NL1037473A

NL1037473A - SEMICONDUCTOR TUNNEL ESTABLISHMENT WHICH THE PLACE OF SUCCESSIVE SEMICONDUCTOR TREATMENT OF SUCCESSIVE traveling therethrough SEMICONDUCTOR SUBSTRATE-SECTIONS AND WHICH ALSO IN IT MORE STRIP-SHAPED MEDIUM FEED ESTABLISHMENTS IN AT LEAST THE TOP OF TUNNEL BLOCK WILL BE INCLUDED FOR A CONTINUOUS SUPPLY OF AT LEAST ALSO THE COMBINATION OF PARTICLES A CARRYING MEDIUM IN A GAS-SHAPED OR VAPORABLE LIQUID FORM.

Info

Publication number: NL1037473A
Application number: NL1037473A
Authority: NL
Inventors: Edward Bok
Original assignee: Edward Bok
Priority date: 2009-11-17
Filing date: 2009-11-17
Publication date: 2011-05-18
Also published as: NL1037473C2

Description

Semiconductor tunnel-opstelling, waarin het plaatsvinden van opvolgende semiconductor behandelingen van opvolgende erdoorheen verplaatsende semiconductor substraat-gedeeltes en waarbij mede daarin meerdere stripvormige medium toevoer-inrichtingen in tenminste het boventunnelblok ervan zijn opgenomen voor' een ononderbroken toevoer van tenminste mede de combinatie van deeltjes van een draagmedium in een gasvormige - of verdampbare vloeibare vorm ervan.Semiconductor tunnel arrangement, in which subsequent semiconductor treatments of subsequent semiconductor substrate parts moving through it take place and in which a plurality of strip-shaped medium feed devices are included therein in at least its upper tunnel block for an uninterrupted supply of at least the combination of particles of a carrier medium in a gaseous or vaporizable liquid form thereof.

De semiconductor substraat transf-er/behandelings-tunnelopstelling volgens de uitvinding bevat een stripvormige medium-toevoerinrichting, welke tenminste gedeeltelijk is opgenomen in het boventunnelblok ervan ten behoeve van het daarin ononderbroken toevoeren van tenminste de combinatie van deeltjes van een semiconductor draagmedium, deeltjes van een verdampbaar vloeibaar draagmedium..en deeltjes van een semiconductor sqbstantie.The semiconductor substrate transfer / treatment tunnel arrangement according to the invention comprises a strip-shaped medium supply device which is at least partially accommodated in its upper tunnel block for the purpose of continuously supplying therein at least the combination of particles of a semiconductor support medium, particles of a vaporizable liquid carrier medium ... and particles of a semiconductor sqbstance.

Daarbij daarin typisch tenminste een drietal opvolgende meng-inrichtingen ten behoeve van in de eerste meng-inrichting ervan het mengen van een typisch laag percentage van een vloeibaar draagmedium met tenminste deeltjes van zulk een op te brengen semiconductor substantie, in de tweede, daarop-volgende, typisch eronder gelegen meng-inrichting het mengen van deze combinatie met een hoog percentage vloeibaar draagmedium en in de derde, daaropvolgende, typisch eveneens daaronder gelegen meng-inrichting het mengen van deze combinatie met een hoog percentage aanvullend draagmedium.Herein therein typically at least three successive mixing devices for mixing in the first mixing device thereof a typically low percentage of a liquid carrier medium with at least particles of such a semiconductor substance to be applied, in the second, subsequent , typically below-mixing device mixing this combination with a high percentage of liquid carrier and in the third, subsequent, typically also below-mixing device mixing this combination with a high percentage of additional carrier.

Dit draagmedium kan daarbij bestaan uit vloeibaar - of gasvormig draagmedium, typisch N2.This carrier medium can consist of liquid or gaseous carrier medium, typically N2.

Bij toepassing van zulk een combinatie van vloeibaar -en gasvormig draagmedium en deeltjes van een semiconductor substantie in vaste vorm ervan is een zeer hoog percentage ervan noodzakelijk. .When using such a combination of liquid and gaseous carrier medium and particles of a semiconductor substance in its solid form, a very high percentage thereof is necessary. .

Zulks, doordat veelal de breedte van de centrale i tunnel-doorgang typisch 200 mm, de verplaatsings-snelheid van de opvolgende substraat—gedeeltes typisch slechts 2 mm per seconde, en de op te brengen hoogte ervan typisch minder dan 20 micrometer is, met aldus het totale toegevoerde volume van deze toegevóerde:. substantie minder dan 8 mm3 per seconde.This is because, generally, the width of the central tunnel passage is typically 200 mm, the displacement speed of the subsequent substrate portions is typically only 2 mm per second, and its height to be applied is typically less than 20 micrometers, thus the total supplied volume of this supplied :. substance less than 8 mm3 per second.

B£j een te bewerkstelligen hoogte van een vloeibare hecht-substantie van zelfs, typisch minder dan 1 ;im is aldus een circa 1000-voudig groter toegevoerd volume van deze combinatie ervan met deze draagmediums gewenst-;Thus, a height to be achieved of a liquid adhesive substance of even, typically less than 1, an approximately 1000-fold greater supplied volume of this combination thereof with these carrier media is desired.

Aldus de ideale mogelijke toepassing van de combinatie van vloeibaar - en gasvormig draagmedium.Thus the ideal possible application of the combination of liquid and gaseous carrier medium.

Deze medium-toevoerinrichting is aangegeven in dè Figuur 1.This medium supply device is indicated in Figure 1.

Figuur 2 toont daarbij een dwarsdoorsnede ervan en waarbij het aangeven van een groot aantal naast elkaar gelegen medium-afvoergroeven in het onder-gedeelte ervan.Figure 2 shows a cross-section thereof and in which the indication of a large number of adjacent medium discharge grooves in the lower part thereof.

Daarbij eveneens in het boventunnelblok achter deze combinatie van de stripvormige medium-toevoerinrichting en de daarop-volgende stripvormige afvoersectie voor dit gasvormige medium de opstelling van een stripvormige verdampings—inrichting, Figuur 3, met daarachter tenminste mede een stripvormige afvoersectie ten behoeve van nagenoeg de gehele afvoer van de combinatie van het gevormde dampvormige medium en een resterend gedeelte van het gasvormige medium.Also in the upper tunnel block behind this combination of the strip-shaped medium supply device and the subsequent strip-shaped discharge section for this gaseous medium the arrangement of a strip-shaped evaporator, Figure 3, with at least partly a strip-shaped discharge section for substantially the entire discharge of the combination of the vapor medium formed and a remaining portion of the gaseous medium.

Daarbij in deze verdampings—inrichting de mogelijke toepassing van een uitwisselbare stripvorraige transducer-opstelling ten behoeve van het tenminste fungeren ervan als een zodanige warmtebron, dat daarmede verdamping van dit typisch laag-kokende vloeibare draagmedium plaats vindt.In addition, the possible use of an interchangeable strip-shaped transducer arrangement in this evaporator for the purpose of at least acting as a heat source such that evaporation of this typically low-boiling liquid carrier medium takes place.

.Als gunstig kenmerk van deze inrichting, dat daarbij bij het afvoeren van deze combinatie uit deze medium-toevoerinrichting het daarop-volgende gedeelte van het boventunnelblok reeds een grotere hoogte heeft dan de breedte van het onder-afvoergedeelte van deze inrichting en waarbij daarin reeds onmiddellijk het scheiden van het lichte gasvormige medium van de veel zwaardere combinatie van vloeibaar draagmedium en deze deeltjes van een semiconductor substantie plaats vindt.As a favorable feature of this device, that during the removal of this combination from this medium-supply device, the subsequent part of the upper tunnel block already has a greater height than the width of the lower-discharge part of this device and in which it immediately the separation of the light gaseous medium from the much heavier combination of liquid carrier medium and these particles from a semiconductor substance takes place.

Dit lichte gasvormige medium komt daarbg gelijk boven deze combinatie terecht onder het in een voldoende mate beletten van neerslag van deze deeltjes tegen het daaropvolgende onderwand-gedeelte van dit boventunnelblok.This light gaseous medium also ends up directly above this combination, while sufficiently preventing precipitation of these particles against the subsequent bottom wall portion of this upper tunnel block.

Dit onder-gedeelte van deze medium-toevoerinrichting is sterk vergroot aangegeven in de Figuren 4, 5 en 6.This lower part of this medium-supply device is shown in greatly enlarged form in Figures 4, 5 and 6.

Figuur 4 toont reeds sterk vergroot het onder-gedeelte van het medium-toevoergedeelte volgens de Figuur 2 en waarbij onmiddellijk achter het stripvormige toevoer-gedeelte een toenemende hoQgte van deze bovenspleet.Figure 4 already shows greatly enlarged the lower part of the medium supply part according to Figure 2 and with an increasing height of this upper slit immediately behind the strip-shaped supply part.

Figuur 5 toont nog zeer sterk vergroot zulk een onder-gedeelte volgens de Figuur 2 en waarbij het aangeven van het onmiddellijk terecht komen van dit gasvormige draagmedium boven de combinatie van vloeibaar draagmedium en deeltjes van een semiconductor substantie.Figure 5 shows still such a large part of such a lower part according to Figure 2 and in which the indication of the immediate landing of this gaseous carrier medium above the combination of liquid carrier medium and particles of a semiconductor substance.

Figuur 6 toont als alternatief in het boventunnelblok een stripvormige toevoer-inrichting voor gasvormig slot-medium ten behoeve van het bevorderen van de afvoer van dit gasvormige medium via het voorgaande stripvormige afvoerkanaal.Fig. 6 shows, alternatively in the upper tunnel block, a strip-shaped supply device for gaseous lock medium for promoting the discharge of this gaseous medium via the preceding strip-shaped discharge channel.

Figuur 7 toont achter zulk een medium-toevoerinrichting de opname in het boventunnelblok van een uitwisselbare stripvormige electrische verdampings-inrichting ten behoeve van het verdampen van dit vloeibare draagmedium en met afvoer van tenminste mede dit dampvormige medium via de daarop-volgende stripvormige afvoer-sectie in dit blok.Figure 7 shows behind such a medium supply device the inclusion in the upper tunnel block of an exchangeable strip-shaped electric evaporator for the purpose of evaporating this liquid carrier medium and with discharge of at least this vapor-shaped medium via the subsequent strip-shaped discharge section in this block.

Zoals in de bijgaande, gelijktijdig ingediende Octrooiaanvrage is aangegeven en omschreven, vindt in deze toevoer-inrichting reeds een zodanige gelijkmatige menging van deze semiconductor substantie met het vloeibare draagmedium en vervolgens met dit gasvormige medium plaats, dat daarbij door verdamping van dit typisch laag-kokende vloeibare draagmedium het reeds plaatsvinden van een in een veelal voldoende mate egalisatie-proces van het op de opvolgende substraat—gedeeltes neergeslagen semiconductor deeltjes in een vloeibare — of vaste vorm ervan.As indicated and described in the accompanying patent application filed simultaneously, such a uniform mixing of this semiconductor substance with the liquid carrier medium and then with this gaseous medium already takes place in this feed device, thereby evaporating this typically low-boiling medium. liquid carrier medium the already taking place of a process of equalizing to a generally sufficient extent of the semiconductor particles deposited on the subsequent substrate portions in a liquid or solid form thereof.

Figuur 8 toont de medium-toevoerinrichting volgens de Figuur 1 en waarbij daarachter in het boventunnelblok de opname van een stripvormige, tijdens de werking van de tunnel-opstelling roterende nokkenas-opstelling,ten behoeve van het opvolgend op— en neerwaarts verplaatsen van het druk-plaat-gedeelte ervan, met daarin de opname van een dunwandige electrische verdampings-inrichting ten behoeve van het met behulp van deze combinatie plaatsvinden van verdamping van zulk een toegevoerd vloeibaar draagmedium.Figure 8 shows the medium supply device according to Figure 1, and behind which in the upper tunnel block the inclusion of a strip-shaped camshaft arrangement rotating during operation of the tunnel arrangement, for the purpose of successively moving the pressure up and down plate part thereof, containing a thin-walled electric evaporating device for the purpose of the evaporation of such a supplied liquid carrier medium by means of this combination.

Tevens is daarbij elke positie van deze roterende nokkenas boven deze drukplaat in de lengterichting ervan mogelijk.In addition, any position of this rotating camshaft above this pressure plate in its longitudinal direction is also possible.

