BE556231A - - Google Patents
Info
- Publication number
- BE556231A BE556231A BE556231DA BE556231A BE 556231 A BE556231 A BE 556231A BE 556231D A BE556231D A BE 556231DA BE 556231 A BE556231 A BE 556231A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US575239A US2829999A (en) | 1956-03-30 | 1956-03-30 | Fused junction silicon semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
BE556231A true BE556231A (xx) |
Family
ID=24299482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE556231D BE556231A (xx) | 1956-03-30 |
Country Status (6)
Country | Link |
---|---|
US (1) | US2829999A (xx) |
BE (1) | BE556231A (xx) |
CH (1) | CH361864A (xx) |
FR (1) | FR1173287A (xx) |
GB (1) | GB820040A (xx) |
NL (2) | NL103828C (xx) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1170082B (de) * | 1960-03-25 | 1964-05-14 | Western Electric Co | Verfahren zum Herstellen von Halbleiterbauelementen |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL237782A (xx) * | 1958-02-04 | 1900-01-01 | ||
US2937963A (en) * | 1958-07-14 | 1960-05-24 | Int Rectifier Corp | Temperature compensating zener diode construction |
US3076731A (en) * | 1958-08-04 | 1963-02-05 | Hughes Aircraft Co | Semiconductor devices and method of making the same |
NL232826A (xx) * | 1958-10-31 | |||
US3124493A (en) * | 1959-01-26 | 1964-03-10 | Method for making the same | |
US3027501A (en) * | 1959-09-29 | 1962-03-27 | Bell Telephone Labor Inc | Semiconductive device |
US3053998A (en) * | 1959-10-14 | 1962-09-11 | Bell Telephone Labor Inc | Three stable state semiconductive device |
US3211595A (en) * | 1959-11-02 | 1965-10-12 | Hughes Aircraft Co | P-type alloy bonding of semiconductors using a boron-gold alloy |
NL259797A (xx) * | 1960-03-24 | |||
US3148052A (en) * | 1961-02-27 | 1964-09-08 | Westinghouse Electric Corp | Boron doping alloys |
US3148274A (en) * | 1961-07-27 | 1964-09-08 | Ibm | Binary adder |
US3777227A (en) * | 1972-08-21 | 1973-12-04 | Westinghouse Electric Corp | Double diffused high voltage, high current npn transistor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE500302A (xx) * | 1949-11-30 | |||
US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
NL182212B (nl) * | 1952-10-22 | Nemag Nv | Grijper. |
-
0
- BE BE556231D patent/BE556231A/xx unknown
- NL NL215386D patent/NL215386A/xx unknown
- NL NL103828D patent/NL103828C/xx active
-
1956
- 1956-03-30 US US575239A patent/US2829999A/en not_active Expired - Lifetime
-
1957
- 1957-03-12 GB GB8168/57A patent/GB820040A/en not_active Expired
- 1957-03-22 FR FR1173287D patent/FR1173287A/fr not_active Expired
- 1957-03-25 CH CH361864D patent/CH361864A/fr unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1170082B (de) * | 1960-03-25 | 1964-05-14 | Western Electric Co | Verfahren zum Herstellen von Halbleiterbauelementen |
Also Published As
Publication number | Publication date |
---|---|
CH361864A (fr) | 1962-05-15 |
FR1173287A (fr) | 1959-02-23 |
GB820040A (en) | 1959-09-16 |
NL103828C (xx) | |
NL215386A (xx) | |
US2829999A (en) | 1958-04-08 |