NL165331C - METHOD FOR MANUFACTURING A FIELD-EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE - Google Patents

METHOD FOR MANUFACTURING A FIELD-EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE

Info

Publication number
NL165331C
NL165331C NL7212627.A NL7212627A NL165331C NL 165331 C NL165331 C NL 165331C NL 7212627 A NL7212627 A NL 7212627A NL 165331 C NL165331 C NL 165331C
Authority
NL
Netherlands
Prior art keywords
manufacturing
field
effect transistor
control electrode
insulated control
Prior art date
Application number
NL7212627.A
Other languages
Dutch (nl)
Other versions
NL7212627A (en
NL165331B (en
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7290071A external-priority patent/JPS4840386A/ja
Priority claimed from JP182472A external-priority patent/JPS4871887A/ja
Priority claimed from JP47003301A external-priority patent/JPS4871976A/ja
Priority claimed from JP47059746A external-priority patent/JPS4921079A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of NL7212627A publication Critical patent/NL7212627A/xx
Publication of NL165331B publication Critical patent/NL165331B/en
Application granted granted Critical
Publication of NL165331C publication Critical patent/NL165331C/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0163—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/20—Diffusion for doping of insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
NL7212627.A 1971-09-18 1972-09-18 METHOD FOR MANUFACTURING A FIELD-EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE NL165331C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7290071A JPS4840386A (en) 1971-09-18 1971-09-18
JP182472A JPS4871887A (en) 1971-12-27 1971-12-27
JP47003301A JPS4871976A (en) 1971-12-28 1971-12-28
JP47059746A JPS4921079A (en) 1972-06-15 1972-06-15

Publications (3)

Publication Number Publication Date
NL7212627A NL7212627A (en) 1973-03-20
NL165331B NL165331B (en) 1980-10-15
NL165331C true NL165331C (en) 1981-03-16

Family

ID=27453490

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7212627.A NL165331C (en) 1971-09-18 1972-09-18 METHOD FOR MANUFACTURING A FIELD-EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE

Country Status (4)

Country Link
DE (1) DE2245165A1 (en)
FR (1) FR2153004B1 (en)
GB (1) GB1379838A (en)
NL (1) NL165331C (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1039154B (en) * 1974-08-12 1979-12-10 Ibm IMPROVEMENT IN MANUFACTURING PROCESSES OF DEVICES USING SEMICONDUCTOR PARTICULARLY MOS STRUCTURES
NL7710635A (en) * 1977-09-29 1979-04-02 Philips Nv METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE.

Also Published As

Publication number Publication date
FR2153004A1 (en) 1973-04-27
NL7212627A (en) 1973-03-20
FR2153004B1 (en) 1977-04-01
GB1379838A (en) 1975-01-08
DE2245165A1 (en) 1973-04-26
NL165331B (en) 1980-10-15

Similar Documents

Publication Publication Date Title
NL175772C (en) FIELD EFFECT MEMORY TRANSISTOR WITH INSULATED STEERING ELECTRODE SEPARATED BY A COMPOSITE INSULATION LAYER FROM THE CHANNEL ZONE.
NL160512C (en) METHOD FOR MANUFACTURING AN EXTENSION PLATE.
NL186355B (en) METHOD FOR MANUFACTURING A FIELD-EFFECT TRANSISTOR WITH INSULATED GATE FROM A FEW COMPLEMENTARY TRANSISTORS
BE785513A (en) INTERNAL INSULATION FOR AN OVEN.
NL7612850A (en) METHOD FOR MANUFACTURING A TRANSISTOR.
NL185882C (en) METHOD FOR MANUFACTURING A FIELD-EFFECT TRANSISTOR
NL151839B (en) PROCEDURE FOR MANUFACTURING A FIELD EFFECT TRANSISTOR WITH AN INSULATED CONTROL ELECTRODE AS WELL AS A TRANSISTOR MANUFACTURED THEREFORE.
NL171912C (en) METHOD FOR MANUFACTURING IRON FOIL
NL161306C (en) METHOD FOR MANUFACTURING FIELD-EFFECT TRANSFORMERS WITH INSULATED CONTROL ELECTRODES
NL162157B (en) METHOD FOR COVERING A CONCRETE SUBSTRATE.
NL185483C (en) METHOD FOR MANUFACTURING A SEMICONDUCTOR UNIT WITH FIELD EFFECT TRANSISTORS WITH INSULATED GATE OF THE DEPLOYMENT AND ENRICHMENT TYPE.
NL173662C (en) ELECTRODE FOR ELECTROCHEMICAL PROCESSES.
NL164098C (en) METHOD FOR MANUFACTURING AN ELECTRODE FOR ELECTROCHEMICAL PROCESSES
NL159532B (en) PROCEDURE FOR MANUFACTURING AN INSULATED CONTROL ELECTROD FIELD EFFECT TRANSISTOR OF THE ENRICHMENT TYPE AND A FIELD EFFECT TRANSISTOR MADE BY THIS PROCESS.
NL162790C (en) METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTORS WITH INSULATED CONTROL ELECTRODES
NL160988C (en) SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE.
NL145730B (en) ELECTRICAL CHAIN EQUIPPED WITH A FIELD EFFECT TRANSISTOR WITH INSULATED GATE ELECTRODE, AND A PROCESS FOR MANUFACTURING A FIELD EFFECT TRANSISTOR AND A FIELD EFFECT TRANSISTOR MANUFACTURED ACCORDING TO THIS PROCESS.
NL164944C (en) METHOD FOR MANUFACTURING AN INSULATED PIPE
NL7506288A (en) COMPLEMENTARY FIELD EFFECT TRANSISTOR SYSTEM WITH INSULATED GATE ELECTRODE.
NL165331C (en) METHOD FOR MANUFACTURING A FIELD-EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE
NL162420B (en) METHOD OF COVERING A CONDUCTIVE SUBSTRATE.
NL168024C (en) METHOD FOR MANUFACTURING A ROOF COVERING ELEMENT, AND AN APPARATUS FOR APPLYING THIS METHOD
NL170023C (en) METHOD FOR MANUFACTURING ORE MARKS
NL7510942A (en) FET WITH FLOATING INSULATED GATE.
NL172083C (en) ELECTRODE FOR ELECTROCHEMICAL CONVERSIONS.

Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee