NL144082B - Gesleutelde aftastversterkerschakeling. - Google Patents

Gesleutelde aftastversterkerschakeling.

Info

Publication number
NL144082B
NL144082B NL63293527A NL293527A NL144082B NL 144082 B NL144082 B NL 144082B NL 63293527 A NL63293527 A NL 63293527A NL 293527 A NL293527 A NL 293527A NL 144082 B NL144082 B NL 144082B
Authority
NL
Netherlands
Prior art keywords
amplifier circuit
key
span amplifier
key span
circuit
Prior art date
Application number
NL63293527A
Other languages
English (en)
Dutch (nl)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL144082B publication Critical patent/NL144082B/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H03F3/12Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/58Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being tunnel diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Radar Systems Or Details Thereof (AREA)
NL63293527A 1962-06-04 1963-05-31 Gesleutelde aftastversterkerschakeling. NL144082B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US199786A US3254305A (en) 1962-06-04 1962-06-04 Sense amplifier including a negative resistance diode and control circuitry therefor

Publications (1)

Publication Number Publication Date
NL144082B true NL144082B (nl) 1974-11-15

Family

ID=22739008

Family Applications (2)

Application Number Title Priority Date Filing Date
NL293527D NL293527A (xx) 1962-06-04
NL63293527A NL144082B (nl) 1962-06-04 1963-05-31 Gesleutelde aftastversterkerschakeling.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL293527D NL293527A (xx) 1962-06-04

Country Status (5)

Country Link
US (1) US3254305A (xx)
BE (1) BE633060A (xx)
DE (1) DE1189131B (xx)
GB (1) GB1007958A (xx)
NL (2) NL144082B (xx)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3103597A (en) * 1963-09-10 Bistable diode switching circuits
US3105957A (en) * 1959-10-02 1963-10-01 Rca Corp Negative resistance diode memory
US3054002A (en) * 1960-10-21 1962-09-11 Bell Telephone Labor Inc Logic circuit
US3127526A (en) * 1961-08-15 1964-03-31 Ibm Feedback amplifier employing tunnel diode

Also Published As

Publication number Publication date
DE1189131B (de) 1965-03-18
BE633060A (xx)
GB1007958A (en) 1965-10-22
US3254305A (en) 1966-05-31
NL293527A (xx)

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