NL2023229B1 - EUV Pellicles - Google Patents
EUV Pellicles Download PDFInfo
- Publication number
- NL2023229B1 NL2023229B1 NL2023229A NL2023229A NL2023229B1 NL 2023229 B1 NL2023229 B1 NL 2023229B1 NL 2023229 A NL2023229 A NL 2023229A NL 2023229 A NL2023229 A NL 2023229A NL 2023229 B1 NL2023229 B1 NL 2023229B1
- Authority
- NL
- Netherlands
- Prior art keywords
- pellicle
- web
- cover layer
- core
- silicon carbide
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 76
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 57
- 239000011162 core material Substances 0.000 claims description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 238000000059 patterning Methods 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910016006 MoSi Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 25
- 239000000463 material Substances 0.000 abstract description 21
- 239000010410 layer Substances 0.000 description 143
- 230000005855 radiation Effects 0.000 description 78
- 239000000758 substrate Substances 0.000 description 21
- 230000003595 spectral effect Effects 0.000 description 19
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 238000005286 illumination Methods 0.000 description 10
- 238000001459 lithography Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000000446 fuel Substances 0.000 description 5
- -1 hydrogen radicals Chemical class 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000012792 core layer Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000002028 premature Effects 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 210000000887 face Anatomy 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920005620 poly(methylsilyne) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP18179320 | 2018-06-22 | ||
| EP18203954 | 2018-11-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2023229A NL2023229A (en) | 2020-01-06 |
| NL2023229B1 true NL2023229B1 (en) | 2020-01-24 |
Family
ID=66776313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2023229A NL2023229B1 (en) | 2018-06-22 | 2019-05-29 | EUV Pellicles |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP3811151A1 (zh) |
| KR (1) | KR20210022001A (zh) |
| CN (1) | CN112334832A (zh) |
| CA (1) | CA3104593A1 (zh) |
| NL (1) | NL2023229B1 (zh) |
| TW (1) | TWI822799B (zh) |
| WO (1) | WO2019243009A1 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7258017B2 (ja) * | 2017-11-10 | 2023-04-14 | エーエスエムエル ネザーランズ ビー．ブイ． | Ｅｕｖペリクル |
| NL2027098B1 (en) * | 2020-01-16 | 2021-10-14 | Asml Netherlands Bv | Pellicle membrane for a lithographic apparatus |
| KR20230112840A (ko) | 2022-01-21 | 2023-07-28 | 한국표준과학연구원 | 펠리클 성능 평가 시스템 및 방법 |
| KR20240127566A (ko) | 2023-02-16 | 2024-08-23 | 한국전자기술연구원 | 나노튜브를 기반으로 하는 극자외선 노광용 펠리클 및 그의 제조 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100479120C (zh) * | 2006-08-23 | 2009-04-15 | 联华电子股份有限公司 | 金属氧化物半导体晶体管及其制造方法 |
| US8198612B2 (en) * | 2008-07-31 | 2012-06-12 | Cymer, Inc. | Systems and methods for heating an EUV collector mirror |
| US20130250260A1 (en) * | 2012-03-23 | 2013-09-26 | Globalfoundries Inc. | Pellicles for use during euv photolithography processes |
| DE102012207141A1 (de) * | 2012-04-27 | 2013-10-31 | Carl Zeiss Laser Optics Gmbh | Verfahren zur Reparatur von optischen Elementen sowie optisches Element |
| US9396990B2 (en) * | 2013-01-31 | 2016-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Capping layer for improved deposition selectivity |
| DE102014218084A1 (de) * | 2014-09-10 | 2014-11-13 | Carl Zeiss Smt Gmbh | Verfahren zur herstellung oxid - basierter deckschichten für hochreflektierende euv - multischichten |
| KR102246875B1 (ko) * | 2014-11-13 | 2021-04-30 | 삼성전자 주식회사 | 그라파이트 층을 갖는 펠리클을 제조하는 방법 |
| US9709884B2 (en) * | 2014-11-26 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV mask and manufacturing method by using the same |
| CA3002702C (en) * | 2015-10-22 | 2022-12-13 | Asml Netherlands B.V. | A method of manufacturing a pellicle for a lithographic apparatus, a pellicle for a lithographic apparatus, a lithographic apparatus, a device manufacturing method, an apparatus for processing a pellicle, and a method for processing a pellicle |
| US9759997B2 (en) * | 2015-12-17 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle assembly and method for advanced lithography |
| KR101813185B1 (ko) * | 2016-06-30 | 2018-01-30 | 삼성전자주식회사 | 포토마스크용 펠리클 및 이를 포함하는 노광 장치 |
-
2019
- 2019-05-29 CN CN201980042099.2A patent/CN112334832A/zh active Pending
- 2019-05-29 EP EP19728916.8A patent/EP3811151A1/en active Pending
- 2019-05-29 CA CA3104593A patent/CA3104593A1/en active Pending
- 2019-05-29 KR KR1020207036942A patent/KR20210022001A/ko not_active Application Discontinuation
- 2019-05-29 WO PCT/EP2019/063895 patent/WO2019243009A1/en active Application Filing
- 2019-05-29 NL NL2023229A patent/NL2023229B1/en active
- 2019-06-19 TW TW108121192A patent/TWI822799B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CA3104593A1 (en) | 2019-12-26 |
| CN112334832A (zh) | 2021-02-05 |
| TWI822799B (zh) | 2023-11-21 |
| TW202010861A (zh) | 2020-03-16 |
| EP3811151A1 (en) | 2021-04-28 |
| WO2019243009A1 (en) | 2019-12-26 |
| NL2023229A (en) | 2020-01-06 |
| KR20210022001A (ko) | 2021-03-02 |
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