NL104644C - - Google Patents

Info

Publication number
NL104644C
NL104644C NL104644DA NL104644C NL 104644 C NL104644 C NL 104644C NL 104644D A NL104644D A NL 104644DA NL 104644 C NL104644 C NL 104644C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL104644C publication Critical patent/NL104644C/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL104644D 1959-09-18 NL104644C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL243511 1959-09-18

Publications (1)

Publication Number Publication Date
NL104644C true NL104644C (en)

Family

ID=19751930

Family Applications (2)

Application Number Title Priority Date Filing Date
NL104644D NL104644C (en) 1959-09-18
NL243511D NL243511A (en) 1959-09-18

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL243511D NL243511A (en) 1959-09-18

Country Status (4)

Country Link
US (1) US3194691A (en)
DE (1) DE1256202B (en)
GB (1) GB931992A (en)
NL (2) NL243511A (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE635380A (en) * 1962-07-24
GB1060474A (en) * 1963-03-27 1967-03-01 Siemens Ag The production of monocrystalline semiconductor bodies of silicon or germanium
DE1251721B (en) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Method for producing semiconductor stalls, preferably semiconductor stalls with adjustable, for example constant, foreign matter concentration
US3329884A (en) * 1964-06-08 1967-07-04 Bell Telephone Labor Inc Frequency multiplier utilizing a hybrid junction to provide isolation between the input and output terminals
DE1619994B2 (en) * 1967-03-09 1976-07-15 Siemens AG, 1000 Berlin und 8000 München PROCESS FOR GROWING A ROD-SHAPED, DISPLACEMENT-FREE SINGLE CRYSTAL OF SILICON BY CRUCIBLE-FREE ZONE MELTING
NL171309C (en) * 1970-03-02 1983-03-01 Hitachi Ltd METHOD FOR THE MANUFACTURE OF A SEMICONDUCTOR BODY FORMING A SILICONE DIOXIDE LAYER ON A SURFACE OF A SILICONE MONOCRYSTALLINE BODY
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
IT943198B (en) * 1970-12-11 1973-04-02 Philips Nv PROCEDURE FOR THE MANUFACTURE OF SEMICONDUCTOR MONOCRYSTALS
JPS5027480B1 (en) * 1971-07-28 1975-09-08
DE2234512C3 (en) * 1972-07-13 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod
JPS6379790A (en) * 1986-09-22 1988-04-09 Toshiba Corp Crystal pulling up device
US5069743A (en) * 1990-04-11 1991-12-03 Hughes Aircraft Company Orientation control of float-zone grown TiC crystals
JPH042683A (en) * 1990-04-16 1992-01-07 Chichibu Cement Co Ltd Production of rutile single crystal
DE4323793A1 (en) * 1993-07-15 1995-01-19 Wacker Chemitronic Process for the production of rods or blocks from semiconductor material which expands on solidification by crystallizing a melt produced from granules, and device for carrying it out

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2651831A (en) * 1950-07-24 1953-09-15 Bell Telephone Labor Inc Semiconductor translating device
US3018539A (en) * 1956-11-06 1962-01-30 Motorola Inc Diffused base transistor and method of making same
US2981875A (en) * 1957-10-07 1961-04-25 Motorola Inc Semiconductor device and method of making the same

Also Published As

Publication number Publication date
GB931992A (en) 1963-07-24
DE1256202B (en) 1967-12-14
US3194691A (en) 1965-07-13
NL243511A (en)

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