In een alternatieve uitvoering van deze medium-=-toevoerinrichting vindt daarbg in de eerste meng-inrichting het mengen van deeltjes van een al dan niet vaste semiconductor substantie met hoog-kokend vloeibaar medium plaats en waarbij in de eronder gelegen tweede meng-inrichting het mengen van deze combinatie met een hoog percentage laag-kokend vloeibaar draagmedium plaats vindt en in de eronder-gelegen derde meng-inrichting het mengen van deze combinatie met het gasvormige draagmedium geschiedt.In an alternative embodiment of this medium-= supply device, in the first mixing device, the mixing of particles of a solid or non-solid semiconductor substance with high-boiling liquid medium takes place and wherein the mixing in the second mixing device situated below of this combination with a high percentage of low-boiling liquid carrier medium and mixing of this combination with the gaseous carrier medium takes place in the underlying third mixing device.

- Daarbij vindt typisch in deze eerste verdampings-inrichting het verdampen van het laag-kokende vloeibare draagmedium plaats, met afvoer van het verdampte laag-kokende vloeibare medium, met in de daarop-volgende verdampings-inrichting verdamping van dit hoog-kokende vloeibare draagmedium.In this case, evaporation of the low-boiling liquid carrier medium typically takes place in this first evaporator, with discharge of the evaporated low-boiling liquid medium, with evaporation of this high-boiling liquid carrier medium in the subsequent evaporator.

Verdere bijzonderheden van deze semiconductor tunnel-opstelling volgen uit de hierna volgende beschrijving van de Figuren 1 tot en met 9, bevattende aanvullende details ervan.Further details of this semiconductor tunnel arrangement follow from the description of Figures 1 to 9 below, including additional details thereof.

Tevens zijn de inrichtingen en werkwijzen van deze tunnel-opstelling mogelijk toepasbaar in de tunnel-opstellingen, welke door de -aanvrager gelijktijdig met deze aanvrage zijn ingediend.The devices and methods of this tunnel arrangement may also be applicable to the tunnel arrangements that have been submitted by the applicant simultaneously with this application.

Verder mogelijk de toepassing van de inrichtingen en werkwijzen in deze Octrooi-aanvrage in de semiconductor tunnel-opstellingen van de aanvrager, welke op 23 Juni, 1 Juli en 28 Augustus j.l. zijn ingediend.Furthermore, the application of the devices and methods in this Patent Application may be used in the applicant's semiconductor tunnel arrangements, which are on June 23, July 1, and August 28, last. have been submitted.

Tevens zijn de in deze Octrooi-aanvragen omschreven inrichtingen en werkwijzen mogelijk toepasbaar in deze semiconductor tunnel-opstelling.The devices and methods described in these Patent Applications may also be applicable to this semiconductor tunnel arrangement.

Figuur 1 toont de stripvormige medium- toevoer-inrichting 10 van de semiconductor substraat transfer/ behandelings-tunnel 12.Figure 1 shows the strip-shaped medium supply device 10 of the semiconductor substrate transfer / treatment tunnel 12.

Daarbij óp het cilindrische medium toevoer-compartiment 14 ervan de aansluiting van tenminste één medium toevoer-leiding 16 ten behoeve van het tijdens de werking van deze tunnel-opstelling ononderbroken erdoorheen toevoeren van typisch laag-kokend vloeibaar draagmédium 18 en een medium toevoer-leiding 20 voor de toevoer van de combinatie van typisch hoog-kokend vloeibaar medium 22 en deeltjes 24 van een semiconductor substantie in vloeibare of vaste vorm ervan, welke daartoe ononderbroken wordt aangevoerd vanaf de meng-inrichting.26.Thereby, at its cylindrical medium supply compartment 14, the connection of at least one medium supply line 16 for the continuous supply of typically low-boiling liquid carrier medium 18 and a medium supply line 20 during the operation of this tunnel arrangement. for supplying the combination of typical high-boiling liquid medium 22 and particles 24 of a semiconductor substance in liquid or solid form thereof, which is continuously supplied for this purpose from the mixer 26.

Binnen het kader van de uitvinding is het mogelijk, dat daarbij in zulk een meng-inrichting zulke deeltjes 24 van een semiconductor substantie in vloeibare of vaste vorm ervan zijn opgenomen in een in vergelijking aanzienlijk hoog percentage van dit vloeibare draagmédium 22.Within the scope of the invention it is possible that such particles 24 of a semiconductor substance in liquid or solid form are incorporated in such a mixing device in a comparatively considerably high percentage of this liquid carrier medium 22.

Details van zulk een toevoer-inrichting zijn reeds aangegeven in de Octrooi-aanvrage No. 1037067 van de aanvrager.Details of such a feed device have already been indicated in the patent application no. 1037067 of the applicant.

Dit medium toevoer-compartiment 14 bevindt zich in het uitwisselbare boven-mediumtoevoerblok 34, welke met behulp van schroefbouten en afdichtringen drukdicht is vastgezet op het eveneens stripvormige onder-mediumtoevoerblok 36.This medium supply compartment 14 is located in the exchangeable upper medium supply block 34, which is pressure-tightly fixed on the also strip-shaped lower medium supply block 36 by means of screw bolts and sealing rings.

Dit onderblok bestaat daarbij mede uit de tegen elkaar gelegen bloksecties 38 en 40 en waarbij daarin de opname van een groot aantal in dwarsrichting van deze medium toevoer-inrichting naast elkaar gelegen jim wijde en diepe groeven 42, zoals is aangegeven in de Figuur 2 en sterk vergroot in de Figuren 3,4 en 5.This lower block also consists of the block sections 38 and 40 situated opposite each other and in which the accommodation of a large number of transverse and deep grooves 42 situated adjacent to each other in this direction, as shown in Figure 2 and strong enlarged in Figures 3,4 and 5.

Dit medium-toevoerblok 36 is eveneens met behulp van schroefbouten en O-ringen drukdicht bevestigd op het boventunnelblok 44.This medium supply block 36 is also pressure-tightly attached to the upper tunnel block 44 by means of screw bolts and O-rings.

Daarbij zijn met behulp van schroefbouten deze ultra-vlakke bloksecties 38 en 40 eveneens in voldoende mate drukdicht tegen elkaar bevestigd.With the aid of screw bolts, these ultra-flat block sections 38 and 40 are also fastened pressure-tightly against each other.

De smalle onder-uiteinden 46 en 48 van deze bloksecties 38 en 40 strekken zich daarbij in benedenwaartse richting uit tot het stripvormige onderwand-gedeelte 50 van dit boventunnelblok 44.The narrow lower ends 46 and 48 of these block sections 38 and 40 then extend downwardly to the strip-shaped lower wall portion 50 of this upper tunnel block 44.

Tussen het boventunnelblok 44 en het ondértunnelblok 52 bevindt zich het centrale semiconductor behandelings-gedeelte 54, waardoorheen het plaatsvinden van een ononderbroken lineaire verplaatsing onder typisch slechts 2 mm per seconde van de opvolgende-semiconductor substraat-gedeeltes 56, met de ononderbroken folie of band 58 als een tenminste tijdelijke semiconductor onderlaag ervan tijdens de ononderbroken verplaatsing ervan door deze tunnel-opstelling.Between the upper tunnel block 44 and the lower tunnel block 52 is the central semiconductor treatment section 54, through which there is an uninterrupted linear displacement under typically only 2 mm per second of the subsequent semiconductor substrate sections 56, with the continuous film or tape 58 as an at least temporary semiconductor substrate thereof during its uninterrupted movement through this tunnel arrangement.

Onder dit cilindrische compartiment 14 bevindt zich het cilindrische compartiment 28, waarop de aansluiting van tenminste één toevoerleiding 30 voor gasvormig draag-medium 32.Below this cylindrical compartment 14 is located the cylindrical compartment 28, on which the connection of at least one supply line 30 for gaseous carrier medium 32.

Via de toevoergroeven 42 vindt een ononderbroken toevoer van de combinatie van gasvormig medium 32, deeltjes vloeibaar draagmedium 22 en deeltjes 24 van een semiconductor substantie plaats.Via the feed grooves 42 an uninterrupted feed of the combination of gaseous medium 32, particles of liquid carrier medium 22 and particles 24 of a semiconductor substance takes place.

Daarbij vindt onder deze toevoer-inrichting in de bovenspleet 60 onmiddellgk tenminste grotendeels afscheiding van het lichte gasvormige medium 32 van deze combinatie van vloeibaar draagmedium en deeltjes plaats, hetgeen sterk vergroot is aangegeven in de Figuur 3.In addition, under this feed device in the upper slit 60 instantaneously at least for the most part separation of the light gaseous medium 32 from this combination of liquid carrier medium and particles takes place, which is shown greatly enlarged in Figure 3.

Zoals is aangegeven in deze Figuur 2, zijn in de beide dwars-uiteinden 64 en 66 van dit ondertoevoerblok 36 de medium-sloten 68 en 70 opgenomen, waarbij via de toevoer-leidingen 72 en 74 de ononderbroken toevoer van gasvormig slotmedium 76 naar de groeven 78 en 80 plaats vindt en via de stripvormige .spleten 82 en 84 afvoer ervan naar de afvoer-groeven 86 en 88, met aansluiting ervan op de afvoer-leidingen 90 en 92, geschiedt.As indicated in this Figure 2, the medium slots 68 and 70 are included in the two transverse ends 64 and 66 of this lower supply block 36, the continuous supply of gaseous lock medium 76 to the grooves via the supply lines 72 and 74. 78 and 80 takes place and via the strip-shaped slits 82 and 84 discharge takes place to the discharge grooves 86 and 88, with connection thereof to the discharge lines 90 and 92.

Deze medium-sloten ten behoeve van het beletten van het ontsnappen van medium uit het centrale medium-toevoer-gedeelte 94 van de bovenspleet 60.These fluid locks for preventing fluid from escaping from the central fluid supply portion 94 of the upper slit 60.

Onmiddellijk achter deze medium-toevoerinrichting 10 in het boventunnelblok 44 de opname van de stripvormige medium-afvoergroef 96, welke zich ter plaatse van het centrale semiconductor behandelings-gedeelte van deze tunnel-opstelling uitstrekt in dwarsrichting ervan, met daarop de aansluiting van tenminste één medium "afvoer-leiding 98 ten behoeve van de afvoer van tenminste het grootste gedeelte van het toegevoerde gasvormige draag-medium 12.Immediately behind this medium supply device 10 in the upper tunnel block 44 the receiving of the strip-shaped medium discharge groove 96, which extends at the location of the central semiconductor treatment part of this tunnel arrangement in transverse direction, with the connection of at least one medium thereon "discharge line 98 for the discharge of at least the major part of the supplied gaseous carrier medium 12.

Dit afvoer-gedeelte is sterk vergroot aangegeven in de Figuren 1A en 3.This discharge section is indicated in a highly enlarged way in Figures 1A and 3.

In een gunstige uitvoering van dit afvoer-systeem voor het gasvormige medium 32 vindt in de daarop-volgende medium-toevoergroef 100, welke eveneens is opgenomen in het boventunnelblok 44, de ononderbroken toevoer van typisch hetzelfde gasvormige medium 32 plaats onder het bewerkstelligen van het stripvormige medium-slot 102.In a favorable embodiment of this discharge system for the gaseous medium 32, in the subsequent medium supply groove 100, which is also included in the upper tunnel block 44, the continuous supply of typically the same gaseous medium 32 takes place while effecting the strip-shaped medium slot 102.

Zulks ten behoeve van het vermijden van neerslag van deze deeltjes 24 tegen het daarop-volgende onderwand-gedeelte 104 van het boventunnelblok 44.For the purpose of avoiding precipitation of these particles 24 against the subsequent bottom wall portion 104 of the upper tunnel block 44.

Dit medium-slot is sterk vergroot aangegeven in de Figuur 4 en verder aangegeven en omschreven in de bijgaande Octrooi-aanvrage, waarbij de toepassing van de combinatie van een zeer hoog-kokende vloeibare hecht-substantie en tenminste zulk een combinatie van laag-kokend vloeibaar draagmedium en gasvormig draagmedium 32.This medium slot is shown highly enlarged in Figure 4 and further indicated and described in the accompanying Patent Application, wherein the use of the combination of a very high-boiling liquid adhesive substance and at least such a combination of low-boiling liquid carrier medium and gaseous carrier medium 32.

Achter deze medium-toevoerinrichting 10 is in dit boventunnelblok 44 de uitwisselbare opstelling 106 opgenomen, bevattende in het compartiment 108 ervan de inrichting 110/118 ten behoeve van het tenminste fungeren ervan als een warmtebron voor het verdampen van dit toegevoerde laag-kokende vloeibare draagmedium 18 onder neerslag van de deeltjes 24 van zulk een semiconductor substantie in een vaste — of vloeibare vorm ervan op de opvolgende eronderlangs verplaatsende semiconductor substraat-gedeeltes 56.Behind this medium supply device 10 is in this upper tunnel block 44 the interchangeable arrangement 106, containing in its compartment 108 the device 110/118 for at least functioning as a heat source for evaporating this supplied low-boiling liquid carrier medium 18 depositing the particles 24 of such a semiconductor substance in a solid or liquid form thereof on the subsequent semiconductor substrate portions 56 moving therebetween.

