NL230892A - - Google Patents

Info

Publication number
NL230892A
NL230892A NL230892DA NL230892A NL 230892 A NL230892 A NL 230892A NL 230892D A NL230892D A NL 230892DA NL 230892 A NL230892 A NL 230892A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL230892A publication Critical patent/NL230892A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
NL230892D 1958-08-27 NL230892A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL230892 1958-08-27

Publications (1)

Publication Number Publication Date
NL230892A true NL230892A (xx)

Family

ID=19751322

Family Applications (2)

Application Number Title Priority Date Filing Date
NL230892D NL230892A (xx) 1958-08-27
NL108185D NL108185C (xx) 1958-08-27

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL108185D NL108185C (xx) 1958-08-27

Country Status (6)

Country Link
US (1) US3047439A (xx)
CH (1) CH372760A (xx)
DE (1) DE1105067B (xx)
FR (1) FR1233420A (xx)
GB (1) GB915182A (xx)
NL (2) NL108185C (xx)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1204501B (de) * 1961-08-29 1965-11-04 Philips Nv Verfahren zum Verbinden von Graphit-gegenstaenden miteinander oder mit Gegenstaenden aus anderen Werkstoffen durch Loeten
NL268735A (xx) * 1961-08-29
NL276911A (xx) * 1962-04-06
US3254280A (en) * 1963-05-29 1966-05-31 Westinghouse Electric Corp Silicon carbide unipolar transistor
DE1268278B (de) * 1964-07-25 1968-05-16 Ibm Deutschland Ohmscher Kontakt an Halbleiterbauelementen aus Siliciumcarbid
US3409467A (en) * 1966-03-11 1968-11-05 Nat Res Corp Silicon carbide device
US3517281A (en) * 1967-01-25 1970-06-23 Tyco Laboratories Inc Light emitting silicon carbide semiconductor junction devices
US3492719A (en) * 1967-03-10 1970-02-03 Westinghouse Electric Corp Evaporated metal contacts for the fabrication of silicon carbide devices
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
US3600645A (en) * 1969-06-11 1971-08-17 Westinghouse Electric Corp Silicon carbide semiconductor device
US3713901A (en) * 1970-04-20 1973-01-30 Trw Inc Oxidation resistant refractory alloys
US4166279A (en) * 1977-12-30 1979-08-28 International Business Machines Corporation Electromigration resistance in gold thin film conductors
US4795790A (en) * 1986-12-02 1989-01-03 General Electric Company Thermoplastic polyetherimide ester polymers exhibiting improved flexibility
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
US5514604A (en) * 1993-12-08 1996-05-07 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
US5929523A (en) * 1996-03-07 1999-07-27 3C Semiconductor Corporation Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC
US6388272B1 (en) 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
US6573128B1 (en) 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
US9515135B2 (en) * 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US7026650B2 (en) 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL87348C (xx) * 1954-03-19 1900-01-01
US2831786A (en) * 1954-06-28 1958-04-22 p type
NL231940A (xx) * 1956-05-15
DE1073110B (de) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern
US2937323A (en) * 1958-05-29 1960-05-17 Westinghouse Electric Corp Fused junctions in silicon carbide

Also Published As

Publication number Publication date
CH372760A (de) 1963-10-31
NL108185C (xx)
GB915182A (en) 1963-01-09
DE1105067B (de) 1961-04-20
US3047439A (en) 1962-07-31
FR1233420A (fr) 1960-10-12

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