NL103828C - - Google Patents

Info

Publication number
NL103828C
NL103828C NL103828DA NL103828C NL 103828 C NL103828 C NL 103828C NL 103828D A NL103828D A NL 103828DA NL 103828 C NL103828 C NL 103828C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL103828C publication Critical patent/NL103828C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL103828D 1956-03-30 NL103828C (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US575239A US2829999A (en) 1956-03-30 1956-03-30 Fused junction silicon semiconductor device

Publications (1)

Publication Number Publication Date
NL103828C true NL103828C (en:Method)

Family

ID=24299482

Family Applications (2)

Application Number Title Priority Date Filing Date
NL103828D NL103828C (en:Method) 1956-03-30
NL215386D NL215386A (en:Method) 1956-03-30

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL215386D NL215386A (en:Method) 1956-03-30

Country Status (6)

Country Link
US (1) US2829999A (en:Method)
BE (1) BE556231A (en:Method)
CH (1) CH361864A (en:Method)
FR (1) FR1173287A (en:Method)
GB (1) GB820040A (en:Method)
NL (2) NL215386A (en:Method)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1067936B (en:Method) * 1958-02-04 1959-10-29
US2937963A (en) * 1958-07-14 1960-05-24 Int Rectifier Corp Temperature compensating zener diode construction
US3076731A (en) * 1958-08-04 1963-02-05 Hughes Aircraft Co Semiconductor devices and method of making the same
NL232826A (en:Method) * 1958-10-31
US3124493A (en) * 1959-01-26 1964-03-10 Method for making the same
US3027501A (en) * 1959-09-29 1962-03-27 Bell Telephone Labor Inc Semiconductive device
US3053998A (en) * 1959-10-14 1962-09-11 Bell Telephone Labor Inc Three stable state semiconductive device
US3211595A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co P-type alloy bonding of semiconductors using a boron-gold alloy
NL259797A (en:Method) * 1960-03-24
NL262701A (en:Method) * 1960-03-25
US3148052A (en) * 1961-02-27 1964-09-08 Westinghouse Electric Corp Boron doping alloys
US3148274A (en) * 1961-07-27 1964-09-08 Ibm Binary adder
US3777227A (en) * 1972-08-21 1973-12-04 Westinghouse Electric Corp Double diffused high voltage, high current npn transistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL82014C (en:Method) * 1949-11-30
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
US2735050A (en) * 1952-10-22 1956-02-14 Liquid soldering process and articles

Also Published As

Publication number Publication date
NL215386A (en:Method)
US2829999A (en) 1958-04-08
BE556231A (en:Method)
CH361864A (fr) 1962-05-15
GB820040A (en) 1959-09-16
FR1173287A (fr) 1959-02-23

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