NL139417B - Transistor voorzien van een epitaxiale halfgeleiderlaag op een monokrisstallijne drager. - Google Patents

Transistor voorzien van een epitaxiale halfgeleiderlaag op een monokrisstallijne drager.

Info

Publication number
NL139417B
NL139417B NL676700241A NL6700241A NL139417B NL 139417 B NL139417 B NL 139417B NL 676700241 A NL676700241 A NL 676700241A NL 6700241 A NL6700241 A NL 6700241A NL 139417 B NL139417 B NL 139417B
Authority
NL
Netherlands
Prior art keywords
monokris
stalline
support
semiconductor layer
epitaxial semiconductor
Prior art date
Application number
NL676700241A
Other languages
English (en)
Dutch (nl)
Other versions
NL6700241A (en)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US26135A external-priority patent/US3130377A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of NL6700241A publication Critical patent/NL6700241A/xx
Publication of NL139417B publication Critical patent/NL139417B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
NL676700241A 1960-05-02 1967-01-06 Transistor voorzien van een epitaxiale halfgeleiderlaag op een monokrisstallijne drager. NL139417B (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US26135A US3130377A (en) 1960-05-02 1960-05-02 Semiconductor integrated circuit utilizing field-effect transistors
US8725861A 1961-02-06 1961-02-06
NL274363 1962-02-05
US377710A US3211972A (en) 1960-05-02 1964-06-24 Semiconductor networks

Publications (2)

Publication Number Publication Date
NL6700241A NL6700241A (en)) 1967-03-28
NL139417B true NL139417B (nl) 1973-07-16

Family

ID=27483670

Family Applications (1)

Application Number Title Priority Date Filing Date
NL676700241A NL139417B (nl) 1960-05-02 1967-01-06 Transistor voorzien van een epitaxiale halfgeleiderlaag op een monokrisstallijne drager.

Country Status (1)

Country Link
NL (1) NL139417B (en))

Also Published As

Publication number Publication date
NL6700241A (en)) 1967-03-28

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Legal Events

Date Code Title Description
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: TEXAS

V4 Discontinued because of reaching the maximum lifetime of a patent