NL146333B - Halfgeleidende veldeffectinrichting met geisoleerde poort. - Google Patents

Halfgeleidende veldeffectinrichting met geisoleerde poort.

Info

Publication number
NL146333B
NL146333B NL656508795A NL6508795A NL146333B NL 146333 B NL146333 B NL 146333B NL 656508795 A NL656508795 A NL 656508795A NL 6508795 A NL6508795 A NL 6508795A NL 146333 B NL146333 B NL 146333B
Authority
NL
Netherlands
Prior art keywords
field effect
effect device
insulated gate
semiconductive
semiconductive field
Prior art date
Application number
NL656508795A
Other languages
English (en)
Dutch (nl)
Other versions
NL6508795A (member.php
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL6508795A publication Critical patent/NL6508795A/xx
Publication of NL146333B publication Critical patent/NL146333B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
NL656508795A 1964-07-09 1965-07-08 Halfgeleidende veldeffectinrichting met geisoleerde poort. NL146333B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US381501A US3334281A (en) 1964-07-09 1964-07-09 Stabilizing coatings for semiconductor devices

Publications (2)

Publication Number Publication Date
NL6508795A NL6508795A (member.php) 1966-01-10
NL146333B true NL146333B (nl) 1975-06-16

Family

ID=23505280

Family Applications (1)

Application Number Title Priority Date Filing Date
NL656508795A NL146333B (nl) 1964-07-09 1965-07-08 Halfgeleidende veldeffectinrichting met geisoleerde poort.

Country Status (7)

Country Link
US (2) US3334281A (member.php)
BR (1) BR6571096D0 (member.php)
DE (1) DE1514359B1 (member.php)
ES (1) ES315030A1 (member.php)
GB (1) GB1079168A (member.php)
NL (1) NL146333B (member.php)
SE (1) SE322843B (member.php)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3400308A (en) * 1965-06-22 1968-09-03 Rca Corp Metallic contacts for semiconductor devices
US3440496A (en) * 1965-07-20 1969-04-22 Hughes Aircraft Co Surface-protected semiconductor devices and methods of manufacturing
GB1165575A (en) * 1966-01-03 1969-10-01 Texas Instruments Inc Semiconductor Device Stabilization.
GB1187611A (en) * 1966-03-23 1970-04-08 Matsushita Electronics Corp Method of manufacturing Semiconductors Device
US3465209A (en) * 1966-07-07 1969-09-02 Rca Corp Semiconductor devices and methods of manufacture thereof
US3474310A (en) * 1967-02-03 1969-10-21 Hitachi Ltd Semiconductor device having a sulfurtreated silicon compound thereon and a method of making the same
JPS4817792B1 (member.php) * 1967-03-29 1973-05-31
GB1190893A (en) * 1967-05-04 1970-05-06 Hitachi Ltd A Method of Manufacturing a Semiconductor Device and a Semiconductor Device Obtained Thereby
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
US3544864A (en) * 1967-08-31 1970-12-01 Gen Telephone & Elect Solid state field effect device
US3512057A (en) * 1968-03-21 1970-05-12 Teledyne Systems Corp Semiconductor device with barrier impervious to fast ions and method of making
US3560810A (en) * 1968-08-15 1971-02-02 Ibm Field effect transistor having passivated gate insulator
US3923562A (en) * 1968-10-07 1975-12-02 Ibm Process for producing monolithic circuits
US3657030A (en) * 1970-07-31 1972-04-18 Bell Telephone Labor Inc Technique for masking silicon nitride during phosphoric acid etching
FR2388410A1 (fr) * 1977-04-20 1978-11-17 Thomson Csf Procede de realisation de transistors a effet de champ de type mos, et transistors realises selon un tel procede

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL265382A (member.php) * 1960-03-08
NL267831A (member.php) * 1960-08-17
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
BE636317A (member.php) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
DE1514359B1 (de) 1970-09-24
NL6508795A (member.php) 1966-01-10
BR6571096D0 (pt) 1973-05-15
ES315030A1 (es) 1966-02-01
GB1079168A (en) 1967-08-16
SE322843B (member.php) 1970-04-20
USB381501I5 (member.php)
US3334281A (en) 1967-08-01

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Legal Events

Date Code Title Description
VJC Lapsed due to non-payment of the due maintenance fee for the patent or patent application
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: RCA