NL164706C - Halfgeleiderelement omvattende een halfgeleiderlichaam met ten minste drie op elkaar volgende zones van afwisselend tegengesteld geleidingstype en een in de middelste zone gevormde ringzone welke elektrisch is verbonden met een van de aan de middelste zone grenzende andere zones. - Google Patents
Halfgeleiderelement omvattende een halfgeleiderlichaam met ten minste drie op elkaar volgende zones van afwisselend tegengesteld geleidingstype en een in de middelste zone gevormde ringzone welke elektrisch is verbonden met een van de aan de middelste zone grenzende andere zones.Info
- Publication number
- NL164706C NL164706C NL6914586A NL6914586A NL164706C NL 164706 C NL164706 C NL 164706C NL 6914586 A NL6914586 A NL 6914586A NL 6914586 A NL6914586 A NL 6914586A NL 164706 C NL164706 C NL 164706C
- Authority
- NL
- Netherlands
- Prior art keywords
- zone
- semi
- conduction
- conductor
- constructed
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19681789026 DE1789026C2 (de) | 1968-09-25 | Halbleiterbauelement mit mindestens drei aufeinanderfolgenden Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps |
Publications (3)
Publication Number | Publication Date |
---|---|
NL6914586A NL6914586A (nl) | 1970-03-31 |
NL164706B NL164706B (nl) | 1980-08-15 |
NL164706C true NL164706C (nl) | 1981-01-15 |
Family
ID=5706764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6914586A NL164706C (nl) | 1968-09-25 | 1969-09-25 | Halfgeleiderelement omvattende een halfgeleiderlichaam met ten minste drie op elkaar volgende zones van afwisselend tegengesteld geleidingstype en een in de middelste zone gevormde ringzone welke elektrisch is verbonden met een van de aan de middelste zone grenzende andere zones. |
Country Status (4)
Country | Link |
---|---|
ES (1) | ES371849A1 (nl) |
FR (1) | FR2018859B1 (nl) |
GB (1) | GB1250070A (nl) |
NL (1) | NL164706C (nl) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1500047A (fr) * | 1966-06-15 | 1967-11-03 | Comp Generale Electricite | Détecteur de lumière à semiconducteurs |
-
1969
- 1969-09-18 GB GB1250070D patent/GB1250070A/en not_active Expired
- 1969-09-24 ES ES371849A patent/ES371849A1/es not_active Expired
- 1969-09-25 NL NL6914586A patent/NL164706C/nl not_active IP Right Cessation
- 1969-09-25 FR FR6932708A patent/FR2018859B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1250070A (nl) | 1971-10-20 |
DE1789026B1 (de) | 1971-06-03 |
NL6914586A (nl) | 1970-03-31 |
FR2018859B1 (nl) | 1974-03-15 |
NL164706B (nl) | 1980-08-15 |
FR2018859A1 (nl) | 1970-06-26 |
ES371849A1 (es) | 1971-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V1 | Lapsed because of non-payment of the annual fee |