NL111773C - - Google Patents
Info
- Publication number
- NL111773C NL111773C NL111773DA NL111773C NL 111773 C NL111773 C NL 111773C NL 111773D A NL111773D A NL 111773DA NL 111773 C NL111773 C NL 111773C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL230316 | 1958-08-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL111773C true NL111773C (ru) |
Family
ID=19751303
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL111773D NL111773C (ru) | 1958-08-07 | ||
NL230316D NL230316A (ru) | 1958-08-07 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL230316D NL230316A (ru) | 1958-08-07 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3074826A (ru) |
CH (1) | CH376186A (ru) |
DE (1) | DE1105524B (ru) |
FR (1) | FR1232095A (ru) |
GB (1) | GB917773A (ru) |
NL (2) | NL230316A (ru) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL121713C (ru) * | 1960-01-30 | |||
US3220895A (en) * | 1961-08-25 | 1965-11-30 | Raytheon Co | Fabrication of barrier material devices |
US3211594A (en) * | 1961-12-19 | 1965-10-12 | Hughes Aircraft Co | Semiconductor device manufacture |
BE627004A (ru) * | 1962-01-12 | |||
US3258371A (en) * | 1962-02-01 | 1966-06-28 | Semiconductor Res Found | Silicon semiconductor device for high frequency, and method of its manufacture |
US3307088A (en) * | 1962-03-13 | 1967-02-28 | Fujikawa Kyoichi | Silver-lead alloy contacts containing dopants for semiconductors |
US3257589A (en) * | 1962-05-22 | 1966-06-21 | Texas Instruments Inc | Transistors and the fabrication thereof |
US3268375A (en) * | 1962-05-22 | 1966-08-23 | Gordon J Ratcliff | Alloy-diffusion process for fabricating germanium transistors |
BE636316A (ru) * | 1962-08-23 | 1900-01-01 | ||
GB1050478A (ru) * | 1962-10-08 | |||
US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
US3235419A (en) * | 1963-01-15 | 1966-02-15 | Philips Corp | Method of manufacturing semiconductor devices |
US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
US3513041A (en) * | 1967-06-19 | 1970-05-19 | Motorola Inc | Fabrication of a germanium diffused base power transistor |
US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2793145A (en) * | 1952-06-13 | 1957-05-21 | Sylvania Electric Prod | Method of forming a junction transistor |
US2836522A (en) * | 1952-11-15 | 1958-05-27 | Rca Corp | Junction type semiconductor device and method of its manufacture |
BE531626A (ru) * | 1953-09-04 | |||
US2907969A (en) * | 1954-02-19 | 1959-10-06 | Westinghouse Electric Corp | Photoelectric device |
NL200888A (ru) * | 1954-10-29 | |||
GB807995A (en) * | 1955-09-02 | 1959-01-28 | Gen Electric Co Ltd | Improvements in or relating to the production of semiconductor bodies |
-
0
- NL NL111773D patent/NL111773C/xx active
- NL NL230316D patent/NL230316A/xx unknown
-
1959
- 1959-07-03 US US824868A patent/US3074826A/en not_active Expired - Lifetime
- 1959-08-04 GB GB26566/59A patent/GB917773A/en not_active Expired
- 1959-08-04 CH CH7656159A patent/CH376186A/de unknown
- 1959-08-04 DE DEN17048A patent/DE1105524B/de active Pending
- 1959-08-06 FR FR802194A patent/FR1232095A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1105524B (de) | 1961-04-27 |
US3074826A (en) | 1963-01-22 |
FR1232095A (fr) | 1960-10-05 |
NL230316A (ru) | |
GB917773A (en) | 1963-02-06 |
CH376186A (de) | 1964-03-31 |