NL113266C - - Google Patents

Info

Publication number
NL113266C
NL113266C NL113266DA NL113266C NL 113266 C NL113266 C NL 113266C NL 113266D A NL113266D A NL 113266DA NL 113266 C NL113266 C NL 113266C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL113266C publication Critical patent/NL113266C/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
NL113266D 1957-01-18 NL113266C (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR729817 1957-01-18

Publications (1)

Publication Number Publication Date
NL113266C true NL113266C (en:Method)

Family

ID=8704072

Family Applications (2)

Application Number Title Priority Date Filing Date
NL113266D NL113266C (en:Method) 1957-01-18
NL224173D NL224173A (en:Method) 1957-01-18

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL224173D NL224173A (en:Method) 1957-01-18

Country Status (5)

Country Link
US (1) US2962605A (en:Method)
DE (1) DE1067129B (en:Method)
FR (1) FR1164844A (en:Method)
GB (1) GB883906A (en:Method)
NL (2) NL224173A (en:Method)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL155412C (en:Method) * 1959-04-15
US3140438A (en) * 1959-05-08 1964-07-07 Clevite Corp Voltage regulating semiconductor device
US3263085A (en) * 1960-02-01 1966-07-26 Rca Corp Radiation powered semiconductor devices
US3219837A (en) * 1960-02-29 1965-11-23 Sanyo Electric Co Negative resistance transistors
US3157540A (en) * 1960-05-31 1964-11-17 Engelhard Ind Inc High pressure process for improving the mechanical properties of metals
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3040188A (en) * 1960-10-28 1962-06-19 Wolfgang W Gaertner Three zone negative resistance junction diode having a short circuit across one of the junctions
US3254278A (en) * 1960-11-14 1966-05-31 Hoffman Electronics Corp Tunnel diode device
US3134905A (en) * 1961-02-03 1964-05-26 Bell Telephone Labor Inc Photosensitive semiconductor junction device
US3260900A (en) * 1961-04-27 1966-07-12 Merck & Co Inc Temperature compensating barrier layer semiconductor
NL280641A (en:Method) * 1961-07-07
NL280849A (en:Method) * 1961-07-12 1900-01-01
BE628619A (en:Method) * 1962-02-20
NL280435A (en:Method) * 1962-07-02
US3265899A (en) * 1962-07-25 1966-08-09 Gen Motors Corp Semiconductor amplifying radiation detector
GB1052661A (en:Method) * 1963-01-30 1900-01-01
US3304470A (en) * 1963-03-14 1967-02-14 Nippon Electric Co Negative resistance semiconductor device utilizing tunnel effect
US3327136A (en) * 1964-03-30 1967-06-20 Abraham George Variable gain tunneling
US3284681A (en) * 1964-07-01 1966-11-08 Gen Electric Pnpn semiconductor switching devices with stabilized firing characteristics
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
US3268782A (en) * 1965-02-02 1966-08-23 Int Rectifier Corp High rate of rise of current-fourlayer device
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics
US8408792B2 (en) 2007-03-30 2013-04-02 Kraft Foods Global Brands Llc Package integrity indicating closure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048359B (en:Method) * 1952-07-22
US2709780A (en) * 1952-10-11 1955-05-31 Bell Telephone Labor Inc Constant voltage semiconductor devices
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
US2795742A (en) * 1952-12-12 1957-06-11 Bell Telephone Labor Inc Semiconductive translating devices utilizing selected natural grain boundaries
US2779877A (en) * 1955-06-17 1957-01-29 Sprague Electric Co Multiple junction transistor unit

Also Published As

Publication number Publication date
GB883906A (en) 1961-12-06
DE1067129B (en:Method)
FR1164844A (fr) 1958-10-14
US2962605A (en) 1960-11-29
NL224173A (en:Method)

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