NL179833C - METHOD FOR IMPLANTING IONS IN A STEEL SURFACE TO MODIFY THE STRUCTURE OF THE SURFACE - Google Patents
METHOD FOR IMPLANTING IONS IN A STEEL SURFACE TO MODIFY THE STRUCTURE OF THE SURFACEInfo
- Publication number
- NL179833C NL179833C NLAANVRAGE7204711,A NL7204711A NL179833C NL 179833 C NL179833 C NL 179833C NL 7204711 A NL7204711 A NL 7204711A NL 179833 C NL179833 C NL 179833C
- Authority
- NL
- Netherlands
- Prior art keywords
- modify
- implanting ions
- steel
- steel surface
- implanting
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB901371A GB1392811A (en) | 1971-04-07 | 1971-04-07 | Methods for treating steel to modify the structure thereof |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7204711A NL7204711A (en) | 1972-10-10 |
NL179833B NL179833B (en) | 1986-06-16 |
NL179833C true NL179833C (en) | 1986-11-17 |
Family
ID=9863673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7204711,A NL179833C (en) | 1971-04-07 | 1972-04-07 | METHOD FOR IMPLANTING IONS IN A STEEL SURFACE TO MODIFY THE STRUCTURE OF THE SURFACE |
Country Status (6)
Country | Link |
---|---|
US (1) | US3832219A (en) |
DE (1) | DE2216628C2 (en) |
FR (1) | FR2132712B1 (en) |
GB (1) | GB1392811A (en) |
NL (1) | NL179833C (en) |
SE (1) | SE384538B (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3988955A (en) * | 1972-12-14 | 1976-11-02 | Engel Niels N | Coated steel product and process of producing the same |
GB1555802A (en) * | 1976-01-28 | 1979-11-14 | Atomic Energy Authority Uk | Metalworking tool elements |
US4645715A (en) * | 1981-09-23 | 1987-02-24 | Energy Conversion Devices, Inc. | Coating composition and method |
US4640169A (en) * | 1982-01-25 | 1987-02-03 | Westinghouse Electric Corp. | Cemented carbide cutting tools and processes for making and using |
US4486247A (en) * | 1982-06-21 | 1984-12-04 | Westinghouse Electric Corp. | Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof |
US4565710A (en) * | 1984-06-06 | 1986-01-21 | The United States Of America As Represented By The Secretary Of The Navy | Process for producing carbide coatings |
GB8423255D0 (en) * | 1984-09-14 | 1984-10-17 | Atomic Energy Authority Uk | Surface treatment of metals |
US4704168A (en) * | 1984-10-16 | 1987-11-03 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ion-beam nitriding of steels |
US4764394A (en) * | 1987-01-20 | 1988-08-16 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma source ion implantation |
US4915746A (en) * | 1988-08-15 | 1990-04-10 | Welsch Gerhard E | Method of forming high temperature barriers in structural metals to make such metals creep resistant at high homologous temperatures |
DE4238784C1 (en) * | 1992-11-17 | 1994-01-20 | Multi Arc Oberflaechentechnik | Corrosion susceptibility redn. and increasing wear resistance of components made of low-alloy steels - by cleaning component surface and forming diffusive layer by chrome on bombardment in vacuum on diffusion layer |
US6098655A (en) * | 1996-12-03 | 2000-08-08 | Carolina Power & Light Company | Alleviating sticking of normally closed valves in nuclear reactor plants |
US6245161B1 (en) * | 1997-05-12 | 2001-06-12 | Silicon Genesis Corporation | Economical silicon-on-silicon hybrid wafer assembly |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6033974A (en) * | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
US6548382B1 (en) * | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6221740B1 (en) | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
AU6905000A (en) * | 1999-08-10 | 2001-03-05 | Silicon Genesis Corporation | A cleaving process to fabricate multilayered substrates using low implantation doses |
US8187377B2 (en) * | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US9362439B2 (en) * | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
US20100323113A1 (en) * | 2009-06-18 | 2010-12-23 | Ramappa Deepak A | Method to Synthesize Graphene |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE668639C (en) * | 1932-07-20 | 1938-12-07 | Bernhard Berghaus | Process for the annealing of metal objects |
CH342980A (en) * | 1950-11-09 | 1959-12-15 | Berghaus Elektrophysik Anst | Process for the diffusion treatment of pipes made of iron and steel or their alloys |
-
1971
- 1971-04-07 GB GB901371A patent/GB1392811A/en not_active Expired
-
1972
- 1972-03-27 US US00238619A patent/US3832219A/en not_active Expired - Lifetime
- 1972-04-06 FR FR7212086A patent/FR2132712B1/fr not_active Expired
- 1972-04-06 DE DE2216628A patent/DE2216628C2/en not_active Expired
- 1972-04-06 SE SE7204441A patent/SE384538B/en unknown
- 1972-04-07 NL NLAANVRAGE7204711,A patent/NL179833C/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US3832219A (en) | 1974-08-27 |
NL179833B (en) | 1986-06-16 |
FR2132712B1 (en) | 1976-10-29 |
DE2216628A1 (en) | 1972-10-19 |
DE2216628C2 (en) | 1982-07-15 |
GB1392811A (en) | 1975-04-30 |
NL7204711A (en) | 1972-10-10 |
SE384538B (en) | 1976-05-10 |
FR2132712A1 (en) | 1972-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |