NL131984C - - Google Patents

Info

Publication number
NL131984C
NL131984C NL131984DA NL131984C NL 131984 C NL131984 C NL 131984C NL 131984D A NL131984D A NL 131984DA NL 131984 C NL131984 C NL 131984C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of NL131984C publication Critical patent/NL131984C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H01C7/047—Vanadium oxides or oxidic compounds, e.g. VOx
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G31/00—Compounds of vanadium
    • C01G31/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
NL131984D 1964-06-02 NL131984C (xx)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3151164 1964-06-02
JP3785664 1964-07-01
JP4696264 1964-08-14

Publications (1)

Publication Number Publication Date
NL131984C true NL131984C (xx) 1900-01-01

Family

ID=27287348

Family Applications (2)

Application Number Title Priority Date Filing Date
NL131984D NL131984C (xx) 1964-06-02
NL6506886A NL6506886A (xx) 1964-06-02 1965-05-31

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL6506886A NL6506886A (xx) 1964-06-02 1965-05-31

Country Status (4)

Country Link
US (1) US3378350A (xx)
DE (1) DE1592455B2 (xx)
GB (1) GB1095805A (xx)
NL (2) NL6506886A (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3650680A (en) * 1964-04-07 1972-03-21 Teeg Research Inc Processes for obtaining vanadium suboxides
GB1173690A (en) * 1966-11-18 1969-12-10 Hayakawa Denki Kogyo Kabushiki Method for Growing Single Crystals.
US3642432A (en) * 1969-11-21 1972-02-15 Teeg Research Inc Processes for obtaining vanadium suboxides
US3650702A (en) * 1970-04-15 1972-03-21 Gen Motors Corp Crystal growth of tetragonal germanium dioxide from a flux
CN100421844C (zh) * 2006-12-11 2008-10-01 武汉大学 一种二氧化钒粉末的制备方法
CN111855026A (zh) * 2019-04-30 2020-10-30 中国科学技术大学 测温仪标定装置及使用该装置对测温仪标定的方法
CN111850684A (zh) * 2019-04-30 2020-10-30 中国科学技术大学 二氧化钒基单晶体的制备方法及二氧化钒基单晶体
CN111854998A (zh) * 2019-04-30 2020-10-30 中国科学技术大学 温度传感器
CN111863526A (zh) * 2019-04-30 2020-10-30 中国科学技术大学 温控开关

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA529224A (en) * 1956-08-14 John C. R. Kelly, Jr. Production of vanadium trioxide for the manufacture of ductile vanadium
US2180353A (en) * 1933-01-06 1939-11-21 Nat Aniline & Chem Co Inc Vanadium oxide catalyst
US2482311A (en) * 1939-07-01 1949-09-20 Christiania Spigerverk Process for the treatment of vanadium-bearing ores
US3002320A (en) * 1951-11-16 1961-10-03 Bell Telephone Labor Inc Preparation of silicon material
US2665970A (en) * 1952-12-26 1954-01-12 Ca Nat Research Council Precipitation of vanadium oxides
US3244488A (en) * 1963-06-06 1966-04-05 Perkin Elmer Corp Plural directional growing of crystals

Also Published As

Publication number Publication date
GB1095805A (en) 1967-12-20
DE1592455A1 (de) 1970-03-12
US3378350A (en) 1968-04-16
NL6506886A (xx) 1965-12-03
DE1592455B2 (de) 1971-01-21

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