NL173579C - Schakeling voorzien van een halfgeleiderinrichting met een negatieve-impedantiekarakteristiek. - Google Patents
Schakeling voorzien van een halfgeleiderinrichting met een negatieve-impedantiekarakteristiek.Info
- Publication number
- NL173579C NL173579C NLAANVRAGE7007747,A NL7007747A NL173579C NL 173579 C NL173579 C NL 173579C NL 7007747 A NL7007747 A NL 7007747A NL 173579 C NL173579 C NL 173579C
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor device
- circuit provided
- impedance characteristics
- negative impedance
- negative
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4157869A JPS4935874B1 (nl) | 1969-05-28 | 1969-05-28 | |
| JP4157769A JPS4935873B1 (nl) | 1969-05-28 | 1969-05-28 | |
| JP4157669A JPS4925631B1 (nl) | 1969-05-28 | 1969-05-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL7007747A NL7007747A (nl) | 1970-12-01 |
| NL173579B NL173579B (nl) | 1983-09-01 |
| NL173579C true NL173579C (nl) | 1984-02-01 |
Family
ID=27290853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NLAANVRAGE7007747,A NL173579C (nl) | 1969-05-28 | 1970-05-28 | Schakeling voorzien van een halfgeleiderinrichting met een negatieve-impedantiekarakteristiek. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3686684A (nl) |
| DE (1) | DE2026376A1 (nl) |
| FR (1) | FR2049131B1 (nl) |
| GB (1) | GB1306970A (nl) |
| NL (1) | NL173579C (nl) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3916428A (en) * | 1973-05-19 | 1975-10-28 | Matsushita Electric Industrial Co Ltd | Semiconductor magneto-resistance element |
| DE2636873A1 (de) * | 1976-08-17 | 1978-02-23 | Siemens Ag | Halbleiterbauelement mit zwei gekreuzten teildioden und mit transistorartigen eigenschaften |
| US4132996A (en) * | 1976-11-08 | 1979-01-02 | General Electric Company | Electric field-controlled semiconductor device |
| US6822267B1 (en) | 1997-08-20 | 2004-11-23 | Advantest Corporation | Signal transmission circuit, CMOS semiconductor device, and circuit board |
| FR2849538A1 (fr) * | 2002-12-27 | 2004-07-02 | St Microelectronics Sa | Composant discret comprenant des diodes hf en serie et a cathode commune |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3158754A (en) * | 1961-10-05 | 1964-11-24 | Ibm | Double injection semiconductor device |
-
1970
- 1970-05-26 US US40539A patent/US3686684A/en not_active Expired - Lifetime
- 1970-05-27 GB GB2548370A patent/GB1306970A/en not_active Expired
- 1970-05-28 FR FR7019594A patent/FR2049131B1/fr not_active Expired
- 1970-05-28 NL NLAANVRAGE7007747,A patent/NL173579C/nl not_active IP Right Cessation
- 1970-05-29 DE DE19702026376 patent/DE2026376A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2026376A1 (de) | 1970-12-03 |
| GB1306970A (en) | 1973-02-14 |
| US3686684A (en) | 1972-08-22 |
| FR2049131A1 (nl) | 1971-03-26 |
| NL173579B (nl) | 1983-09-01 |
| FR2049131B1 (nl) | 1976-07-09 |
| NL7007747A (nl) | 1970-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| V1 | Lapsed because of non-payment of the annual fee |