NL175652B - Glijschoen voor een spaninrichting van een greppelbouwinrichting. - Google Patents

Glijschoen voor een spaninrichting van een greppelbouwinrichting.

Info

Publication number
NL175652B
NL175652B NLAANVRAGE7714207,A NL175652DA NL175652B NL 175652 B NL175652 B NL 175652B NL 175652D A NL175652D A NL 175652DA NL 175652 B NL175652 B NL 175652B
Authority
NL
Netherlands
Prior art keywords
sliding shoe
handle construction
tensioning device
tensioning
construction device
Prior art date
Application number
NLAANVRAGE7714207,A
Other languages
English (en)
Dutch (nl)
Original Assignee
Krings Josef
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL175652B publication Critical patent/NL175652B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Resistance Heating (AREA)
NLAANVRAGE7714207,A 1952-02-07 Glijschoen voor een spaninrichting van een greppelbouwinrichting. NL175652B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US270370A US2757324A (en) 1952-02-07 1952-02-07 Fabrication of silicon translating devices

Publications (1)

Publication Number Publication Date
NL175652B true NL175652B (nl)

Family

ID=23031071

Family Applications (2)

Application Number Title Priority Date Filing Date
NLAANVRAGE7714207,A NL175652B (nl) 1952-02-07 Glijschoen voor een spaninrichting van een greppelbouwinrichting.
NL91691D NL91691C (da) 1952-02-07

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL91691D NL91691C (da) 1952-02-07

Country Status (7)

Country Link
US (1) US2757324A (da)
AT (1) AT177475B (da)
BE (1) BE517459A (da)
DE (1) DE1027325B (da)
FR (1) FR1070095A (da)
GB (1) GB724930A (da)
NL (2) NL91691C (da)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL191674A (da) * 1953-10-26
BE544843A (da) * 1955-02-25
BE553205A (da) * 1955-03-10
US3065534A (en) * 1955-03-30 1962-11-27 Itt Method of joining a semiconductor to a conductor
DE1040697B (de) * 1955-03-30 1958-10-09 Siemens Ag Verfahren zur Dotierung von Halbleiterkoerpern
US2906932A (en) * 1955-06-13 1959-09-29 Sprague Electric Co Silicon junction diode
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
US2919386A (en) * 1955-11-10 1959-12-29 Hoffman Electronics Corp Rectifier and method of making same
BE562491A (da) * 1956-03-05 1900-01-01
NL235480A (da) * 1956-05-15
DE1218066B (de) * 1956-09-25 1966-06-02 Siemens Ag Herstellung von Zonen unterschiedlichen Leitungstypus in Halbleiterkoerpern unter Anwendung des Legierungsverfahrens
US2878432A (en) * 1956-10-12 1959-03-17 Rca Corp Silicon junction devices
BE559732A (da) * 1956-10-31 1900-01-01
US2985550A (en) * 1957-01-04 1961-05-23 Texas Instruments Inc Production of high temperature alloyed semiconductors
US2893901A (en) * 1957-01-28 1959-07-07 Sprague Electric Co Semiconductor junction
NL224227A (da) * 1957-01-29
DE1282203B (de) * 1957-06-24 1968-11-07 Siemens Ag Verfahren zum Herstellen einer insbesondere auf Strahlung ansprechenden Halbleiterkristall-anordnung mit pn-UEbergang und den pn-UEbergang gegen Feuchtigkeit schuetzender Huelle und danach hergestellte Halbleiteranordnung
BE569023A (da) * 1957-07-01
NL230537A (da) * 1957-08-15 1900-01-01
DE1165755B (de) * 1957-09-26 1964-03-19 Philco Corp Eine Ges Nach Den Verfahren zur Befestigung von Zuleitungen an den Kontaktelektroden von Halbleiterkoerpern und Vorrichtung zur Durchfuehrung des Verfahrens
NL235479A (da) * 1958-02-04 1900-01-01
US2953673A (en) * 1958-04-18 1960-09-20 Bell Telephone Labor Inc Method of joining wires
US2989671A (en) * 1958-05-23 1961-06-20 Pacific Semiconductors Inc Voltage sensitive semiconductor capacitor
NL300609A (da) * 1958-06-14 1967-06-26
NL240107A (da) * 1958-06-14
US3012921A (en) * 1958-08-20 1961-12-12 Philco Corp Controlled jet etching of semiconductor units
NL121500C (da) * 1958-09-02
US3073006A (en) * 1958-09-16 1963-01-15 Westinghouse Electric Corp Method and apparatus for the fabrication of alloyed transistors
US3091849A (en) * 1959-09-14 1963-06-04 Pacific Semiconductors Inc Method of bonding materials
US3127646A (en) * 1959-10-06 1964-04-07 Clevite Corp Alloying fixtures
NL261654A (da) * 1960-02-24
NL261280A (da) * 1960-02-25 1900-01-01
US3025439A (en) * 1960-09-22 1962-03-13 Texas Instruments Inc Mounting for silicon semiconductor device
NL280850A (da) * 1961-07-12 1900-01-01
BE627126A (da) * 1962-01-15 1900-01-01
BE627948A (da) * 1962-02-02
US3235945A (en) * 1962-10-09 1966-02-22 Philco Corp Connection of semiconductor elements to thin film circuits using foil ribbon
US3434828A (en) * 1963-02-01 1969-03-25 Texas Instruments Inc Gold alloy for attaching a lead to a semiconductor body
US3223820A (en) * 1963-03-25 1965-12-14 Matsuura Etsuyuki Method of ohmically connecting filament to semiconducting material
US3617682A (en) * 1969-06-23 1971-11-02 Gen Electric Semiconductor chip bonder
US4485290A (en) * 1982-11-01 1984-11-27 At&T Technologies, Inc. Bonding a workpiece to a body
US4558200A (en) * 1983-08-12 1985-12-10 Eaton Corporation Electrical lead termination
US11189432B2 (en) 2016-10-24 2021-11-30 Indian Institute Of Technology, Guwahati Microfluidic electrical energy harvester

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB625195A (da) *
US2329483A (en) * 1938-05-27 1943-09-14 Int Nickel Co Bearing
US2226944A (en) * 1938-10-27 1940-12-31 Bell Telephone Labor Inc Method of bonding dissimilar metals
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2398449A (en) * 1941-07-09 1946-04-16 Bell Telephone Labor Inc Method of making hermetic seals
US2406310A (en) * 1944-02-11 1946-08-27 Machlett Lab Inc Beryllium brazing
US2646536A (en) * 1946-11-14 1953-07-21 Purdue Research Foundation Rectifier
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
US2627010A (en) * 1948-01-28 1953-01-27 Metals & Controls Corp Apparatus for soldering metal strips
US2534643A (en) * 1948-12-11 1950-12-19 Machlett Lab Inc Method for brazing beryllium
US2685728A (en) * 1949-02-21 1954-08-10 Bell Telephone Labor Inc Translating material and method of manufacture
US2627110A (en) * 1949-04-12 1953-02-03 Gen Electric Method of bonding nickel structures
US2609428A (en) * 1949-08-31 1952-09-02 Rca Corp Base electrodes for semiconductor devices
NL82014C (da) * 1949-11-30
US2654059A (en) * 1951-05-26 1953-09-29 Bell Telephone Labor Inc Semiconductor signal translating device

Also Published As

Publication number Publication date
AT177475B (de) 1954-02-10
DE1027325B (de) 1958-04-03
BE517459A (da)
US2757324A (en) 1956-07-31
GB724930A (en) 1955-02-23
NL91691C (da)
FR1070095A (fr) 1954-07-16

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