NL160436B - Halfgeleiderinrichting voor het opwekken en uitzenden van elektromagnetische straling. - Google Patents
Halfgeleiderinrichting voor het opwekken en uitzenden van elektromagnetische straling.Info
- Publication number
- NL160436B NL160436B NL7105613.A NL7105613A NL160436B NL 160436 B NL160436 B NL 160436B NL 7105613 A NL7105613 A NL 7105613A NL 160436 B NL160436 B NL 160436B
- Authority
- NL
- Netherlands
- Prior art keywords
- generating
- semiconductor device
- electromagnetic radiation
- emitting electromagnetic
- emitting
- Prior art date
Links
- 230000005670 electromagnetic radiation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3370570A | 1970-05-01 | 1970-05-01 | |
US30721972A | 1972-11-17 | 1972-11-17 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7105613A NL7105613A (nl) | 1971-11-03 |
NL160436B true NL160436B (nl) | 1979-05-15 |
NL160436C NL160436C (nl) | 1979-10-15 |
Family
ID=26710031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7105613.A NL160436C (nl) | 1970-05-01 | 1971-04-26 | Halfgeleiderinrichting voor het opwekken en uitzenden van elektromagnetische straling. |
Country Status (7)
Country | Link |
---|---|
US (2) | US3758875A (nl) |
BE (1) | BE766335A (nl) |
CH (1) | CH527543A (nl) |
DE (1) | DE2120464B2 (nl) |
FR (1) | FR2091009A5 (nl) |
GB (1) | GB1342767A (nl) |
NL (1) | NL160436C (nl) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3691476A (en) * | 1970-12-31 | 1972-09-12 | Bell Telephone Labor Inc | Double heterostructure laser diodes |
US3920491A (en) * | 1973-11-08 | 1975-11-18 | Nippon Electric Co | Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region |
USRE29395E (en) * | 1971-07-30 | 1977-09-13 | Nippon Electric Company, Limited | Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region |
USRE29866E (en) * | 1971-07-30 | 1978-12-19 | Nippon Electric Company, Limited | Double heterostructure stripe geometry semiconductor laser device |
US3993964A (en) * | 1974-07-26 | 1976-11-23 | Nippon Electric Company, Ltd. | Double heterostructure stripe geometry semiconductor laser device |
US4142160A (en) * | 1972-03-13 | 1979-02-27 | Hitachi, Ltd. | Hetero-structure injection laser |
JPS5310840B2 (nl) * | 1972-05-04 | 1978-04-17 | ||
US3824493A (en) * | 1972-09-05 | 1974-07-16 | Bell Telephone Labor Inc | Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror |
US4034311A (en) * | 1973-02-26 | 1977-07-05 | Matsushita Electronics Corporation | Semiconductor laser |
US3893044A (en) * | 1973-04-12 | 1975-07-01 | Ibm | Laser device having enclosed laser cavity |
US3855607A (en) * | 1973-05-29 | 1974-12-17 | Rca Corp | Semiconductor injection laser with reduced divergence of emitted beam |
JPS5751276B2 (nl) * | 1973-10-23 | 1982-11-01 | ||
US3883888A (en) * | 1973-11-12 | 1975-05-13 | Rca Corp | Efficiency light emitting diode |
FR2251104B1 (nl) * | 1973-11-14 | 1978-08-18 | Siemens Ag | |
US3838359A (en) * | 1973-11-23 | 1974-09-24 | Bell Telephone Labor Inc | Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode |
US3896473A (en) * | 1973-12-04 | 1975-07-22 | Bell Telephone Labor Inc | Gallium arsenide schottky barrier avalance diode array |
US3883821A (en) * | 1974-01-17 | 1975-05-13 | Bell Telephone Labor Inc | Single transverse mode operation in double heterostructure junction lasers having an active layer of nonuniform thickness |
US3993963A (en) * | 1974-06-20 | 1976-11-23 | Bell Telephone Laboratories, Incorporated | Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same |
US4023993A (en) * | 1974-08-22 | 1977-05-17 | Xerox Corporation | Method of making an electrically pumped solid-state distributed feedback laser |
US3981023A (en) * | 1974-09-16 | 1976-09-14 | Northern Electric Company Limited | Integral lens light emitting diode |
US3962714A (en) * | 1974-09-19 | 1976-06-08 | Northern Electric Company Limited | Semiconductor optical modulator |
US4006432A (en) * | 1974-10-15 | 1977-02-01 | Xerox Corporation | Integrated grating output coupler in diode lasers |
GB1482936A (en) * | 1974-10-29 | 1977-08-17 | Standard Telephones Cables Ltd | Semiconductor lasers |
