 optical effect Effects 0.000 abstract description 74
- 230000015572 biosynthetic process Effects 0.000 abstract description 53
- 230000008569 process Effects 0.000 abstract description 46
- 239000007789 gas Substances 0.000 description 78
- 239000013078 crystal Substances 0.000 description 26
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 21
- 230000009286 beneficial effect Effects 0.000 description 20
- 230000036278 prepulse Effects 0.000 description 17
- 238000005286 illumination Methods 0.000 description 16
- 230000002123 temporal effect Effects 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 238000001069 Raman spectroscopy Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 239000003574 free electron Substances 0.000 description 9
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 7
- XBJJRSFLZVLCSE-UHFFFAOYSA-N barium(2+);diborate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]B([O-])[O-].[O-]B([O-])[O-] XBJJRSFLZVLCSE-UHFFFAOYSA-N 0.000 description 6
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 6
- 230000003993 interaction Effects 0.000 description 6
- 230000037361 pathway Effects 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 229910052701 rubidium Inorganic materials 0.000 description 6
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000011149 active material Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 4
- 230000005283 ground state Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- DJHGAFSJWGLOIV-UHFFFAOYSA-K Arsenate3- Chemical compound [O-][As]([O-])([O-])=O DJHGAFSJWGLOIV-UHFFFAOYSA-K 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
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- 229940000489 arsenate Drugs 0.000 description 3
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- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
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- 239000011521 glass Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- X-Ray Techniques (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP19151860 | 2019-01-15 | ||
| EP19164608 | 2019-03-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2024513A true NL2024513A (en) | 2020-08-14 |
Family
ID=69159732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2024513A NL2024513A (en) | 2019-01-15 | 2019-12-19 | EUV radiation source and related methods |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20210114449A (zh) |
| CN (1) | CN113661446A (zh) |
| NL (1) | NL2024513A (zh) |
| WO (1) | WO2020148069A1 (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3911126A1 (en) * | 2020-05-15 | 2021-11-17 | Stichting Nederlandse Wetenschappelijk Onderzoek Instituten | Euv radiation source |
| CN114839843A (zh) * | 2022-07-04 | 2022-08-02 | 上海传芯半导体有限公司 | 一种投影式光刻机的光源结构、投影式光刻机及光刻工艺 |
| CN118039453A (zh) * | 2024-02-05 | 2024-05-14 | 中国科学技术大学 | 一种高光谱纯度的台式化光源 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5100990B2 (ja) * | 2004-10-07 | 2012-12-19 | ギガフォトン株式会社 | 極端紫外光源装置用ドライバーレーザ及びｌｐｐ型極端紫外光源装置 |
| US7326948B2 (en) * | 2005-08-15 | 2008-02-05 | Asml Netherlands B.V. | Beam modifying device, lithographic projection apparatus, method of treating a beam, and device manufacturing method |
| EP3361315A1 (en) * | 2017-02-09 | 2018-08-15 | ASML Netherlands B.V. | Inspection apparatus and method of inspecting structures |
-
2019
- 2019-12-19 CN CN201980094116.7A patent/CN113661446A/zh active Pending
- 2019-12-19 NL NL2024513A patent/NL2024513A/en unknown
- 2019-12-19 KR KR1020217025433A patent/KR20210114449A/ko not_active Application Discontinuation
- 2019-12-19 WO PCT/EP2019/086403 patent/WO2020148069A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020148069A1 (en) | 2020-07-23 |
| KR20210114449A (ko) | 2021-09-23 |
| CN113661446A (zh) | 2021-11-16 |
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