Daarbij in een gunstige uitvoering van deze tunnel-opstelling 12 de toepassing van de stripvormige transducer-opstelling 112 onmiddellijk boven het bovenspleet-gedeelte 114, Figuur 6, en waarbij door de tevens trillende werking ervan het bevorderen van een gelijkmatige neerslag van deze deeltjes 24 op deze ononderbroken eronderlangs verplaatsende semiconductor substraat-gedeeltes 56.Thereby, in a favorable embodiment of this tunnel arrangement 12, the use of the strip-shaped transducer arrangement 112 immediately above the upper slit portion 114, Figure 6, and wherein, due to its also vibrating action, promoting a uniform deposition of these particles 24 on these continuous semiconductor substrate portions 56 moving underneath.

Dit egalisatie-proces is tevens aangegeven en omschreven in de bijgaande Octrooi-aanvrage.This equalization process is also indicated and described in the accompanying Patent Application.

Dit tunnel-gedeelte, bevattende de transducer 112, is tevens zeer sterk vergroot aangegeven in de Figuren gA, B en C .This tunnel portion, including the transducer 112, is also shown to be greatly enlarged in Figures gA, B and C.

Daarbij in de Figuur 6^ het tonen van het begin-gedeelte van deze transducer, met het onderhouden van een nog beperkte hoogte van de bovenspleet-sectie 114 en waarbij een optimale tril-conditie ervan onmiddellijk boven de opvolgende, eronderlangs verplaatsende substraat-gedeeltes.In addition, in Figure 6, showing the starting portion of this transducer, maintaining a still limited height of the upper slit section 114 and having an optimum vibrating condition thereof immediately above the subsequent substrate portions moving therebetween.

Tijdens het trillen van deze transducer vindt daarbij de combinatie van een snelle neerwaartse verplaatsing en een langzame opwaartse verplaatsing plaats ten behoeve van tenminste mede een reeds optimale neerslag van de deeltjes 24 van een semiconductor substantie op deze opvolgende eronderlangs verplaatsende substraat-gedeeltes en zulks in combinatie met het starten van verdamping van het typisch laag-kokende vloeibare draagmedium 18.During the vibration of this transducer, the combination of a rapid downward displacement and a slow upward displacement takes place for the benefit of at least partly an already optimum deposition of the particles 24 of a semiconductor substance on these successive substrate sections moving along it and this in combination with the start of evaporation of the typically low-boiling liquid carrier medium 18.

Daarbij de toepassing van de electrische trilling-opwekinrichting, welke is aangegeven en omschreven in de Octrooi-aanvrage Mo. 1037066 .The use of the electric vibration generating device, which is indicated and described in the patent application Mo. 1037066.

De Figuur 6® toont het eind-gedeelte van deze transducer en waarbij een aanzienlijk grotere hoogte van dit bovenspleet-gedeelte 114 ten behoeve van het erdoorheen afvoeren van het verdampte vloeibare draagmedium 18 naar de daaropvolgende stripvormige medium-afvoersectie 116 in het boventunnelblok 44.Fig. 6® shows the end portion of this transducer and wherein a considerably greater height of this upper slit portion 114 for discharging the evaporated liquid carrier medium 18 through it to the subsequent strip-shaped medium discharge section 116 in the upper tunnel block 44.

Figuur toont nog zeer sterk vergroot het bovenspleet-gedeelte 114 achter deze transducer en waarbij het aangegeven zijn van de afvoer van deze damp en de neerslag van deze deeltjes 24 op de opvolgende, eronderlangs verplaatsende substraat-gedeeltes 56.Figure 4 shows still a very large enlarged view of the upper slit portion 114 behind this transducer and indicating the discharge of this vapor and the precipitation of these particles 24 on the subsequent substrate portions 56 moving below it.

Als een eerste alternatief voor deze transducer 112 in het compartiment 108 de opname van een dunwandige metalen electrische verwarmings-strip ten behoeve van het verdampen van dit vloeibare draagmedium en welke is aangegeven in de Figuur 1®.As a first alternative to this transducer 112 in the compartment 108 the incorporation of a thin-walled metal electrical heating strip for the purpose of vaporizing this liquid carrier medium and which is indicated in Figure 1®.

Als een tweede alternatief voor deze trillende warmtebron de toepassing in de uitwisselbare inrichting 120 van de roterende nokkenas-opstelling 122, welke is aangegeven in de Figuur 7 , en waarbij in het drukplaat-gedeelte 124 ervan de opname van de electrische verwarmings-strip 126.As a second alternative to this vibrating heat source, the use in the exchangeable device 120 of the rotary camshaft arrangement 122, which is shown in Figure 7, and wherein in the printing plate portion 124 thereof is the receiving of the electric heating strip 126.

Daarbij met behulp van deze opstelling het plaatsvinden van verdamping van dit draagmedium onder tril-conditie van deze drukplaat.Thereby, with the aid of this arrangement, evaporation of this carrier medium takes place under the vibrating condition of this printing plate.

Daarbij elke mogelijke positie van deze roterende nokkenas boven deze drukplaat.Every possible position of this rotating camshaft above this pressure plate.

Figuur 8 toont nog wederom deze dunwandige electrische verwarmings-inrichting 118 in het compartiment 108 van deze uitwisselbare opstelling 106.Figure 8 again shows this thin-walled electric heating device 118 in the compartment 108 of this exchangeable arrangement 106.

Daarbij toont de Figuur 8A zeer sterk vergroot het boven-spleetgedeelte 114 boven de di-electrische laag 128, welke deel uitmaakt van het substraat-gedeelte 56 en waarop een (sub) jim hoge laag typisch vloeibare hecht-substantie 130 is neergeslagen.Fig. 8A shows very greatly enlarged the upper slit portion 114 above the dielectric layer 128, which forms part of the substrate portion 56 and on which a (sub) jim high layer of typically liquid adhesive substance 130 is deposited.

Figuur 8® toont nog zeer sterk vergroot het bovenspleet-gedeelte 114 boven de semiconductor substraat transfer-band 58, met daarop ter plaatse van het centrale semiconductor behandelings-gedeelte van de tunnel het neergeslagen zijn van de al dan niet verwijderbare (sub) jam hoge laag vloeibare medium 132.Figure 8® shows the top slit portion 114 above the semiconductor substrate transfer belt 58 with the superimposition of the (sub) jam high or lowered at the location of the central semiconductor treatment part of the tunnel. low fluid medium 132.

Figuur 9 toont in de tunnel-opstelling 12 de stripvormige toevoer-inrichting 10, waarbij daarin vanuit de meng-inrichting 26 de ononderbroken toevoer van de combinatie van hoog-kokend vloeibaar draagmedium 22 en deeltjes 24 van een semiconductor substantie in een vaste- of vloeibare vorm ervan.Figure 9 shows in the tunnel arrangement 12 the strip-shaped feed device 10, in which there from the mixing device 26 the uninterrupted supply of the combination of high-boiling liquid carrier medium 22 and particles 24 of a semiconductor substance in a solid or liquid shape thereof.

Daarby in de eronder gelegen cilindrische meng-inrichting 14 het mengen van deze combinatie met het daarin ononderbroken toegevoerde laag-kokende vloeibare draag-medium 18 en in de daaronder-gelegen cilindrische meng-inrichting 28 het mengen ervan met dit gasvormige medium 32.In addition, in the underlying cylindrical mixing device 14, mixing this combination with the low-boiling liquid carrier medium 18 continuously supplied therein and in the underlying cylindrical mixing device 28 mixing it with this gaseous medium 32.

Daarbij achter deze medium-toevoerinrichting 10 zulk een uitwisselbare opstelling 132, met in het compartiment 134 ervan de opname van de electrische verwarmings-strip 118 ten behoeve van het daarmede verdampen van het mede toegevoerde laag-kokende vloeibare draagmedium 18, met daarachter het afvoer-gedeelte 116 ten behoeve van de afvoer van de bewerkstelligde damp 136 onder het verkrijgen van een typisch urn hoge laag 138 van de combinatie van dit hoog-kokende vloeibare draagmedium 22 en deze deeltjes 24 in een veelal reeds voldoende vlakheid ervan.In addition, such an exchangeable arrangement 132 behind this medium-supply device 10, with the compartment 134 thereof accommodating the electric heating strip 118 for the purpose of vaporizing the co-supplied low-boiling liquid carrier medium 18, followed by the discharge part 116 for the discharge of the vapor 136 produced, while obtaining a typical μm high layer 138 of the combination of this high-boiling liquid carrier medium 22 and these particles 24, in many cases already sufficiently flat.

Dit verdampings-proces is sterk vergroot aangegeven in de Figuren 9^ en 9® en zeer sterk vergroot in de Figuren 9^ en 9D.This evaporation process is shown highly enlarged in Figures 9 ^ and 9® and very greatly enlarged in Figures 9 ^ and 9D.

Vervolgens vindt in de daarop-volgende inrichting 106 met behulp van de stripvormige transducer 112 verdamping van dit hoog-kokende vloeibare draagmedium 22 plaats, met afvoer van de gevormde damp 140 via de stripvormige afvoer-sectie 142.Subsequently, in the subsequent device 106, evaporation of this high-boiling liquid carrier medium 22 takes place with the aid of the strip-shaped transducer 112, with discharge of the formed vapor 140 via the strip-shaped discharge section 142.

Dit verdampings-proces is sterk vergroot aangegeven in de Figuren 9® en 9 F.This evaporation process is shown greatly enlarged in Figures 9® and 9F.

Daarbij de bewerkstelliging van een pm hoge en gelijkmatige laag 128 van typisch een vaste di-electrische substantie op de opvolgende substraat-gedeeltes 58 onder typisch een verankering ervan op de in een voorgaand tunnel-gedeelte reeds opgebrachte (sub) urn hoge film 144 van een vloeibare tijdelijke hecht-substantie.Thereby the realization of a µm high and uniform layer 128 of typically a solid dielectric substance on the subsequent substrate portions 58 with typically anchoring thereof to the (sub) µm high film 144 of a film 144 already applied in a preceding tunnel portion liquid temporary adhesive substance.

In het boventunnelblok 44 achter deze afvoer-sectie 142 de opname van de stripvormige verwarmings-inrichting 146 en waarbij door de oven-behandeling daarmede van deze jim hoge laag 128 het smelten ervan plaats vindt onder de vorming van de vloeibare laag 148 ervan.In the upper tunnel block 44 behind this discharge section 142, the inclusion of the strip-shaped heating device 146 and the melting of this jim high layer 128 through the furnace treatment takes place while forming its liquid layer 148.

Daarbij is slechts een zodanig beperkte warmte-toevoer naar dezeopgëbrachte laag 128 benodigd, dat nagenoeg geen Warmte-overdracht naar deze onderliggende combinatie van vlóéibare tijdelijke hechtlaag 144 en de band 58 geschiedt*In this case, only such a limited heat supply to this applied layer 128 is required that virtually no heat transfer takes place to this underlying combination of flammable temporary adhesive layer 144 and the tape 58 *.

Door de daarop-volgènde afkoeling van deze gesmolten laag de bewerkstelliging van ëén p.m hoge vaste .di-electrische laag 150 op deze typisch verwijderbare film 144 van deze tijdelfke hecht-substantie.By the subsequent cooling of this molten layer, the realization of a p.m. high solid dielectric layer 150 on this typically removable film 144 of this temporary adhesive substance.

Deze opvolgende phasen zijn vergroot aangegeven in de Figuren * H en I#These successive phases are indicated in an enlarged way in Figures * H and I #

Figuren 10^» ® en ^ tonen sterk vergroot het in opvolgende phasen onder de strip-vormige trileleroent-opstellingen 112 en 122, met de trillende drukwand 124 ervan, Figuren 6 en 7, en onder de stripvormige warmtebron, Figuur 5, door verdamping van het laag-kokende vloeibare draagmedium 18 geleidelijk in het eronder gelegen bovenspleet-gedeelte 60 opbouwen van een (sub) μm hoge verwijderbare laag van de vloeibare tjjdelijke hecht-substantie 130 op de ononderbroken eronderlangs over het ondertunnelblok 52 verplaatsende opvolgende band-gedeeltes 58.Figures 10 and 3 show greatly enlarged in successive phases below the strip-shaped vibratory rotation arrangements 112 and 122, with the vibrating pressure wall 124 thereof, Figures 6 and 7, and under the strip-shaped heat source, Figure 5, by evaporation of the low-boiling liquid carrier medium 18 gradually building in the upper slit portion 60 below it of a (sub) μm high removable layer of the liquid temporary adhesive substance 130 on the successive belt portions 58 continuously moving along it below the sub-tunnel block 52.

