NL113570C - - Google Patents

Info

Publication number
NL113570C
NL113570C NL113570DA NL113570C NL 113570 C NL113570 C NL 113570C NL 113570D A NL113570D A NL 113570DA NL 113570 C NL113570 C NL 113570C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL113570C publication Critical patent/NL113570C/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C7/00—Modulating electromagnetic waves
    • H03C7/02—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
    • H03C7/025—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas using semiconductor devices
    • H03C7/027—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas using semiconductor devices using diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02—Varying the frequency of the oscillations by electronic means
    • H03B2201/0225—Varying the frequency of the oscillations by electronic means the means being associated with an element comprising distributed inductances and capacitances
    • H03B2201/0241—Varying the frequency of the oscillations by electronic means the means being associated with an element comprising distributed inductances and capacitances the element being a magnetically variable element, e.g. an Yttrium Iron Garnet

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Measuring Fluid Pressure (AREA)
NL113570D 1959-11-25 NL113570C (OSRAM)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US855426A US3063023A (en) 1959-11-25 1959-11-25 Modulated oscillator and low impedance diode construction therefor
US42894A US3145454A (en) 1959-11-25 1960-07-14 Fabrication of low impedance diode structures

Publications (1)

Publication Number Publication Date
NL113570C true NL113570C (OSRAM)

Family

ID=26719746

Family Applications (2)

Application Number Title Priority Date Filing Date
NL113570D NL113570C (OSRAM) 1959-11-25
NL257516D NL257516A (OSRAM) 1959-11-25

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL257516D NL257516A (OSRAM) 1959-11-25

Country Status (6)

Country Link
US (2) US3063023A (OSRAM)
CH (1) CH387177A (OSRAM)
DE (1) DE1439911A1 (OSRAM)
FR (1) FR1274197A (OSRAM)
GB (1) GB974493A (OSRAM)
NL (2) NL257516A (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL277811A (OSRAM) * 1961-04-27 1900-01-01
US3247718A (en) * 1963-02-01 1966-04-26 Pratt & Whitney Inc Digital output pressure transducer
DE1290260B (de) * 1963-09-30 1969-03-06 Siemens Ag Anordnung zur Verminderung der Eigeninduktivitaet und Zuleitungsinduktivitaet von Tunneldioden
US3343107A (en) * 1963-12-03 1967-09-19 Bell Telephone Labor Inc Semiconductor package
NL134170C (OSRAM) * 1963-12-17 1900-01-01
US3304469A (en) * 1964-03-03 1967-02-14 Rca Corp Field effect solid state device having a partially insulated electrode
US3274459A (en) * 1964-05-07 1966-09-20 Sterzer Fred Low impedance coupled transmission line and solid state tunnel diode structure
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device
US3435377A (en) * 1966-03-04 1969-03-25 Gen Dynamics Corp Force-to-frequency transducer
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor
DE1926989A1 (de) * 1969-05-27 1970-12-03 Beneking Prof Dr Rer Nat Heinz Hochfrequenzleitung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
US2713132A (en) * 1952-10-14 1955-07-12 Int Standard Electric Corp Electric rectifying devices employing semiconductors
US2734154A (en) * 1953-07-27 1956-02-07 Semiconductor devices
US2879480A (en) * 1954-11-04 1959-03-24 Western Electric Co Frequency modulating transistor circuits
NL251064A (OSRAM) * 1955-11-04
US2852746A (en) * 1956-02-02 1958-09-16 Paul F Scheele Voltage-controlled transistor oscillator
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure

Also Published As

Publication number Publication date
NL257516A (OSRAM)
FR1274197A (fr) 1961-10-20
DE1439911A1 (de) 1968-12-19
US3145454A (en) 1964-08-25
CH387177A (fr) 1965-01-31
GB974493A (en) 1964-11-04
US3063023A (en) 1962-11-06

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