NL111773C - - Google Patents

Info

Publication number: NL111773C
Authority: NL; Netherlands

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1958-08-07

Publication of NL111773C publication Critical patent/NL111773C/xx

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Ceramic Engineering (AREA)
Electrodes Of Semiconductors (AREA)

NL111773D 1958-08-07 NL111773C (is)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
NL230316		1958-08-07

Publications (1)

Publication Number	Publication Date
NL111773C true NL111773C (is)

Family

ID=19751303

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
NL230316D NL230316A (is)	1958-08-07
NL111773D NL111773C (is)	1958-08-07

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
NL230316D NL230316A (is)	1958-08-07

Country Status (6)

Country	Link
US (1)	US3074826A (is)
CH (1)	CH376186A (is)
DE (1)	DE1105524B (is)
FR (1)	FR1232095A (is)
GB (1)	GB917773A (is)
NL (2)	NL111773C (is)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL247918A (is) *	1960-01-30
US3220895A (en) *	1961-08-25	1965-11-30	Raytheon Co	Fabrication of barrier material devices
US3211594A (en) *	1961-12-19	1965-10-12	Hughes Aircraft Co	Semiconductor device manufacture
BE627004A (is) *	1962-01-12
US3258371A (en) *	1962-02-01	1966-06-28	Semiconductor Res Found	Silicon semiconductor device for high frequency, and method of its manufacture
US3307088A (en) *	1962-03-13	1967-02-28	Fujikawa Kyoichi	Silver-lead alloy contacts containing dopants for semiconductors
US3257589A (en) *	1962-05-22	1966-06-21	Texas Instruments Inc	Transistors and the fabrication thereof
US3268375A (en) *	1962-05-22	1966-08-23	Gordon J Ratcliff	Alloy-diffusion process for fabricating germanium transistors
NL297002A (is) *	1962-08-23	1900-01-01
NL297821A (is) *	1962-10-08
US3249831A (en) *	1963-01-04	1966-05-03	Westinghouse Electric Corp	Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3235419A (en) *	1963-01-15	1966-02-15	Philips Corp	Method of manufacturing semiconductor devices
US3275910A (en) *	1963-01-18	1966-09-27	Motorola Inc	Planar transistor with a relative higher-resistivity base region
US3513041A (en) *	1967-06-19	1970-05-19	Motorola Inc	Fabrication of a germanium diffused base power transistor
US3538401A (en) *	1968-04-11	1970-11-03	Westinghouse Electric Corp	Drift field thyristor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2793145A (en) *	1952-06-13	1957-05-21	Sylvania Electric Prod	Method of forming a junction transistor
US2836522A (en) *	1952-11-15	1958-05-27	Rca Corp	Junction type semiconductor device and method of its manufacture
BE531626A (is) *	1953-09-04
US2907969A (en) *	1954-02-19	1959-10-06	Westinghouse Electric Corp	Photoelectric device
BE542380A (is) *	1954-10-29
GB807995A (en) *	1955-09-02	1959-01-28	Gen Electric Co Ltd	Improvements in or relating to the production of semiconductor bodies

0
- NL NL230316D patent/NL230316A/xx unknown
- NL NL111773D patent/NL111773C/xx active
1959
- 1959-07-03 US US824868A patent/US3074826A/en not_active Expired - Lifetime
- 1959-08-04 DE DEN17048A patent/DE1105524B/de active Pending
- 1959-08-04 CH CH7656159A patent/CH376186A/de unknown
- 1959-08-04 GB GB26566/59A patent/GB917773A/en not_active Expired
- 1959-08-06 FR FR802194A patent/FR1232095A/fr not_active Expired

Also Published As

Publication number	Publication date
US3074826A (en)	1963-01-22
DE1105524B (de)	1961-04-27
FR1232095A (fr)	1960-10-05
CH376186A (de)	1964-03-31
GB917773A (en)	1963-02-06
NL230316A (is)

Publication	Publication Date	Title
AT214638B (is)	1961-04-25
AT217439B (is)	1961-10-10
AT215747B (is)	1961-06-26
AT213446B (is)	1961-02-27
AT216227B (is)	1961-07-10
AT215751B (is)	1961-06-26
AT213908B (is)	1961-03-10
AT213313B (is)	1961-02-10
AT217982B (is)	1961-11-10
AT213557B (is)	1961-02-27
AT219868B (is)	1962-02-26
AT213337B (is)	1961-02-10
AT216749B (is)	1961-08-10
AT213670B (is)	1961-02-27
AT219815B (is)	1962-02-26
AT213472B (is)	1961-02-27
AT213631B (is)	1961-02-27
FR1193913A (is)	1959-11-05
DE1238338C2 (is)	1967-10-19
AT214270B (is)	1961-03-27
AT214348B (is)	1961-03-27
AT216831B (is)	1961-08-25
AT216803B (is)	1961-08-25
AT215738B (is)	1961-06-26
AT216771B (is)	1961-08-25