Zulks onder de bewerkstelliging van een veelal voldoende vlakheid er-van aan het einde van zulk een drukwand, zoals is aangegeven in de Figuur 10^ en zeer sterk vergroot in de Figuur 10®.Such under the effect of a generally sufficient flatness thereof at the end of such a pressure wall, as indicated in Fig. 10 and greatly enlarged in Fig. 10®.

Figuren 11^* B en C tónen eveneens sterk vergroot in opvolgende phasen onder zulk een trilelement-opstelling 112/122, met de trillende drukwand 124 ervan, Figuren 6 en 7, en onder de stripvormige warmtebron, Figuur 5, door verdamping van het laag—kokende vloeibare draagmedium 18 geleidelijk in het . eronder gelegen bovenspleet-gedeelte 60 opbouwen van een al dan niet verwijderbare laag van de vloeibare hecht-substantie 130 op de ononderbroken eronderlangs over het ondertunnelblok 52 verplaatsende opvolgende semiconductor substraat-gedeeltes 56.Figures 11 ^ B and C are also greatly enlarged in successive phases under such a vibrating element arrangement 112/122, with its vibrating pressure wall 124, Figures 6 and 7, and under the strip-shaped heat source, Figure 5, by evaporation of the layer Boiling liquid carrier medium 18 gradually into the. superimposed upper slit portion 60 of a removable or non-removable layer of the liquid adhesive substance 130 on the successive semiconductor substrate portions 56 moving therebetween along the sub-tunnel block 52.

Zulks onder de bewerkstelliging van een veelal voldoende vlakheid ervan aan het einde van zulk een inrichting, zoals is aangegeven in de Figuur llC en zeer sterk vergroot aangegeven itt dë Figuur 11®*Under the effect of a generally sufficient flatness thereof at the end of such a device, as indicated in Figure 11C and indicated very strongly in magnitude as compared to Figure 11® *

Figuur Ï2 töoüt veigroot dè tombinatië Vaü dé afvóër-groef 96 en de daarop—volgende toevoergroef 160 voor typisch mede gasvormig slotmedium voor de in het boven-tunnelblok 44 opgenomen medium-toevoerinrichting 10.Figure 12 illustrates the size of the drainage groove 96 and the subsequent feed groove 160 for typical co-gaseous lock medium for the medium feed device 10 included in the upper tunnel block 44.

Door het onderhouden van een onderdruk in de afvoer-passage 152 in dit blok en aldus in het gedeelte 154 voor deze toevoer-inrichting 10 vindt een aanliggen van de reeds bewerkstelligde ultra-vlakke opvolgende substraat-gedeeltes 56, met veelal de di-electrische bovenlaag 128, tegen het stripvormige ultra-vlakke onderwand-gedeelte 156 van het boventunnelblok 44 en de ondervand 158 van het stripvormige gedeelte 40 van deze medium-toevoerinrichting plaats.By maintaining an underpressure in the discharge passage 152 in this block and thus in the portion 154 for this feed device 10, an abutment of the already realized ultra-flat successive substrate portions 56, with often the dielectric top layer, is found. 128, against the strip-shaped ultra-flat bottom wall portion 156 of the upper tunnel block 44 and the bottom bracket 158 of the strip-shaped portion 40 of this medium supply device.

Hierdoor in combinatie met de ononderbroken ultra gelijkmatige toegevoerde en - verdeelde combinatie van dit gasvormige draagmedium 32, vloeibare hoog—kokende deeltjes 22, laag-kokend vloeibaar medium 18 en de deeltjes 24 van een vaste semiconductor substantie de bewerkstelliging van een ultra—gelijkmatige hoogte van de opgebrachte laag van deze ononderbroken toegevöerde combinatie van mediums.As a result, in combination with the continuously ultra-uniformly supplied and distributed combination of this gaseous carrier medium 32, liquid high-boiling particles 22, low-boiling liquid medium 18 and the particles 24 of a solid semiconductor substance, the realization of an ultra-uniform height of the applied layer of this continuously supplied combination of mediums.

Tijdens het af voeren van het gasvormige medium 32 via de stripvormige afvoergroef 96 worden nagjenoeg geen deeltjes 24 van deze semiconductor substantie mede afgevoerd.During the discharge of the gaseous medium 32 via the strip-shaped discharge groove 96, hardly any particles 24 of this semiconductor substance are also removed.

Het behulp van de in dit blok 44 achter deze stripvormige afvoergroef 96 opgenomen toevoergroef 160 en de daarin ononderbroken toegevoerde gasvormige slot—substantie 32 het verder tenminste zeer beperkt houden van verlies van deze deeltjes in hét begin—gedeelte 164 van hét afvoer-compartiment 162.By means of the feed groove 160 included in this block 44 behind this strip-shaped discharge groove 96 and the gaseous lock substance 32 continuously supplied therein, furthermore keeping loss of these particles at least very limited in the starting part 164 of the discharge compartment 162.

Deze combinatie van medium toe - en afvoergroeven zijn reeds aangegeven in de Figuur 5.This combination of medium inlet and outlet grooves are already indicated in Figure 5.

Verder in dit boventunnelblok 44 achter deze combinatie van toe- en afvoergoef de opname van de stripvormige transducer 112 ten behoeve van het tenminste mede verdampen van het toegevoerde laag-kokende vloeibare draagmedium 18.Further, in this upper tunnel block 44, behind this combination of supply and discharge gutters, the recording of the strip-shaped transducer 112 for at least co-evaporating the supplied low-boiling liquid carrier medium 18.

Zulk een combinatie van groeven 96 en 160 als een alternatief voor de toepassing van uitsluitend zulk een afvoergroef 96, zoals is aangegeven in de Figuren 1, 3, 4, 6, 7, 8 en 9.Such a combination of grooves 96 and 160 as an alternative to the use of only such a drain groove 96, as indicated in Figures 1, 3, 4, 6, 7, 8 and 9.

Figuur 13 toont vergroot de stripvormige toevoer-inrichting 10 voor een vloeibare, al dan niet tgdelijke hechtsubstantie in combinatie met hoog-kokend vloeibaar draagmedium.22, laag-kokend vloeibaar draagmedium 18 en gasvormig draagmedium 32·Figure 13 shows an enlarged view of the strip-shaped feed device 10 for a liquid, solid or non-solid adhesive substance in combination with high-boiling liquid carrier medium.22, low-boiling liquid carrier medium 18 and gaseous carrier medium 32

Daarbg vindt t^dens de ononderbroken toevoer van deze combinatie van mediums in het begin—gedeelte 164 van het afvoer-compartiment 162 het gewenst wordende opwaarts ontsnappen van het gasvormige medium 32 uit deze vloeibare mediums plaats, met echter het onvernijdelljjk in een geringe mate opwaarts meenemen van deeltjes van deze substantie 144 en deze vloeibare draagmediums 18 .en 22 onder neerslag ervan tegen het onderwand—gedeelte 166 van het boventunnelblok 44.In addition, during the uninterrupted supply of this combination of mediums in the initial portion 164 of the discharge compartment 162, the desired upward escape of the gaseous medium 32 from these liquid mediums takes place, but with the unavoidable upward movement to a small extent. carrying particles of this substance 144 and these liquid carrier media 18 and 22 while depositing them against the bottom wall portion 166 of the upper tunnel block 44.

Door het zeer beperkte toegevoerde volume per tijdseenheid van deze combinatie van mediums, met een totaal-hoogte van slechts circa 1 mm, is deze neerslag uiterst beperkt en algemeen toelaatbaar.Due to the very limited volume supplied per unit time of this combination of mediums, with a total height of only about 1 mm, this precipitation is extremely limited and generally permissible.

Zulks mede door de aanzienlijke hoogte van het compartiment 162, circa 15 mm ter plaatse van de afvoergroef 96 voor het gasvormige draagmedium 32.This is partly due to the considerable height of the compartment 162, approximately 15 mm at the location of the discharge groove 96 for the gaseous carrier medium 32.

Ooor daarbij dè toepassing van de combinatie van eveneens gasvormig draagmedium 32 en een circa 5 % verdampbaar verdunnings—medium 170 in de- toevoer—groef .160, vindt via deze afvoer-sectie 96 daarmede mede afvoer van deze combinatie van deeltjes vanaf deze onderwand 166 plaats.For this purpose, the use of the combination of also gaseous carrier medium 32 and an approximately 5% vaporizable dilution medium 170 in the supply groove. 160, co-discharge of this combination of particles from this bottom wall 166 via this discharge section 96. place.

Aldus na de uitdrijving van mede dit gasvormige medium resteert slechts een egale vloeibare laag van de combinatie van deze vloeibare mediums 18, 22 en 144, met typisch een hoogte ervan van circa 50 pm.Thus, after the expulsion of this gaseous medium as well, only an even liquid layer of the combination of these liquid mediums 18, 22 and 144, with a height thereof of approximately 50 µm, remains.

Daarbij in een gunstige alternatieve werkwijze uitsluitend de toepassing van laag-kokend vloeibaar draagmedium 18 voor deze deeltjes 144, waardoor achter deze medium toevoer-inrichting slechts ëên benodigde stripvormige verdampings-inrichting ten behoeve van het verdampen ervan.Thereby in a favorable alternative method only the use of low-boiling liquid carrier medium 18 for these particles 144, as a result of which behind this medium supply device only one strip-shaped evaporator device is required for its evaporation.

Onder toepassing van mede hoog-kokend vloeibaar draag- medium 22, met daardoor de toepassing ran een tveede verdampings-inrichting ten behoeve van het verdampen ervan, is zulk eèn extra toevoer voor de combinatie Van jjasvormig draagmedium 32 en een vloeibaar slotmedium 170 ook mogeljjk achter de eerste stripvoroige verdampings-inrichting 112.Using co-high-boiling liquid carrier medium 22, with the use of a second evaporator for the purpose of evaporation, such an additional feed for the combination of jacket-shaped carrier medium 32 and a liquid lock medium 170 is also possible behind the first strip-type evaporator 112.

De Figuur 14 toont de combinatie van een stripvormige verdampings-inrichting 132, met de daarachter gelegen stripvormige tril/verdampings-inrichting 106 volgens de Figuur 9.Figure 14 shows the combination of a strip-shaped evaporator device 132, with the strip-shaped vibrator / evaporator device 106 behind it, according to Figure 9.

Daarbij als alternatief vöör deze eerste inrichting 132 de opname van de combinatie van een strinvormige afvoer-groef 96 voor het basis-draagmedium 32, met daarachter de stripvormige toevoer-groef 160 voor uitsluitend gasvormig slot·medium 32, Figuur 12, indien de toepassing daarbij van deeltjes van een op tebrengen vaste substantie 128.Thereby, as an alternative, this first device 132 accommodates the combination of a linear drain groove 96 for the base support medium 32, followed by the strip-shaped feed groove 160 for exclusively gaseous lock medium 32, Figure 12, if the application is thereby of particles of a solid substance to be applied 128.

Verder daarbij voor deze tveede inrichting in het boventunnelblok 44 achter de 116 voor het verdampte laag-kokende vloeibare draagmedium 22 eveneens zulk een toevoergroef 160 voor typisch gasvormig slot-medium 32.Furthermore, for this additional device in the upper tunnel block 44 behind the 116 for the evaporated low-boiling liquid carrier medium 22, also such a feed groove 160 for typical gaseous lock medium 32.

Verder daarbü achter deze tveede achter de afvoer-groef 142 voor het verdampte hoog-kokende vloeibare medium 140 eveneens de toepassing van zulk een tveede toevoergroef 160 voor typisch gasvormig slot-medium 32.Furthermore, behind this guide behind the drain groove 142 for the evaporated high-boiling liquid medium 140, there is also the use of such a guide groove 160 for typical gaseous lock medium 32.

Figuur 15 toont alternatief voor de combinatie van inrichtingen volgens de Figuur 14, vaarbij daarin de beverkstelliging van een (sub) jra hoge laag van een vloeibare, al dan niet tijdeljjke hechtlaag 144.Figure 15 shows an alternative to the combination of devices according to Figure 14, including the securing of a (sub) year-long layer of a liquid, whether or not temporary, adhesive layer 144.

Daarb^ voor deze eerste inrichting 132 de opname van een stripvormige toevoergroef 160 voor de combinatie van gasvormig medium 32 en een laag percentage van vloeibare verdunning 170, Figuur 13,Furthermore, for this first device 132, the inclusion of a strip-shaped feed groove 160 for the combination of gaseous medium 32 and a low percentage of liquid dilution 170, Figure 13,

Verder daarvjj voor deze tveede inrichting 112 in het boventunnelblok 44 achter de a'fvoergroéf 142 voor het verdampte hoog—kokende vloeibare medium 140 eveneens de toepassing van zulk een toevoergroef 160 voor de combinatie van gasvormig medium 32 en zulk een vloeibare verdunning 170.Furthermore, for this additional device 112 in the upper tunnel block 44 behind the discharge groove 142 for the evaporated high-boiling liquid medium 140, also the use of such a feed groove 160 for the combination of gaseous medium 32 and such a liquid dilution 170.

