NL173579C - Schakeling voorzien van een halfgeleiderinrichting met een negatieve-impedantiekarakteristiek. - Google Patents

Schakeling voorzien van een halfgeleiderinrichting met een negatieve-impedantiekarakteristiek.

Info

Publication number
NL173579C
NL173579C NLAANVRAGE7007747,A NL7007747A NL173579C NL 173579 C NL173579 C NL 173579C NL 7007747 A NL7007747 A NL 7007747A NL 173579 C NL173579 C NL 173579C
Authority
NL
Netherlands
Prior art keywords
semiconductor device
circuit provided
impedance characteristics
negative impedance
negative
Prior art date
Application number
NLAANVRAGE7007747,A
Other languages
English (en)
Other versions
NL173579B (nl
NL7007747A (nl
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4157869A external-priority patent/JPS4935874B1/ja
Priority claimed from JP4157769A external-priority patent/JPS4935873B1/ja
Priority claimed from JP4157669A external-priority patent/JPS4925631B1/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL7007747A publication Critical patent/NL7007747A/xx
Publication of NL173579B publication Critical patent/NL173579B/nl
Application granted granted Critical
Publication of NL173579C publication Critical patent/NL173579C/nl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
NLAANVRAGE7007747,A 1969-05-28 1970-05-28 Schakeling voorzien van een halfgeleiderinrichting met een negatieve-impedantiekarakteristiek. NL173579C (nl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4157869A JPS4935874B1 (nl) 1969-05-28 1969-05-28
JP4157769A JPS4935873B1 (nl) 1969-05-28 1969-05-28
JP4157669A JPS4925631B1 (nl) 1969-05-28 1969-05-28

Publications (3)

Publication Number Publication Date
NL7007747A NL7007747A (nl) 1970-12-01
NL173579B NL173579B (nl) 1983-09-01
NL173579C true NL173579C (nl) 1984-02-01

Family

ID=27290853

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7007747,A NL173579C (nl) 1969-05-28 1970-05-28 Schakeling voorzien van een halfgeleiderinrichting met een negatieve-impedantiekarakteristiek.

Country Status (5)

Country Link
US (1) US3686684A (nl)
DE (1) DE2026376A1 (nl)
FR (1) FR2049131B1 (nl)
GB (1) GB1306970A (nl)
NL (1) NL173579C (nl)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916428A (en) * 1973-05-19 1975-10-28 Matsushita Electric Industrial Co Ltd Semiconductor magneto-resistance element
DE2636873A1 (de) * 1976-08-17 1978-02-23 Siemens Ag Halbleiterbauelement mit zwei gekreuzten teildioden und mit transistorartigen eigenschaften
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
US6822267B1 (en) 1997-08-20 2004-11-23 Advantest Corporation Signal transmission circuit, CMOS semiconductor device, and circuit board
FR2849538A1 (fr) * 2002-12-27 2004-07-02 St Microelectronics Sa Composant discret comprenant des diodes hf en serie et a cathode commune

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3158754A (en) * 1961-10-05 1964-11-24 Ibm Double injection semiconductor device

Also Published As

Publication number Publication date
DE2026376A1 (de) 1970-12-03
GB1306970A (en) 1973-02-14
US3686684A (en) 1972-08-22
FR2049131A1 (nl) 1971-03-26
NL173579B (nl) 1983-09-01
FR2049131B1 (nl) 1976-07-09
NL7007747A (nl) 1970-12-01

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee