NL135875C - - Google Patents
Info
- Publication number
- NL135875C NL135875C NL135875DA NL135875C NL 135875 C NL135875 C NL 135875C NL 135875D A NL135875D A NL 135875DA NL 135875 C NL135875 C NL 135875C
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/92—Controlling diffusion profile by oxidation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US740958A US3066052A (en) | 1958-06-09 | 1958-06-09 | Vapor-solid diffusion of semiconductive material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL135875C true NL135875C (https=) | 1900-01-01 |
Family
ID=24978760
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL135875D NL135875C (https=) | 1958-06-09 | ||
| NL239076D NL239076A (https=) | 1958-06-09 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL239076D NL239076A (https=) | 1958-06-09 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3066052A (https=) |
| BE (1) | BE579297A (https=) |
| CH (1) | CH397376A (https=) |
| DE (1) | DE1148024B (https=) |
| ES (1) | ES249909A1 (https=) |
| FR (1) | FR1235367A (https=) |
| GB (1) | GB909869A (https=) |
| NL (2) | NL239076A (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3084079A (en) * | 1960-10-13 | 1963-04-02 | Pacific Semiconductors Inc | Manufacture of semiconductor devices |
| US3205102A (en) * | 1960-11-22 | 1965-09-07 | Hughes Aircraft Co | Method of diffusion |
| US3203840A (en) * | 1961-12-14 | 1965-08-31 | Texas Insutruments Inc | Diffusion method |
| DE1444521B2 (de) * | 1962-02-01 | 1971-02-25 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zur herstellung einer halbleiteranordnung |
| US3178798A (en) * | 1962-05-09 | 1965-04-20 | Ibm | Vapor deposition process wherein the vapor contains both donor and acceptor impurities |
| US3247032A (en) * | 1962-06-20 | 1966-04-19 | Continental Device Corp | Method for controlling diffusion of an active impurity material into a semiconductor body |
| US3255005A (en) * | 1962-06-29 | 1966-06-07 | Tung Sol Electric Inc | Masking process for semiconductor elements |
| DE1287410B (de) * | 1963-02-04 | 1969-01-16 | Hitachi Ltd | Verfahren zur Herstellung von Halbleiterelementen mit Oberflaechenschutzschicht aus Siliziumdioxyd |
| US3194701A (en) * | 1963-04-01 | 1965-07-13 | Robert P Lothrop | Method for forming p-n junctions on semiconductors |
| NL6407230A (https=) * | 1963-09-28 | 1965-03-29 | ||
| US3382114A (en) * | 1964-01-07 | 1968-05-07 | Philips Corp | Method of manufacturing semiconductor plate using molten zone on powder support |
| DE1289189B (de) * | 1964-07-03 | 1969-02-13 | Telefunken Patent | Verfahren zum Eindiffundieren von Stoerstellen in einen Halbleiterkoerper |
| US3343518A (en) * | 1964-09-30 | 1967-09-26 | Hayes Inc C I | High temperature furnace |
| US3477887A (en) * | 1966-07-01 | 1969-11-11 | Motorola Inc | Gaseous diffusion method |
| US3542609A (en) * | 1967-11-22 | 1970-11-24 | Itt | Double depositions of bbr3 in silicon |
| US3880682A (en) * | 1970-02-16 | 1975-04-29 | Siemens Ag | Method of simultaneous double diffusion |
| DE2453134C3 (de) * | 1974-11-08 | 1983-02-10 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planardiffusionsverfahren |
| DE2838928A1 (de) * | 1978-09-07 | 1980-03-20 | Ibm Deutschland | Verfahren zum dotieren von siliciumkoerpern mit bor |
| DE3150420A1 (de) * | 1981-12-19 | 1983-06-30 | Solarex Corp., 14001 Rockville, Md. | Verfahren zur bildung einer duennen phosphorschicht auf siliziumsubstraten durch aufdampfen von h 3 po 4 |
| NL8105920A (nl) * | 1981-12-31 | 1983-07-18 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
| US4676847A (en) * | 1985-01-25 | 1987-06-30 | American Telephone And Telegraph Company At&T Bell Laboratories | Controlled boron doping of silicon |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE530566A (https=) * | 1953-07-22 | |||
| AT193945B (de) * | 1955-06-28 | 1957-12-10 | Western Electric Co | Verfahren zur Änderung der spezifischen Leitfähigkeit eines Halbleitermaterials |
| NL210216A (https=) * | 1955-12-02 |
-
0
- GB GB909869D patent/GB909869A/en not_active Expired
- NL NL135875D patent/NL135875C/xx active
- NL NL239076D patent/NL239076A/xx unknown
-
1958
- 1958-06-09 US US740958A patent/US3066052A/en not_active Expired - Lifetime
-
1959
- 1959-05-15 FR FR794838A patent/FR1235367A/fr not_active Expired
- 1959-05-20 ES ES0249909A patent/ES249909A1/es not_active Expired
- 1959-05-21 DE DEW25659A patent/DE1148024B/de active Pending
- 1959-06-03 BE BE579297A patent/BE579297A/fr unknown
- 1959-06-09 CH CH7420859A patent/CH397376A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3066052A (en) | 1962-11-27 |
| FR1235367A (fr) | 1960-07-08 |
| CH397376A (de) | 1965-08-15 |
| GB909869A (https=) | 1900-01-01 |
| BE579297A (fr) | 1959-10-01 |
| ES249909A1 (es) | 1960-05-16 |
| NL239076A (https=) | 1900-01-01 |
| DE1148024B (de) | 1963-05-02 |