Figutii 16 tebftk' achtét. de’ tweede Uitwisselbare vérdatöpihgs—inrichting 11Ö eëh. uitwisselbare transducer-* opstelling 112 ten behoeve van het optimalizering van de reeds bewerkstelligde in het algemeen reeds voldoende vlakheid van de met behulp van deze beide verdampings— inrichtingen bewerkstelligde vlakheid van een vaste semiconductor substantie, zoals onder andere een (sub) jm hoge belichtingslaag of een um hoge di—electrische laag.Figutii 16 tebftk 'regards. the ‘second Interchangeable vérdatöpihgs device 11Ö eeh. exchangeable transducer arrangement 112 for the purpose of optimizing the already achieved, generally sufficiently flatness of the flatness of a solid semiconductor substance effected with the aid of these two evaporation devices, such as, inter alia, a (sub) µm high exposure layer or a um high dielectric layer.

Zulke opvolgende phasen zijn zeer sterk vergroot aangegeven in de Figuren 16A, B. C, D, E en F en waarbij in de Figuur 16^ nog de deeltjes van een vaste substantie, in de Figuur 16E met behulp van'de electrische verwarming 126 de bewerkstelliging van de vloeibare laag 148 ervan, en in de Figuur 16F na afkoeling de vaste laag 150 ervan.Such successive phases are shown in a highly enlarged way in Figs. 16A, B.C, D, E and F and in which the particles of a solid substance are still shown in Fig. 16E, the electric heating 126 in Fig. 16E effecting its liquid layer 148, and its solid layer 150 after cooling in Figure 16F.

Daarbij toont de Figuur 16& zeer sterk vergroot zulk een opgebrachte di-elêctrische laag 150, welke met behulp van de trillende transducer 112 tevens verankerd is op de kunststof folie 174, zoals eveneens zeer sterk vergroot is aangegeven in de Figuur 16®.Figure 16 shows very greatly enlarged such an applied dielectric layer 150, which is also anchored on the plastic foil 174 with the aid of the vibrating transducer 112, as is also shown very greatly enlarged in Figure 16®.

Verder toont de Figuur 161 zeer sterk vergroot de vloeibare hecht-substantie 130 onder deze verwarmings-inrichting 126.;Furthermore, Fig. 161 shows the liquid adhesive substance 130 very greatly enlarged underneath this heating device 126.

Zulk een bewerkstelligde vloeibare laag 148 is eveneens met behulp van deze trillende transducer 112 verankerd op de kunststof folie 174, zoals zeer sterk vergroot is aangegeven in de Figuur 16 J.Such an effected liquid layer 148 is also anchored on the plastic film 174 with the aid of this vibrating transducer 112, as is shown to a very large extent in Figure 16 J.

Figuur 17 toont de semiconductor tunnel-opstelling 10 volgens de Figuur 16, met sterk vergroot de Figuren I7A, B, C en D rolgens de Figuur 16, met daarin echter de bewerkstelliging van een ultra vlakke (sub) pm hoge, al dan niet ttjdel|jke vloeibare hecht—substantie 144 op de semiconductor draag/transfer—band 58, zoals zeer sterk vergroot is aangegeven in de Figuur 17®.Figure 17 shows the semiconductor tunnel arrangement 10 according to Figure 16, with figures I7A, B, C and D greatly enlarged in accordance with Figure 16, but with the realization of an ultra-flat (sub) pm high, whether or not ttjdel The liquid adhesive substance 144 on the semiconductor carrier / transfer belt 58, as shown to be greatly enlarged in Figure 17®.

Figuur 18 toont een alternatief voor de tunnel-opstelling volgens de Figuur '16, waarbij een tweede verwarmings-inrichting 110 en de erachter opgenomen inrichting 112, bevattende een transducer-opstelling en waaronder het onderhouden van een μιη hoge bovenspleet boven de zich eronderlangs verplaatsende opvolgende substraat-gedeeltes 56 ten behoeve van de bewerkstelliging van de ultra vlakke di-electrische laag 150 onder een optimale verankering ervan op zulk een kunststof-folie 174.Fig. 18 shows an alternative to the tunnel arrangement of Fig. 16, wherein a second heating device 110 and the device 112 located behind it, including a transducer arrangement and including maintaining a high top slit above the successive one moving below it substrate portions 56 for effecting the ultra-flat dielectric layer 150 under an optimum anchoring thereof on such a plastic film 174.

Figuur 19 toont een alternatieve tunnel-opstelling IQ. waarin de toepassing van een tweetal opvolgende verdampings-inrichtingen 110 en een daarop-volgende transducer-opstelling 112 ten behoeve van het bewerkstelligen van zulk een (sub) um hoge laag van een levens binnen het kader van de uitvinding voor zulk een gedeelte ervan in alternatieve uitvoeringen ervan de toepassing van een laag—kokend vloeibaar draagmedium in plaats van dit gas vormige draagmedium en waarbij in het begin-gedeelte achter zulk een stripvormige medium- v.Figure 19 shows an alternative tunnel arrangement IQ. wherein the use of a pair of successive evaporator devices 110 and a subsequent transducer arrangement 112 for effecting such a (sub) um high layer of a lifetime within the scope of the invention for such a portion thereof in alternative embodiments thereof use a low-boiling liquid carrier medium instead of this gaseous carrier medium and wherein in the initial part behind such a strip-shaped medium.

toevoerinrichting onder de in het boventunnelblok opgenomen stripvormige verwarmings—inrichting het onmiddellijk plaatsvinden van verdamping van uitsluitend dit zeer laag-kokende vloeibare draagmedium.feeding device under the strip-shaped heating device included in the upper tunnel block, the immediate occurrence of evaporation of only this very low-boiling liquid carrier medium.

Zulk een tunnel-opstelling is onder andere reeds omschreven in de reeds goedgekeurde Nederlandse Octrooiaanvrage No. 1037193 van de aanvrager.Such a tunnel arrangement is already described, inter alia, in the already approved Dutch Patent Application No. 1037193 of the applicant.

Daarbij aanvullend mogelijk de toepassing van de aanvullende toevoer van laag—kokend en hoog—kokend vloeibaar draagmedium, onder de toepassing van een drietal opvolgende stripvormige verdampings-inrichtingen.In addition, it is possible to use the additional supply of low-boiling and high-boiling liquid carrier medium, with the use of three successive strip-shaped evaporators.

Verder, indien benodigd, de aanvullende toepassing van zeer laag-kokend vloeibaar draagmedium onder de gebruikmaking van een viertal opvolgende verdampings-inrichtingen, zoals ten behoeve van de bewerkstelliging van een (sub) flm hoge, typisch tijdelfl'ke hechtlaag onder een ultra-vlakheid ervan.Furthermore, if required, the additional use of very low-boiling liquid carrier medium using four successive evaporators, such as for the purpose of effecting a (sub) film high, typically temporary adhesive layer under an ultraflatness. of it.

Zulks mede door dè toepassing daarbij van tenminste één stripvormig tril—element, welke is opgenomen in het boventunnelblok en tevens fungeert als een verdampings— inrichting en typisch is opgenomen in tenminste de laatste verdampings-inrichting.This is partly due to the use thereby of at least one strip-shaped vibrating element, which is included in the upper tunnel block and also functions as an evaporating device and is typically included in at least the last evaporating device.

Binnen het kader Van de uitvinding.tevens tenminste mede in het begin—gedeelte van deze tunnel—opstelling met behulp - van zulk een combinatie van verdampings—inrichtingen de bewerkstelliging van een ultra gelijkmatige (sub) pm hoge film vloeibaar geleidings-medium boven het ondertunnelblok onder de.ononderbroken erbovenlangs verplaatsende semiconductor draag/transfer—band of· - folie.Within the scope of the invention and at least also in the initial part of this tunnel arrangement by means of such a combination of evaporation devices the realization of an ultra-uniform (sub) pm high-film liquid conducting medium above the sub-tunnel block under the continuous semiconductor carrier / transfer band or · film moving along it.

De tunnel-opstelling is verder zodanig uitgevoerd, dat daarbij tenminste plaatselijk in een stripvormig bovenspleet-gedeelte boven de opvolgende, eronderlangs verplaatsende substraat-gedeeltes het continue onderhouden van een hoge onderdruk, mogelijk zelfs nabij een vacuum-conditie, zoals in eerdere, reeds j.l. goedgekeurde Nederlandse Octrooiaanvragen van de aanvrager is aangegeven en vermeld.The tunnel arrangement is furthermore designed such that at least locally in a strip-shaped upper slit portion above the subsequent substrate portions moving underneath it, the continuous maintenance of a high underpressure, possibly even close to a vacuum condition, as in earlier, already j. Approved Dutch patent applications of the applicant are indicated and stated.

Verder, dat daarbij al dan niet gelijktijdig het onderhouden van een kortstondige stilstand van deze opvolgende semiconductor substraat-gedeeltes.Furthermore, that in doing so, whether or not simultaneously maintaining a short-term standstill of these successive semiconductor substrate portions.

Verder is deze tunnel-opstelling in een alternatieve uitvoering ervan zodanig uitgevoerd, dat daarbij tenminste plaatselijk eveneens een stripvormige medium-toevoer-inrichting is opgenomen in het ondertunnelblok ervan.Furthermore, in an alternative embodiment thereof, this tunnel arrangement is designed in such a way that a strip-shaped medium supply device is also included in its sub-tunnel block at least locally.

Daarbij is het stripvormige medium toevoer-gedeelte, bevattende zulke naast elkaar gelegen medium-toevoergroe-ven, opgenomen in het boven-gedeelte van het ondertunnelblok.In addition, the strip-shaped medium supply portion, containing such adjacent medium supply slots, is included in the upper portion of the sub-tunnel block.

Verder, dat daarbij door het beperkt houden van de afmetingen van deze medium—toevoergroeven deze medium-toevoergroeven in zulk een stripvormig medium-toevoerblok, de afmeting in hoogterichting van zulk een boven- of ondertunnelblok in hoogterichting ervan eveneens zeer beperkt tot typisch minder dan 50 mm.Furthermore, by keeping the dimensions of these medium supply grooves limited, these medium supply grooves in such a strip-shaped medium supply block, the height dimension of such an upper or lower tunnel block in its height direction is also very limited to typically less than 50 mm.

Claims

1. Semiconductor substrate transfer / treatment tunnel arrangement for the purpose of at least co-occurrence of successive semiconductor treatments of successive semiconductor substrate sections moving through it, characterized in that it is further designed in such a way that it comprises several strip-shaped elements therein medium supply devices are included in at least partly its upper tunnel block for the purpose of continuous operation during its operation of the combination of a base carrier medium, particles of at least one vaporizable liquid carrier medium and particles of a semiconductor substance.

2. A semiconductor tunnel arrangement as claimed in Claim 1, characterized in that it is further designed and comprises such means that, at least locally therein, an uninterrupted supply of this combination of support media for particles of a semiconductor substance in a solid form thereof, such as, among other things, a dielectric, metal, plastic, or paper substance.

3. A semiconductor tunnel arrangement as claimed in Claim 1, characterized in that it is further embodied and comprises such means that, at least locally therein, an uninterrupted supply of water occurs during such operation via such a strip-shaped medium supply device. this combination of carrier media for particles of a semiconductor substance in a liquid form thereof.

4. A semiconductor tunnel arrangement as claimed in Claim 3, characterized in that it is further designed and comprises means such that such a liquid substance is thereby a removable adhesive substance.

5. A semiconductor tunnel arrangement as claimed in Claim 3, characterized in that it is further designed and comprises means such that such a liquid substance is thereby a definitive adhesive substance.

6. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising such means that this medium supply device comprises at least one mixing device for the purpose of mixing a high percentage of gaseous carrier medium with at least the combination of vaporizable liquid carrier medium and particles of a semiconductor substance in a solid or liquid form thereof.

7. A semiconductor tunnel arrangement as claimed in Claim 6, characterized in that it is further designed such that it comprises means such that a mixing device is included above this mixing device for this purpose in the medium supply device thereof. mixing a high percentage of vaporizable low boiling liquid carrier medium with a very high boiling liquid, temporary or non-temporary adhesive.

8. A semiconductor tunnel arrangement as claimed in Claim 6, characterized in that it is further designed and comprises such means that a mixing device for mixing is included above this mixing device above this mixing device. of a high percentage of vaporizable low-boiling liquid carrier medium with the combination of high-boiling liquid carrier medium and particles of a solid semiconductor substance.

