NL108185C - - Google Patents
Info
- Publication number
- NL108185C NL108185C NL108185DA NL108185C NL 108185 C NL108185 C NL 108185C NL 108185D A NL108185D A NL 108185DA NL 108185 C NL108185 C NL 108185C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL230892 | 1958-08-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL108185C true NL108185C (pt) |
Family
ID=19751322
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL230892D NL230892A (pt) | 1958-08-27 | ||
NL108185D NL108185C (pt) | 1958-08-27 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL230892D NL230892A (pt) | 1958-08-27 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3047439A (pt) |
CH (1) | CH372760A (pt) |
DE (1) | DE1105067B (pt) |
FR (1) | FR1233420A (pt) |
GB (1) | GB915182A (pt) |
NL (2) | NL108185C (pt) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL268735A (pt) * | 1961-08-29 | |||
DE1204501B (de) * | 1961-08-29 | 1965-11-04 | Philips Nv | Verfahren zum Verbinden von Graphit-gegenstaenden miteinander oder mit Gegenstaenden aus anderen Werkstoffen durch Loeten |
NL276911A (pt) * | 1962-04-06 | |||
US3254280A (en) * | 1963-05-29 | 1966-05-31 | Westinghouse Electric Corp | Silicon carbide unipolar transistor |
DE1268278B (de) * | 1964-07-25 | 1968-05-16 | Ibm Deutschland | Ohmscher Kontakt an Halbleiterbauelementen aus Siliciumcarbid |
US3409467A (en) * | 1966-03-11 | 1968-11-05 | Nat Res Corp | Silicon carbide device |
US3517281A (en) * | 1967-01-25 | 1970-06-23 | Tyco Laboratories Inc | Light emitting silicon carbide semiconductor junction devices |
US3492719A (en) * | 1967-03-10 | 1970-02-03 | Westinghouse Electric Corp | Evaporated metal contacts for the fabrication of silicon carbide devices |
US3539883A (en) * | 1967-03-15 | 1970-11-10 | Ion Physics Corp | Antireflection coatings for semiconductor devices |
US3600645A (en) * | 1969-06-11 | 1971-08-17 | Westinghouse Electric Corp | Silicon carbide semiconductor device |
US3713901A (en) * | 1970-04-20 | 1973-01-30 | Trw Inc | Oxidation resistant refractory alloys |
US4166279A (en) * | 1977-12-30 | 1979-08-28 | International Business Machines Corporation | Electromigration resistance in gold thin film conductors |
US4795790A (en) * | 1986-12-02 | 1989-01-03 | General Electric Company | Thermoplastic polyetherimide ester polymers exhibiting improved flexibility |
US5200805A (en) * | 1987-12-28 | 1993-04-06 | Hughes Aircraft Company | Silicon carbide:metal carbide alloy semiconductor and method of making the same |
US5270252A (en) * | 1988-10-25 | 1993-12-14 | United States Of America As Represented By The Secretary Of The Navy | Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide |
US5514604A (en) * | 1993-12-08 | 1996-05-07 | General Electric Company | Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making |
US5929523A (en) * | 1996-03-07 | 1999-07-27 | 3C Semiconductor Corporation | Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC |
US6388272B1 (en) | 1996-03-07 | 2002-05-14 | Caldus Semiconductor, Inc. | W/WC/TAC ohmic and rectifying contacts on SiC |
US6573128B1 (en) | 2000-11-28 | 2003-06-03 | Cree, Inc. | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same |
US7026650B2 (en) * | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
US9515135B2 (en) * | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
WO2005119793A2 (en) * | 2004-05-28 | 2005-12-15 | Caracal, Inc. | Silicon carbide schottky diodes and fabrication method |
US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL87348C (pt) * | 1954-03-19 | 1900-01-01 | ||
US2831786A (en) * | 1954-06-28 | 1958-04-22 | p type | |
NL224458A (pt) * | 1956-05-15 | |||
DE1073110B (de) * | 1957-08-16 | 1960-01-14 | General Electric Company, Schenectady, N Y (V St A) | Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern |
US2937323A (en) * | 1958-05-29 | 1960-05-17 | Westinghouse Electric Corp | Fused junctions in silicon carbide |
-
0
- NL NL230892D patent/NL230892A/xx unknown
- NL NL108185D patent/NL108185C/xx active
-
1959
- 1959-07-31 US US830842A patent/US3047439A/en not_active Expired - Lifetime
- 1959-08-22 DE DEN17123A patent/DE1105067B/de active Pending
- 1959-08-24 GB GB28840/59A patent/GB915182A/en not_active Expired
- 1959-08-24 CH CH7733159A patent/CH372760A/de unknown
- 1959-08-25 FR FR803446A patent/FR1233420A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3047439A (en) | 1962-07-31 |
DE1105067B (de) | 1961-04-20 |
FR1233420A (fr) | 1960-10-12 |
GB915182A (en) | 1963-01-09 |
NL230892A (pt) | |
CH372760A (de) | 1963-10-31 |