NL169656B - Omkeertransistor. - Google Patents

Omkeertransistor.

Info

Publication number
NL169656B
NL169656B NL7103605A NL7103605A NL169656B NL 169656 B NL169656 B NL 169656B NL 7103605 A NL7103605 A NL 7103605A NL 7103605 A NL7103605 A NL 7103605A NL 169656 B NL169656 B NL 169656B
Authority
NL
Netherlands
Prior art keywords
reverse transistor
transistor
reverse
Prior art date
Application number
NL7103605A
Other languages
English (en)
Other versions
NL169656C (nl
NL7103605A (nl
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of NL7103605A publication Critical patent/NL7103605A/xx
Publication of NL169656B publication Critical patent/NL169656B/nl
Application granted granted Critical
Publication of NL169656C publication Critical patent/NL169656C/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/096Lateral transistor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
NLAANVRAGE7103605,A 1970-04-20 1971-03-18 Omkeertransistor. NL169656C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2981470A 1970-04-20 1970-04-20

Publications (3)

Publication Number Publication Date
NL7103605A NL7103605A (nl) 1971-10-22
NL169656B true NL169656B (nl) 1982-03-01
NL169656C NL169656C (nl) 1982-08-02

Family

ID=21851020

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7103605,A NL169656C (nl) 1970-04-20 1971-03-18 Omkeertransistor.

Country Status (7)

Country Link
US (1) US3657612A (nl)
JP (1) JPS50544B1 (nl)
CA (1) CA922816A (nl)
CH (1) CH513517A (nl)
DE (1) DE2116106C2 (nl)
GB (1) GB1329496A (nl)
NL (1) NL169656C (nl)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7107040A (nl) * 1971-05-22 1972-11-24
NL166156C (nl) * 1971-05-22 1981-06-15 Philips Nv Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.
US3766449A (en) * 1972-03-27 1973-10-16 Ferranti Ltd Transistors
US3964089A (en) * 1972-09-21 1976-06-15 Bell Telephone Laboratories, Incorporated Junction transistor with linearly graded impurity concentration in the high resistivity portion of its collector zone
DE2262297C2 (de) * 1972-12-20 1985-11-28 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau
US3959812A (en) * 1973-02-26 1976-05-25 Hitachi, Ltd. High-voltage semiconductor integrated circuit
US3866066A (en) * 1973-07-16 1975-02-11 Bell Telephone Labor Inc Power supply distribution for integrated circuits
US3959809A (en) * 1974-05-10 1976-05-25 Signetics Corporation High inverse gain transistor
US4199775A (en) * 1974-09-03 1980-04-22 Bell Telephone Laboratories, Incorporated Integrated circuit and method for fabrication thereof
US4097888A (en) * 1975-10-15 1978-06-27 Signetics Corporation High density collector-up structure
JPS5317081A (en) * 1976-07-30 1978-02-16 Sharp Corp Production of i2l device
US4881111A (en) * 1977-02-24 1989-11-14 Harris Corporation Radiation hard, high emitter-base breakdown bipolar transistor
JPS544444U (nl) * 1977-06-13 1979-01-12

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3253197A (en) * 1962-06-21 1966-05-24 Amelco Inc Transistor having a relatively high inverse alpha
NL297002A (nl) * 1962-08-23 1900-01-01
NL297821A (nl) * 1962-10-08
US3338758A (en) * 1964-12-31 1967-08-29 Fairchild Camera Instr Co Surface gradient protected high breakdown junctions
US3502951A (en) * 1968-01-02 1970-03-24 Singer Co Monolithic complementary semiconductor device

Also Published As

Publication number Publication date
JPS50544B1 (nl) 1975-01-09
CH513517A (de) 1971-09-30
US3657612A (en) 1972-04-18
NL169656C (nl) 1982-08-02
GB1329496A (en) 1973-09-12
CA922816A (en) 1973-03-13
DE2116106C2 (de) 1983-12-15
DE2116106A1 (de) 1971-11-11
NL7103605A (nl) 1971-10-22

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Legal Events

Date Code Title Description
V2 Lapsed due to non-payment of the last due maintenance fee for the patent application