NL163367B - METHOD FOR SELLING A LOW DIELECTRIC MATERIAL WITH ADJUSTABLE PHYSICAL PROPERTIES BY HIGH-FREQUENCY SPRAYING, AND APPARATUS FOR APPLICATION THEREOF - Google Patents

METHOD FOR SELLING A LOW DIELECTRIC MATERIAL WITH ADJUSTABLE PHYSICAL PROPERTIES BY HIGH-FREQUENCY SPRAYING, AND APPARATUS FOR APPLICATION THEREOF

Info

Publication number
NL163367B
NL163367B NL6812114.A NL6812114A NL163367B NL 163367 B NL163367 B NL 163367B NL 6812114 A NL6812114 A NL 6812114A NL 163367 B NL163367 B NL 163367B
Authority
NL
Netherlands
Prior art keywords
selling
application
physical properties
dielectric material
low dielectric
Prior art date
Application number
NL6812114.A
Other languages
Dutch (nl)
Other versions
NL163367C (en
NL6812114A (en
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of NL6812114A publication Critical patent/NL6812114A/xx
Publication of NL163367B publication Critical patent/NL163367B/en
Application granted granted Critical
Publication of NL163367C publication Critical patent/NL163367C/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
NL6812114.A 1967-09-15 1968-08-26 METHOD FOR SELLING A LOW DIELECTRIC MATERIAL WITH ADJUSTABLE PHYSICAL PROPERTIES BY HIGH-FREQUENCY SPRAYING, AND APPARATUS FOR APPLICATION THEREOF NL163367C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66811467A 1967-09-15 1967-09-15

Publications (3)

Publication Number Publication Date
NL6812114A NL6812114A (en) 1969-03-18
NL163367B true NL163367B (en) 1980-03-17
NL163367C NL163367C (en) 1980-08-15

Family

ID=24681074

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6812114.A NL163367C (en) 1967-09-15 1968-08-26 METHOD FOR SELLING A LOW DIELECTRIC MATERIAL WITH ADJUSTABLE PHYSICAL PROPERTIES BY HIGH-FREQUENCY SPRAYING, AND APPARATUS FOR APPLICATION THEREOF

Country Status (7)

Country Link
US (1) US3617459A (en)
CH (1) CH499628A (en)
DE (1) DE1790094B1 (en)
FR (1) FR1586445A (en)
GB (1) GB1181560A (en)
NL (1) NL163367C (en)
SE (1) SE359719B (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767551A (en) * 1971-11-01 1973-10-23 Varian Associates Radio frequency sputter apparatus and method
US3860507A (en) * 1972-11-29 1975-01-14 Rca Corp Rf sputtering apparatus and method
GB1485266A (en) * 1973-11-20 1977-09-08 Atomic Energy Authority Uk Storage of material
US4131533A (en) * 1977-12-30 1978-12-26 International Business Machines Corporation RF sputtering apparatus having floating anode shield
US4268374A (en) * 1979-08-09 1981-05-19 Bell Telephone Laboratories, Incorporated High capacity sputter-etching apparatus
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
JPS6358834A (en) * 1986-08-27 1988-03-14 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Sputtering apparatus
US4818359A (en) * 1986-08-27 1989-04-04 International Business Machines Corporation Low contamination RF sputter deposition apparatus
US4802968A (en) * 1988-01-29 1989-02-07 International Business Machines Corporation RF plasma processing apparatus
DE3821207A1 (en) * 1988-06-23 1989-12-28 Leybold Ag ARRANGEMENT FOR COATING A SUBSTRATE WITH DIELECTRICS
US5946013A (en) * 1992-12-22 1999-08-31 Canon Kabushiki Kaisha Ink jet head having a protective layer with a controlled argon content
DE4301188C2 (en) * 1993-01-19 2001-05-31 Leybold Ag Device for coating or etching substrates
DE4301189C2 (en) * 1993-01-19 2000-12-14 Leybold Ag Device for coating substrates
US5849372A (en) * 1993-09-17 1998-12-15 Isis Innovation Limited RF plasma reactor and methods of generating RF plasma
WO1996034124A1 (en) * 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
EP0774772A1 (en) * 1995-11-17 1997-05-21 Applied Materials, Inc. Methods for physically etching silicon electrically conducting surfaces
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US6478924B1 (en) 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
US6730609B2 (en) * 2001-10-09 2004-05-04 Micron Technology, Inc. Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device
US6843880B2 (en) * 2002-05-24 2005-01-18 International Business Machines Corporation Enhanced endpoint detection for wet etch process control
US7767056B2 (en) * 2003-01-14 2010-08-03 Canon Anelva Corporation High-frequency plasma processing apparatus
JP4326895B2 (en) * 2003-09-25 2009-09-09 キヤノンアネルバ株式会社 Sputtering equipment
US8052799B2 (en) * 2006-10-12 2011-11-08 International Business Machines Corporation By-product collecting processes for cleaning processes
JP4317888B2 (en) * 2007-08-31 2009-08-19 富士フイルム株式会社 Sputtering method and sputtering apparatus
US8557088B2 (en) * 2009-02-19 2013-10-15 Fujifilm Corporation Physical vapor deposition with phase shift
US8540851B2 (en) * 2009-02-19 2013-09-24 Fujifilm Corporation Physical vapor deposition with impedance matching network
US8182662B2 (en) * 2009-03-27 2012-05-22 Sputtering Components, Inc. Rotary cathode for magnetron sputtering apparatus
JP5596402B2 (en) * 2010-04-19 2014-09-24 株式会社日立ハイテクノロジーズ Analysis device, ionization device, and analysis method
US10964590B2 (en) * 2017-11-15 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Contact metallization process
US10790466B2 (en) * 2018-12-11 2020-09-29 Feng-wen Yen In-line system for mass production of organic optoelectronic device and manufacturing method using the same system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL136984C (en) * 1964-06-04
US3451917A (en) * 1966-01-10 1969-06-24 Bendix Corp Radio frequency sputtering apparatus
US3461054A (en) * 1966-03-24 1969-08-12 Bell Telephone Labor Inc Cathodic sputtering from a cathodically biased target electrode having an rf potential superimposed on the cathodic bias

Also Published As

Publication number Publication date
SE359719B (en) 1973-09-03
FR1586445A (en) 1970-02-20
CH499628A (en) 1970-11-30
NL163367C (en) 1980-08-15
NL6812114A (en) 1969-03-18
GB1181560A (en) 1970-02-18
DE1790094B1 (en) 1972-02-03
US3617459A (en) 1971-11-02

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee