NL139417B - Transistor voorzien van een epitaxiale halfgeleiderlaag op een monokrisstallijne drager. - Google Patents
Transistor voorzien van een epitaxiale halfgeleiderlaag op een monokrisstallijne drager.Info
- Publication number
- NL139417B NL139417B NL676700241A NL6700241A NL139417B NL 139417 B NL139417 B NL 139417B NL 676700241 A NL676700241 A NL 676700241A NL 6700241 A NL6700241 A NL 6700241A NL 139417 B NL139417 B NL 139417B
- Authority
- NL
- Netherlands
- Prior art keywords
- monokris
- stalline
- support
- semiconductor layer
- epitaxial semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26135A US3130377A (en) | 1960-05-02 | 1960-05-02 | Semiconductor integrated circuit utilizing field-effect transistors |
| US8725861A | 1961-02-06 | 1961-02-06 | |
| NL274363 | 1962-02-05 | ||
| US377710A US3211972A (en) | 1960-05-02 | 1964-06-24 | Semiconductor networks |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL6700241A NL6700241A (cg-RX-API-DMAC10.html) | 1967-03-28 |
| NL139417B true NL139417B (nl) | 1973-07-16 |
Family
ID=27483670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL676700241A NL139417B (nl) | 1960-05-02 | 1967-01-06 | Transistor voorzien van een epitaxiale halfgeleiderlaag op een monokrisstallijne drager. |
Country Status (1)
| Country | Link |
|---|---|
| NL (1) | NL139417B (cg-RX-API-DMAC10.html) |
-
1967
- 1967-01-06 NL NL676700241A patent/NL139417B/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL6700241A (cg-RX-API-DMAC10.html) | 1967-03-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NL80 | Information provided on patent owner name for an already discontinued patent |
Owner name: TEXAS |
|
| V4 | Discontinued because of reaching the maximum lifetime of a patent |