NL112832C - - Google Patents

Info

Publication number: NL112832C
Authority: NL; Netherlands

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1959-05-08

Publication of NL112832C publication Critical patent/NL112832C/xx

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Silicon Compounds (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

NL112832D 1959-05-08 NL112832C (enrdf_load_html_response)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DES62919A DE1094711B (de)	1959-05-08	1959-05-08	Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstaeben, insbesondere aus Silizium

Publications (1)

Publication Number	Publication Date
NL112832C true NL112832C (enrdf_load_html_response)

Family

ID=25995673

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
NL112832D NL112832C (enrdf_load_html_response)	1959-05-08
NL251304D NL251304A (enrdf_load_html_response)	1959-05-08

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
NL251304D NL251304A (enrdf_load_html_response)	1959-05-08

Country Status (6)

Country	Link
US (1)	US3113841A (enrdf_load_html_response)
CH (1)	CH386116A (enrdf_load_html_response)
DE (1)	DE1094711B (enrdf_load_html_response)
FR (1)	FR1261240A (enrdf_load_html_response)
GB (1)	GB907764A (enrdf_load_html_response)
NL (2)	NL251304A (enrdf_load_html_response)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL133150C (enrdf_load_html_response) *	1959-12-23
DE1165882B (de) *	1960-02-05	1964-03-19	Philips Patentverwaltung	Vorrichtung zur Ausfuehrung von Drehbewegungen an stabfoermigen Koerpern, insbesondere an Halbleiterkoerpern
DE1209550B (de) *	1961-03-20	1966-01-27	Licentia Gmbh	Halterung fuer zonenzuschmelzende Staebe
DE1444530B2 (de) *	1962-12-12	1970-10-01	Siemens AG, 1000 Berlin u. 8000 München	Verfahren und Vorrichtung zum Herstellen von stabförmigem, einkristallinen Halbleitermaterial
US3251658A (en) *	1963-02-26	1966-05-17	Monsanto Co	Zone refining start-up
US3275417A (en) *	1963-10-15	1966-09-27	Texas Instruments Inc	Production of dislocation-free silicon single crystals
DE1224273B (de) *	1964-06-23	1966-09-08	Siemens Ag	Vorrichtung zum tiegelfreien Zonenschmelzen
DE1265708B (de) *	1965-11-30	1968-04-11	Siemens Ag	Vorrichtung zum tiegelfreien Zonenschmelzen
DE2322969C3 (de) *	1973-05-07	1980-10-16	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Vorrichtung zum Haltern der Stabenden beim tiegelfreien Zonenschmelzen
WO2025093146A1 (en)	2023-10-31	2025-05-08	University Of Latvia	A technique for replenishing molten, levitating material by growing monocrystalline, polycrystalline, or other solid-state structures under electromagnetic levitation conditions

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2972525A (en) *	1953-02-26	1961-02-21	Siemens Ag	Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2792317A (en) *	1954-01-28	1957-05-14	Westinghouse Electric Corp	Method of producing multiple p-n junctions
FR1119039A (fr) *	1954-03-09	1956-06-14	Siemens Ag	Procédé pour la préparation d'un corps cristallin, en particulier d'un corps semiconducteur
AT207857B (de) *	1955-01-14		Degussa	Verfahren zur Herstellung von Blausäure durch Umsetzung von Kohlenwasserstoffen mit Ammoniak im Katalysatorbett
BE548227A (enrdf_load_html_response) *	1955-07-22
US3011877A (en) *	1956-06-25	1961-12-05	Siemens Ag	Production of high-purity semiconductor materials for electrical purposes
US2990261A (en) *	1958-12-11	1961-06-27	Bell Telephone Labor Inc	Processing of boron compact

0
- NL NL112832D patent/NL112832C/xx active
- NL NL251304D patent/NL251304A/xx unknown
1959
- 1959-05-08 DE DES62919A patent/DE1094711B/de active Pending
1960
- 1960-03-21 FR FR821989A patent/FR1261240A/fr not_active Expired
- 1960-04-20 US US23490A patent/US3113841A/en not_active Expired - Lifetime
- 1960-04-20 CH CH440960A patent/CH386116A/de unknown
- 1960-05-06 GB GB16205/60A patent/GB907764A/en not_active Expired

Also Published As

Publication number	Publication date
FR1261240A (fr)	1961-05-19
DE1094711B (de)	1960-12-15
CH386116A (de)	1964-12-31
GB907764A (en)	1962-10-10
NL251304A (enrdf_load_html_response)
US3113841A (en)	1963-12-10

Publication	Publication Date	Title
JPS374620B1 (enrdf_load_html_response)	1962-06-15
LU37984A1 (enrdf_load_html_response)	1960-01-30
JPS3820072B1 (enrdf_load_html_response)	1963-09-30
BE593762A (enrdf_load_html_response)
NL258961A (enrdf_load_html_response)
NL112832C (enrdf_load_html_response)
NL258290A (enrdf_load_html_response)
NL258061A (enrdf_load_html_response)
NL257107A (enrdf_load_html_response)
NL256826A (enrdf_load_html_response)
NL255116A (enrdf_load_html_response)	1964-03-25
NL254526A (enrdf_load_html_response)
NL246466A (enrdf_load_html_response)	1961-05-15
NL244609A (enrdf_load_html_response)
NL243029A (enrdf_load_html_response)
NL123968C (enrdf_load_html_response)
BE577586A (enrdf_load_html_response)	1959-04-30
NL121750C (enrdf_load_html_response)
NL121505C (enrdf_load_html_response)
LU39515A1 (enrdf_load_html_response)	1961-02-09
LU37260A1 (enrdf_load_html_response)
BE586328A (enrdf_load_html_response)
BE586320A (enrdf_load_html_response)
BE586294A (enrdf_load_html_response)
BE586259A (enrdf_load_html_response)