NL113632C - - Google Patents
Info
- Publication number
- NL113632C NL113632C NL113632DA NL113632C NL 113632 C NL113632 C NL 113632C NL 113632D A NL113632D A NL 113632DA NL 113632 C NL113632 C NL 113632C
- Authority
- NL
- Netherlands
Links
Classifications
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- H01L29/36—
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
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- H01L29/00—
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- H01L29/73—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1959T0016518 DE1171992C2 (de) | 1959-04-08 | 1959-04-08 | Transistor mit Dotierung der Basiszone |
Publications (1)
Publication Number | Publication Date |
---|---|
NL113632C true NL113632C (fr) |
Family
ID=7548280
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL113632D NL113632C (fr) | 1959-04-08 | ||
NL249699D NL249699A (fr) | 1959-04-08 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL249699D NL249699A (fr) | 1959-04-08 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3317359A (fr) |
DE (1) | DE1171992C2 (fr) |
GB (1) | GB952985A (fr) |
NL (2) | NL249699A (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3442722A (en) * | 1964-12-16 | 1969-05-06 | Siemens Ag | Method of making a pnpn thyristor |
US4066484A (en) * | 1974-10-24 | 1978-01-03 | General Electric Company | Method of manufacture of a gold diffused thyristor |
DE2625856C3 (de) * | 1976-06-09 | 1980-04-17 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterbauelement |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2811653A (en) * | 1953-05-22 | 1957-10-29 | Rca Corp | Semiconductor devices |
DE1051893B (de) * | 1953-12-12 | 1959-03-05 | Bergische Stahlindustrie | Selbsttaetige Starrkupplung |
US2860218A (en) * | 1954-02-04 | 1958-11-11 | Gen Electric | Germanium current controlling devices |
US2813233A (en) * | 1954-07-01 | 1957-11-12 | Bell Telephone Labor Inc | Semiconductive device |
DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
BE556951A (fr) * | 1954-10-18 | |||
US3022568A (en) * | 1957-03-27 | 1962-02-27 | Rca Corp | Semiconductor devices |
NL240883A (fr) * | 1958-07-17 | |||
US3104991A (en) * | 1958-09-23 | 1963-09-24 | Raytheon Co | Method of preparing semiconductor material |
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0
- NL NL113632D patent/NL113632C/xx active
- NL NL249699D patent/NL249699A/xx unknown
-
1959
- 1959-04-08 DE DE1959T0016518 patent/DE1171992C2/de not_active Expired
-
1960
- 1960-04-08 GB GB12491/60A patent/GB952985A/en not_active Expired
-
1965
- 1965-05-05 US US458810A patent/US3317359A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1171992B (de) | 1964-06-11 |
US3317359A (en) | 1967-05-02 |
DE1171992C2 (de) | 1973-01-18 |
GB952985A (en) | 1964-03-18 |
NL249699A (fr) |