US4038106A (en) * | 1975-04-30 | 1977-07-26 | Rca Corporation | Four-layer trapatt diode and method for making same |
US4023062A (en) * | 1975-09-25 | 1977-05-10 | Rca Corporation | Low beam divergence light emitting diode |
USRE33671E (en) * | 1978-04-24 | 1991-08-20 | At&T Bell Laboratories | Method of making high mobility multilayered heterojunction device employing modulated doping |
US4300107A (en) * | 1979-07-18 | 1981-11-10 | Bell Telephone Laboratories, Incorporated | Trap doped laser combined with photodetector |
US4305048A (en) * | 1979-10-29 | 1981-12-08 | Bell Telephone Laboratories, Incorporated | Mode stabilized semiconductor laser |
US4504952A (en) * | 1982-06-01 | 1985-03-12 | At&T Bell Laboratories | Stripe-guide TJS laser |
US4689125A (en) * | 1982-09-10 | 1987-08-25 | American Telephone & Telegraph Co., At&T Bell Labs | Fabrication of cleaved semiconductor lasers |
CA1267716A (en) * | 1984-02-23 | 1990-04-10 | Frederick W. Scholl | Edge-emitting light emitting diode |
US4639999A (en) * | 1984-11-02 | 1987-02-03 | Xerox Corporation | High resolution, high efficiency I.R. LED printing array fabrication method |
US4948960A (en) * | 1988-09-20 | 1990-08-14 | The University Of Delaware | Dual mode light emitting diode/detector diode for optical fiber transmission lines |
JP2650744B2 (ja) * | 1988-12-28 | 1997-09-03 | シャープ株式会社 | 発光ダイオード |
US5091799A (en) * | 1990-10-31 | 1992-02-25 | The United States Of America As Represented By The Secretary Of The Navy | Buried heterostructure laser modulator |
US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
WO1996021251A1 (en) * | 1995-01-06 | 1996-07-11 | President And Fellows Of Harvard College | Minority carrier device |
DE19537542A1 (de) * | 1995-10-09 | 1997-04-10 | Telefunken Microelectron | Lichtemittierende Diode |
US20060226440A1 (en) * | 2003-09-04 | 2006-10-12 | Pan Janet L | Use of deep-level transitions in semiconductor devices |
WO2021044012A1 (en) | 2019-09-05 | 2021-03-11 | INSERM (Institut National de la Santé et de la Recherche Médicale) | Method of treatment and pronostic of acute myeloid leukemia |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1047301A (nl) * | 1963-03-22 | |||
US3309553A (en) * | 1963-08-16 | 1967-03-14 | Varian Associates | Solid state radiation emitters |
DE1489517A1 (de) * | 1965-07-07 | 1969-05-14 | Siemens Ag | Lumineszenzdiode mit einem A?-Halbleiter-Einkristall und einem durch Legieren hergestellten ebenen pn-UEbergang |
DE1257965B (de) * | 1966-01-14 | 1968-01-04 | Siemens Ag | AIIIBA-Lumineszenzdiode, insbesondere auf GaAs-Basis, mit hoher Lichtausbeute |
US3501679A (en) * | 1967-02-27 | 1970-03-17 | Nippon Electric Co | P-n junction type light-emitting semiconductor |
DE1949575B2 (de) * | 1968-10-11 | 1980-03-27 | Western Electric Co., Inc., New York, N.Y. (V.St.A.) | Heterostruktur-Halbleiterlaserdiode |
JPS5141318B1 (nl) * | 1969-04-01 | 1976-11-09 |
-
1970
- 1970-05-01 US US00033705A patent/US3758875A/en not_active Expired - Lifetime
-
1971
- 1971-04-26 NL NL7105613.A patent/NL160436C/nl not_active IP Right Cessation
- 1971-04-27 DE DE2120464A patent/DE2120464B2/de not_active Ceased
- 1971-04-27 BE BE766335A patent/BE766335A/xx not_active IP Right Cessation
- 1971-04-27 GB GB1153671*[A patent/GB1342767A/en not_active Expired
- 1971-04-30 FR FR7115601A patent/FR2091009A5/fr not_active Expired
- 1971-04-30 CH CH642371A patent/CH527543A/de not_active IP Right Cessation
-
1972
- 1972-11-17 US US00307219A patent/US3801928A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
NL160436C (nl) | 1979-10-15 |
NL7105613A (nl) | 1971-11-03 |
DE2120464A1 (de) | 1971-11-18 |
BE766335A (fr) | 1971-10-27 |
GB1342767A (en) | 1974-01-03 |
US3801928A (en) | 1974-04-02 |
CH527543A (de) | 1972-08-31 |
US3758875A (en) | 1973-09-11 |
DE2120464B2 (de) | 1978-11-30 |
FR2091009A5 (nl) | 1972-01-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NL80 | Abbreviated name of patent owner mentioned of already nullified patent |
Owner name: WEST ELECTRIC |
|
V4 | Discontinued because of reaching the maximum lifetime of a patent |