NL164706C - Halfgeleiderelement omvattende een halfgeleiderlichaam met ten minste drie op elkaar volgende zones van afwisselend tegengesteld geleidingstype en een in de middelste zone gevormde ringzone welke elektrisch is verbonden met een van de aan de middelste zone grenzende andere zones. - Google Patents

Halfgeleiderelement omvattende een halfgeleiderlichaam met ten minste drie op elkaar volgende zones van afwisselend tegengesteld geleidingstype en een in de middelste zone gevormde ringzone welke elektrisch is verbonden met een van de aan de middelste zone grenzende andere zones.

Info

Publication number
NL164706C
NL164706C NL6914586A NL6914586A NL164706C NL 164706 C NL164706 C NL 164706C NL 6914586 A NL6914586 A NL 6914586A NL 6914586 A NL6914586 A NL 6914586A NL 164706 C NL164706 C NL 164706C
Authority
NL
Netherlands
Prior art keywords
zone
semi
conduction
conductor
constructed
Prior art date
Application number
NL6914586A
Other languages
English (en)
Other versions
NL6914586A (nl
NL164706B (nl
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681789026 external-priority patent/DE1789026C2/de
Application filed by Itt filed Critical Itt
Publication of NL6914586A publication Critical patent/NL6914586A/xx
Publication of NL164706B publication Critical patent/NL164706B/nl
Application granted granted Critical
Publication of NL164706C publication Critical patent/NL164706C/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NL6914586A 1968-09-25 1969-09-25 Halfgeleiderelement omvattende een halfgeleiderlichaam met ten minste drie op elkaar volgende zones van afwisselend tegengesteld geleidingstype en een in de middelste zone gevormde ringzone welke elektrisch is verbonden met een van de aan de middelste zone grenzende andere zones. NL164706C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681789026 DE1789026C2 (de) 1968-09-25 Halbleiterbauelement mit mindestens drei aufeinanderfolgenden Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps

Publications (3)

Publication Number Publication Date
NL6914586A NL6914586A (nl) 1970-03-31
NL164706B NL164706B (nl) 1980-08-15
NL164706C true NL164706C (nl) 1981-01-15

Family

ID=5706764

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6914586A NL164706C (nl) 1968-09-25 1969-09-25 Halfgeleiderelement omvattende een halfgeleiderlichaam met ten minste drie op elkaar volgende zones van afwisselend tegengesteld geleidingstype en een in de middelste zone gevormde ringzone welke elektrisch is verbonden met een van de aan de middelste zone grenzende andere zones.

Country Status (4)

Country Link
ES (1) ES371849A1 (nl)
FR (1) FR2018859B1 (nl)
GB (1) GB1250070A (nl)
NL (1) NL164706C (nl)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1500047A (fr) * 1966-06-15 1967-11-03 Comp Generale Electricite Détecteur de lumière à semiconducteurs

Also Published As

Publication number Publication date
GB1250070A (nl) 1971-10-20
DE1789026B1 (de) 1971-06-03
NL6914586A (nl) 1970-03-31
FR2018859B1 (nl) 1974-03-15
NL164706B (nl) 1980-08-15
FR2018859A1 (nl) 1970-06-26
ES371849A1 (es) 1971-11-16

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Legal Events

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V1 Lapsed because of non-payment of the annual fee