NL2024408B1 - Transparent conductive oxide on a substrate - Google Patents
Transparent conductive oxide on a substrate Download PDFInfo
- Publication number
- NL2024408B1 NL2024408B1 NL2024408A NL2024408A NL2024408B1 NL 2024408 B1 NL2024408 B1 NL 2024408B1 NL 2024408 A NL2024408 A NL 2024408A NL 2024408 A NL2024408 A NL 2024408A NL 2024408 B1 NL2024408 B1 NL 2024408B1
- Authority
- NL
- Netherlands
- Prior art keywords
- transparent conductive
- conductive oxide
- substrate
- doped
- perovskite structure
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000005693 optoelectronics Effects 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 33
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 6
- 229910002929 BaSnO3 Inorganic materials 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 244000191761 Sida cordifolia Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001450 anions Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Non-Insulated Conductors (AREA)
- Photovoltaic Devices (AREA)
Claims (12)
1. Werkwijze voor het vervaardigen van een transparant geleidend oxide op een substraat, die de stappen omvat: a) het verschaffen van een substraat; b) het aanbrengen van een bufferlaag die een materiaal met gelaagde perovskietstructuur omvat op het substraat; c) hetaanbrengen van gedoteerd BaSn0O: op de genoemde laag; waarbij het materiaal met gelaagde perovskietstructuur een roosterconstante van 0,37 tot en met 0,45 nm heeft.
2. Werkwijze volgens conclusie 1, waarbij het substraat een amorf substraat is.
3. Werkwijze volgens conclusie 1 of 2, waarbij het substraat glas is.
4. Werkwijze volgens één van de voorgaande conclusies, waarbij het materiaal met gelaagde perovskietstructuur Ca:Nb30101s.
5. Werkwijze volgens één van de voorgaande conclusies, waarbij BaSn0; is gedoteerd met La.
6. Werkwijze volgens conclusie 5, waarbij het La-gedoteerde BaSn0:; een samenstelling heeft van BaiLaSn0;, en waarbij 0 <x < 0,1.
7. Werkwijze volgens één van de voorgaande conclusies, waarbij stap c) wordt uitgevoerd middels fysieke dampdepositie.
8. Transparant geleidend oxide verkrijgbaar met de werkwijze volgens één van conclusies 1-7.
9. Transparant geleidend oxide volgens conclusie 8, waarbij de dikte van het aangebrachte BaSnO; zodanig wordt afgesteld dat het transparant geleidend oxide een transmissie van 70% of hoger heeft bij een golflengte van 1000 nm.
10. Transparant geleidend oxide volgens conclusie 8 of 9, dat een soortelijke weerstand van 10-2 Qcm of minder heeft.
11. Zonnecel die een transparant geleidend oxide volgens één van conclusies 8-10 omvat.
12. Toepassing van een transparant geleidend oxide volgens één van conclusies 8-10 in een opto-elektronisch apparaat.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2024408A NL2024408B1 (en) | 2019-12-09 | 2019-12-09 | Transparent conductive oxide on a substrate |
| PCT/NL2020/050768 WO2021118347A1 (en) | 2019-12-09 | 2020-12-09 | Transparent conductive oxide on a substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2024408A NL2024408B1 (en) | 2019-12-09 | 2019-12-09 | Transparent conductive oxide on a substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2024408B1 true NL2024408B1 (en) | 2021-08-31 |
Family
ID=69187866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2024408A NL2024408B1 (en) | 2019-12-09 | 2019-12-09 | Transparent conductive oxide on a substrate |
Country Status (2)
| Country | Link |
|---|---|
| NL (1) | NL2024408B1 (nl) |
| WO (1) | WO2021118347A1 (nl) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150048282A1 (en) | 2012-04-05 | 2015-02-19 | Rftron Co., Ltd. | Transparent compound semiconductor and production method therefor |
| US20170271622A1 (en) * | 2016-06-03 | 2017-09-21 | Solar-Tectic, Llc | High efficiency thin film tandem solar cells and other semiconductor devices |
-
2019
- 2019-12-09 NL NL2024408A patent/NL2024408B1/en not_active IP Right Cessation
-
2020
- 2020-12-09 WO PCT/NL2020/050768 patent/WO2021118347A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150048282A1 (en) | 2012-04-05 | 2015-02-19 | Rftron Co., Ltd. | Transparent compound semiconductor and production method therefor |
| US20170271622A1 (en) * | 2016-06-03 | 2017-09-21 | Solar-Tectic, Llc | High efficiency thin film tandem solar cells and other semiconductor devices |
Non-Patent Citations (2)
| Title |
|---|
| JAMES K K ET AL: "Structural and optical properties of La-doped BaSnO3thin films grown by PLD", JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, PERGAMON PRESS, LONDON, GB, vol. 76, 14 August 2014 (2014-08-14), pages 64 - 69, XP029018362, ISSN: 0022-3697, DOI: 10.1016/J.JPCS.2014.07.024 * |
| SHIOGAI JUNICHI ET AL: "Improvement of electron mobility in La:BaSnO3thin films by insertion of an atomically flat insulating (Sr,Ba)SnO3buffer layer", AIP ADVANCES, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 6, no. 6, 7 June 2016 (2016-06-07), XP012208241, DOI: 10.1063/1.4953808 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021118347A1 (en) | 2021-06-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM | Lapsed because of non-payment of the annual fee |
Effective date: 20230101 |