9. A semiconductor tunnel arrangement as claimed in Claim 8, characterized in that it is further designed and comprises such means that in this medium feed device above this mixing device for evaporable low-boiling liquid carrier medium with the combination of high-boiling liquid carrier medium and particles of a solid semiconductor substance another mixing device is included for mixing a high percentage of high-boiling liquid carrier medium and particles of a solid semiconductor substance.

10. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further designed and comprises such means that an optimum uniform mixing of the semiconductor media supplied therein takes place in such a mixing device.

11. A semiconductor tunnel arrangement as claimed in Claim 10, characterized in that it is further designed and comprises means such that the use of a rotating camshaft arrangement is used in at least the lower mixing device.

12. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such that in this device on the underside of this lower mixing device a large number of, in the transverse direction of this tunnel arrangement, side by side Medium discharge channels are included, which connect this mixing device to the upper slit portion of this tunnel arrangement below.

13. A semiconductor tunnel arrangement as claimed in Claim 12, characterized in that it is further designed and comprises such means that, behind this medium-feeding device, which is partially included in the upper tunnel block thereof, the accommodation of a strip-shaped discharge groove for the uninterrupted discharge of at least the major part of this gaseous carrier medium.

14. A semiconductor tunnel arrangement as claimed in Claim 13, characterized in that it is further designed and comprises means such that, in this upper tunnel block behind this drain groove for the gaseous medium, the accommodation of a strip-shaped device for at least the layer boiling liquid carrier medium, with a strip-shaped discharge section in this block behind this device for the uninterrupted discharge of the vapor formed while effecting a sufficiently uniform precipitation of the high-boiling liquid carrier medium and particles of this semiconductor substance, as is also described and indicated in the Patent Application filed simultaneously.

15. A semiconductor tunnel arrangement as claimed in Claim 14, characterized in that it is further designed and comprises such means that the use of a strip-shaped electric heating element in this device is used for this purpose.

16. A semiconductor tunnel arrangement as claimed in Claim 14, characterized in that it is further embodied and comprises such means that, in this upper tunnel block behind this device, the accommodation of a strip-shaped vibration / heating device for the purpose of at least co evaporation of the high-boiling liquid carrier medium while effecting a sufficiently uniform precipitation of a semiconductor substance, as is also described in this accompanying Patent Application, followed by the inclusion of a strip-shaped discharge device, which is also incorporated in this upper tunnel block, for the uninterrupted discharge of this vaporised medium.

17. A semiconductor tunnel arrangement as claimed in Claim 16, characterized in that it is further embodied and comprises such means that thereby effecting a layer of particles of a liquid, at least temporary adhesive substance.

18. A semiconductor tunnel arrangement as claimed in Claim 16, characterized in that it is further designed and comprising such means that thereby effecting an already sufficiently sufficiently continuous contiguous layer of typically nanometer-sized particles of a semiconductor substance in a fixed form thereof.

19. A semiconductor tunnel arrangement as claimed in Claim 18, characterized in that it is further designed and comprises means such that the inclusion of a strip-shaped electric heating device for the purpose of a heating device behind said evaporation device melting these particles to form a liquid layer of this semiconductor substance.

20. A semiconductor tunnel arrangement as claimed in Claim 19, characterized in that it is further designed and comprises means such that, as behind this heating device, the absorption of a cooling part of this block is achieved by cooling this layer. the realization of a ^ m high solid layer of this semiconductor substance.

21. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further designed and comprises such means that, during such a vibrating process with the aid of such a vibrator in the upper tunnel block, rapid downward displacement and the subsequent slow upward displacement of this device the occurrence of particles of this semiconductor substance also taking place in the semiconductor top layer of a subsequent tunnel section of the successive, through-moving substrate sections as a semiconductor penetration. process, and involving melting after this. and the subsequent cooling process anchoring of this applied layer to this previously applied layer takes place.

22. A semiconductor tunnel arrangement as claimed in Claim 21, characterized in that it is further embodied and comprises such means that, for such a vibration condition, the use of the electric vibration generating device described in the Dutch Patent application no. 1037o66 of the applicant.

23. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied and comprises such means that uninterrupted mixing takes place in this medium supply device in a strip-shaped mixer thereof of the combination of fed very high-boiling liquid carrier medium and particles of a semiconductor substance, in an underlying mixing device the mixing of this combination with high-boiling liquid carrier medium, in an underlying mixing device the mixing of this combination with low-boiling liquid carrier medium and in the mixing device below it the mixing of this combination with the gaseous carrier medium.

24. A semiconductor tunnel arrangement as claimed in Claim 23, characterized in that it is further designed and comprises such means that successive evaporations take place in three, at least evaporating devices, which are incorporated in the upper tunnel block typically sufficiently uniform deposition of such combinations on the subsequent semiconductor substrate portions moving therebelow and finally on the particles of such a semiconductor substance in typically a solid form thereof.

25. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising such means that, after the supply of such a combination of media from this medium-supply device, in the upper slit section below of the tunnel passage the substantially lighter gaseous carrier medium prevents precipitation of particles of the semiconductor substance in a solid or liquid form thereof against the subsequent bottom wall section of the upper tunnel block.

26. A semiconductor tunnel arrangement as claimed in Claim 25, characterized in that it is further embodied and comprises such means that the accommodation of a strip-shaped supply device for gaseous lock medium is herein incorporated in the upper tunnel block behind the strip-shaped medium discharge section. for the purpose of promoting the discharge of the separated gaseous medium via this preceding strip-shaped discharge system in the upper tunnel block while also forming a strip-shaped gas lock in this upper slit portion.

27. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising such means that in a central strip-shaped semiconductor treatment portion of the upper gap above the subsequent continuous continuous semiconductor substrate portions after continuously introducing the combination of at least co-evaporable low-boiling liquid carrier medium and particles of a semiconductor substance in a liquid or solid form thereof into the entrance section by the gradual evaporation thereof under a stripping evaporator in the upper tunnel block the gradual realization of a typical micrometer high layer under a mostly sufficient flatness of the applied combination of a higher-boiling liquid carrier medium and these particles.

28. A semiconductor tunnel arrangement as claimed in Claim 27, characterized in that it is further designed and comprising such means that the application of the semiconductor devices and means described and indicated in the applications submitted simultaneously by the applicant Dutch Patent Application No. 2, with the conductive build-up of such a sufficiently flat semiconductor layer during evaporation in a portion thereof by evaporation of the liquid carrier medium with the aid of an evaporator located above it. which is included in the upper tunnel block.

29. A semiconductor tunnel arrangement as claimed in Claim 28, characterized in that it is further designed and comprising means such that a semiconductor layer to be produced consists of particles of such a semiconductor substance and a higher-boiling liquid carrier medium.

30. A semiconductor tunnel arrangement as claimed in Claim 29, characterized in that it is further embodied and comprises means such that, in a subsequent strip-shaped part thereof, the processing of a mostly in a sufficiently flat layer of particles of a solid or liquid semiconductor substance.

31. A semiconductor tunnel arrangement as claimed in Claim 29, characterized in that it is further embodied and comprises such means that, in a subsequent strip-shaped part thereof, the realization of a usually in a sufficiently flat layer of particles of an even higher-boiling liquid carrier medium and particles of a liquid, temporary or non-temporary adhesive substance.

32. A semiconductor tunnel arrangement as claimed in Claim 31, characterized in that it is further embodied and comprises means such that, in a subsequent strip-shaped part thereof, the realization of a mixture in a subsequent high-boiling liquid carrier medium. often a sufficiently flat layer of particles of such a liquid, temporary or non-temporary adhesive substance.

33. A semiconductor tunnel arrangement as claimed in Claim 31 or 32, characterized in that it is furthermore designed and comprising such means that, during such an evaporation process of the last evaporable carrier medium, a penetration process of these particles of a solid or liquid substance takes place in the semiconductor layer produced in a previous tunnel section.

34. A semiconductor tunnel arrangement as claimed in Claim 33, characterized in that it is furthermore designed and comprising such means that, when such a liquid adhesive substance is used, such a layer already applied is a solid semiconductor layer.

35. A semiconductor tunnel arrangement as claimed in Claim 33, characterized in that it is further designed and comprising means such that, when using particles of a solid semiconductor substance, such a semiconductor top layer applied in a preceding tunnel portion , whether or not containing temporary liquid adhesive substance.

36. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further designed and comprising such means that if the top wall of the continuous semiconductor substrate sections moving along it underneath. such a strip-shaped medium supply device is permissible to a small extent, thereby by the uniform supply of the combination of particles of a semiconductor substance to be applied in a liquid or solid form thereof and at least one vaporizable liquid carrier medium, in the subsequent medium subsequent tunnel sections through the effected subsequent build-up of typically a plurality of semiconductor layers of liquid carrier medium and this semiconductor substance and finally a layer of these particles, such a limited unevenness is sufficiently eliminated.

37. A semiconductor tunnel arrangement as claimed in Claim 36, characterized in that it is further designed in such a way that it comprises means such that the use of gaseous support medium is used for this basic support medium.

38. A semiconductor tunnel arrangement as claimed in Claim 36, characterized in that it is further designed and comprises such means that such a base carrier medium is a very low-boiling liquid carrier medium for this purpose and wherein behind this medium supply device the upper tunnel block the accommodation of a strip-shaped evaporator for the purpose of evaporation.

39. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further designed such that, in the upper tunnel block, the accommodation of a typical exchangeable strip-shaped electric heating device, with a metal heating part thereof and which extends transversely across the central semiconductor treatment portion of this tunnel arrangement.

A semiconductor tunnel arrangement as claimed in Claim 39, characterized in that it is further embodied such that the use of a typically less than 0.1 mm wide heating element, which is incorporated in its lower wall in a typical less than 5 mm wide dielectric insulation block, which is incorporated in an exchangeable metal support block.

A semiconductor tunnel arrangement as claimed in Claim 40, characterized in that it is further designed such that the height of the upper slit above the layer of particles of a solid semiconductor substance applied in a preceding tunnel section and the lower wall of this heating strip is less than 1 mm and typically only 0.2 mm.

42. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further designed and comprising such means that, such as the required heating of such a um high semiconductor layer, with a volume of such particles of a heat to be heated. solid semiconductor substance from about 5 mm 3, to typically less than 120 () centigrade occurs in typically less than 0.05 second, only a very limited electrical power of typically less than 5 watts is required, with virtually no heating of the successive semiconductor substrate portions located beneath this layer to be heated, with thereby no unacceptable distortion thereof.

A semiconductor tunnel arrangement as claimed in Claim 12, characterized in that it is further designed such that this medium supply device comprises a medium supply compartment, which is located at some distance above its upper tunnel block and of which typically on the top side the connection of this medium supply part and against the underside thereof a strip-shaped medium discharge part, which is mounted on this upper tunnel block and which comprises a large number of relationships extending in a typically vertical direction and lying side by side in the transverse direction narrow medium supply channels which open into an underlying micrometer-high upper slit section above these successive semiconductor substrate sections moving therebetween.

A semiconductor tunnel arrangement as claimed in Claim 43, characterized in that it is further embodied such that these grooves are also received in the upright side wall of one of these two medium supply block sections, the upright side walls of this block section be optimally parallel with each other, with a deviation of only one micrometer and also for the other block part, and the recess in such a tunnel block for such a medium supply block has dimensions such that this block is at least long-term therein under a press fit anchored.

45. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprises means such that the uninterrupted location of the supply of the combination of liquid carrier medium and particles takes place via this medium feed device. of a liquid semiconductor substance, such as, inter alia, cleaning, etching, stripping or rinsing medium, for the purpose of a semiconductor treatment thereby taking place in the strip-shaped upper slit section below.

A semiconductor tunnel arrangement as claimed in Claim 44 or 45, characterized in that it further comprises means such that, at least locally in this fluid supply device, maintaining an overpressure of at least this supplied combination of successive carrier media and particles of a semiconductor substance relative to the pressure of the medium in this upper slit section below.

47. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is furthermore designed and comprising such means that the excess particles of a semiconductor substance end up against the underside of the upper tunnel block during the evaporation process. process of the subsequent liquid carrier media is avoided.

A semiconductor tunnel arrangement according to Claim 47, characterized in that such a substance is thereby a solid substance.

A semiconductor tunnel arrangement according to Claim 47, characterized in that, in such a substance, such a substance is a liquid, typically adhesive substance. 5U Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising means such that, in a subsequent strip-shaped section of the upper tunnel block, the accommodation of a strip-shaped transducer arrangement with the accommodation above of a low-frequency pulsing device for co-maintaining a low-frequency pulsing condition thereof for the continuous occurrence of a semiconductor treatment process in the strip-shaped semiconductor treatment section below, such as, among other things, a cleaning, etching , stripping or sploeling process of the subsequent semiconductor substrate portions moving continuously underneath.

51. A semiconductor tunnel arrangement as claimed in Claim 50, characterized in that it is furthermore designed and comprising means for thereby achieving an optimum condition of such a semiconductor treatment process at the location of, viewed in the direction of movement of these successive sub-moving semiconductor substrate portions, the front portion thereof, with the following taking place uninterruptedly: 1. in the highest pulsing position of this vibrating transducer, the achievement of a maximum height of the upper slit below it; 2. in the middle pulsing position of this vibrating transducer, a middle position thereof; and 3. in the lower pulsing position of this vibrating transducer, the realization of a micrometer height of the upper slit section located below it, and wherein an optimum semiconductor treatment process of the top layer of the continuous semiconductor moving along it takes place therein substrate portions.

52. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further embodied such and comprising means such that in. a strip-shaped section of the upper tunnel block behind the strip-shaped medium feed device for the semiconductor base carrier medium contained therein and particles of a semiconductor substance in its solid state containing a continuously rotating camshaft arrangement contained in an exchangeable strip-shaped compartment filled with liquid medium a strip-shaped printing plate section with a thin-walled electric heating element incorporated therein for the purpose of causing evaporation of the supplied liquid carrier medium and subsequently taking place of an oven treatment of the applied layer of a dielectric substance.

53. A semiconductor tunnel arrangement as claimed in Claim 41, characterized in that it further comprises means for the purpose of maintaining, with the aid of this camshaft arrangement as a low-frequency pulsing device, a low-frequency pulsing condition of this printing plate section, thereby taking place a semiconductor treatment process of the successive, continuously moving semiconductor substrate sections along it.

A semiconductor tunnel arrangement as claimed in Claim 53, characterized in that it further comprises means for thereby taking place the construction of a micrometer-high layer of a dielectric substance on the relatively already built up in previous tunnel sections. high layer of it.

55. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further designed and comprising such means that the use of a continuous rotating camshaft arrangement in the middle part of a strip-shaped filled with liquid medium is thereby achieved. upper compartment of the upper tunnel block and beneath it in the lower tunnel block a strip-shaped compartment also filled with liquid medium, the upper part of which is a strip-shaped, vertically displaceable pressure wall for the purpose of supplying and discharging this liquid medium to and from from this compartment maintaining a subsequent upward and downward displacement thereof and therewith of the continuous semiconductor substrate portions moving along it.

A semiconductor tunnel arrangement as claimed in Claim 55, characterized in that it further comprises means for maintaining such a successive up and down movement of the underpressure wall and thus of the continuous semiconductor substrate portions moving along it above typically a mechanical contact with this underpressure wall for thereby maintaining a semiconductor treatment process of these successive substrate portions under the combination of a typical high or low frequency vibrating strip-shaped pressure wall portion of the upper tunnel block and a low frequency pulsed strip-shaped upper wall portion of the sub-tunnel block. 5.7. Semiconductor tunnel arrangement according to Claim 56, characterized in that it is further designed and comprises means such that the use of a certain profiling of the cams of this camshaft arrangement is incorporated therein.

58. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is furthermore embodied in such a way and comprising such means that at least locally in a strip-shaped upper slit portion above said successive semiconductor substrate portions moving alongside it a high underpressure, possibly even near a vacuum condition.

59. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further designed and comprises such means that a temporary standstill of the subsequent semiconductor substrate sections for the purpose of an exposure process taking place therein of the exposure layer applied in a previous tunnel section, which is described and indicated in several of the already approved Dutch Patent Applications submitted by the applicant.

60. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further designed and comprising means such that medium-lock arrangements are included in the upper tunnel block on either side of such a central strip-shaped semiconductor treatment section. of preventing the combination of the base carrier medium and particles of a semiconductor substance ending up therein from escaping transversely from the central semiconductor treatment section via the two strip-shaped slit sections between the subsequent tape or film sections and the part of the bottom wall of the upper tunnel block located above it.

61. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising means such that, as locally, the use of such a mini medium supply block in the sub-tunnel block, with the occurrence of a continuous supply of exclusively liquid medium in a thin-liquid state thereof for the purpose of maintaining an optimum uniform micrometer height of the applied layer between the sub-tunnel block section and the subsequent one in a subsequent part of this tunnel arrangement, substrate portions moving thereabove, thereby functioning the continuous metal band or film as a temporary semiconductor substrate thereof.

62. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprises such means that at least locally therein after such a medium supply device in the upper tunnel block by means of at least partly an overpressure of the medium supplied relative to the pressure, typically an underpressure, of the medium under these successive band portions maintaining mechanical contact of these successive band portions with the upper wall of the sub-tunnel block for the strip-shaped semiconductor treatment located above it section contributing at least to an optimally uniform layer structure of the particles of a semiconductor substance deposited therein.

63. A semiconductor tunnel arrangement as claimed in Claim 62, characterized in that it is further designed and comprising means such that maintaining a micrometer height of the upper slit section behind this medium feed device and a considerably higher height of the upper slit section for this device, whereby a substantial discharge of the medium fed through the medium feed grooves in the direction of movement of these successive semiconductor substrate portions and a negligible discharge in the opposite direction via the upper slit section behind it to a strip-shaped medium discharge section included in this upper tunnel block.

64. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further implemented in such a way that it includes the possible application of several of the means and methods of a semiconductor facility, installation - tunnel configurations and installations, which took place on 23 June, 6 July and 11 August and currently Dutch Patent Applications filed by the applicant regarding such a semiconductor tunnel arrangement.

65. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprises such means that therein the possible application of all semiconductor treatments that are already generally used for wafers in semiconductor modules or installations, also those already described in Patents, if therein the mention in the text and Claims of the following: a) an individual semiconductor wafer or substrate; or b) an individual or non-individual semiconductor processing module or installation.

66. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further designed and comprises means such that the means and methods described in this Patent Application are also applicable to these other semiconductor tunnel arrangements, which are indicated and described in these other preceding and simultaneously filed Patent applications of the applicant.

67. A method of a semiconductor substrate transfer / treatment tunnel arrangement, wherein during its operation the at least co-occurrence of successive semiconductor treatments of the successive semiconductor substrate parts moving through it, characterized in that therein, with the aid of a plurality of strip-shaped medium feed. devices which are at least contained in the upper tunnel block, the continuous supply of the combination of a base carrier medium, particles of at least one vaporizable liquid carrier medium and particles of a semiconductor substance take place.

A method according to Claim 67, characterized in that, at least locally therein, a continuous supply of this combination of carrier mediums for particles of a semiconductor substance in a solid form takes place therein via such a strip-shaped medium supply device during its operation. thereof, such as, among other things, a dielectric metal plastic or paper substance.

A method according to Claim 67, characterized in that, at least locally therein, a continuous supply of this combination of carrier mediums for particles of a semiconductor substance in a liquid form takes place therein via such a strip-shaped medium supply device. of it.

A method according to Claim 69, characterized in that such a liquid substance is a removable adhesive substance.

A method according to Claim 69, characterized in that such a liquid substance is thereby a definitive adhesive substance.

72. A method according to any one of the preceding claims, characterized in that, as this medium supply device comprises at least one mixing device, therein there is continuous mixing of a high percentage of gaseous carrier medium with at least the combination of vaporizable liquid carrier medium and particles of a semiconductor substance in a solid or liquid form thereof.

73. A method according to claim 72, characterized in that, as is included in this medium supply device above this mixing device, a mixing device is included therein, mixing a high percentage of evaporable low-boiling liquid carrier medium with a very high boiling liquid, temporary or non-temporary adhesive. takes place.

A method according to Claim 72, characterized in that, as in this medium feeding device is included above this mixing device, a mixing device is included, mixing therein a high percentage of evaporable low-boiling liquid carrier medium with the combination of high-boiling liquid carrier medium and particles of a solid semiconductor substance.

A method according to Claim 74, characterized in that, as there is in this medium feed device above this mixing device for vaporizable low-boiling liquid carrier medium with the combination of high-boiling liquid carrier medium and particles of a solid semiconductor substance still a mixing device is included, in which the mixing of a high percentage of high-boiling liquid carrier medium and particles of a solid semiconductor substance takes place.

76. A method according to any one of the preceding claims, characterized in that in such a mixing device an optimally uniform mixing of the semiconductor media supplied therein takes place.

Method according to Claim 76, characterized in that such mixing takes place in at least the lower mixing device with the aid of a rotating camshaft arrangement.

78. A method as claimed in any one of the preceding Claims, characterized in that, as is the case here in this device, a large number of medium discharge channels, which are adjacent to each other in the transverse direction of this tunnel arrangement, are accommodated on the underside of this lower connecting the mixing device to the upper slit portion of this tunnel arrangement below, in which such a continuous supply of a semiconductor substance to this upper slit portion takes place.

A method according to Claim 78, characterized in that, as is the case behind this medium supply device, which is partially accommodated in the upper tunnel block, there is also the accommodation of a strip-shaped drain groove, thereby the continuous discharge of at least the major part of typical gaseous carrier medium. finds.

A method according to Claim 79, characterized in that, as is the case in this upper tunnel block behind this discharge groove for this gaseous carrier medium, the accommodation of a strip-shaped device for at least the low-boiling liquid carrier medium, with in this block behind this device strip-shaped discharge section, therein an uninterrupted discharge of the vapor formed while effecting a sufficiently uniform precipitation of the high-boiling liquid carrier medium and particles of this semiconductor substance in a solid or liquid form thereof, as is also described and indicated in the Patent Application filed simultaneously.

81. A method according to Claim 80, characterized in that, as therein, the use of a strip-shaped, typical electric heating element in this device, and thus the continuous occurrence of evaporation of this liquid carrier medium.

82. A method as claimed in Claim 80, characterized in that, as is the case in this upper tunnel block behind this device, the accommodation of a strip-shaped vibration / heating device for at least co-evaporating the high-boiling liquid carrier medium while effecting a sufficiently uniform precipitation of a semiconductor substance, as is also described in this appended Patent Application, followed by the inclusion of a strip-shaped discharge device, which is also included in this upper tunnel block, the continuous discharge of this realized vapor therein -shaped medium.

Method according to Claim 82, characterized in that the effect of achieving a layer of particles of a liquid, at least temporary bonding substance, which is already typically sufficiently flat and continuous, is thereby achieved.

A method according to Claim 82, characterized in that thereby effecting an already sufficiently sufficiently continuous contiguous layer of typically nanometer-sized particles of a semiconductor substance in a solid form thereof.

A method according to Claim 84, characterized in that, as in the case of a heating device behind this evaporation device, the inclusion of a strip-shaped electric heating device, the melting of these particles therein to form a liquid layer of this semiconductor substance.

A method according to Claim 85, characterized in that, as behind this heating device, the inclusion of a cooling part of this block, by cooling of this layer, the realization of a high solid layer of this semiconductor substance.

A method as claimed in any one of the preceding Claims, characterized in that, as during such a vibrating process with the aid of such a vibrating device in the upper tunnel block due to the typically rapid downward displacement and the subsequent slow upward displacement of this device also the occurrence of particles of this semiconductor substance occurring in the semiconductor top layer of a subsequent tunnel section of the successive, moving-through substrate sections as a semiconductor penetration process, and wherein after this melting and the subsequent one cooling process anchoring of this applied layer to this previously applied layer takes place.

88. A method according to claim 87, characterized in that, like the use of the electric vibration-generating device, it is described in Dutch patent application no. 1037066 of the applicant.

89. A method according to any one of the preceding claims, characterized in that, as in this medium supply device in a strip-shaped mixer thereof, continuous mixing takes place of the combination of supplied very high-boiling liquid carrier medium and particles of a semiconductor substance, in an underlying mixing device the mixing of this combination with high-boiling liquid carrier medium, in an underlying mixing device the mixing of this combination with low-boiling liquid carrier medium and in the underlying mixing device the mixing of this combination with the gaseous carrier medium.

Method according to Claim 89, characterized in that successive evaporations take place in three, at least evaporating devices included in, the upper tunnel block, each time with a typically sufficient precipitation of such combinations on the subsequent semiconductor substrate moving alongside it portions and finally of the particles of such a semiconductor substance in typically a solid form thereof.

91. A method according to any one of the preceding claims, characterized in that, after the supply of such a combination of media from this media supply device in the upper slit portion of the tunnel passage below, the considerably lighter gaseous carrier medium is prevented, that precipitation of particles of the semiconductor substance in its solid or liquid form upwards against the subsequent bottom wall section of the upper tunnel block.

A method according to Claim 91, characterized in that, as in the upper tunnel block behind the strip-shaped medium discharge section, the accommodation of a strip-shaped feed device for gaseous lock medium for thereby promoting the discharge of the separated gaseous medium carrier medium via this preceding strip-shaped discharge system in the upper tunnel block, also the favorable formation of a strip-shaped gas lock takes place in this upper slit section.

A method according to any one of the preceding Claims, characterized in that, as before, in a central strip-shaped semiconductor treatment portion of the upper slit above the subsequent semiconductor substrate portions moving continuously underneath it after the continuous introduction of the substrate into its input section combination of at least co-vaporizable low-boiling liquid carrier medium and particles of a semiconductor substance in a liquid or solid form thereof, by the gradual evaporation thereof under a strip-shaped evaporator in the upper tunnel block, the gradual realization of a typical micrometer high layer under a often sufficient flatness of the applied combination of a higher-boiling liquid carrier medium and these particles.

A method according to Claim 93, characterized in that, as is also the purpose thereof, the use of the semiconductor devices and means, which are described and indicated in Dutch Patent Application no. 2, thus the gradual build-up of such a sufficiently flat semiconductor layer during evaporation in a tunnel section by evaporation of the liquid carrier medium. with the aid of the evaporating device situated above, which is incorporated in the upper tunnel block.

A method according to Claim 94, characterized in that thereby the realization of a semiconductor layer consisting of particles of such a semiconductor substance and a higher-boiling liquid carrier medium.

96. A method according to Claim 95, characterized in that, in a subsequent strip-shaped part thereof, by evaporation of this higher-boiling liquid carrier medium, the realization of a layer of particles of a solid or liquid semiconductor substance that is often sufficiently flat. .

A method according to Claim 95, characterized in that, in a subsequent strip-shaped part thereof, by evaporation of this higher-boiling liquid medium, the realization of a layer of particles of an even higher-boiling liquid carrier medium, which is usually sufficiently thick. and particles of a liquid, temporary or non-temporary adhesive substance.

98. A method according to Claim 97, characterized in that, in a subsequent strip-shaped part thereof, by evaporation of this very high-boiling liquid carrier medium, the realization of a layer of contiguous particles which is generally sufficiently sufficiently flat (su) um. of such a liquid, temporary or non-temporary adhesive.

A method according to Claim 97 or 98, characterized in that, during such an evaporation process of the last evaporable carrier medium, there is also a penetration process of these particles of a solid or liquid substance into the previous tunnel section achieved semiconductor layer.

A method according to Claim 99, characterized in that, when such a liquid adhesive substance is used, such a layer already applied is a solid semiconductor layer.

A method according to Claim 99, characterized in that, as in the case of the use of particles of a solid semiconductor substance, the application of a liquid, temporary or non-temporary liquid adhesive substance as a semiconductor top layer in a previous tunnel section.

102. A method as claimed in any one of the preceding Claims, characterized in that if the top wall of the continuous semiconductor substrate sections moving along it underneath at such a strip-shaped medium feed device is a slightly permissible flat, thereby due to the uniform feed of the combination of particles of a semiconductor substance to be applied in a liquid or solid form thereof and at least one vaporizable liquid carrier medium, in the subsequent tunnel sections by the effected successive build-up of typically several semiconductor layers of liquid carrier medium and this semiconductor substance and finally a layer of these particles, such a limited flatness is sufficiently eliminated.

Method according to Claim 102, characterized in that the use of gaseous support medium is used for this basic support medium.

104. A method according to Claim 102, characterized in that, to that end, such a basic carrier medium is a very low-boiling liquid carrier medium and wherein, with the aid of the strip-shaped evaporator device included in the upper tunnel block behind this medium supply device, evaporation takes place.

105. A method according to any one of the preceding claims, characterized in that, as in the upper tunnel block, the accommodation of a typically exchangeable strip-shaped electric heating device, with a metal heating part thereof and which extends transversely over the central semiconductor treatment part of this tunnel arrangement, thereby fusing particles of a solid semiconductor substance.

106. A method according to Claim 105, characterized in that it is further embodied such that, in addition, the use of a typically less than 0.1 mm wide heating element, which in its lower wall is incorporated in a typically less than 10 mm wide dielectric insulation block, which is incorporated in an exchangeable metal support block, such heating takes place for a very short time.

A method according to Claim 106, characterized in that, as in that case, the height of the top gap above the layer of particles of a solid semiconductor substance applied in a previous tunnel section and the bottom wall of these less than 1 mm and typically only 0 Is 2 mm, an extremely low heat development is required.

108. A method according to any one of the preceding claims, characterized in that, like the required heating of such a um high semiconductor layer, with a heatable volume of such particles of a solid semiconductor substance of approximately 5 mm 3, to typically less than 1200 ° Celcius occurs in typically less than 0.05 second and only a very limited electrical power of typically less than

10 watts is required, while at the same time virtually no heating of the subsequent semiconductor substrate sections located under this layer to be heated takes place, with thereby no inadmissible deformation thereof.

A method according to Claim 78, characterized in that like this medium supply device contains a medium supply compartment which extends at some distance above the upper tunnel block, and wherein the connection of this medium is supplied at its upper side. portion and against the underside thereof a strip-shaped medium discharge portion which is mounted on this upper tunnel block and which comprises a large number of relatively narrow medium supply channels which extend in a typically vertical direction and which are adjacent to one another in a transverse direction and which open into an underlying micrometer high top slit section above these successive semiconductor substrate portions moving along it, a sufficiently uniform supply of particles from a semiconductor substance to this upper slit section below.

110. A method according to any one of the preceding claims, characterized in that the continuous supply of co-liquid fluid medium and particles of a liquid semiconductor substance, such as, among others, cleaning, etching, takes place via this medium supply device. , stripping or rinsing medium, for the purpose of a semiconductor treatment thereby taking place in the strip-shaped upper slit section below.

Method according to Claim 110, characterized in that, at least locally in this medium supply device, maintaining an overpressure of at least this supplied combination of successive carrier mediums and particles of a semiconductor substance relative to the pressure of the medium in this upper slit section below.

A method according to any one of the preceding Claims, characterized in that the excess of particles of a semiconductor substance against the underside of the upper tunnel block during the evaporation process of the subsequent liquid carrier medium is thereby avoided.

The method according to claim 112, characterized in that such a substance is a solid substance.

A method according to Claim 112, characterized in that such a substance is in this case a liquid, typically temporary or non-temporary adhesive substance.

115. A method as claimed in any one of the preceding Claims, characterized in that, as in that case in a strip-shaped section of the upper tunnel block, the inclusion of a strip-shaped transducer arrangement, with the inclusion of a low-frequency pulsating device above it, low-low-frequency pulsing condition and for the continuous occurrence of a semiconductor treatment process in the strip-shaped semiconductor treatment section below, such as, among other things, such a cleaning, etching, stripping or rinsing process of the subsequent, continuously moving semiconductor substrate portions beneath it.

A method according to Claim 115, characterized in that thereby achieving an optimum condition of such a treatment process at the front portion thereof, viewed in the direction of movement of said successive substrate sections moving therebetween, with the uninterrupted occurrence of the following: 1. in the highest pulsing condition of this vibrating transducer, the achievement of a maximum height of the upper slit section below; 2. in the middle pulsing position of this vibrating transducer, a middle position thereof; and 3. in the lower pulsing position of this vibrating transducer, the realization of a micrometer height of the upper slit section located below it, and wherein an optimum semiconductor treatment process of the top layer of the continuous semiconductor moving along it takes place therein substrate portions.

117. A method as claimed in any one of the preceding Claims, characterized in that, as in a strip-shaped section of the upper tunnel block behind the strip-shaped medium feed device incorporated therein, for the semiconductor base carrier medium and particles of a semiconductor substance in a solid state thereof. incorporated in an exchangeable strip-shaped compartment filled with liquid medium, continuously rotating camshaft arrangement, comprising a strip-shaped pressure plate section, with a thin-walled electric heating element included therein, the evaporation of the supplied liquid carrier medium taking place therewith and subsequently taking place of an oven treatment of the applied layer of typically a dielectric substance.

118. A method according to claim 117, characterized in that, with the aid of this camshaft arrangement as a typical low-frequency pulsing device, the maintenance of a low-frequency pulsing condition of this printing plate section also takes place under the same conditions. of a semiconductor treatment process of the successive, continuously moving semiconductor substrate portions beneath it.

119. A method according to claim 118, characterized in that the construction of a micrometer-high layer of a typical dielectric substance on the relatively high layer thereof already built up in the previous tunnel sections takes place.

120. A method as claimed in any one of the preceding Claims, characterized in that like the use of a continuous rotating camshaft arrangement in the middle part of a strip-shaped upper compartment of the upper tunnel block filled with liquid medium and below it in the sub-tunnel block liquid medium filled strip-shaped compartment, the upper part of which is a strip-shaped, height-displaceable pressure wall, with the aid of the subsequent supply and discharge of this liquid medium to and from this compartment, thereby maintaining a subsequent upward and downward movement thereof and thereby of the continuous semiconductor substrate portions moving along it.

121. A method according to Claim 120, characterized in that the maintenance of such a successive up and downward movement of the underpressure wall and hence of the continuous substrate sections moving along it continuously takes place under typical mechanical contact with said underpressure wall. for the purpose of maintaining a semiconductor treatment process of these successive substrate portions with the combination of a typical high or low frequency vibrating strip-shaped pressure wall portion of the upper tunnel block and a low-frequency pulsating strip-shaped upper wall portion of the sub-tunnel block .

122. A method according to claim 121, characterized in that, by applying a certain profiling of the cams included therein of this camshaft arrangement, maintaining a certain vibrating condition of the printing plate portion thereof.

123. A method as claimed in any one of the preceding Claims, characterized in that at least locally in a strip-shaped upper slit portion above said successive semiconductor substrate portions moving therebelow, maintaining a considerable underpressure, possibly even near a vacuum condition.

124. A method as claimed in any one of the preceding Claims, characterized in that a temporary standstill of the successive semiconductor substrate parts moving through it is maintained locally in the tunnel arrangement for the purpose of an exposure process of the an exposure layer of a previous tunnel portion, which is described and indicated in several of the already approved, jl Dutch Patent Applications submitted by the applicant.

125. A method as claimed in any one of the preceding Claims, characterized in that as in the upper tunnel block on either side of such a central strip-shaped semiconductor treatment part medium-lock arrangements are included, thereby preventing the combination of the basic carrier medium and particles of a semiconductor substance to escape transversely from the central semiconductor treatment section via the two strip-shaped slit sections between the successive tape or film sections and the upper portion of the bottom wall of the upper tunnel block.

126. A method as claimed in any one of the preceding Claims, characterized in that, as locally, the use of such a medium supply block is also carried out in the bottom tunnel block, with therein a continuous supply of exclusively liquid medium in a thin-liquid state. thereof, thereby maintaining, in a subsequent portion of this tunnel arrangement, an optimum uniform micrometer height of the applied layer between the sub-tunnel block portion and the subsequent substrate portions moving thereabove for the purpose of thereby functioning this continuous metal band or foil as a temporary semiconductor substrate.

127. A method as claimed in any one of the preceding Claims, characterized in that at least locally in this tunnel arrangement after such a medium supply device in the upper tunnel block with the aid of at least an overpressure of the supplied medium relative to the pressure, typically an underpressure of the medium under these successive band portions. maintaining mechanical contact of these successive band portions with the upper wall of the sub-tunnel block for the purpose of the strip-shaped semiconductor treatment section located above it contributing at least in an optimum uniform layer structure of the particles of a semiconductor substance deposited therein.

128. A method as claimed in Claim 127, characterized in that thereby maintaining a micrometer height of the upper slit section behind this medium supply device and a considerably greater height of the upper slit section for this device, thereby causing a substantial discharge of the medium supplied by the medium feed grooves in the direction of movement of these successive substrate portions and a negligible drain in the opposite direction via the upper slit section behind it to a strip-shaped medium drain section included in this upper tunnel block.

129. A method according to any one of the preceding Claims, characterized in that in this tunnel arrangement also the possible application of several of the methods of the semiconductor facility, installation, arrangements and devices, which on 23 June,

July 6, August 11 last and currently Dutch Patent Applications filed by the applicant regarding such a semiconductor tunnel arrangement.

130. A method according to Claim 129, characterized in that the possible application of all semiconductor treatments for wafers in semiconductor modules or installations, which are already described in Patents, is mentioned in the text. of the following: a) an individual semiconductor wafer or substrate; or b) an individual or non-individual semiconductor processing module or installation.

131. A method as claimed in any one of the preceding Claims, characterized in that the methods described in this Patent Application are also applicable to these other semiconductor tunnel arrangements, which are indicated and described in these other, previously and simultaneously filed Patent applications. of the applicant.